JP2006106106A5 - - Google Patents
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- Publication number
- JP2006106106A5 JP2006106106A5 JP2004289021A JP2004289021A JP2006106106A5 JP 2006106106 A5 JP2006106106 A5 JP 2006106106A5 JP 2004289021 A JP2004289021 A JP 2004289021A JP 2004289021 A JP2004289021 A JP 2004289021A JP 2006106106 A5 JP2006106106 A5 JP 2006106106A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- electrode layer
- semiconductor layer
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims 80
- 239000004065 semiconductor Substances 0.000 claims 25
- 229910052751 metal Inorganic materials 0.000 claims 9
- 239000002184 metal Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 5
- 239000004973 liquid crystal related substance Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 238000005247 gettering Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- -1 osnium Chemical compound 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004289021A JP4610285B2 (ja) | 2004-09-30 | 2004-09-30 | 液晶表示装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004289021A JP4610285B2 (ja) | 2004-09-30 | 2004-09-30 | 液晶表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006106106A JP2006106106A (ja) | 2006-04-20 |
| JP2006106106A5 true JP2006106106A5 (https=) | 2007-11-08 |
| JP4610285B2 JP4610285B2 (ja) | 2011-01-12 |
Family
ID=36375955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004289021A Expired - Fee Related JP4610285B2 (ja) | 2004-09-30 | 2004-09-30 | 液晶表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4610285B2 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007313764A (ja) * | 2006-05-26 | 2007-12-06 | Sony Corp | 透明積層膜及びその製造方法、並びに液体レンズ |
| CN101617399B (zh) | 2007-02-27 | 2011-05-18 | 富士通半导体股份有限公司 | 半导体存储器件及其制造、测试方法、封装树脂形成方法 |
| JP5512931B2 (ja) * | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2008129819A1 (ja) * | 2007-04-13 | 2008-10-30 | Nikon Corporation | 表示素子の製造方法、表示素子の製造装置、及び表示素子 |
| JP4825181B2 (ja) * | 2007-09-07 | 2011-11-30 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| TWI518800B (zh) * | 2008-08-08 | 2016-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| KR101889287B1 (ko) | 2008-09-19 | 2018-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| EP2172804B1 (en) | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
| KR101579050B1 (ko) | 2008-10-03 | 2015-12-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
| WO2011043206A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011046025A1 (en) | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
| KR102257119B1 (ko) * | 2013-06-17 | 2021-05-31 | 삼성디스플레이 주식회사 | 어레이 기판 및 이를 포함하는 유기 발광 표시 장치 |
| US9472507B2 (en) | 2013-06-17 | 2016-10-18 | Samsung Display Co., Ltd. | Array substrate and organic light-emitting display including the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3486240B2 (ja) * | 1994-10-20 | 2004-01-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP3535275B2 (ja) * | 1995-07-18 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000058839A (ja) * | 1998-08-05 | 2000-02-25 | Semiconductor Energy Lab Co Ltd | 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法 |
-
2004
- 2004-09-30 JP JP2004289021A patent/JP4610285B2/ja not_active Expired - Fee Related
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