JP4029595B2 - ＳｉＣ半導体装置の製造方法 - Google Patents

ＳｉＣ半導体装置の製造方法 Download PDF

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Publication number
JP4029595B2
JP4029595B2 JP2001317022A JP2001317022A JP4029595B2 JP 4029595 B2 JP4029595 B2 JP 4029595B2 JP 2001317022 A JP2001317022 A JP 2001317022A JP 2001317022 A JP2001317022 A JP 2001317022A JP 4029595 B2 JP4029595 B2 JP 4029595B2
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Prior art keywords
channel layer
oxide film
sic
layer
film
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Expired - Fee Related
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JP2001317022A
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Japanese (ja)
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JP2003124208A (ja
JP2003124208A5 (enExample
Inventor
祥之 久田
英一 奥野
健 長谷川
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Denso Corp
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Denso Corp
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Priority to JP2001317022A priority Critical patent/JP4029595B2/ja
Priority to US10/267,867 priority patent/US6841436B2/en
Publication of JP2003124208A publication Critical patent/JP2003124208A/ja
Priority to US10/961,109 priority patent/US20050064639A1/en
Publication of JP2003124208A5 publication Critical patent/JP2003124208A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP2001317022A 2001-10-15 2001-10-15 ＳｉＣ半導体装置の製造方法 Expired - Fee Related JP4029595B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001317022A JP4029595B2 (ja) 2001-10-15 2001-10-15 ＳｉＣ半導体装置の製造方法
US10/267,867 US6841436B2 (en) 2001-10-15 2002-10-10 Method of fabricating SiC semiconductor device
US10/961,109 US20050064639A1 (en) 2001-10-15 2004-10-12 Method of fabricating SiC semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001317022A JP4029595B2 (ja) 2001-10-15 2001-10-15 ＳｉＣ半導体装置の製造方法

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JP2003124208A JP2003124208A (ja) 2003-04-25
JP2003124208A5 JP2003124208A5 (enExample) 2004-12-24
JP4029595B2 true JP4029595B2 (ja) 2008-01-09

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JP (1) JP4029595B2 (enExample)

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WO2004049449A1 (ja) * 2002-11-25 2004-06-10 National Institute Of Advanced Industrial Science And Technology 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器
US6940110B2 (en) * 2002-11-29 2005-09-06 Matsushita Electric Industrial Co., Ltd. SiC-MISFET and method for fabricating the same
US7723242B2 (en) * 2004-03-15 2010-05-25 Sharp Laboratories Of America, Inc. Enhanced thin-film oxidation process
US8133789B1 (en) 2003-04-11 2012-03-13 Purdue Research Foundation Short-channel silicon carbide power mosfet
FR2871936B1 (fr) * 2004-06-21 2006-10-06 Commissariat Energie Atomique Procede de metallisation de la surface prealablement passivee d'un materiau semi conducteur et materiau obtenu par ce procede
US7723155B2 (en) * 2004-06-30 2010-05-25 Xycarb Ceramics B.V. Method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate
WO2007003576A1 (fr) * 2005-06-30 2007-01-11 Commissariat A L'energie Atomique Nanostructures a resistance differentielle negative et leur procede de fabrication
FR2888398B1 (fr) * 2005-07-05 2007-12-21 Commissariat Energie Atomique Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
JP5033316B2 (ja) * 2005-07-05 2012-09-26 日産自動車株式会社 半導体装置の製造方法
FR2888399B1 (fr) * 2005-07-05 2008-03-14 Commissariat Energie Atomique Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche
US7253481B2 (en) * 2005-07-14 2007-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. High performance MOS device with graded silicide
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CA2636776A1 (en) * 2006-01-30 2007-08-02 Sumitomo Electric Industries, Ltd. Method of manufacturing silicon carbide semiconductor device
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US7569896B2 (en) * 2006-05-22 2009-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Transistors with stressed channels
US7364957B2 (en) * 2006-07-20 2008-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for semiconductor device with improved source/drain junctions
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JP4046140B1 (ja) * 2006-11-29 2008-02-13 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5283147B2 (ja) * 2006-12-08 2013-09-04 国立大学法人東北大学 半導体装置および半導体装置の製造方法
JP5303839B2 (ja) * 2007-01-29 2013-10-02 富士電機株式会社 絶縁ゲート炭化珪素半導体装置とその製造方法
JP2008244456A (ja) * 2007-02-28 2008-10-09 Denso Corp 炭化珪素半導体装置およびその製造方法
JP5519901B2 (ja) * 2007-07-04 2014-06-11 三菱電機株式会社 炭化珪素電界効果型トランジスタ及びその製造方法
US8035112B1 (en) * 2008-04-23 2011-10-11 Purdue Research Foundation SIC power DMOSFET with self-aligned source contact
JP5266996B2 (ja) * 2008-09-12 2013-08-21 住友電気工業株式会社 半導体装置の製造方法および半導体装置
US20100123140A1 (en) * 2008-11-20 2010-05-20 General Electric Company SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHODS FOR THEIR MANUFACTURE
JP5852863B2 (ja) * 2011-11-28 2016-02-03 株式会社日立製作所 ４ｈ−ＳｉＣ半導体素子及び半導体装置
JP5757223B2 (ja) * 2011-12-02 2015-07-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
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JP6099981B2 (ja) * 2013-01-09 2017-03-22 株式会社東芝 半導体装置
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US9024328B2 (en) 2013-07-02 2015-05-05 General Electric Company Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture
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JP6776204B2 (ja) * 2017-08-25 2020-10-28 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
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CN113451119A (zh) * 2020-03-25 2021-09-28 和舰芯片制造(苏州)股份有限公司 一种改善栅极氧化层均匀度的方法
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CN112967930B (zh) * 2021-02-07 2023-05-12 西安微电子技术研究所 一种SiC晶圆的金属化层剥离方法
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US20030073270A1 (en) 2003-04-17
US6841436B2 (en) 2005-01-11
JP2003124208A (ja) 2003-04-25
US20050064639A1 (en) 2005-03-24

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