JP5220503B2 - 弾性波デバイス - Google Patents
弾性波デバイス Download PDFInfo
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- JP5220503B2 JP5220503B2 JP2008190280A JP2008190280A JP5220503B2 JP 5220503 B2 JP5220503 B2 JP 5220503B2 JP 2008190280 A JP2008190280 A JP 2008190280A JP 2008190280 A JP2008190280 A JP 2008190280A JP 5220503 B2 JP5220503 B2 JP 5220503B2
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- 239000010408 film Substances 0.000 claims description 71
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- 239000010409 thin film Substances 0.000 claims description 40
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 239000013067 intermediate product Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
Description
[弾性波デバイスの構成]
本実施形態における弾性波デバイスは、キャビティ型FBARで構成される。図1は、第1の実施形態における弾性波デバイスの製造過程における中間製品を示す斜視図と、その中間製品の層構成を分解して示す分解斜視図を含む。図1に示す弾性波デバイスの中間製品は、基板1と、基板上に順に形成される犠牲層3、下部電極2、圧電膜4および2つの上部電極6を備える。犠牲層3は最終的には除去されるので、犠牲層3の領域はキャビティになる。圧電膜4と下部電極2の中央付近には、これらを貫いて犠牲層3に達する貫通孔8が形成されている。この貫通孔8は、犠牲層3を除去するための貫通孔である。
図3は、FBARごとにキャビティが設けられる構成の弾性波デバイスの中間製品の一例を示す図である。図3(a)は、当該中間製品を上から見た場合の平面図である。図3(a)において、犠牲層103(すなわち、キャビティ)が形成される領域は点線で示されている。図3(b)は、図3(a)のA−A´線断面図である。図3(c)は、図3(a)のB−B´線断面図である。
図4は図1および図2に示した弾性波デバイスの製作工程を図示したものである。先ず、図4(a)に示すようなSi基板1(あるいは石英基板)上に、犠牲層3となるMgO(20nm程度の厚み)をスパッタリング法あるいは真空蒸着法により成膜する(図4(b))。犠牲層3としては、MgOの他にも、ZnO,Ge,Tiなど、エッチング液により容易に溶解できる材料であれば特に制限はない。
貫通孔とキャビティの位置関係について説明する。図5はこの説明をするために用いるキャビティ型FBARの構成例を示す図である。図5(a)は、犠牲層エッチングのためのエッチング液の導入口(貫通孔81)を共振子エリア(メンブレン領域)の中心に配置した場合の平面図およびA−A´線断面図である。図5(b)は、キャビティ領域の周縁部で、かつ共振エリアの外側(周辺)に貫通孔を配置した場合の平面図およびB−B´線断面図である。
本実施形態は、第1の実施形態における弾性波デバイスを、FBARを用いたフィルタとして構成する例である。FBARを用いたフィルタとして、ラダー型フィルタが主に用いられる。ラダー型フィルタは、入力端子Tinと出力端子Toutとの間に直列に直列共振器が接続され、並列共振器が並列に接続されて構成され、バンドパスフィルタとして機能する。
本実施形態は、キャビティが基板に埋め込まれた形で(基板表面加工方式で)形成される場合の例である。図10は、第3の実施形態にかかる弾性波デバイスの断面図である。図10に示す弾性波デバイスは、基板15の表面がキャビティ(空隙)35になるように加工されており、キャビティ35の上に、下部電極25および上部電極65が圧電膜45を挟んで積層された領域(メンブレン領域)が形成される。キャビティ35の上には、2つのメンブレン領域が形成されている。すなわち、2つのFABRが1つのキャビティ35を共有する構成になっている。
基板と、前記基板上に設けられた下部電極と、前記下部電極上に設けられた圧電膜と、前記圧電膜上に設けられた上部電極とを有し、
前記上部電極と前記下部電極が前記圧電膜を挟んで対向するメンブレン領域が、空隙を介して前記基板上に設けられて構成される圧電薄膜共振器を複数備え、
前記複数の圧電薄膜共振器が一つの空隙を共有していることを特徴とする弾性波デバイス。
前記複数の圧電薄膜共振器は、下部電極も共有している、付記1に記載の弾性波デバイス。
圧電薄膜共振器の前記メンブレン領域以外の領域において、圧電薄膜共振器の上面から前記空隙へと貫通する貫通孔が形成される、付記1または2に記載の弾性波デバイス。
前記基板面において空隙が占有する領域の中心付近に、圧電薄膜共振器の上面から前記空隙へと貫通する貫通孔が形成される、付記1〜3のいずれか1項に記載の弾性波デバイス。
前記空隙は平坦な前記基板上に形成されることを特徴とする付記1から4のいずれか1項に記載の弾性波デバイス。
前記下部電極は、前記基板との間にドーム状の膨らみを有する空隙が形成されるように設けられたことを特徴とする付記1から5のいずれか1項に記載の弾性波デバイス。
前記圧電膜は、(002)方向を主軸とする配向性を示す窒化アルミニウムおよび酸化亜鉛のいずれかであることを特徴とする付記1から6のいずれか1項記載の弾性波デバイス。
付記1〜7のいずれか1項に記載の弾性波デバイスを備える通信機器。
基板上に空隙を形成するための犠牲層を形成する工程と、
前記犠牲層および前記基板上に下部電極、圧電膜および上部電極を形成して、前記上部電極と前記下部電極が前記圧電膜を挟んで対向するメンブレン領域を、前記犠牲層の上に複数形成する工程と、
前記下部電極、前記圧電膜および前記上部電極の少なくとも1つを貫通する貫通孔を形成する工程と、
前記貫通孔よりエッチング液を導入し前記犠牲層を除去する工程と、を有する弾性波デバイスの製造方法。
2、21、22、24、25 下部電極
3 犠牲層
4、41、42、44、45 圧電膜
6、61、62、64、65 上部電極
8、81、82、84、85 貫通孔
9、31、32、34、35 キャビティ
Claims (5)
- 基板と、前記基板上に設けられた下部電極と、前記下部電極上に設けられた圧電膜と、前記圧電膜上に設けられた上部電極とを有し、
前記上部電極と前記下部電極が前記圧電膜を挟んで対向するメンブレン領域が、空隙を介して前記基板上に設けられて構成される圧電薄膜共振器を複数備え、
前記複数の圧電薄膜共振器が一つの空隙を共有しており、
圧電薄膜共振器の前記メンブレン領域以外の領域であって、前記基板面において空隙が占有する領域の中心付近に、圧電薄膜共振器の上面から前記空隙へと貫通する貫通孔が形成され、
前記一つの空隙を共有する前記複数の圧電薄膜共振器は、ラダー型フィルタを構成する少なくとも1つの直列共振器と少なくとも1つの並列共振器とを含み、
前記貫通孔の数は、前記ラダー型フィルタを構成する共振器の数より少ないことを特徴とする弾性波デバイス。 - 前記複数の圧電薄膜共振器は、下部電極も共有している、請求項1に記載の弾性波デバイス。
- 前記空隙は平坦な前記基板上に形成されることを特徴とする請求項1または2に記載の弾性波デバイス。
- 請求項1〜3のいずれか1項に記載の弾性波デバイスを備える通信機器。
- 基板上に空隙を形成するための犠牲層を形成する工程と、
前記犠牲層および前記基板上に下部電極、圧電膜および上部電極を形成して、前記上部電極と前記下部電極が前記圧電膜を挟んで対向するメンブレン領域を、前記犠牲層の上に複数形成する工程と、
前記下部電極、前記圧電膜および前記上部電極の少なくとも1つを貫通する貫通孔を形成する工程と、
前記貫通孔よりエッチング液を導入し前記犠牲層を除去する工程と、を有し、
前記貫通孔は、圧電薄膜共振器の前記メンブレン領域以外の領域であって、前記基板面において空隙が占有する領域の中心付近に形成され、
前記一つの空隙を共有する前記複数の圧電薄膜共振器は、ラダー型フィルタを構成する少なくとも1つの直列共振器と少なくとも1つの並列共振器とを含み、
前記貫通孔の数は、前記ラダー型フィルタを構成する共振器の数より少ない、弾性波デバイスの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2008190280A JP5220503B2 (ja) | 2008-07-23 | 2008-07-23 | 弾性波デバイス |
US12/503,583 US8723623B2 (en) | 2008-07-23 | 2009-07-15 | Acoustic wave device, method of manufacturing acoustic wave device and transmission apparatus |
KR20090066704A KR101140064B1 (ko) | 2008-07-23 | 2009-07-22 | 탄성파 디바이스 |
CN200910151476A CN101635562A (zh) | 2008-07-23 | 2009-07-23 | 声波装置,制作声波装置和传输设备的方法 |
KR1020110117999A KR20110133013A (ko) | 2008-07-23 | 2011-11-14 | 탄성파 디바이스 |
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KR20110133013A (ko) | 2011-12-09 |
CN101635562A (zh) | 2010-01-27 |
JP2010028679A (ja) | 2010-02-04 |
KR20100010911A (ko) | 2010-02-02 |
US8723623B2 (en) | 2014-05-13 |
US20100019866A1 (en) | 2010-01-28 |
KR101140064B1 (ko) | 2012-04-30 |
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