JP4056588B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4056588B2
JP4056588B2 JP18526397A JP18526397A JP4056588B2 JP 4056588 B2 JP4056588 B2 JP 4056588B2 JP 18526397 A JP18526397 A JP 18526397A JP 18526397 A JP18526397 A JP 18526397A JP 4056588 B2 JP4056588 B2 JP 4056588B2
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Japan
Prior art keywords
film
semiconductor device
region
wiring
electrode
Prior art date
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Expired - Fee Related
Application number
JP18526397A
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English (en)
Japanese (ja)
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JPH10189912A (ja
JPH10189912A5 (enExample
Inventor
俊二 中村
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Fujitsu Ltd
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Fujitsu Ltd
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Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18526397A priority Critical patent/JP4056588B2/ja
Priority to US08/965,010 priority patent/US6576527B2/en
Publication of JPH10189912A publication Critical patent/JPH10189912A/ja
Priority to US10/410,293 priority patent/US6861694B2/en
Publication of JPH10189912A5 publication Critical patent/JPH10189912A5/ja
Application granted granted Critical
Publication of JP4056588B2 publication Critical patent/JP4056588B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP18526397A 1996-11-06 1997-07-10 半導体装置及びその製造方法 Expired - Fee Related JP4056588B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP18526397A JP4056588B2 (ja) 1996-11-06 1997-07-10 半導体装置及びその製造方法
US08/965,010 US6576527B2 (en) 1996-11-06 1997-11-05 Semiconductor device and method for fabricating the same
US10/410,293 US6861694B2 (en) 1996-11-06 2003-04-10 Semiconductor device and method for fabricating the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-293593 1996-11-06
JP29359396 1996-11-06
JP18526397A JP4056588B2 (ja) 1996-11-06 1997-07-10 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JPH10189912A JPH10189912A (ja) 1998-07-21
JPH10189912A5 JPH10189912A5 (enExample) 2005-02-10
JP4056588B2 true JP4056588B2 (ja) 2008-03-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP18526397A Expired - Fee Related JP4056588B2 (ja) 1996-11-06 1997-07-10 半導体装置及びその製造方法

Country Status (2)

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US (2) US6576527B2 (enExample)
JP (1) JP4056588B2 (enExample)

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US6312988B1 (en) * 1999-09-02 2001-11-06 Micron Technology, Inc. Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions
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US7008547B2 (en) * 2002-03-14 2006-03-07 Sarnoff Corporation Solid phase sensors
US20030235995A1 (en) * 2002-06-21 2003-12-25 Oluseyi Hakeem M. Method of increasing selectivity to mask when etching tungsten or tungsten nitride
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KR100477828B1 (ko) * 2002-12-30 2005-03-22 주식회사 하이닉스반도체 강유전체 메모리 소자의 제조방법
US7125781B2 (en) * 2003-09-04 2006-10-24 Micron Technology, Inc. Methods of forming capacitor devices
US7067385B2 (en) 2003-09-04 2006-06-27 Micron Technology, Inc. Support for vertically oriented capacitors during the formation of a semiconductor device
JP2006032574A (ja) * 2004-07-14 2006-02-02 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7387939B2 (en) * 2004-07-19 2008-06-17 Micron Technology, Inc. Methods of forming semiconductor structures and capacitor devices
US7126182B2 (en) * 2004-08-13 2006-10-24 Micron Technology, Inc. Memory circuitry
US7202127B2 (en) * 2004-08-27 2007-04-10 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7439152B2 (en) * 2004-08-27 2008-10-21 Micron Technology, Inc. Methods of forming a plurality of capacitors
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US7320911B2 (en) * 2004-12-06 2008-01-22 Micron Technology, Inc. Methods of forming pluralities of capacitors
JP4446179B2 (ja) * 2005-02-02 2010-04-07 エルピーダメモリ株式会社 半導体装置の製造方法
US7557015B2 (en) 2005-03-18 2009-07-07 Micron Technology, Inc. Methods of forming pluralities of capacitors
JP4569924B2 (ja) * 2005-04-08 2010-10-27 エルピーダメモリ株式会社 半導体装置の製造方法
US7517753B2 (en) 2005-05-18 2009-04-14 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7544563B2 (en) * 2005-05-18 2009-06-09 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7282401B2 (en) 2005-07-08 2007-10-16 Micron Technology, Inc. Method and apparatus for a self-aligned recessed access device (RAD) transistor gate
US7199005B2 (en) * 2005-08-02 2007-04-03 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7867851B2 (en) 2005-08-30 2011-01-11 Micron Technology, Inc. Methods of forming field effect transistors on substrates
US7633167B2 (en) 2005-09-29 2009-12-15 Nec Electronics Corporation Semiconductor device and method for manufacturing same
JP4698427B2 (ja) * 2006-01-12 2011-06-08 エルピーダメモリ株式会社 半導体装置の製造方法
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US7602001B2 (en) * 2006-07-17 2009-10-13 Micron Technology, Inc. Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells
US7772632B2 (en) 2006-08-21 2010-08-10 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
US7589995B2 (en) 2006-09-07 2009-09-15 Micron Technology, Inc. One-transistor memory cell with bias gate
US7902081B2 (en) 2006-10-11 2011-03-08 Micron Technology, Inc. Methods of etching polysilicon and methods of forming pluralities of capacitors
JP4545133B2 (ja) * 2006-11-09 2010-09-15 富士通株式会社 半導体記憶装置及びその製造方法
US7785962B2 (en) 2007-02-26 2010-08-31 Micron Technology, Inc. Methods of forming a plurality of capacitors
FR2914781B1 (fr) * 2007-04-03 2009-11-20 Commissariat Energie Atomique Procede de realisation de depots localises
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP4637872B2 (ja) * 2007-06-12 2011-02-23 シャープ株式会社 配線構造およびその製造方法
US7682924B2 (en) 2007-08-13 2010-03-23 Micron Technology, Inc. Methods of forming a plurality of capacitors
JP5613363B2 (ja) * 2007-09-20 2014-10-22 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置及びその製造方法
US7759201B2 (en) * 2007-12-17 2010-07-20 Sandisk 3D Llc Method for fabricating pitch-doubling pillar structures
US8388851B2 (en) 2008-01-08 2013-03-05 Micron Technology, Inc. Capacitor forming methods
US8274777B2 (en) 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
US7981592B2 (en) * 2008-04-11 2011-07-19 Sandisk 3D Llc Double patterning method
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US7786015B2 (en) * 2008-04-28 2010-08-31 Sandisk 3D Llc Method for fabricating self-aligned complementary pillar structures and wiring
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US7732235B2 (en) 2008-06-30 2010-06-08 Sandisk 3D Llc Method for fabricating high density pillar structures by double patterning using positive photoresist
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US7759193B2 (en) 2008-07-09 2010-07-20 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8455298B2 (en) * 2008-08-18 2013-06-04 Contour Semiconductor, Inc. Method for forming self-aligned phase-change semiconductor diode memory
US8076056B2 (en) * 2008-10-06 2011-12-13 Sandisk 3D Llc Method of making sub-resolution pillar structures using undercutting technique
JP2010245374A (ja) * 2009-04-08 2010-10-28 Elpida Memory Inc 半導体装置及びその製造方法
US7923305B1 (en) 2010-01-12 2011-04-12 Sandisk 3D Llc Patterning method for high density pillar structures
US8026178B2 (en) 2010-01-12 2011-09-27 Sandisk 3D Llc Patterning method for high density pillar structures
US8518788B2 (en) 2010-08-11 2013-08-27 Micron Technology, Inc. Methods of forming a plurality of capacitors
KR101742176B1 (ko) * 2011-01-31 2017-05-31 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
US8946043B2 (en) 2011-12-21 2015-02-03 Micron Technology, Inc. Methods of forming capacitors
US8652926B1 (en) 2012-07-26 2014-02-18 Micron Technology, Inc. Methods of forming capacitors
KR102516880B1 (ko) * 2016-07-12 2023-03-31 삼성전자주식회사 반도체 기억 소자
US10636675B2 (en) * 2017-09-27 2020-04-28 Applied Materials, Inc. Methods of etching metal-containing layers
US10957741B2 (en) * 2019-05-01 2021-03-23 Micron Technology, Inc. Multitier arrangements of integrated devices, and methods of forming sense/access lines
WO2021260792A1 (ja) 2020-06-23 2021-12-30 キオクシア株式会社 半導体記憶装置
US11901405B2 (en) 2020-09-11 2024-02-13 Changxin Memory Technologies, Inc. Semiconductor structure and method for manufacturing semiconductor structure
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Also Published As

Publication number Publication date
US20010044181A1 (en) 2001-11-22
US20030178684A1 (en) 2003-09-25
US6576527B2 (en) 2003-06-10
JPH10189912A (ja) 1998-07-21
US6861694B2 (en) 2005-03-01

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