FR2801723B1 - Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche - Google Patents

Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche

Info

Publication number
FR2801723B1
FR2801723B1 FR9914846A FR9914846A FR2801723B1 FR 2801723 B1 FR2801723 B1 FR 2801723B1 FR 9914846 A FR9914846 A FR 9914846A FR 9914846 A FR9914846 A FR 9914846A FR 2801723 B1 FR2801723 B1 FR 2801723B1
Authority
FR
France
Prior art keywords
layer
obtaining
highly oxygen
sensitive silicon
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9914846A
Other languages
English (en)
Other versions
FR2801723A1 (fr
Inventor
Fabrice Amy
Christian Brylinski
Gerald Dujardin
Hanna Enriquez
Andrew Mayne
Patrick Soukiassian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9914846A priority Critical patent/FR2801723B1/fr
Priority to EP00985333A priority patent/EP1232521A2/fr
Priority to PCT/FR2000/003304 priority patent/WO2001039257A2/fr
Priority to JP2001540827A priority patent/JP4880156B2/ja
Priority to US10/130,269 priority patent/US6667102B1/en
Priority to CA002392445A priority patent/CA2392445C/fr
Publication of FR2801723A1 publication Critical patent/FR2801723A1/fr
Application granted granted Critical
Publication of FR2801723B1 publication Critical patent/FR2801723B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
FR9914846A 1999-11-25 1999-11-25 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche Expired - Fee Related FR2801723B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9914846A FR2801723B1 (fr) 1999-11-25 1999-11-25 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
EP00985333A EP1232521A2 (fr) 1999-11-25 2000-11-27 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
PCT/FR2000/003304 WO2001039257A2 (fr) 1999-11-25 2000-11-27 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
JP2001540827A JP4880156B2 (ja) 1999-11-25 2000-11-27 高酸素感受性シリコン層及びその製造方法
US10/130,269 US6667102B1 (en) 1999-11-25 2000-11-27 Silicon layer highly sensitive to oxygen and method for obtaining same
CA002392445A CA2392445C (fr) 1999-11-25 2000-11-27 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9914846A FR2801723B1 (fr) 1999-11-25 1999-11-25 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche

Publications (2)

Publication Number Publication Date
FR2801723A1 FR2801723A1 (fr) 2001-06-01
FR2801723B1 true FR2801723B1 (fr) 2003-09-05

Family

ID=9552537

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9914846A Expired - Fee Related FR2801723B1 (fr) 1999-11-25 1999-11-25 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche

Country Status (6)

Country Link
US (1) US6667102B1 (fr)
EP (1) EP1232521A2 (fr)
JP (1) JP4880156B2 (fr)
CA (1) CA2392445C (fr)
FR (1) FR2801723B1 (fr)
WO (1) WO2001039257A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2823770B1 (fr) 2001-04-19 2004-05-21 Commissariat Energie Atomique Procede de traitement de la surface d'un materiau semiconducteur, utilisant notamment l'hydrogene, et surface obtenue par ce procede
FR2823739B1 (fr) * 2001-04-19 2003-05-16 Commissariat Energie Atomique Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede
JP4029595B2 (ja) * 2001-10-15 2008-01-09 株式会社デンソー ＳｉＣ半導体装置の製造方法
FR2841892B1 (fr) * 2002-07-05 2005-05-06 Commissariat Energie Atomique Nano-objets metalliques, formes sur des surfaces de carbure de silicium, et procede de fabrication de ces nano-objets
FR2871936B1 (fr) * 2004-06-21 2006-10-06 Commissariat Energie Atomique Procede de metallisation de la surface prealablement passivee d'un materiau semi conducteur et materiau obtenu par ce procede
JP2006216918A (ja) * 2005-02-07 2006-08-17 Kyoto Univ 半導体素子の製造方法
WO2007003576A1 (fr) * 2005-06-30 2007-01-11 Commissariat A L'energie Atomique Nanostructures a resistance differentielle negative et leur procede de fabrication
FR2888398B1 (fr) * 2005-07-05 2007-12-21 Commissariat Energie Atomique Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
FR2888399B1 (fr) * 2005-07-05 2008-03-14 Commissariat Energie Atomique Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche
JP5141227B2 (ja) * 2007-12-12 2013-02-13 住友電気工業株式会社 半導体装置の製造方法
GB2483702A (en) * 2010-09-17 2012-03-21 Ge Aviat Systems Ltd Method for the manufacture of a Silicon Carbide, Silicon Oxide interface having reduced interfacial carbon gettering
JP2013008894A (ja) * 2011-06-27 2013-01-10 Saitama Univ 炭化珪素半導体を用いたｍｏｓ構造およびその酸化膜形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066866A (ja) * 1983-09-24 1985-04-17 Sharp Corp 炭化珪素ｍｏｓ構造の製造方法
US5459107A (en) * 1992-06-05 1995-10-17 Cree Research, Inc. Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures
JPH07172997A (ja) * 1993-12-16 1995-07-11 Matsushita Electric Ind Co Ltd 炭化珪素薄膜の製造方法及び製造装置
WO1997039476A1 (fr) * 1996-04-18 1997-10-23 Matsushita Electric Industrial Co., Ltd. ELEMENT EN SiC ET SON PROCEDE DE PRODUCTION
FR2757183B1 (fr) 1996-12-16 1999-02-05 Commissariat Energie Atomique Fils atomiques de grande longueur et de grande stabilite, procede de fabrication de ces fils, application en nano-electronique
JP3143670B2 (ja) * 1997-08-13 2001-03-07 工業技術院長 酸化薄膜形成方法

Also Published As

Publication number Publication date
JP2003515517A (ja) 2003-05-07
WO2001039257A3 (fr) 2001-12-13
EP1232521A2 (fr) 2002-08-21
WO2001039257A2 (fr) 2001-05-31
CA2392445A1 (fr) 2001-05-31
US6667102B1 (en) 2003-12-23
JP4880156B2 (ja) 2012-02-22
FR2801723A1 (fr) 2001-06-01
CA2392445C (fr) 2009-06-02

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CD Change of name or company name
ST Notification of lapse

Effective date: 20140731