DE602005000537D1 - Piezoelektrischer Dünnschichtresonator, Filter damit und zugehörige Herstellungsmethode - Google Patents

Piezoelektrischer Dünnschichtresonator, Filter damit und zugehörige Herstellungsmethode

Info

Publication number
DE602005000537D1
DE602005000537D1 DE602005000537T DE602005000537T DE602005000537D1 DE 602005000537 D1 DE602005000537 D1 DE 602005000537D1 DE 602005000537 T DE602005000537 T DE 602005000537T DE 602005000537 T DE602005000537 T DE 602005000537T DE 602005000537 D1 DE602005000537 D1 DE 602005000537D1
Authority
DE
Germany
Prior art keywords
filter
piezoelectric thin
film resonator
associated manufacturing
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005000537T
Other languages
English (en)
Other versions
DE602005000537T2 (de
Inventor
Shinji Taniguchi
Tokihiro Nishihara
Takeshi Sakashita
Tsuyoshi Yokoyama
Masafumi Iwaki
Masanori Ueda
Tsutomu Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Fujitsu Ltd
Fujitsu Media Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Fujitsu Media Devices Ltd filed Critical Fujitsu Ltd
Publication of DE602005000537D1 publication Critical patent/DE602005000537D1/de
Application granted granted Critical
Publication of DE602005000537T2 publication Critical patent/DE602005000537T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE602005000537T 2004-05-31 2005-05-31 Piezoelektrischer Dünnschichtresonator, Filter damit und zugehörige Herstellungsmethode Active DE602005000537T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004162646 2004-05-31
JP2004162646A JP4149416B2 (ja) 2004-05-31 2004-05-31 圧電薄膜共振子およびフィルタならびにそれらの製造方法

Publications (2)

Publication Number Publication Date
DE602005000537D1 true DE602005000537D1 (de) 2007-03-22
DE602005000537T2 DE602005000537T2 (de) 2007-06-21

Family

ID=34982189

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005000537T Active DE602005000537T2 (de) 2004-05-31 2005-05-31 Piezoelektrischer Dünnschichtresonator, Filter damit und zugehörige Herstellungsmethode

Country Status (6)

Country Link
US (1) US7432631B2 (de)
EP (1) EP1603234B1 (de)
JP (1) JP4149416B2 (de)
KR (1) KR100710780B1 (de)
CN (1) CN100499366C (de)
DE (1) DE602005000537T2 (de)

Families Citing this family (28)

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JP2005073175A (ja) * 2003-08-27 2005-03-17 Fujitsu Media Device Kk 圧電薄膜共振子及びその製造方法
US7889027B2 (en) * 2005-09-09 2011-02-15 Sony Corporation Film bulk acoustic resonator shaped as an ellipse with a part cut off
US7486003B1 (en) * 2005-09-22 2009-02-03 Sei-Joo Jang Polymer bulk acoustic resonator
JP4707533B2 (ja) * 2005-10-27 2011-06-22 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
CN101292422B (zh) * 2005-11-04 2013-01-16 株式会社村田制作所 压电谐振器、滤波器、以及双模滤波器
JP2007208728A (ja) * 2006-02-02 2007-08-16 Fujitsu Media Device Kk 圧電薄膜共振器、フィルタおよびその製造方法
JP4707574B2 (ja) * 2006-02-02 2011-06-22 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびその製造方法
JP4719623B2 (ja) * 2006-05-31 2011-07-06 太陽誘電株式会社 フィルタ
JP4968900B2 (ja) * 2006-10-17 2012-07-04 太陽誘電株式会社 ラダー型フィルタの製造方法
WO2008088010A1 (ja) * 2007-01-17 2008-07-24 Ube Industries, Ltd. 薄膜圧電共振器および薄膜圧電フィルタ
JP5080858B2 (ja) * 2007-05-17 2012-11-21 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
JP5191762B2 (ja) * 2008-03-06 2013-05-08 太陽誘電株式会社 圧電薄膜共振器、フィルタ、および通信装置
JP5030163B2 (ja) * 2008-03-19 2012-09-19 日本電信電話株式会社 微小機械共振器およびその製造方法
JP2009252757A (ja) * 2008-04-01 2009-10-29 Seiko Epson Corp 圧電素子およびその製造方法、圧電アクチュエータ、並びに、液体噴射ヘッド
JP5226409B2 (ja) 2008-07-17 2013-07-03 太陽誘電株式会社 共振デバイス、通信モジュール、通信装置、共振デバイスの製造方法
JP5322597B2 (ja) * 2008-11-13 2013-10-23 太陽誘電株式会社 共振子、フィルタ、デュープレクサおよび電子装置
KR101708893B1 (ko) 2010-09-01 2017-03-08 삼성전자주식회사 체적 음향 공진기 구조 및 제조 방법
FR2968861B1 (fr) * 2010-12-10 2013-09-27 Commissariat Energie Atomique Procédé de fabrication d'un résonateur a ondes acoustiques comprenant une membrane suspendue
JP5815329B2 (ja) 2011-08-22 2015-11-17 太陽誘電株式会社 弾性波デバイス
CN103234562A (zh) * 2013-04-19 2013-08-07 山东科技大学 一种具有半椭圆形微流道的压电薄膜谐振传感器
JP6205937B2 (ja) 2013-07-22 2017-10-04 セイコーエプソン株式会社 圧電膜製造方法、振動子製造方法、振動片、振動子、発振器、電子機器及び移動体
US9673384B2 (en) * 2014-06-06 2017-06-06 Akoustis, Inc. Resonance circuit with a single crystal capacitor dielectric material
KR102138345B1 (ko) * 2014-10-29 2020-07-27 가부시키가이샤 무라타 세이사쿠쇼 압전 모듈
JP6757594B2 (ja) 2016-05-18 2020-09-23 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
US10734968B2 (en) * 2016-08-26 2020-08-04 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic resonator and filter including the same
CN107979352B (zh) * 2016-10-24 2021-07-06 天津大学 一种薄膜体声波微流控混合装置
JP6886357B2 (ja) 2017-07-03 2021-06-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
US11057017B2 (en) * 2017-08-17 2021-07-06 Samsung Electro-Mechanics Co., Ltd Bulk-acoustic wave resonator

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Publication number Priority date Publication date Assignee Title
JPS60189307A (ja) 1984-03-09 1985-09-26 Toshiba Corp 圧電薄膜共振器およびその製造方法
JPS6276913A (ja) 1985-09-30 1987-04-09 Toshiba Corp 薄膜弾性波装置
JPS631200A (ja) * 1986-06-19 1988-01-06 Onkyo Corp 圧電型振動素子
US6051907A (en) 1996-10-10 2000-04-18 Nokia Mobile Phones Limited Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
US6060818A (en) 1998-06-02 2000-05-09 Hewlett-Packard Company SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
US6349454B1 (en) * 1999-07-29 2002-02-26 Agere Systems Guardian Corp. Method of making thin film resonator apparatus
JP2001111371A (ja) 1999-08-03 2001-04-20 Ngk Spark Plug Co Ltd ラダー型圧電セラミックフィルタの製造方法
US6420202B1 (en) * 2000-05-16 2002-07-16 Agere Systems Guardian Corp. Method for shaping thin film resonators to shape acoustic modes therein
KR100473871B1 (ko) * 2000-11-13 2005-03-08 주식회사 엠에스솔루션 박막 필터
KR100398363B1 (ko) 2000-12-05 2003-09-19 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
US6714102B2 (en) 2001-03-01 2004-03-30 Agilent Technologies, Inc. Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method
JP3939939B2 (ja) * 2001-07-17 2007-07-04 富士通株式会社 圧電薄膜共振素子の製造方法
JP3954395B2 (ja) 2001-10-26 2007-08-08 富士通株式会社 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法
JP2003163566A (ja) 2001-11-22 2003-06-06 Toshiba Corp 薄膜圧電共振器及びその製造方法
JP3969224B2 (ja) * 2002-01-08 2007-09-05 株式会社村田製作所 圧電共振子及びそれを用いた圧電フィルタ・デュプレクサ・通信装置
KR100616508B1 (ko) 2002-04-11 2006-08-29 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
JP2004120016A (ja) * 2002-09-20 2004-04-15 Fujitsu Media Device Kk フィルタ装置
JP4024741B2 (ja) * 2003-10-20 2007-12-19 富士通メディアデバイス株式会社 圧電薄膜共振子及びフィルタ

Also Published As

Publication number Publication date
JP2005347898A (ja) 2005-12-15
CN1716768A (zh) 2006-01-04
US7432631B2 (en) 2008-10-07
EP1603234B1 (de) 2007-02-07
JP4149416B2 (ja) 2008-09-10
KR100710780B1 (ko) 2007-04-24
CN100499366C (zh) 2009-06-10
US20050264137A1 (en) 2005-12-01
KR20060046272A (ko) 2006-05-17
DE602005000537T2 (de) 2007-06-21
EP1603234A1 (de) 2005-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TAIYO YUDEN CO., LTD., TOKIO/TOKYO, JP

Owner name: FUJITSU MEDIA DEVICES LIMITED, YOKOHAMA, KANAG, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE

8327 Change in the person/name/address of the patent owner

Owner name: TAIYO YUDEN CO., LTD., TOKIO/TOKYO, JP