CN112967930B - 一种SiC晶圆的金属化层剥离方法 - Google Patents
一种SiC晶圆的金属化层剥离方法 Download PDFInfo
- Publication number
- CN112967930B CN112967930B CN202110169376.5A CN202110169376A CN112967930B CN 112967930 B CN112967930 B CN 112967930B CN 202110169376 A CN202110169376 A CN 202110169376A CN 112967930 B CN112967930 B CN 112967930B
- Authority
- CN
- China
- Prior art keywords
- sic wafer
- layer
- solution
- metallized layer
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000001465 metallisation Methods 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 60
- 239000007788 liquid Substances 0.000 claims description 10
- 229910018540 Si C Inorganic materials 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 45
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本发明提供一种SiC晶圆的金属化层剥离方法,先采用腐蚀或刻蚀的方法,将已报废SiC晶圆上表面和下表面的金属层去除,SiC晶圆上表面的金属化层和下表面的金属化层裸露出来;再对SiC晶圆上表面的金属化层和下表面的金属化层在1100℃~1400℃下进行氧化处理,所述的金属化层最外侧的一部分厚度形成氧化层,之后去除该氧化层;最后重复步骤2若干次,直至SiC晶圆上表面的金属化层和下表面的金属化层去净为止,完成SiC晶圆的金属化层剥离,有效解决目前SiC器件在金属化层加工不理想时,SiC晶圆报废的问题。
Description
技术领域
本发明属于功率器件制作工艺技术领域,具体为一种SiC晶圆的金属化层剥离方法。
背景技术
碳化硅(SiC)是一种二元半导体化合物,是元素周期表第IV主族元素中唯一的固态化合物,也是Si和C的唯一稳定化合物,其物化性质有许多独特之处。在SiC结晶时,每一个碳原子都被4个硅原子按照正四面体结构紧密包围,同样每一个硅原子也都被4个碳原子以相同方式紧密包围,彼此相互嵌套而构成完整晶体。最近邻原子距离为0.189nm,所以SiC原子层面的粗糙度大约为0.2nm。碳化硅晶体在结晶构架过程中都符合密堆积原则,SiC硬度高,仅次于金刚石,而且SiC具有很强的离子共价键,所以其结构非常稳定。由于特殊的结构,SiC具有禁带宽度大、临界击穿场强高、耐高温、抗辐照、热导率高、饱和电子漂移速度快等诸多优点,所以具备制作功率器件的天然优势。
金属与SiC的接触类型分为肖特基接触和欧姆接触。肖特基接触是制备肖特基二极管的关键步骤,是形成肖特基器件性能的主要过程,肖特基接触的好坏直接影响器件的性能,若肖特基接触工艺加工失败,直接会导致SiC晶圆的报废。欧姆接触扮演着信号转换桥梁的作用,接触电阻越小,因接触电阻带来的额外功耗就越小,系统的效率便越高。
高性能的SiC器件往往要求更低的欧姆接触电阻,但是在目前的工艺加工过程中,SiC晶圆的欧姆接触电阻往往比较大,这导致了SiC晶圆的报废,而且也增加成本。
发明内容
针对现有技术中存在的问题,本发明提供一种SiC晶圆的金属化层剥离方法,有效解决目前SiC器件在金属化层加工不理想时,SiC晶圆报废的问题。
为达到上述目的,本发明采用以下技术方案予以实现:
一种SiC晶圆的金属化层剥离方法,包括以下步骤:
步骤1,采用腐蚀或刻蚀的方法,将已报废SiC晶圆上表面和下表面的金属层去除,SiC晶圆上表面的金属化层和下表面的金属化层裸露出来;
步骤2,先对SiC晶圆上表面的金属化层和下表面的金属化层在1100℃~1400℃下进行氧化处理,所述的金属化层最外侧的一部分厚度形成氧化层,再去除该氧化层;
步骤3,重复步骤2若干次,直至SiC晶圆上表面的金属化层和下表面的金属化层去净为止,完成SiC晶圆的金属化层剥离。
优选的,当步骤1采用腐蚀的方法去除所述的金属层时,使用HF溶液、BOE、H2SO4溶液、HNO3溶液、HCl溶液、H2O2溶液,由H2SO4溶液和H2O2溶液混合而成的第一腐蚀液,或者由HCl溶液和HNO3溶液混合而成的第二腐蚀液。
进一步,HF溶液的体积百分比8%~12%; H2SO4溶液的质量分数为95%~98%;HNO3溶液的质量分数为60%~68%;HCl溶液的质量分数为32%~37%;H2O2溶液的体积百分比为20%~30%。
再进一步,第一腐蚀液中H2SO4和H2O2的体积比为3:1;第二腐蚀液中HCl和HNO3的体积比为3:1。
优选的,步骤2中SiC晶圆上表面的金属化层和下表面的金属化层在所述温度下氧化5min~2h。
优选的,步骤2中所述氧化层的厚度为10nm~500nm。
优选的,步骤2先采用步骤1所述的腐蚀或刻蚀的方法去掉绝大部分的氧化层,之后剩余的氧化层残渣分布在金属化层表面,再依次研磨、抛光去除剩余的氧化层残渣。
优选的,步骤3在重复步骤2若干次后对所得结构的上表面和下表面进行电阻测量,当电阻值达到SiC晶圆金属化之前的电阻值时,完成SiC晶圆的金属化层剥离。
优选的,步骤3中重复步骤2的次数为3~5次。
与现有技术相比,本发明具有以下有益效果:
本发明一种SiC晶圆的金属化层剥离方法,可以先采用腐蚀或刻蚀的方法,将已报废SiC晶圆上表面和下表面的金属层去除,这样SiC晶圆上表面的金属化层和下表面的金属化层便可以裸露出来,由于金属化层比较难去除,因此需要在1100℃~1400℃下进行氧化处理,这样金属化层最外侧的一部分厚度可形成氧化层,再去除该氧化层,重复若干次,直至SiC晶圆上表面的金属化层和下表面的金属化层去净为止,最后去除SiC晶圆上表面和下表面的金属化层,为金属化不理想的SiC晶圆提供返工的方法,降低成本;该工艺方法理论简单易于理解,不同的工艺技术人员可以根据不同的设备及工艺条件进行调整,遵循此方法均可以得到满足工艺要求的结果,适用范围广泛。
附图说明
图1为本发明所述方法的流程图。
图中:1-SiC晶圆,2-金属层,3-全部的金属化层,4-氧化层,5-剩余的金属化层。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述;以下实施例仅仅是本发明一部分的实施例,而不是全部的实施例,不用来限制本发明的范围。
肖特基接触形成的金属化层成分有Ni-Si-C系统、Ti-Si-C系统;欧姆接触形成的金属化层成分有Ni-Si-C系统、Al-Si-C系统、Al-W-Si-C系统等,在去除金属化层时需将这些SiC金属化物均去除。
因此,对于欧姆接触形成的金属化层,本发明一种SiC晶圆的金属化层剥离方法,包括以下步骤:
1)采用腐蚀或刻蚀的方法,将已报废SiC晶圆上下表面的厚度为50nm~3000nm的金属层,SiC晶圆上下表面的金属化层裸露出来,腐蚀采用腐蚀液的方式进行,腐蚀液为体积百分比为8%~12%的HF溶液、BOE、质量分数为95%~98%的H2SO4溶液、质量分数为60%~68%的HNO3溶液、质量分数为32%~37%的HCl溶液、体积百分比为20%~30%的H2O2溶液,或者由H2SO4溶液和H2O2溶液混合而成的腐蚀液,HCl溶液和HNO3溶液混合而成的腐蚀液,BOE为缓冲氧化物刻蚀液;
当使用H2SO4溶液和H2O2溶液混合而成的腐蚀液时,腐蚀液中H2SO4和H2O2的体积比为3:1,当使用HCl溶液和HNO3溶液混合而成的腐蚀液时,腐蚀液中HCl和HNO3的体积比为3:1。
2)对已去掉金属层的SiC晶圆上表面的金属化层和下表面的金属化层进行高温氧化,氧化温度为1100℃~1400℃,氧化时间为5min~2h,金属化层最外侧的一部分厚度形成氧化层,形成厚度为10nm~500nm的氧化层,采用步骤1)中所述腐蚀或刻蚀的方法去掉SiC晶圆表面的绝大部分的氧化层,之后剩余的氧化层残渣分布在金属化层表面,通过这种方式减薄SiC晶圆的金属化层;
3)通过依次研磨、抛光的方式去除剩余的氧化层残渣;
4)重复步骤2和步骤3若干次,分步骤地去除剩余的金属化层,直至SiC晶圆上表面的金属化层和下表面的金属化层去净为止,最终需要进行表面电阻测量,使晶圆表面电阻值达到金属化之前的电阻值。若未达到,则重复步骤2、步骤3直到去净金属化层,晶圆表面电阻值达到金属化之前的电阻值为止,一般3~5次即可去除完全。
实施例
本发明一种SiC晶圆的金属化层剥离方法,如图1所示,包括以下步骤:
1)采用体积百分比为10%的HF溶液、质量分数为37%的HCl溶液或质量分数为98%的H2SO4溶液腐蚀的方法,去掉SiC晶圆1上下表面厚度为200nm的金属层2,SiC晶圆上下表面的全部的金属化层3裸露出来;
2)对SiC晶圆上表面的金属化层和下表面的金属化层在1300℃下氧化30min,金属化层最外侧的一部分厚度形成氧化层,形成厚度为100nm的氧化层4;
3)采用体积百分比为10%的HF溶液腐蚀的方法,去掉SiC晶圆表面的绝大部分的氧化层,之后剩余的氧化层残渣分布在金属化层表面;
4)通过依次研磨、抛光的方法去掉剩余的氧化层残渣;
5)重复步骤2、步骤3和步骤4四次,这样分步骤地去除剩余的金属化层5,去掉剩余的金属化层5后进行SiC晶圆表面电阻测量,检测表面电阻是否达到金属化之前的电阻值,此时已达到,完成金属化层的去除。
Claims (2)
1.一种SiC晶圆的金属化层剥离方法,其特征在于,所述金属化层成分有Ni-Si-C系统、Ti-Si-C系统、Al-Si-C系统和Al-W-Si-C系统,包括以下步骤:
步骤1,采用腐蚀或刻蚀的方法,将已报废SiC晶圆上表面和下表面的金属层去除,SiC晶圆上表面的金属化层和下表面的金属化层裸露出来;
采用腐蚀的方法去除所述金属层时,使用体积百分比8%~12%的HF溶液、BOE、质量分数为95%~98%的H2SO4溶液、质量分数为60%~68%的HNO3溶液、质量分数为32%~37%的HCl溶液、体积百分比为20%~30%的H2O2溶液,由体积比为3:1的H2SO4溶液和H2O2溶液混合而成的第一腐蚀液,或者由体积比为3:1的HCl溶液和HNO3溶液混合而成的第二腐蚀液;
步骤2,先对SiC晶圆上表面的金属化层和下表面的金属化层在1100℃~1400℃下氧化5min~2h,所述金属化层最外侧形成厚度为10nm~500nm的氧化层,先采用步骤1所述的腐蚀或刻蚀的方法去掉绝大部分的氧化层,之后剩余的氧化层残渣分布在金属化层表面,再依次研磨、抛光去除剩余的氧化层残渣;
步骤3,重复步骤2若干次,对所得结构的上表面和下表面进行电阻测量,当电阻值达到SiC晶圆金属化之前的电阻值时,完成SiC晶圆的金属化层剥离。
2.根据权利要求1所述的SiC晶圆的金属化层剥离方法,其特征在于,步骤3中重复步骤2的次数为3~5次。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110169376.5A CN112967930B (zh) | 2021-02-07 | 2021-02-07 | 一种SiC晶圆的金属化层剥离方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110169376.5A CN112967930B (zh) | 2021-02-07 | 2021-02-07 | 一种SiC晶圆的金属化层剥离方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112967930A CN112967930A (zh) | 2021-06-15 |
CN112967930B true CN112967930B (zh) | 2023-05-12 |
Family
ID=76275214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110169376.5A Active CN112967930B (zh) | 2021-02-07 | 2021-02-07 | 一种SiC晶圆的金属化层剥离方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112967930B (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6406923B1 (en) * | 2000-07-31 | 2002-06-18 | Kobe Precision Inc. | Process for reclaiming wafer substrates |
US6451696B1 (en) * | 1998-08-28 | 2002-09-17 | Kabushiki Kaisha Kobe Seiko Sho | Method for reclaiming wafer substrate and polishing solution compositions therefor |
CN1757106A (zh) * | 2003-01-07 | 2006-04-05 | S.O.I.Tec绝缘体上硅技术公司 | 在剥离薄层之后重复利用包含多层结构的晶片 |
WO2008157345A2 (en) * | 2007-06-13 | 2008-12-24 | Advanced Technology Materials, Inc. | Wafer reclamation compositions and methods |
CN102217042A (zh) * | 2008-10-02 | 2011-10-12 | 高级技术材料公司 | 表面活性剂/消泡剂混合物用于增强硅基板的金属负载及表面钝化的应用 |
CN103904001A (zh) * | 2014-03-20 | 2014-07-02 | 上海华力微电子有限公司 | 一种用于氮掺杂碳化硅薄膜的离线监控方法 |
CN105655313A (zh) * | 2014-11-28 | 2016-06-08 | 英飞凌科技股份有限公司 | 半导体器件、功率半导体器件及加工半导体器件的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4029595B2 (ja) * | 2001-10-15 | 2008-01-09 | 株式会社デンソー | SiC半導体装置の製造方法 |
FR2871936B1 (fr) * | 2004-06-21 | 2006-10-06 | Commissariat Energie Atomique | Procede de metallisation de la surface prealablement passivee d'un materiau semi conducteur et materiau obtenu par ce procede |
US10510527B2 (en) * | 2013-02-01 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Single wafer cleaning tool with H2SO4 recycling |
-
2021
- 2021-02-07 CN CN202110169376.5A patent/CN112967930B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6451696B1 (en) * | 1998-08-28 | 2002-09-17 | Kabushiki Kaisha Kobe Seiko Sho | Method for reclaiming wafer substrate and polishing solution compositions therefor |
US6406923B1 (en) * | 2000-07-31 | 2002-06-18 | Kobe Precision Inc. | Process for reclaiming wafer substrates |
CN1757106A (zh) * | 2003-01-07 | 2006-04-05 | S.O.I.Tec绝缘体上硅技术公司 | 在剥离薄层之后重复利用包含多层结构的晶片 |
WO2008157345A2 (en) * | 2007-06-13 | 2008-12-24 | Advanced Technology Materials, Inc. | Wafer reclamation compositions and methods |
CN102217042A (zh) * | 2008-10-02 | 2011-10-12 | 高级技术材料公司 | 表面活性剂/消泡剂混合物用于增强硅基板的金属负载及表面钝化的应用 |
CN103904001A (zh) * | 2014-03-20 | 2014-07-02 | 上海华力微电子有限公司 | 一种用于氮掺杂碳化硅薄膜的离线监控方法 |
CN105655313A (zh) * | 2014-11-28 | 2016-06-08 | 英飞凌科技股份有限公司 | 半导体器件、功率半导体器件及加工半导体器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN112967930A (zh) | 2021-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103137476B (zh) | 具有钝化以及栅极电介质多层结构的GaN高压HFET | |
CN1291349A (zh) | 单晶膜的晶体离子切割 | |
KR20010007482A (ko) | 반도체의 구리 상호 연결 배선 패시베이팅 방법 | |
JP6511516B2 (ja) | ゲルマニウム・オン・インシュレータ基板の製造方法 | |
CN111223756B (zh) | 晶圆清洗方法及半导体器件制作方法 | |
CN105355620B (zh) | 一种铜互连结构及其制造方法 | |
CN110491932A (zh) | 氮化镓肖特基二极管及其制作方法 | |
JP2010045204A (ja) | 半導体基板、半導体装置およびその製造方法 | |
CN113399341A (zh) | 一种SiC外延晶圆片的洗净再生方法 | |
CN112967930B (zh) | 一种SiC晶圆的金属化层剥离方法 | |
CN110079859A (zh) | 一种SiC基GaN外延片的剥离方法 | |
CN109494150B (zh) | 碳化硅高温退火表面保护的制作方法及碳化硅功率器件 | |
CN100372128C (zh) | 一种锗硅肖特基二极管及其制作方法 | |
US7129184B2 (en) | Method of depositing an epitaxial layer of SiGe subsequent to a plasma etch | |
US9390942B2 (en) | Method, system, and apparatus for preparing substrates and bonding semiconductor layers to substrates | |
JP4575745B2 (ja) | GaN系半導体層に上部層が積層されている半導体装置の製造方法 | |
CN108666209B (zh) | 一种半导体衬底的制作方法 | |
CN111584353A (zh) | 碳化硅晶圆减薄方法 | |
CN1610078A (zh) | 消除晶片边缘剥离的方法 | |
CN101807527A (zh) | 一种SiC MESFET栅极制作方法 | |
CN111128688B (zh) | n型氮化镓自支撑衬底的制作方法 | |
US11837683B2 (en) | Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiency | |
US20030098767A1 (en) | Process for fabricating an electronic component incorporating an inductive microcomponent | |
WO2010016956A1 (en) | Crystalline silicon substrates with improved minority carrier lifetime | |
CN112151355B (zh) | 氮化镓自支撑衬底的制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |