JP2005109390A5 - - Google Patents
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- Publication number
- JP2005109390A5 JP2005109390A5 JP2003344202A JP2003344202A JP2005109390A5 JP 2005109390 A5 JP2005109390 A5 JP 2005109390A5 JP 2003344202 A JP2003344202 A JP 2003344202A JP 2003344202 A JP2003344202 A JP 2003344202A JP 2005109390 A5 JP2005109390 A5 JP 2005109390A5
- Authority
- JP
- Japan
- Prior art keywords
- substance
- photocatalytic function
- semiconductor film
- forming
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010408 film Substances 0.000 claims 90
- 230000001699 photocatalysis Effects 0.000 claims 64
- 239000000126 substance Substances 0.000 claims 61
- 239000004065 semiconductor Substances 0.000 claims 60
- 239000000203 mixture Substances 0.000 claims 49
- 238000004519 manufacturing process Methods 0.000 claims 42
- 238000000034 method Methods 0.000 claims 39
- 239000002904 solvent Substances 0.000 claims 35
- 238000007599 discharging Methods 0.000 claims 34
- 239000004020 conductor Substances 0.000 claims 33
- 239000010409 thin film Substances 0.000 claims 23
- 230000001678 irradiating effect Effects 0.000 claims 10
- 230000002940 repellent Effects 0.000 claims 10
- 239000005871 repellent Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 9
- 239000003125 aqueous solvent Substances 0.000 claims 8
- 239000012212 insulator Substances 0.000 claims 8
- 238000000059 patterning Methods 0.000 claims 8
- 230000001681 protective effect Effects 0.000 claims 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 238000009751 slip forming Methods 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 239000011135 tin Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 claims 1
- 239000004914 cyclooctane Substances 0.000 claims 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910052500 inorganic mineral Inorganic materials 0.000 claims 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 claims 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 claims 1
- 239000011707 mineral Substances 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 claims 1
- 239000012454 non-polar solvent Substances 0.000 claims 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims 1
- 239000004094 surface-active agent Substances 0.000 claims 1
- 229940116411 terpineol Drugs 0.000 claims 1
- 239000008096 xylene Substances 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003344202A JP3923462B2 (ja) | 2003-10-02 | 2003-10-02 | 薄膜トランジスタの作製方法 |
| US10/946,649 US7332432B2 (en) | 2003-10-02 | 2004-09-22 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
| US11/970,318 US7534724B2 (en) | 2003-10-02 | 2008-01-07 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
| US12/432,503 US7919411B2 (en) | 2003-10-02 | 2009-04-29 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
| US13/034,771 US8105945B2 (en) | 2003-10-02 | 2011-02-25 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
| US13/334,757 US20120094412A1 (en) | 2003-10-02 | 2011-12-22 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003344202A JP3923462B2 (ja) | 2003-10-02 | 2003-10-02 | 薄膜トランジスタの作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005182123A Division JP4081580B2 (ja) | 2005-06-22 | 2005-06-22 | 表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005109390A JP2005109390A (ja) | 2005-04-21 |
| JP2005109390A5 true JP2005109390A5 (https=) | 2005-09-22 |
| JP3923462B2 JP3923462B2 (ja) | 2007-05-30 |
Family
ID=34537918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003344202A Expired - Fee Related JP3923462B2 (ja) | 2003-10-02 | 2003-10-02 | 薄膜トランジスタの作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (5) | US7332432B2 (https=) |
| JP (1) | JP3923462B2 (https=) |
Families Citing this family (74)
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| DE10251463A1 (de) * | 2002-11-05 | 2004-05-19 | BSH Bosch und Siemens Hausgeräte GmbH | Elektrisch angetriebene Pumpe |
| JP2004288898A (ja) * | 2003-03-24 | 2004-10-14 | Canon Inc | 太陽電池モジュールの製造方法 |
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| US7601994B2 (en) | 2003-11-14 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US7592207B2 (en) | 2003-11-14 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2005048222A1 (en) * | 2003-11-14 | 2005-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting display device, method for manufacturing the same, and tv set |
| KR101030056B1 (ko) | 2003-11-14 | 2011-04-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정표시장치 제조방법 |
| TWI366701B (en) * | 2004-01-26 | 2012-06-21 | Semiconductor Energy Lab | Method of manufacturing display and television |
| US7371625B2 (en) * | 2004-02-13 | 2008-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof, liquid crystal television system, and EL television system |
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| JP2002217118A (ja) * | 2001-01-22 | 2002-08-02 | Japan Pionics Co Ltd | 窒化ガリウム膜半導体の製造装置、排ガス浄化装置、及び製造設備 |
| JP2002254592A (ja) * | 2001-03-01 | 2002-09-11 | Fuji Photo Film Co Ltd | 平版印刷方法および平版印刷装置 |
| JP2003058077A (ja) | 2001-08-08 | 2003-02-28 | Fuji Photo Film Co Ltd | ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法 |
| JP4266596B2 (ja) | 2001-11-06 | 2009-05-20 | 大日本印刷株式会社 | 導電性パターン形成体の製造方法 |
| JP4672233B2 (ja) | 2001-11-06 | 2011-04-20 | 大日本印刷株式会社 | 導電性パターン形成体の製造方法 |
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| JP2003309344A (ja) * | 2002-04-18 | 2003-10-31 | Dainippon Printing Co Ltd | 導電性パターン基材の製造方法 |
| JP2004018962A (ja) * | 2002-06-18 | 2004-01-22 | Nippon Paint Co Ltd | 金属コロイドパターンの形成方法 |
| US7749684B2 (en) * | 2002-08-28 | 2010-07-06 | Dai Nippon Printing Co., Ltd. | Method for manufacturing conductive pattern forming body |
| JP4170049B2 (ja) * | 2002-08-30 | 2008-10-22 | シャープ株式会社 | パターン形成基材およびパターン形成方法 |
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| KR101037030B1 (ko) * | 2004-11-23 | 2011-05-25 | 삼성전자주식회사 | 금속 나노 결정을 이용한 금속패턴 형성 방법 |
-
2003
- 2003-10-02 JP JP2003344202A patent/JP3923462B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-22 US US10/946,649 patent/US7332432B2/en not_active Expired - Fee Related
-
2008
- 2008-01-07 US US11/970,318 patent/US7534724B2/en not_active Expired - Fee Related
-
2009
- 2009-04-29 US US12/432,503 patent/US7919411B2/en not_active Expired - Fee Related
-
2011
- 2011-02-25 US US13/034,771 patent/US8105945B2/en not_active Expired - Fee Related
- 2011-12-22 US US13/334,757 patent/US20120094412A1/en not_active Abandoned
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