JP4129767B2 - 半導体ウェハの洗浄装置とその洗浄方法、及びマイクロエレクトロニクス用基板の製造方法 - Google Patents
半導体ウェハの洗浄装置とその洗浄方法、及びマイクロエレクトロニクス用基板の製造方法 Download PDFInfo
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Description
また、本発明の方法は、液体が除去されるとき、ウエハの前面および後面に隣接して、実質的に粒子の存在しない環境(例えば、超高純度ガス、超高純度の非反応性ガス等)を形成するステップを有している。この環境形成ステップ中に洗浄促進物質(例えば、微量の極性有機化合物、ヘリウム、界面活性剤、二酸化炭素等)を含むキャリヤガスを導入するステップも、本発明の方法に含まれる。洗浄促進物質は、前面および後面に付着した液体をドーピングして、付着した液体中の洗浄促進物質に濃度勾配を生じさせ、ウェハから離れる付着液体の流体流れを加速する。
また、この洗浄増強物質の濃度勾配は、ウェハに付着する液体の表面張力を低下させることに寄与するものであり、ウェハ表面上の液体メニスカスの現象により、液体界面に生じる力によって界面の親和性を低下させ、ウェハ表面からの液体の分離を促進させる。
また、他の構成によれば、洗浄増強物質は、ガスと混合されて洗浄増強混合物を形成し、この混合物は、更に、実質的に粒子が存在しないガス含有環境に導入されるキャリアガスと組み合わされることから、この洗浄増強物質を希釈した混合物は、洗浄増強物質の僅かな量でマランゴニー効果に基づく洗浄作用を効果的に与えることができる。
さらに、二次的効果として、本発明では、基板が移動しないため洗浄装置には可動部品がなくなり、従来の装置に比較してその使用及びメンテナンスを容易にし、洗浄増強物質の使用量も少なくて有効な洗浄効果を達成できる。
第1図は、本発明による洗浄装置10の一実施例を示すブロック図である。洗浄装置10は、湿式処理装置12、コントローラ14、フィルタバンク16、パージャ(purger)18、インジェクタ20、ヒータ22、溶剤インジェクタ(solvent bubbler)24、補助インジェクタ26、および溶剤供給源28等の要素を有している。また、装置は、複数の流量制御弁30を有している。各流量制御弁は、破線31で示すように、コントローラ14および少なくとも1つの上記要素に接続されている。実線は、装置の各要素間に流体を搬送するのに使用されるラインを示す。すすぎ水供給源32およびドレン34も示されている。
また、フィルタバンクにより、この前後に名目圧力降下が生じる。この圧力降下は1.06kg/cm2(約15lb/in2)以下、好ましくは0.35kg/cm2(約5lb/in2)以下である。補助ポンプまたは流量/圧力増強装置を使用することなく、フィルタバンクを通る高流量が達成される。もちろん、用途によっては、使用箇所に超高純度水を供給できる他のフィルタを使用することもできる。
一実施例では、洗浄技術はプリゲート酸化物洗浄(pre-gate oxide cleans)に使用される。プリゲート酸化物洗浄は、一般に、ゲート酸化物層の形成を感じるため、広くは行なわれていない。すなわち、半導体基板上への粒子の導入により、従来のプリゲート酸化物洗浄は行なわれていない。しかしながら、本発明の技術は、ゲート酸化物層の形成前に基板表面上に残留することがあるあらゆる粒子を実際に除去し、これによりゲート酸化物層の全体的品位を向上させる。本発明の技術は、約0.5 ミクロン(好ましくは0.2 ミクロン、一層好ましくは0.1 ミクロン)より大きい実質的に全ての粒子を除去する。
本発明の方法および装置の原理を証明しかつ作動を説明するため、次の実験を行なった。
即ち、液面が下がるにつれて、ウェハ表面上のガスと液体の境界面において、洗浄増強物質を含むガス含有環境が容器内全体にかつ所定時間にわたって広がり、順次露出し始めるウェハ表面と既に露出したウェハ表面全体に対して洗浄増強物質が容器内に充満する状態となることによって、ウェハ表面に付着する液体に洗浄増強物質の濃度勾配が生じ、付着液体がウェハから離れる流体流れを加速させることから、ウェハの洗浄効果をより向上させることができる。
12:湿式処理装置
14:コントローラ
16:フィルタバンク
18:パージャ
20:インジェクタ
22:ヒータ
24:パージヤ
26:補助インジェクタ
28:溶剤供給源
30:流量制御弁
32:すすぎ水
34:すすぎ水供給源
Claims (4)
- マイクロ・エレクトロニクス用基板を製造するための方法であって、
面を有する前記マイクロ・エレクトロニクス用基板の表面の少なくとも一部を取り除くためのエッチング剤を含む液体の中に前記マイクロ・エレクトロニクス基板を置いてエッチングするステップと、
前記エッチングステップが実施された後、次の中間ステップとして、ガス含有環境内のガス成分から前記基板表面上に更なる物質が形成される前であって、前記マイクロ・エレクトロニクス用基板が前記エッチング剤の液体から取り除かれた後、水からなる液体に前記マイクロ・エレクトロニクス用基板を浸漬するステップと、
前記マイクロ・エレクトロニクス用基板を浸漬している液体が、前記マイクロ・エレクトロニクス用基板から分離されるときに、前記基板の表面に隣接する部分が、実質的に粒子が存在しないガス含有環境となるように形成するステップと、
該ガス含有環境の形成ステップ中に、洗浄増強物質を前記粒子が存在しないガス含有環境内に導入して、ガスと液体の境界面が前記面を横切って移動するステップとからなり、
前記洗浄増強物質が、前記環境形成ステップ中に、前記マイクロ・エレクトロニクス用基板から分離される液体にドーピングし、かつ前記マイクロ・エレクトロニクス用基板の前記面に前記液体が付着し、この付着した液体に濃度勾配を生じさせ、前記マイクロ・エレクトロニクス用基板から離れる付着液体の流体流れを加速させることを特徴とするマイクロ・エレクトロニクス用基板の製造方法。 - 前記環境形成ステップ中は、分離されている液体が水を包含することを特徴とする請求の範囲第1項に記載の方法。
- 前記マイクロ・エレクトロニクス用基板は、前記エッチング剤を含む液体から前記マイクロ・エレクトロニクス用基板を取り出して、5秒以下の間、水からなる液体内に浸漬されることを特徴とする請求の範囲第1項に記載の方法。
- マイクロ・エレクトロニクス用基板を製造するための方法であって、
面を有する前記マイクロ・エレクトロニクス用基板の表面の少なくとも一部を取り除くためのエッチング剤を含む液体の中に前記マイクロ・エレクトロニクス基板を置いてエッチングするステップと、
前記エッチングステップが実施された後、次の中間ステップとして、前記マイクロ・エレクトロニクス用基板を前記エッチング剤から取り除いた後、不活性ガスがガス含有環境内に供給され、かつ前記ガス含有環境から前記基板表面上に更なる物質が形成されないように、水からなる液体内に前記マクロ・エレクトロニクス用基板を浸漬するステップと、
前記マイクロ・エレクトロニクス用基板を浸漬している液体が、前記マイクロ・エレクトロニクス用基板から分離されるときに、前記基板の表面に隣接する部分が、実質的に粒子が存在しないガス含有環境となるように形成するステップと、
該ガス含有環境の形成ステップ中に、洗浄増強物質を前記粒子が存在しないガス含有環境内に導入して、ガスと液体の境界面が前記面を横切って移動するステップとからなり、
前記洗浄増強物質が、前記環境形成ステップ中に、前記マイクロ・エレクトロニクス用基板から分離される液体にドーピングし、かつ前記マイクロ・エレクトロニクス用基板の前記面に前記液体が付着し、この付着した液体に濃度勾配を生じさせ、前記マイクロ・エレクトロニクス用基板から離れる付着液体の流体流れを加速させることを特徴とするマイクロ・エレクトロニクス用基板の製造方法。
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JP2003326406A Expired - Fee Related JP4129767B2 (ja) | 1994-11-14 | 2003-09-18 | 半導体ウェハの洗浄装置とその洗浄方法、及びマイクロエレクトロニクス用基板の製造方法 |
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EP (1) | EP0800424B1 (ja) |
JP (2) | JP3502947B2 (ja) |
KR (1) | KR100397455B1 (ja) |
AU (1) | AU4159496A (ja) |
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1995
- 1995-11-08 US US08/555,634 patent/US5772784A/en not_active Expired - Lifetime
- 1995-11-13 WO PCT/US1995/014832 patent/WO1996014944A1/en active IP Right Grant
- 1995-11-13 AU AU41594/96A patent/AU4159496A/en not_active Abandoned
- 1995-11-13 EP EP95939961A patent/EP0800424B1/en not_active Expired - Lifetime
- 1995-11-13 DE DE69530118T patent/DE69530118T2/de not_active Expired - Fee Related
- 1995-11-13 JP JP51630096A patent/JP3502947B2/ja not_active Expired - Fee Related
- 1995-11-13 KR KR1019970703216A patent/KR100397455B1/ko not_active IP Right Cessation
-
1997
- 1997-05-22 US US08/862,083 patent/US5878760A/en not_active Expired - Lifetime
- 1997-05-22 US US08/862,082 patent/US5868150A/en not_active Expired - Fee Related
- 1997-08-06 US US08/907,322 patent/US5873947A/en not_active Expired - Fee Related
- 1997-12-29 US US08/861,456 patent/US5891256A/en not_active Expired - Fee Related
-
1998
- 1998-01-12 US US09/005,976 patent/US5932027A/en not_active Expired - Lifetime
- 1998-09-21 US US09/157,765 patent/US6352082B1/en not_active Expired - Fee Related
-
2001
- 2001-12-11 US US10/014,113 patent/US6491043B2/en not_active Expired - Fee Related
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- 2003-09-18 JP JP2003326406A patent/JP4129767B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR970706916A (ko) | 1997-12-01 |
AU4159496A (en) | 1996-06-06 |
JP2004048052A (ja) | 2004-02-12 |
US5891256A (en) | 1999-04-06 |
US20020043272A1 (en) | 2002-04-18 |
US6491043B2 (en) | 2002-12-10 |
DE69530118T2 (de) | 2004-05-27 |
US5772784A (en) | 1998-06-30 |
US5878760A (en) | 1999-03-09 |
JP3502947B2 (ja) | 2004-03-02 |
US5932027A (en) | 1999-08-03 |
DE69530118D1 (de) | 2003-04-30 |
EP0800424A1 (en) | 1997-10-15 |
JPH10508986A (ja) | 1998-09-02 |
KR100397455B1 (ko) | 2003-11-17 |
US6352082B1 (en) | 2002-03-05 |
EP0800424B1 (en) | 2003-03-26 |
WO1996014944A1 (en) | 1996-05-23 |
US5873947A (en) | 1999-02-23 |
US5868150A (en) | 1999-02-09 |
EP0800424A4 (en) | 1998-09-09 |
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