JP4149416B2 - 圧電薄膜共振子およびフィルタならびにそれらの製造方法 - Google Patents
圧電薄膜共振子およびフィルタならびにそれらの製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000010408 film Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 69
- 239000002131 composite material Substances 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 239000011800 void material Substances 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 35
- 239000000243 solution Substances 0.000 description 15
- 239000011651 chromium Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
12、22、32 SiO2膜
13、23、33、43 下部電極
14、24、34、44 圧電膜
15、25、35、45 上部電極
16 バイアホール
26、36 キャビティ
42 空隙
46 メンブレン部
47 エッチング液導入孔
48 犠牲層
Claims (9)
- 素子基板の平坦主面上に下部電極と圧電膜と上部電極とが順次積層された複合膜を備え、前記圧電膜を挟む前記上部電極と前記下部電極との重なり領域であるメンブレン領域に対応する前記素子基板の領域には前記下部電極との間にドーム状の膨らみを有する空隙が設けられており、
前記空隙は前記複合膜により閉じられた閉空間であって、前記素子基板面上への投影形状が閉曲線からなる輪郭を有していることを特徴とする圧電薄膜共振子。 - 前記空隙の前記素子基板面上への投影形状は、前記メンブレン領域の前記素子基板面上への投影形状と同じのサイズであることを特徴とする請求項1に記載の圧電薄膜共振子。
- 前記下部電極には、前記空隙に通じる孔部が設けられていることを特徴とする請求項1又は2に記載の圧電薄膜共振子。
- 前記圧電膜は、(002)方向を主軸とする配向性をもつ窒化アルミニウム(AlN)または酸化亜鉛(ZnO)であることを特徴とする請求項1から3の何れかに記載の圧電薄膜共振子。
- 請求項1から4の何れかに記載の圧電薄膜共振子を複数組み合わせて構成されていることを特徴とするフィルタ。
- 素子基板の平坦主面上に犠牲層をパターン形成する第1のステップと、
前記犠牲層上に前記素子基板の主面に接する下部電極をパターン形成する第2のステップと、
前記下部電極上に圧電膜を形成する第3のステップと、
前記圧電膜上に一部領域が前記下部電極と重なる上部電極をパターン形成する第4のステップと、
前記犠牲層の表面の一部が露出するように前記下部電極の一部に開口部を形成する第5のステップと、
前記開口部からエッチング液を導入して前記下部電極下方の犠牲層を除去し、前記複合膜により閉じられた閉空間であって、前記素子基板面上への投影形状が閉曲線からなる輪郭を有している空隙を形成する第6のステップと、を備えていることを特徴とする圧電薄膜共振子の製造方法。 - 素子基板の平坦主面上に犠牲層をパターン形成する第1のステップと、
前記犠牲層上に前記素子基板の主面に接する下部電極をパターン形成する第2のステップと、
前記犠牲層の表面の一部が露出するように前記下部電極の一部に開口部を形成する第3のステップと、
前記下部電極上に圧電膜を形成する第4のステップと、
前記圧電膜上に一部領域が前記下部電極と重なる上部電極をパターン形成する第5のステップと、
前記開口部からエッチング液を導入して前記下部電極下方の犠牲層を除去し、前記複合膜により閉じられた閉空間であって、前記素子基板面上への投影形状が閉曲線からなる輪郭を有している空隙を形成する第6のステップと、を備えていることを特徴とする圧電薄膜共振子の製造方法。 - 前記第1のステップにより形成される前記犠牲層のパターンは、前記空隙と前記開口部とを結ぶ流路部を有していることを特徴とする請求項6または7に記載の圧電薄膜共振子の製造方法。
- 圧電薄膜共振子を複数組み合わせて構成されたフィルタの製造方法であって、該圧電薄膜共振子の少なくとも1つは請求項6から8の何れかに記載された方法により製造されたものであることを特徴とするフィルタの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2004162646A JP4149416B2 (ja) | 2004-05-31 | 2004-05-31 | 圧電薄膜共振子およびフィルタならびにそれらの製造方法 |
US11/138,893 US7432631B2 (en) | 2004-05-31 | 2005-05-27 | Piezoelectric thin-film resonator and filter and fabricating method |
KR1020050045525A KR100710780B1 (ko) | 2004-05-31 | 2005-05-30 | 압전 박막 공진자, 필터 및 이들의 제조 방법 |
CNB2005100760890A CN100499366C (zh) | 2004-05-31 | 2005-05-31 | 压电薄膜谐振器和滤波器及其制造方法 |
DE602005000537T DE602005000537T2 (de) | 2004-05-31 | 2005-05-31 | Piezoelektrischer Dünnschichtresonator, Filter damit und zugehörige Herstellungsmethode |
EP05253333A EP1603234B1 (en) | 2004-05-31 | 2005-05-31 | Piezoelectric thin-film resonator and filter and fabricating method |
Applications Claiming Priority (1)
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JP2004162646A JP4149416B2 (ja) | 2004-05-31 | 2004-05-31 | 圧電薄膜共振子およびフィルタならびにそれらの製造方法 |
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JP2005347898A JP2005347898A (ja) | 2005-12-15 |
JP4149416B2 true JP4149416B2 (ja) | 2008-09-10 |
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JP2004162646A Expired - Lifetime JP4149416B2 (ja) | 2004-05-31 | 2004-05-31 | 圧電薄膜共振子およびフィルタならびにそれらの製造方法 |
Country Status (6)
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US (1) | US7432631B2 (ja) |
EP (1) | EP1603234B1 (ja) |
JP (1) | JP4149416B2 (ja) |
KR (1) | KR100710780B1 (ja) |
CN (1) | CN100499366C (ja) |
DE (1) | DE602005000537T2 (ja) |
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US20100109809A1 (en) * | 2007-01-17 | 2010-05-06 | Kensuke Tanaka | Thin film piezoelectric resonator and thin film piezoelectric filter |
JP5080858B2 (ja) * | 2007-05-17 | 2012-11-21 | 太陽誘電株式会社 | 圧電薄膜共振器およびフィルタ |
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KR100398363B1 (ko) | 2000-12-05 | 2003-09-19 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
US6714102B2 (en) | 2001-03-01 | 2004-03-30 | Agilent Technologies, Inc. | Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method |
JP3939939B2 (ja) | 2001-07-17 | 2007-07-04 | 富士通株式会社 | 圧電薄膜共振素子の製造方法 |
JP3954395B2 (ja) | 2001-10-26 | 2007-08-08 | 富士通株式会社 | 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法 |
JP2003163566A (ja) | 2001-11-22 | 2003-06-06 | Toshiba Corp | 薄膜圧電共振器及びその製造方法 |
JP3969224B2 (ja) | 2002-01-08 | 2007-09-05 | 株式会社村田製作所 | 圧電共振子及びそれを用いた圧電フィルタ・デュプレクサ・通信装置 |
KR100616508B1 (ko) | 2002-04-11 | 2006-08-29 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
JP2004120016A (ja) * | 2002-09-20 | 2004-04-15 | Fujitsu Media Device Kk | フィルタ装置 |
JP4024741B2 (ja) | 2003-10-20 | 2007-12-19 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子及びフィルタ |
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2004
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- 2005-05-31 DE DE602005000537T patent/DE602005000537T2/de active Active
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DE602005000537D1 (de) | 2007-03-22 |
JP2005347898A (ja) | 2005-12-15 |
KR100710780B1 (ko) | 2007-04-24 |
DE602005000537T2 (de) | 2007-06-21 |
US7432631B2 (en) | 2008-10-07 |
CN100499366C (zh) | 2009-06-10 |
CN1716768A (zh) | 2006-01-04 |
US20050264137A1 (en) | 2005-12-01 |
KR20060046272A (ko) | 2006-05-17 |
EP1603234B1 (en) | 2007-02-07 |
EP1603234A1 (en) | 2005-12-07 |
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