JP2005259753A5 - - Google Patents

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Publication number
JP2005259753A5
JP2005259753A5 JP2004065341A JP2004065341A JP2005259753A5 JP 2005259753 A5 JP2005259753 A5 JP 2005259753A5 JP 2004065341 A JP2004065341 A JP 2004065341A JP 2004065341 A JP2004065341 A JP 2004065341A JP 2005259753 A5 JP2005259753 A5 JP 2005259753A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004065341A
Other languages
Japanese (ja)
Other versions
JP2005259753A (ja
JP4097613B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004065341A priority Critical patent/JP4097613B2/ja
Priority claimed from JP2004065341A external-priority patent/JP4097613B2/ja
Priority to DE200510008346 priority patent/DE102005008346A1/de
Priority to US11/066,140 priority patent/US20050199999A1/en
Publication of JP2005259753A publication Critical patent/JP2005259753A/ja
Publication of JP2005259753A5 publication Critical patent/JP2005259753A5/ja
Application granted granted Critical
Publication of JP4097613B2 publication Critical patent/JP4097613B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004065341A 2004-03-09 2004-03-09 半導体装置 Expired - Lifetime JP4097613B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004065341A JP4097613B2 (ja) 2004-03-09 2004-03-09 半導体装置
DE200510008346 DE102005008346A1 (de) 2004-03-09 2005-02-23 Halbleitervorrichtung
US11/066,140 US20050199999A1 (en) 2004-03-09 2005-02-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004065341A JP4097613B2 (ja) 2004-03-09 2004-03-09 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007330531A Division JP4673360B2 (ja) 2007-12-21 2007-12-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2005259753A JP2005259753A (ja) 2005-09-22
JP2005259753A5 true JP2005259753A5 (enExample) 2006-10-05
JP4097613B2 JP4097613B2 (ja) 2008-06-11

Family

ID=34909377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004065341A Expired - Lifetime JP4097613B2 (ja) 2004-03-09 2004-03-09 半導体装置

Country Status (3)

Country Link
US (1) US20050199999A1 (enExample)
JP (1) JP4097613B2 (enExample)
DE (1) DE102005008346A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5168866B2 (ja) * 2006-09-28 2013-03-27 三菱電機株式会社 パワー半導体モジュール
US20080234953A1 (en) * 2007-03-22 2008-09-25 Ignowski James S Power estimation for a semiconductor device
JP5252819B2 (ja) * 2007-03-26 2013-07-31 三菱電機株式会社 半導体装置およびその製造方法
DE102007052630B4 (de) * 2007-11-05 2019-08-14 Infineon Technologies Ag Leistungshalbleitermodul mit Temperatursensor
US8057094B2 (en) * 2007-11-16 2011-11-15 Infineon Technologies Ag Power semiconductor module with temperature measurement
KR101013557B1 (ko) 2008-11-06 2011-02-14 주식회사 하이닉스반도체 플랙시블 반도체 패키지 및 이를 제조하기 위한 와이어 본딩 장치
JP5921055B2 (ja) * 2010-03-08 2016-05-24 ルネサスエレクトロニクス株式会社 半導体装置
WO2011155032A1 (ja) * 2010-06-09 2011-12-15 トヨタ自動車株式会社 クラック特定装置と半導体装置
CN102623416B (zh) * 2012-04-24 2015-09-02 苏州远创达科技有限公司 一种射频功放模块的功率器件无封装结构及其组装方法
US9941242B2 (en) 2012-04-24 2018-04-10 Innogration (Suzhou) Co., Ltd. Unpacked structure for power device of radio frequency power amplification module and assembly method therefor
CN102956605B (zh) * 2012-11-19 2016-03-23 苏州远创达科技有限公司 一种半导体部件及其制作方法
CN105794094B (zh) 2013-12-04 2018-09-28 三菱电机株式会社 半导体装置
JP6272213B2 (ja) * 2014-11-26 2018-01-31 三菱電機株式会社 半導体装置
CN108604580B (zh) * 2016-02-04 2021-08-13 三菱电机株式会社 半导体装置
JP7037390B2 (ja) * 2018-02-27 2022-03-16 新電元工業株式会社 パワーモジュール
EP3637461B1 (en) * 2018-10-11 2025-06-04 ABB Schweiz AG Power electronic module
JP7088048B2 (ja) * 2019-01-30 2022-06-21 株式会社デンソー 半導体装置
JP2021005692A (ja) 2019-06-27 2021-01-14 株式会社デンソー 半導体装置
KR102602641B1 (ko) * 2023-02-15 2023-11-16 (주)아인테크놀러지 기판 크랙 검사장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3168874B2 (ja) * 1995-05-23 2001-05-21 富士電機株式会社 半導体装置
DE19534604C1 (de) * 1995-09-18 1996-10-24 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement mit mehreren Temperatursensoren zum Schutz vor Überlastung
JPH09148523A (ja) * 1995-11-21 1997-06-06 Toshiba Corp 半導体装置
US6345238B1 (en) * 1998-12-21 2002-02-05 Airpax Corporation, Llc Linear temperature sensor
US6137165A (en) * 1999-06-25 2000-10-24 International Rectifier Corp. Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
JP4089143B2 (ja) * 2000-08-30 2008-05-28 三菱電機株式会社 電力用半導体装置
JP3668708B2 (ja) * 2001-10-22 2005-07-06 株式会社日立製作所 故障検知システム
JP3886793B2 (ja) * 2001-12-03 2007-02-28 株式会社ルネサステクノロジ 半導体集積回路装置
US6914764B2 (en) * 2002-07-11 2005-07-05 International Business Machines Corporation On-chip thermal sensing circuit
US6786639B2 (en) * 2002-08-30 2004-09-07 International Business Machines Corporation Device for sensing temperature of an electronic chip

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