JP3923462B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP3923462B2
JP3923462B2 JP2003344202A JP2003344202A JP3923462B2 JP 3923462 B2 JP3923462 B2 JP 3923462B2 JP 2003344202 A JP2003344202 A JP 2003344202A JP 2003344202 A JP2003344202 A JP 2003344202A JP 3923462 B2 JP3923462 B2 JP 3923462B2
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JP
Japan
Prior art keywords
light
electrode
wiring
film
region
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Expired - Fee Related
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JP2003344202A
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English (en)
Japanese (ja)
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JP2005109390A5 (https=
JP2005109390A (ja
Inventor
理 中村
清文 荻野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003344202A priority Critical patent/JP3923462B2/ja
Priority to US10/946,649 priority patent/US7332432B2/en
Publication of JP2005109390A publication Critical patent/JP2005109390A/ja
Publication of JP2005109390A5 publication Critical patent/JP2005109390A5/ja
Application granted granted Critical
Publication of JP3923462B2 publication Critical patent/JP3923462B2/ja
Priority to US11/970,318 priority patent/US7534724B2/en
Priority to US12/432,503 priority patent/US7919411B2/en
Priority to US13/034,771 priority patent/US8105945B2/en
Priority to US13/334,757 priority patent/US20120094412A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0814—Several active elements per pixel in active matrix panels used for selection purposes, e.g. logical AND for partial update
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Catalysts (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003344202A 2003-10-02 2003-10-02 薄膜トランジスタの作製方法 Expired - Fee Related JP3923462B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003344202A JP3923462B2 (ja) 2003-10-02 2003-10-02 薄膜トランジスタの作製方法
US10/946,649 US7332432B2 (en) 2003-10-02 2004-09-22 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same
US11/970,318 US7534724B2 (en) 2003-10-02 2008-01-07 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same
US12/432,503 US7919411B2 (en) 2003-10-02 2009-04-29 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same
US13/034,771 US8105945B2 (en) 2003-10-02 2011-02-25 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same
US13/334,757 US20120094412A1 (en) 2003-10-02 2011-12-22 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003344202A JP3923462B2 (ja) 2003-10-02 2003-10-02 薄膜トランジスタの作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005182123A Division JP4081580B2 (ja) 2005-06-22 2005-06-22 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005109390A JP2005109390A (ja) 2005-04-21
JP2005109390A5 JP2005109390A5 (https=) 2005-09-22
JP3923462B2 true JP3923462B2 (ja) 2007-05-30

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Family Applications (1)

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JP2003344202A Expired - Fee Related JP3923462B2 (ja) 2003-10-02 2003-10-02 薄膜トランジスタの作製方法

Country Status (2)

Country Link
US (5) US7332432B2 (https=)
JP (1) JP3923462B2 (https=)

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KR101037030B1 (ko) * 2004-11-23 2011-05-25 삼성전자주식회사 금속 나노 결정을 이용한 금속패턴 형성 방법

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US20080176347A1 (en) 2008-07-24
US20110143469A1 (en) 2011-06-16
US20090258450A1 (en) 2009-10-15
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