FR2888398B1 - Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche - Google Patents

Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche

Info

Publication number
FR2888398B1
FR2888398B1 FR0552059A FR0552059A FR2888398B1 FR 2888398 B1 FR2888398 B1 FR 2888398B1 FR 0552059 A FR0552059 A FR 0552059A FR 0552059 A FR0552059 A FR 0552059A FR 2888398 B1 FR2888398 B1 FR 2888398B1
Authority
FR
France
Prior art keywords
layer
obtaining
highly oxygen
sensitive silicon
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0552059A
Other languages
English (en)
Other versions
FR2888398A1 (fr
Inventor
Patrick Soukiassian
Fabrice Semond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite Paris Sud Paris 11
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Universite Paris Sud Paris 11
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Universite Paris Sud Paris 11 filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0552059A priority Critical patent/FR2888398B1/fr
Priority to JP2008519928A priority patent/JP2008544945A/ja
Priority to PCT/EP2006/063856 priority patent/WO2007003638A1/fr
Priority to EP06764054A priority patent/EP1900012A1/fr
Priority to US11/988,343 priority patent/US20090294776A1/en
Publication of FR2888398A1 publication Critical patent/FR2888398A1/fr
Application granted granted Critical
Publication of FR2888398B1 publication Critical patent/FR2888398B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28229—Making the insulator by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
FR0552059A 2005-07-05 2005-07-05 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche Expired - Fee Related FR2888398B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0552059A FR2888398B1 (fr) 2005-07-05 2005-07-05 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
JP2008519928A JP2008544945A (ja) 2005-07-05 2006-07-04 酸素感受性の高いケイ素層及び該ケイ素層を得るための方法
PCT/EP2006/063856 WO2007003638A1 (fr) 2005-07-05 2006-07-04 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
EP06764054A EP1900012A1 (fr) 2005-07-05 2006-07-04 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
US11/988,343 US20090294776A1 (en) 2005-07-05 2006-07-04 Highly Oxygen-Sensitive Silicon Layer and Method for Obtaining Same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0552059A FR2888398B1 (fr) 2005-07-05 2005-07-05 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche

Publications (2)

Publication Number Publication Date
FR2888398A1 FR2888398A1 (fr) 2007-01-12
FR2888398B1 true FR2888398B1 (fr) 2007-12-21

Family

ID=36123124

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0552059A Expired - Fee Related FR2888398B1 (fr) 2005-07-05 2005-07-05 Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche

Country Status (5)

Country Link
US (1) US20090294776A1 (fr)
EP (1) EP1900012A1 (fr)
JP (1) JP2008544945A (fr)
FR (1) FR2888398B1 (fr)
WO (1) WO2007003638A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2483702A (en) * 2010-09-17 2012-03-21 Ge Aviat Systems Ltd Method for the manufacture of a Silicon Carbide, Silicon Oxide interface having reduced interfacial carbon gettering
FR2974236A1 (fr) * 2011-04-15 2012-10-19 St Microelectronics Sa Procede de fabrication d'un transistor mos sur sige
US9263275B2 (en) 2013-03-12 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9105578B2 (en) * 2013-03-12 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
JP2018158858A (ja) * 2017-03-22 2018-10-11 日本電信電話株式会社 結晶成長方法および装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998862A (en) * 1973-07-16 1976-12-21 Rohm And Haas Company Alkyl ammonium carboxylite salt-ethoxylated alkyl phenol esters
US4735921A (en) * 1987-05-29 1988-04-05 Patrick Soukiassian Nitridation of silicon and other semiconductors using alkali metal catalysts
JP2534525B2 (ja) * 1987-12-19 1996-09-18 富士通株式会社 β−炭化シリコン層の製造方法
US4900710A (en) * 1988-11-03 1990-02-13 E. I. Dupont De Nemours And Company Process of depositing an alkali metal layer onto the surface of an oxide superconductor
EP0845803A4 (fr) * 1996-04-18 2002-03-27 Matsushita Electric Ind Co Ltd ELEMENT EN SiC ET SON PROCEDE DE PRODUCTION
FR2757183B1 (fr) * 1996-12-16 1999-02-05 Commissariat Energie Atomique Fils atomiques de grande longueur et de grande stabilite, procede de fabrication de ces fils, application en nano-electronique
FR2801723B1 (fr) * 1999-11-25 2003-09-05 Commissariat Energie Atomique Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
WO2002052652A1 (fr) * 2000-12-26 2002-07-04 Matsushita Electric Industrial Co., Ltd. Composant a semi-conducteur et son procede de fabrication
US20020088970A1 (en) * 2001-01-05 2002-07-11 Motorola, Inc. Self-assembled quantum structures and method for fabricating same
FR2823770B1 (fr) * 2001-04-19 2004-05-21 Commissariat Energie Atomique Procede de traitement de la surface d'un materiau semiconducteur, utilisant notamment l'hydrogene, et surface obtenue par ce procede
JP4029595B2 (ja) * 2001-10-15 2008-01-09 株式会社デンソー ＳｉＣ半導体装置の製造方法
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures

Also Published As

Publication number Publication date
EP1900012A1 (fr) 2008-03-19
FR2888398A1 (fr) 2007-01-12
JP2008544945A (ja) 2008-12-11
WO2007003638A1 (fr) 2007-01-11
US20090294776A1 (en) 2009-12-03

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20120330