JP4097613B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4097613B2 JP4097613B2 JP2004065341A JP2004065341A JP4097613B2 JP 4097613 B2 JP4097613 B2 JP 4097613B2 JP 2004065341 A JP2004065341 A JP 2004065341A JP 2004065341 A JP2004065341 A JP 2004065341A JP 4097613 B2 JP4097613 B2 JP 4097613B2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- semiconductor device
- temperature
- solder
- power module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H10W40/255—
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- H10W40/00—
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- H10W76/15—
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- H10W72/5524—
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- H10W72/932—
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- H10W90/00—
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- H10W90/753—
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004065341A JP4097613B2 (ja) | 2004-03-09 | 2004-03-09 | 半導体装置 |
| DE200510008346 DE102005008346A1 (de) | 2004-03-09 | 2005-02-23 | Halbleitervorrichtung |
| US11/066,140 US20050199999A1 (en) | 2004-03-09 | 2005-02-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004065341A JP4097613B2 (ja) | 2004-03-09 | 2004-03-09 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007330531A Division JP4673360B2 (ja) | 2007-12-21 | 2007-12-21 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005259753A JP2005259753A (ja) | 2005-09-22 |
| JP2005259753A5 JP2005259753A5 (enExample) | 2006-10-05 |
| JP4097613B2 true JP4097613B2 (ja) | 2008-06-11 |
Family
ID=34909377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004065341A Expired - Lifetime JP4097613B2 (ja) | 2004-03-09 | 2004-03-09 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20050199999A1 (enExample) |
| JP (1) | JP4097613B2 (enExample) |
| DE (1) | DE102005008346A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5168866B2 (ja) * | 2006-09-28 | 2013-03-27 | 三菱電機株式会社 | パワー半導体モジュール |
| US20080234953A1 (en) * | 2007-03-22 | 2008-09-25 | Ignowski James S | Power estimation for a semiconductor device |
| JP5252819B2 (ja) * | 2007-03-26 | 2013-07-31 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE102007052630B4 (de) * | 2007-11-05 | 2019-08-14 | Infineon Technologies Ag | Leistungshalbleitermodul mit Temperatursensor |
| US8057094B2 (en) * | 2007-11-16 | 2011-11-15 | Infineon Technologies Ag | Power semiconductor module with temperature measurement |
| KR101013557B1 (ko) | 2008-11-06 | 2011-02-14 | 주식회사 하이닉스반도체 | 플랙시블 반도체 패키지 및 이를 제조하기 위한 와이어 본딩 장치 |
| JP5921055B2 (ja) * | 2010-03-08 | 2016-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| WO2011155032A1 (ja) * | 2010-06-09 | 2011-12-15 | トヨタ自動車株式会社 | クラック特定装置と半導体装置 |
| CN102623416B (zh) * | 2012-04-24 | 2015-09-02 | 苏州远创达科技有限公司 | 一种射频功放模块的功率器件无封装结构及其组装方法 |
| US9941242B2 (en) | 2012-04-24 | 2018-04-10 | Innogration (Suzhou) Co., Ltd. | Unpacked structure for power device of radio frequency power amplification module and assembly method therefor |
| CN102956605B (zh) * | 2012-11-19 | 2016-03-23 | 苏州远创达科技有限公司 | 一种半导体部件及其制作方法 |
| CN105794094B (zh) | 2013-12-04 | 2018-09-28 | 三菱电机株式会社 | 半导体装置 |
| JP6272213B2 (ja) * | 2014-11-26 | 2018-01-31 | 三菱電機株式会社 | 半導体装置 |
| CN108604580B (zh) * | 2016-02-04 | 2021-08-13 | 三菱电机株式会社 | 半导体装置 |
| JP7037390B2 (ja) * | 2018-02-27 | 2022-03-16 | 新電元工業株式会社 | パワーモジュール |
| EP3637461B1 (en) * | 2018-10-11 | 2025-06-04 | ABB Schweiz AG | Power electronic module |
| JP7088048B2 (ja) * | 2019-01-30 | 2022-06-21 | 株式会社デンソー | 半導体装置 |
| JP2021005692A (ja) | 2019-06-27 | 2021-01-14 | 株式会社デンソー | 半導体装置 |
| KR102602641B1 (ko) * | 2023-02-15 | 2023-11-16 | (주)아인테크놀러지 | 기판 크랙 검사장치 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3168874B2 (ja) * | 1995-05-23 | 2001-05-21 | 富士電機株式会社 | 半導体装置 |
| DE19534604C1 (de) * | 1995-09-18 | 1996-10-24 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement mit mehreren Temperatursensoren zum Schutz vor Überlastung |
| JPH09148523A (ja) * | 1995-11-21 | 1997-06-06 | Toshiba Corp | 半導体装置 |
| US6345238B1 (en) * | 1998-12-21 | 2002-02-05 | Airpax Corporation, Llc | Linear temperature sensor |
| US6137165A (en) * | 1999-06-25 | 2000-10-24 | International Rectifier Corp. | Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET |
| JP4089143B2 (ja) * | 2000-08-30 | 2008-05-28 | 三菱電機株式会社 | 電力用半導体装置 |
| JP3668708B2 (ja) * | 2001-10-22 | 2005-07-06 | 株式会社日立製作所 | 故障検知システム |
| JP3886793B2 (ja) * | 2001-12-03 | 2007-02-28 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| US6914764B2 (en) * | 2002-07-11 | 2005-07-05 | International Business Machines Corporation | On-chip thermal sensing circuit |
| US6786639B2 (en) * | 2002-08-30 | 2004-09-07 | International Business Machines Corporation | Device for sensing temperature of an electronic chip |
-
2004
- 2004-03-09 JP JP2004065341A patent/JP4097613B2/ja not_active Expired - Lifetime
-
2005
- 2005-02-23 DE DE200510008346 patent/DE102005008346A1/de not_active Withdrawn
- 2005-02-25 US US11/066,140 patent/US20050199999A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| DE102005008346A1 (de) | 2005-09-29 |
| JP2005259753A (ja) | 2005-09-22 |
| US20050199999A1 (en) | 2005-09-15 |
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