JP4113637B2 - 音響共振器とその製作方法 - Google Patents

音響共振器とその製作方法 Download PDF

Info

Publication number
JP4113637B2
JP4113637B2 JP15495699A JP15495699A JP4113637B2 JP 4113637 B2 JP4113637 B2 JP 4113637B2 JP 15495699 A JP15495699 A JP 15495699A JP 15495699 A JP15495699 A JP 15495699A JP 4113637 B2 JP4113637 B2 JP 4113637B2
Authority
JP
Japan
Prior art keywords
layer
electrode
twenty
depression
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP15495699A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000069594A5 (enExample
JP2000069594A (ja
Inventor
リチャード・シー・ルービー
デサイ ヨゲシュ
ドナルド・アール・ブラドベリー
Original Assignee
アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド filed Critical アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド
Publication of JP2000069594A publication Critical patent/JP2000069594A/ja
Publication of JP2000069594A5 publication Critical patent/JP2000069594A5/ja
Application granted granted Critical
Publication of JP4113637B2 publication Critical patent/JP4113637B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
    • H03H9/585—Stacked Crystal Filters [SCF]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP15495699A 1998-06-02 1999-06-02 音響共振器とその製作方法 Expired - Lifetime JP4113637B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US088,964 1987-08-21
US09/088,964 US6060818A (en) 1998-06-02 1998-06-02 SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters

Publications (3)

Publication Number Publication Date
JP2000069594A JP2000069594A (ja) 2000-03-03
JP2000069594A5 JP2000069594A5 (enExample) 2006-07-20
JP4113637B2 true JP4113637B2 (ja) 2008-07-09

Family

ID=22214543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15495699A Expired - Lifetime JP4113637B2 (ja) 1998-06-02 1999-06-02 音響共振器とその製作方法

Country Status (4)

Country Link
US (1) US6060818A (enExample)
EP (1) EP0963040B1 (enExample)
JP (1) JP4113637B2 (enExample)
DE (1) DE69933907T2 (enExample)

Families Citing this family (224)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6339276B1 (en) * 1999-11-01 2002-01-15 Agere Systems Guardian Corp. Incremental tuning process for electrical resonators based on mechanical motion
US6746577B1 (en) 1999-12-16 2004-06-08 Agere Systems, Inc. Method and apparatus for thickness control and reproducibility of dielectric film deposition
US6524971B1 (en) 1999-12-17 2003-02-25 Agere Systems, Inc. Method of deposition of films
US6377136B1 (en) 2000-02-04 2002-04-23 Agere Systems Guardian Corporation Thin film resonator filter having at least one component with different resonant frequency sets or electrode capacitance
US7296329B1 (en) 2000-02-04 2007-11-20 Agere Systems Inc. Method of isolation for acoustic resonator device
US6306313B1 (en) 2000-02-04 2001-10-23 Agere Systems Guardian Corp. Selective etching of thin films
US6437667B1 (en) 2000-02-04 2002-08-20 Agere Systems Guardian Corp. Method of tuning thin film resonator filters by removing or adding piezoelectric material
US6323744B1 (en) 2000-02-04 2001-11-27 Agere Systems Guardian Corp. Grounding of TFR ladder filters
US6342134B1 (en) * 2000-02-11 2002-01-29 Agere Systems Guardian Corp. Method for producing piezoelectric films with rotating magnetron sputtering system
US6329305B1 (en) * 2000-02-11 2001-12-11 Agere Systems Guardian Corp. Method for producing devices having piezoelectric films
DE10007577C1 (de) * 2000-02-18 2001-09-13 Infineon Technologies Ag Piezoresonator
US6448793B1 (en) 2000-04-07 2002-09-10 Rf Micro Devices, Inc. Adaptive manufacturing of semiconductor circuits
US6439693B1 (en) * 2000-05-04 2002-08-27 Silverbrook Research Pty Ltd. Thermal bend actuator
US6384697B1 (en) * 2000-05-08 2002-05-07 Agilent Technologies, Inc. Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator
US6603241B1 (en) 2000-05-23 2003-08-05 Agere Systems, Inc. Acoustic mirror materials for acoustic devices
GB0012439D0 (en) * 2000-05-24 2000-07-12 Univ Cranfield Improvements to filters
DE10035421A1 (de) * 2000-07-20 2002-02-07 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer Schichtenfolge zum ineinander Umwandeln von akustischen oder thermischen Signalen und elektrischen Spannungsänderungen
DE10035423C1 (de) * 2000-07-20 2001-11-22 Infineon Technologies Ag Halbleiterbauelement mit einer Schichtenfolge zum ineinander Umwandeln von akustischen oder thermischen Signalen und elektrischen Spannungsänderungen und Verfahren zu dessen Herstellung
US6355498B1 (en) 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
US6420820B1 (en) 2000-08-31 2002-07-16 Agilent Technologies, Inc. Acoustic wave resonator and method of operating the same to maintain resonance when subjected to temperature variations
US6377137B1 (en) 2000-09-11 2002-04-23 Agilent Technologies, Inc. Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness
US6486751B1 (en) 2000-09-26 2002-11-26 Agere Systems Inc. Increased bandwidth thin film resonator having a columnar structure
US6674291B1 (en) 2000-10-30 2004-01-06 Agere Systems Guardian Corp. Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom
US6587212B1 (en) 2000-10-31 2003-07-01 Agere Systems Inc. Method and apparatus for studying vibrational modes of an electro-acoustic device
US6515558B1 (en) 2000-11-06 2003-02-04 Nokia Mobile Phones Ltd Thin-film bulk acoustic resonator with enhanced power handling capacity
US6743731B1 (en) 2000-11-17 2004-06-01 Agere Systems Inc. Method for making a radio frequency component and component produced thereby
US6424237B1 (en) 2000-12-21 2002-07-23 Agilent Technologies, Inc. Bulk acoustic resonator perimeter reflection system
US6496085B2 (en) 2001-01-02 2002-12-17 Nokia Mobile Phones Ltd Solidly mounted multi-resonator bulk acoustic wave filter with a patterned acoustic mirror
US6407649B1 (en) 2001-01-05 2002-06-18 Nokia Corporation Monolithic FBAR duplexer and method of making the same
US6518860B2 (en) 2001-01-05 2003-02-11 Nokia Mobile Phones Ltd BAW filters having different center frequencies on a single substrate and a method for providing same
US6509813B2 (en) 2001-01-16 2003-01-21 Nokia Mobile Phones Ltd. Bulk acoustic wave resonator with a conductive mirror
US6521100B2 (en) 2001-02-02 2003-02-18 Nokia Mobile Phones Ltd Method of producing a piezoelectric thin film and bulk acoustic wave resonator fabricated according to the method
US7435613B2 (en) * 2001-02-12 2008-10-14 Agere Systems Inc. Methods of fabricating a membrane with improved mechanical integrity
US6714102B2 (en) * 2001-03-01 2004-03-30 Agilent Technologies, Inc. Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method
US6617249B2 (en) 2001-03-05 2003-09-09 Agilent Technologies, Inc. Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method
US6874211B2 (en) * 2001-03-05 2005-04-05 Agilent Technologies, Inc. Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method
US6566979B2 (en) * 2001-03-05 2003-05-20 Agilent Technologies, Inc. Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method
US6483229B2 (en) 2001-03-05 2002-11-19 Agilent Technologies, Inc. Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method
US6469597B2 (en) * 2001-03-05 2002-10-22 Agilent Technologies, Inc. Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method
US6787048B2 (en) * 2001-03-05 2004-09-07 Agilent Technologies, Inc. Method for producing thin bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method
US6668618B2 (en) 2001-04-23 2003-12-30 Agilent Technologies, Inc. Systems and methods of monitoring thin film deposition
US7464547B2 (en) * 2001-05-02 2008-12-16 Silverbrook Research Pty Ltd Thermal actuators
JP2005236337A (ja) * 2001-05-11 2005-09-02 Ube Ind Ltd 薄膜音響共振器及びその製造方法
JP3903842B2 (ja) 2001-07-03 2007-04-11 株式会社村田製作所 圧電共振子、フィルタおよび電子通信機器
US6710681B2 (en) 2001-07-13 2004-03-23 Agilent Technologies, Inc. Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same
JP3939939B2 (ja) * 2001-07-17 2007-07-04 富士通株式会社 圧電薄膜共振素子の製造方法
JP3944372B2 (ja) * 2001-09-21 2007-07-11 株式会社東芝 圧電薄膜振動子及びこれを用いた周波数可変共振器
JP3954395B2 (ja) 2001-10-26 2007-08-08 富士通株式会社 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法
TW520341B (en) * 2001-11-20 2003-02-11 Ind Tech Res Inst A method for manufacturing a chamber of the thin film bulk acoustic wave resonator (FBAR)
US6710508B2 (en) * 2001-11-27 2004-03-23 Agilent Technologies, Inc. Method for adjusting and stabilizing the frequency of an acoustic resonator
JP2004221622A (ja) * 2002-01-08 2004-08-05 Murata Mfg Co Ltd 圧電共振子、圧電フィルタ、デュプレクサ、通信装置および圧電共振子の製造方法
JP2004048639A (ja) * 2002-05-17 2004-02-12 Murata Mfg Co Ltd 圧電共振子及びその製造方法等
US6906451B2 (en) 2002-01-08 2005-06-14 Murata Manufacturing Co., Ltd. Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator
US20100107389A1 (en) 2002-01-11 2010-05-06 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method of fabricating an electrode for a bulk acoustic resonator
KR20020029882A (ko) * 2002-03-02 2002-04-20 주식회사 에이엔티 엘시엠피 공정법에 의한 탄성파소자의 제작방법
US7276994B2 (en) 2002-05-23 2007-10-02 Murata Manufacturing Co., Ltd. Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter
JP2004072715A (ja) 2002-06-11 2004-03-04 Murata Mfg Co Ltd 圧電薄膜共振子、圧電フィルタ、およびそれを有する電子部品
JP3940932B2 (ja) 2002-06-20 2007-07-04 宇部興産株式会社 薄膜圧電共振器、薄膜圧電デバイスおよびその製造方法
US7101721B2 (en) * 2002-07-22 2006-09-05 Rf Micro Devices, Inc. Adaptive manufacturing for film bulk acoustic wave resonators
US20040021529A1 (en) * 2002-07-30 2004-02-05 Bradley Paul D. Resonator with protective layer
US6828713B2 (en) * 2002-07-30 2004-12-07 Agilent Technologies, Inc Resonator with seed layer
US6894360B2 (en) * 2002-07-30 2005-05-17 Agilent Technologies, Inc. Electrostatic discharge protection of thin-film resonators
US6909221B2 (en) * 2002-08-01 2005-06-21 Georgia Tech Research Corporation Piezoelectric on semiconductor-on-insulator microelectromechanical resonators
US7312674B2 (en) * 2002-08-06 2007-12-25 The Charles Stark Draper Laboratory, Inc. Resonator system with a plurality of individual mechanically coupled resonators and method of making same
US7005946B2 (en) * 2002-08-06 2006-02-28 The Charles Stark Draper Laboratory, Inc. MEMS piezoelectric longitudinal mode resonator
US7023065B2 (en) * 2002-08-07 2006-04-04 Georgia Tech Research Corporation Capacitive resonators and methods of fabrication
GB2406582A (en) * 2002-08-13 2005-04-06 Trikon Technologies Ltd Acoustic resonators
JP2004158970A (ja) 2002-11-05 2004-06-03 Ube Ind Ltd 薄膜圧電共振器を用いた帯域フィルタ
JP2004222244A (ja) * 2002-12-27 2004-08-05 Toshiba Corp 薄膜圧電共振器およびその製造方法
DE10301261B4 (de) * 2003-01-15 2018-03-22 Snaptrack, Inc. Mit akustischen Volumenwellen arbeitendes Bauelement und Verfahren zur Herstellung
US7275292B2 (en) * 2003-03-07 2007-10-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method for fabricating an acoustical resonator on a substrate
KR100599083B1 (ko) * 2003-04-22 2006-07-12 삼성전자주식회사 캔틸레버 형태의 압전 박막 공진 소자 및 그 제조방법
JP2005033379A (ja) * 2003-07-09 2005-02-03 Tdk Corp 薄膜バルク波振動子およびその製造方法
JP2005073175A (ja) * 2003-08-27 2005-03-17 Fujitsu Media Device Kk 圧電薄膜共振子及びその製造方法
KR100555762B1 (ko) * 2003-10-07 2006-03-03 삼성전자주식회사 에어갭형 박막 벌크 음향 공진기 및 그 제조방법, 이를이용한 필터 및 듀플렉서
US6946928B2 (en) * 2003-10-30 2005-09-20 Agilent Technologies, Inc. Thin-film acoustically-coupled transformer
US7391285B2 (en) * 2003-10-30 2008-06-24 Avago Technologies Wireless Ip Pte Ltd Film acoustically-coupled transformer
EP1528677B1 (en) 2003-10-30 2006-05-10 Agilent Technologies, Inc. Film acoustically-coupled transformer with two reverse c-axis piezoelectric elements
US7019605B2 (en) * 2003-10-30 2006-03-28 Larson Iii John D Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth
US7358831B2 (en) * 2003-10-30 2008-04-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with simplified packaging
KR100645640B1 (ko) * 2003-11-03 2006-11-15 삼성전기주식회사 회절형 박막 압전 마이크로 미러 및 그 제조 방법
JP4534158B2 (ja) 2003-12-19 2010-09-01 宇部興産株式会社 圧電薄膜デバイスの製造方法
JP3944161B2 (ja) * 2003-12-25 2007-07-11 株式会社東芝 薄膜バルク波音響共振器及び薄膜バルク波音響共振器の製造方法
US20050148065A1 (en) * 2003-12-30 2005-07-07 Intel Corporation Biosensor utilizing a resonator having a functionalized surface
US7323805B2 (en) * 2004-01-28 2008-01-29 Kabushiki Kaisha Toshiba Piezoelectric thin film device and method for manufacturing the same
US20050181572A1 (en) * 2004-02-13 2005-08-18 Verhoeven Tracy B. Method for acoustically isolating an acoustic resonator from a substrate
US7038559B2 (en) 2004-02-23 2006-05-02 Ruby Richard C Vertically separated acoustic filters and resonators
JP4413061B2 (ja) * 2004-04-09 2010-02-10 株式会社村上開明堂 ディスプレイ保持装置
JP4373949B2 (ja) 2004-04-20 2009-11-25 株式会社東芝 薄膜圧電共振器及びその製造方法
JP4149416B2 (ja) 2004-05-31 2008-09-10 富士通メディアデバイス株式会社 圧電薄膜共振子およびフィルタならびにそれらの製造方法
US7161448B2 (en) * 2004-06-14 2007-01-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancements using recessed region
US7114252B2 (en) * 2004-06-17 2006-10-03 Toko, Inc. Large scale simultaneous circuit encapsulating apparatus
JP2006019935A (ja) 2004-06-30 2006-01-19 Toshiba Corp 薄膜圧電共振器及びその製造方法
US7615833B2 (en) 2004-07-13 2009-11-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator package and method of fabricating same
US20060017352A1 (en) * 2004-07-20 2006-01-26 Aram Tanielian Thin device and method of fabrication
US20060059269A1 (en) * 2004-09-13 2006-03-16 Chien Chen Transparent recovery of switch device
US7388454B2 (en) 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
DE102004049498A1 (de) * 2004-10-11 2006-04-13 Epcos Ag Mit akustischen Wellen arbeitendes Bauelement und Verfahren zu dessen Herstellung
US7098758B2 (en) * 2004-11-03 2006-08-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustically coupled thin-film resonators having an electrode with a tapered edge
KR100750736B1 (ko) * 2004-11-10 2007-08-22 삼성전자주식회사 하나의 트리밍 인덕터를 사용하는 필터
US8981876B2 (en) * 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7202560B2 (en) * 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US20060125084A1 (en) * 2004-12-15 2006-06-15 Fazzio Ronald S Integration of micro-electro mechanical systems and active circuitry
US7791434B2 (en) 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
WO2006067949A1 (ja) * 2004-12-24 2006-06-29 Murata Manufacturing Co., Ltd. 圧電薄膜共振子およびその製造方法
JP2006180304A (ja) 2004-12-24 2006-07-06 Hitachi Media Electoronics Co Ltd 圧電バルク共振子およびその製造方法、圧電バルク共振子を用いたフィルタ、それを用いた半導体集積回路装置、並びにそれを用いた高周波モジュール
JP4149444B2 (ja) 2005-01-12 2008-09-10 富士通メディアデバイス株式会社 圧電薄膜共振子及びこれを用いたフィルタ
JP2006207396A (ja) * 2005-01-25 2006-08-10 Honda Motor Co Ltd ランキンサイクル装置
US7427819B2 (en) * 2005-03-04 2008-09-23 Avago Wireless Ip Pte Ltd Film-bulk acoustic wave resonator with motion plate and method
US7248131B2 (en) * 2005-03-14 2007-07-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Monolithic vertical integration of an acoustic resonator and electronic circuitry
US7369013B2 (en) * 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
US7358651B2 (en) * 2005-04-18 2008-04-15 Avago Technologies Wireless (Singapore) Pte. Ltd. Apparatus and method for detecting a target environmental variable that employs film-bulk acoustic wave resonator oscillators
US7436269B2 (en) * 2005-04-18 2008-10-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustically coupled resonators and method of making the same
JP4550658B2 (ja) 2005-04-28 2010-09-22 富士通メディアデバイス株式会社 圧電薄膜共振器およびフィルタ
JP2006339873A (ja) * 2005-05-31 2006-12-14 Toshiba Corp 薄膜圧電共振器、フィルタ及び電圧制御発振器
DE102005027715B4 (de) 2005-06-15 2020-01-02 Snaptrack, Inc. Elektroakustischer Resonator, Filter, Duplexer und Verfahren zur Bestimmung von Parametern eines Resonators
US7701117B2 (en) * 2005-06-30 2010-04-20 Panasonic Corporation Acoustic resonator and filter
JP2007036829A (ja) 2005-07-28 2007-02-08 Toshiba Corp 薄膜圧電共振器、フィルタ及び薄膜圧電共振器の製造方法
JP4435049B2 (ja) 2005-08-08 2010-03-17 株式会社東芝 薄膜圧電共振器及びその製造方法
WO2007026637A1 (ja) * 2005-08-30 2007-03-08 Matsushita Electric Industrial Co., Ltd. 圧電共振器及び圧電共振器の製造方法
US7868522B2 (en) 2005-09-09 2011-01-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Adjusted frequency temperature coefficient resonator
US7391286B2 (en) * 2005-10-06 2008-06-24 Avago Wireless Ip Pte Ltd Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters
US7675390B2 (en) * 2005-10-18 2010-03-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator
US7525398B2 (en) * 2005-10-18 2009-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically communicating data signals across an electrical isolation barrier
US7425787B2 (en) 2005-10-18 2008-09-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator
US7737807B2 (en) 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
US7423503B2 (en) * 2005-10-18 2008-09-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating film acoustically-coupled transformer
JP4707533B2 (ja) 2005-10-27 2011-06-22 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
US7463499B2 (en) * 2005-10-31 2008-12-09 Avago Technologies General Ip (Singapore) Pte Ltd. AC-DC power converter
US7561009B2 (en) * 2005-11-30 2009-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with temperature compensation
US7528681B2 (en) * 2005-12-20 2009-05-05 Palo Alto Research Center Incorporated Acoustic devices using an AlGaN piezoelectric region
US7612636B2 (en) * 2006-01-30 2009-11-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Impedance transforming bulk acoustic wave baluns
JP4315174B2 (ja) * 2006-02-16 2009-08-19 セイコーエプソン株式会社 ラム波型高周波デバイスの製造方法
JP2007221588A (ja) * 2006-02-17 2007-08-30 Toshiba Corp 薄膜圧電共振器及び薄膜圧電共振器の製造方法
US7746677B2 (en) 2006-03-09 2010-06-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US7479685B2 (en) 2006-03-10 2009-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Electronic device on substrate with cavity and mitigated parasitic leakage path
US7578189B1 (en) 2006-05-10 2009-08-25 Qualtre, Inc. Three-axis accelerometers
US7629865B2 (en) 2006-05-31 2009-12-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters
JP2007325013A (ja) * 2006-06-01 2007-12-13 Alps Electric Co Ltd 表面弾性波装置の製造方法及び表面弾性波装置
KR100719123B1 (ko) 2006-07-27 2007-05-18 삼성전자주식회사 멀피 밴드 필터모듈 및 그 제조방법
EP2051377A4 (en) * 2006-08-03 2012-03-28 Panasonic Corp FREQUENCY-VARIABLE ACOUSTIC FILM RESONATOR, FILTER AND COMMUNICATION DEVICE THEREWITH
US7508286B2 (en) * 2006-09-28 2009-03-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. HBAR oscillator and method of manufacture
US20080202239A1 (en) * 2007-02-28 2008-08-28 Fazzio R Shane Piezoelectric acceleration sensor
US7698941B2 (en) * 2007-06-20 2010-04-20 Headway Technologies, Inc. Sensing unit and method of making same
US20090053401A1 (en) * 2007-08-24 2009-02-26 Maxim Integrated Products, Inc. Piezoelectric deposition for BAW resonators
US7791435B2 (en) 2007-09-28 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single stack coupled resonators having differential output
US8512800B2 (en) 2007-12-04 2013-08-20 Triquint Semiconductor, Inc. Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters
JP4730383B2 (ja) * 2008-01-21 2011-07-20 宇部興産株式会社 薄膜音響共振器及びその製造方法
JP5191762B2 (ja) * 2008-03-06 2013-05-08 太陽誘電株式会社 圧電薄膜共振器、フィルタ、および通信装置
US8278802B1 (en) 2008-04-24 2012-10-02 Rf Micro Devices, Inc. Planarized sacrificial layer for MEMS fabrication
US7732977B2 (en) 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
US7855618B2 (en) 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
US7768364B2 (en) * 2008-06-09 2010-08-03 Maxim Integrated Products, Inc. Bulk acoustic resonators with multi-layer electrodes
JP5226409B2 (ja) 2008-07-17 2013-07-03 太陽誘電株式会社 共振デバイス、通信モジュール、通信装置、共振デバイスの製造方法
JP5220503B2 (ja) * 2008-07-23 2013-06-26 太陽誘電株式会社 弾性波デバイス
US8042255B1 (en) * 2008-09-30 2011-10-25 The United States Of America As Represented By The Secretary Of The Navy Rapid fabrication techniques for arbitrary shape piezoelectric transducer sensors
US8291559B2 (en) * 2009-02-24 2012-10-23 Epcos Ag Process for adapting resonance frequency of a BAW resonator
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
WO2011026100A1 (en) 2009-08-31 2011-03-03 Georgia Tech Research Corporation Bulk acoustic wave gyroscope with spoked structure
US8692631B2 (en) * 2009-10-12 2014-04-08 Hao Zhang Bulk acoustic wave resonator and method of fabricating same
US9847768B2 (en) * 2009-11-23 2017-12-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Polarity determining seed layer and method of fabricating piezoelectric materials with specific C-axis
US8193877B2 (en) 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
US9243316B2 (en) * 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US9679765B2 (en) 2010-01-22 2017-06-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US8673121B2 (en) 2010-01-22 2014-03-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric materials with opposite C-axis orientations
US8384269B2 (en) 2010-10-20 2013-02-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Electrostatic bonding of a die substrate to a package substrate
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9154111B2 (en) 2011-05-20 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Double bulk acoustic resonator comprising aluminum scandium nitride
US9917567B2 (en) 2011-05-20 2018-03-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising aluminum scandium nitride
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8330325B1 (en) 2011-06-16 2012-12-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer
DE102012214323B4 (de) 2011-08-12 2023-12-28 Avago Technologies International Sales Pte. Limited Gestapelter Bulk-Akustikresonator, der eine Brücke und einen akustischen Reflektor entlang eines Umfangs des Resonators aufweist
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
US8797123B2 (en) * 2011-09-14 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient
US9525399B2 (en) 2011-10-31 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Planarized electrode for improved performance in bulk acoustic resonators
US9667218B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising feedback circuit
US9667220B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising heater and sense resistors
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
US9154103B2 (en) 2012-01-30 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
US10658998B2 (en) 2013-07-31 2020-05-19 Oepic Semiconductors, Inc. Piezoelectric film transfer for acoustic resonators and filters
JP6254799B2 (ja) * 2013-09-17 2017-12-27 日本電波工業株式会社 圧電デバイスの製造方法
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
DE102015107569A1 (de) 2014-05-15 2015-11-19 Avago Technologies General Ip Pte. Ltd. Verfahren zur Herstellung von mit Seltenerdelement dotiertem piezoelektrischen Material mit verschiedenen Mengen an Dotiermittel und einer ausgewählten C-Achsen Orientierung
CN107003302B (zh) * 2014-09-15 2021-11-05 Qorvo美国公司 通过氧化还原耦合的质量检测
US9991870B2 (en) 2015-08-25 2018-06-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface acoustic wave (SAW) resonator
US10020796B2 (en) 2015-08-25 2018-07-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface acoustic wave (SAW) resonator
US10177734B2 (en) 2015-08-25 2019-01-08 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
US10469056B2 (en) 2015-08-25 2019-11-05 Avago Technologies International Sales Pte. Limited Acoustic filters integrated into single die
US10090822B2 (en) 2015-08-25 2018-10-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface acoustic wave (SAW) resonator
US10523178B2 (en) 2015-08-25 2019-12-31 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
US10536133B2 (en) 2016-04-22 2020-01-14 Avago Technologies International Sales Pte. Limited Composite surface acoustic wave (SAW) device with absorbing layer for suppression of spurious responses
US10812038B2 (en) 2015-08-25 2020-10-20 Avago Technologies International Sales Pte. Limited Acoustic wave resonator
CN105181764B (zh) * 2015-09-25 2018-04-06 上海集成电路研发中心有限公司 一种湿度传感器及制造方法
KR102642898B1 (ko) * 2016-02-18 2024-03-04 삼성전기주식회사 음향 공진기 모듈 및 그 제조 방법
US10177735B2 (en) 2016-02-29 2019-01-08 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
WO2018004666A1 (en) * 2016-07-01 2018-01-04 Intel Corporation Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline iii-n semiconductor transistor devices
US10601391B2 (en) 2016-11-15 2020-03-24 Global Communication Semiconductors, Llc. Film bulk acoustic resonator with spurious resonance suppression
US11736088B2 (en) 2016-11-15 2023-08-22 Global Communication Semiconductors, Llc Film bulk acoustic resonator with spurious resonance suppression
TWI611604B (zh) * 2017-01-03 2018-01-11 穩懋半導體股份有限公司 體聲波濾波器及調諧體聲波濾波器之體聲波共振器之方法
JP6545772B2 (ja) * 2017-01-03 2019-07-17 ウィン セミコンダクターズ コーポレーション 質量調整構造付きバルク音響波共振装置の製造方法
US10439580B2 (en) * 2017-03-24 2019-10-08 Zhuhai Crystal Resonance Technologies Co., Ltd. Method for fabricating RF resonators and filters
US10700660B2 (en) 2017-10-25 2020-06-30 Avago Technologies International Sales Pte. Limited Bulk acoustic wave resonator
US11018651B2 (en) 2018-04-19 2021-05-25 Avago Technologies International Sales Pte. Limited Bulk acoustic wave resonators having doped piezoelectric material and an adhesion and diffusion barrier layer
US11152909B2 (en) 2018-04-19 2021-10-19 Avago Technologies International Sales Pte. Limited Bulk acoustic wave resonators having low atomic weight metal electrodes
US11764750B2 (en) 2018-07-20 2023-09-19 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
US12155368B2 (en) 2018-07-20 2024-11-26 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
US11817839B2 (en) 2019-03-28 2023-11-14 Global Communication Semiconductors, Llc Single-crystal bulk acoustic wave resonator and method of making thereof
KR102712626B1 (ko) * 2019-06-14 2024-10-02 삼성전기주식회사 체적 음향 공진기
US11979134B2 (en) 2019-10-15 2024-05-07 Global Communication Semiconductors, Llc Composite piezoelectric film and bulk acoustic resonator incorporating same
CN113054093B (zh) * 2021-03-04 2024-01-30 苏州汉天下电子有限公司 填充层和包括其的谐振器以及制造方法
US12329035B2 (en) 2021-06-29 2025-06-10 Global Communication Semiconductors, Llc Bulk acoustic wave resonator with improved structures
CN114421909B (zh) * 2021-12-07 2025-08-15 浙江大学杭州国际科创中心 优化fbar空腔平坦化缺陷的方法及空腔型fbar和应用
US12334906B2 (en) 2021-12-30 2025-06-17 Raytheon Company Multi-layer resonator assembly and method for fabricating same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06350371A (ja) * 1993-06-10 1994-12-22 Matsushita Electric Ind Co Ltd 圧電デバイスの製造方法
US5587620A (en) * 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
JP3371050B2 (ja) * 1995-10-27 2003-01-27 三菱電機株式会社 薄膜圧電素子
JP2002509644A (ja) * 1996-10-17 2002-03-26 ノキア モービル フォーンズ リミティド ガラス基板上に薄膜バルク音波共振器（ｆｂａｒ）を作る方法

Also Published As

Publication number Publication date
US6060818A (en) 2000-05-09
DE69933907D1 (de) 2006-12-21
DE69933907T2 (de) 2007-05-31
JP2000069594A (ja) 2000-03-03
EP0963040A2 (en) 1999-12-08
EP0963040B1 (en) 2006-11-08
EP0963040A3 (en) 2000-04-05

Similar Documents

Publication Publication Date Title
JP4113637B2 (ja) 音響共振器とその製作方法
JP4345049B2 (ja) 薄膜音響共振器及びその製造方法
JP3965026B2 (ja) 基板実装型バルク波音響共鳴器の空洞全体にまたがる下部電極
US7275292B2 (en) Method for fabricating an acoustical resonator on a substrate
US6496085B2 (en) Solidly mounted multi-resonator bulk acoustic wave filter with a patterned acoustic mirror
US9197185B2 (en) Resonator device including electrodes with buried temperature compensating layers
JP5000820B2 (ja) 音響共振器及びその製造方法
JP4441843B2 (ja) 薄膜音響共振器
JP2007028669A (ja) 薄膜音響共振器の製造方法
US9608589B2 (en) Method of forming acoustic resonator using intervening seed layer
EP1701440A1 (en) Method for manufacturing piezoelectric thin-film device and piezoelectric thin-film device
CN112803910A (zh) 一种单晶薄膜体声波谐振器的制备方法
JP2003505906A (ja) 共振子構造およびその共振子構造を備えるフィルタ
JP4730383B2 (ja) 薄膜音響共振器及びその製造方法
JP2005303573A (ja) 薄膜圧電共振器及びその製造方法
CN119519640A (zh) 一种基于新型牺牲层工艺的baw器件制备方法
JP3918464B2 (ja) 薄膜音響共振器及びその製造方法
CN112929003A (zh) 一种采用金属键合工艺制备薄膜体声波谐振器的方法

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20060413

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060602

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060602

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070205

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070213

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20070323

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20070328

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20070328

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070813

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070904

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20071204

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20071207

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080304

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080408

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080414

R150 Certificate of patent or registration of utility model

Ref document number: 4113637

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110418

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120418

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120418

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130418

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130418

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140418

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R370 Written measure of declining of transfer procedure

Free format text: JAPANESE INTERMEDIATE CODE: R370

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term