JP6384406B2 - 半導体装置 - Google Patents
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- JP6384406B2 JP6384406B2 JP2015122981A JP2015122981A JP6384406B2 JP 6384406 B2 JP6384406 B2 JP 6384406B2 JP 2015122981 A JP2015122981 A JP 2015122981A JP 2015122981 A JP2015122981 A JP 2015122981A JP 6384406 B2 JP6384406 B2 JP 6384406B2
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 125000006850 spacer group Chemical group 0.000 claims description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000000470 constituent Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000005094 computer simulation Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L2924/351—Thermal stress
Description
最初に、図1〜図3を参照して、本実施形態に係る半導体装置の概略構成について説明する。
第1実施形態では、第1素子たるIGBT10と、第2素子たるMOSFET20とを1つずつ有する半導体装置について説明したが、それぞれ複数の素子が一対の第1および第2ヒートシンク30,40の間に存在する形態であっても良い。
以上、本発明の好ましい実施形態について説明したが、本発明は上記した実施形態になんら制限されることなく、本発明の主旨を逸脱しない範囲において、種々変形して実施することが可能である。
Claims (4)
- 第1成分としてシリコンを主成分として形成され、一面とその反対の裏面に電極が設けられた第1素子(10〜14)と、
前記第1成分とは異なる第2成分を主成分として形成され、一面とその反対の裏面に電極が設けられた第2素子(20〜24)と、
前記第1素子および前記第2素子が載置されるヒートシンク(30)と、
前記第1素子の裏面側の電極と前記ヒートシンクとを電気的に接合する第1接合層(50)と、
前記第2素子の裏面側の電極と前記ヒートシンクとを電気的に接合する第2接合層(60)と、
前記ヒートシンクの表面の一部を露出しつつ、前記第1素子、前記第2素子、および前記ヒートシンクを被覆して保護するモールド樹脂(90)と、を備える半導体装置であって、
前記第1素子および前記第2素子の体格は、前記第2接合層よりも前記第1接合層の相当塑性ひずみ増分が大きくなるように設定されることを特徴とする半導体装置。 - 前記ヒートシンクは、第1ヒートシンク(30)と第2ヒートシンク(40)とを有し、
前記第1素子は前記第1接合層を介して前記第1ヒートシンクに載置されるとともに、前記第2素子は前記第2接合層を介して前記第1ヒートシンクに載置され、
前記第2ヒートシンクは前記第1ヒートシンクに対向して配置され、前記第1素子の一面側の電極と第1スペーサ(70)を介して接続されるとともに、前記第2素子の一面側の電極と第2スペーサ(80)を介して接続され、
前記第2ヒートシンクの表面の一部は前記モールド樹脂から露出することを特徴とする請求項1に記載の半導体装置。 - 前記第1素子および前記第2素子は、それぞれ前記一面および前記裏面が一辺を2mm以上とする正方形を成し、厚さが0.1mm以上とされ、
前記第1素子はシリコンを主成分とし、前記第2素子はシリコンカーバイドを主成分とし、
前記第1ヒートシンク、前記第2ヒートシンク、前記第1スペーサおよび前記第2スペーサは銅を主成分とし、
さらに、前記第1素子の一辺の長さをa1、厚さをb1とし、前記第2素子の一辺の長さをa2、厚さをb2とする場合に、
Δε1=(0.004b1+0.0003)a12+0.26
Δε2=(0.0075b2+0.0003)a22+0.03
により定義される第1接合層の相当塑性ひずみ増分Δε1と、第2接合層の相当塑性ひずみ増分Δε2とが、Δε1>Δε2の関係を満たすように、前記第1素子の一辺の長さa1、厚さb1、前記第2素子の一辺の長さa2、厚さb2が設定されることを特徴とする請求項2に記載の半導体装置。 - 前記第1素子、あるいは前記第2素子をそれぞれ複数備え、
対応する前記第1接合層の相当塑性ひずみ増分の最大値Δε1maxと、前記第2接合層の相当塑性ひずみ増分の最大値Δε2maxとが、Δε1max>Δε2maxの関係を満たすように、前記第1素子および前記第2素子の体格が設定されることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。
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JP2015122981A JP6384406B2 (ja) | 2015-06-18 | 2015-06-18 | 半導体装置 |
PCT/JP2016/002392 WO2016203705A1 (ja) | 2015-06-18 | 2016-05-16 | 半導体装置 |
US15/547,082 US9972612B2 (en) | 2015-06-18 | 2016-05-16 | Semiconductor device |
CN201680026155.XA CN107534035B (zh) | 2015-06-18 | 2016-05-16 | 半导体装置 |
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JP6384406B2 true JP6384406B2 (ja) | 2018-09-05 |
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JP (1) | JP6384406B2 (ja) |
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JP6772768B2 (ja) * | 2016-11-09 | 2020-10-21 | 株式会社デンソー | 半導体装置 |
KR102519530B1 (ko) | 2018-07-20 | 2023-04-10 | 삼성전자주식회사 | 반도체 패키지 |
JP7259655B2 (ja) * | 2019-09-04 | 2023-04-18 | 株式会社デンソー | パワーモジュール |
CN110634817B (zh) * | 2019-09-25 | 2023-04-18 | 湖南大学 | 一种由igbt和mosfet构成的混合功率模块的封装结构 |
US11610861B2 (en) * | 2020-09-14 | 2023-03-21 | Infineon Technologies Austria Ag | Diffusion soldering with contaminant protection |
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US7145254B2 (en) | 2001-07-26 | 2006-12-05 | Denso Corporation | Transfer-molded power device and method for manufacturing transfer-molded power device |
JP2008078679A (ja) * | 2001-07-26 | 2008-04-03 | Denso Corp | 半導体装置 |
JP4254527B2 (ja) * | 2003-12-24 | 2009-04-15 | 株式会社デンソー | 半導体装置 |
JP4302607B2 (ja) * | 2004-01-30 | 2009-07-29 | 株式会社デンソー | 半導体装置 |
DE102005016830A1 (de) * | 2004-04-14 | 2005-11-03 | Denso Corp., Kariya | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
JP2006020405A (ja) | 2004-06-30 | 2006-01-19 | National Institute Of Advanced Industrial & Technology | 半導体スイッチ回路 |
JP5078290B2 (ja) * | 2006-06-29 | 2012-11-21 | パナソニック株式会社 | パワー半導体モジュール |
JP5193777B2 (ja) | 2008-09-26 | 2013-05-08 | 株式会社東芝 | パワー半導体モジュールとそれを用いたインバータシステム |
MX2012008026A (es) * | 2010-01-18 | 2012-08-01 | Mitsubishi Electric Corp | Modulo de semiconductor de potencia, aparato convertidor de potencia y vagon de ferrocarril. |
WO2012144070A1 (ja) * | 2011-04-22 | 2012-10-26 | 三菱電機株式会社 | 半導体装置 |
JP5932269B2 (ja) | 2011-09-08 | 2016-06-08 | 株式会社東芝 | パワー半導体モジュール及びパワー半導体モジュールの駆動方法 |
JP2013074677A (ja) | 2011-09-27 | 2013-04-22 | Honda Motor Co Ltd | スイッチング制御装置 |
JP5978589B2 (ja) * | 2011-10-18 | 2016-08-24 | 富士電機株式会社 | パワー半導体装置の製造方法 |
JP5588956B2 (ja) * | 2011-11-30 | 2014-09-10 | 株式会社 日立パワーデバイス | パワー半導体装置 |
JP5546664B2 (ja) * | 2013-03-15 | 2014-07-09 | 三菱電機株式会社 | パワー半導体モジュール、電力変換装置および鉄道車両 |
DE112014000898T5 (de) * | 2013-09-05 | 2015-11-26 | Fuji Electric Co., Ltd. | Leistungshalbleitermodul |
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JP2017011026A (ja) | 2017-01-12 |
US9972612B2 (en) | 2018-05-15 |
CN107534035B (zh) | 2020-04-28 |
WO2016203705A1 (ja) | 2016-12-22 |
CN107534035A (zh) | 2018-01-02 |
US20180026021A1 (en) | 2018-01-25 |
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