JP4610285B2 - 液晶表示装置の作製方法 - Google Patents

液晶表示装置の作製方法 Download PDF

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Publication number
JP4610285B2
JP4610285B2 JP2004289021A JP2004289021A JP4610285B2 JP 4610285 B2 JP4610285 B2 JP 4610285B2 JP 2004289021 A JP2004289021 A JP 2004289021A JP 2004289021 A JP2004289021 A JP 2004289021A JP 4610285 B2 JP4610285 B2 JP 4610285B2
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layer
electrode layer
film
semiconductor
liquid crystal
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JP2004289021A
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Japanese (ja)
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JP2006106106A (ja
JP2006106106A5 (https=
Inventor
舜平 山崎
裕子 城口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004289021A priority Critical patent/JP4610285B2/ja
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Publication of JP2006106106A5 publication Critical patent/JP2006106106A5/ja
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  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2004289021A 2004-09-30 2004-09-30 液晶表示装置の作製方法 Expired - Fee Related JP4610285B2 (ja)

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JP2004289021A JP4610285B2 (ja) 2004-09-30 2004-09-30 液晶表示装置の作製方法

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JP2004289021A JP4610285B2 (ja) 2004-09-30 2004-09-30 液晶表示装置の作製方法

Publications (3)

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JP2006106106A JP2006106106A (ja) 2006-04-20
JP2006106106A5 JP2006106106A5 (https=) 2007-11-08
JP4610285B2 true JP4610285B2 (ja) 2011-01-12

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007313764A (ja) * 2006-05-26 2007-12-06 Sony Corp 透明積層膜及びその製造方法、並びに液体レンズ
CN101617399B (zh) 2007-02-27 2011-05-18 富士通半导体股份有限公司 半导体存储器件及其制造、测试方法、封装树脂形成方法
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2008129819A1 (ja) * 2007-04-13 2008-10-30 Nikon Corporation 表示素子の製造方法、表示素子の製造装置、及び表示素子
JP4825181B2 (ja) * 2007-09-07 2011-11-30 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
TWI518800B (zh) * 2008-08-08 2016-01-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR101889287B1 (ko) 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR101579050B1 (ko) 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011046025A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR102257119B1 (ko) * 2013-06-17 2021-05-31 삼성디스플레이 주식회사 어레이 기판 및 이를 포함하는 유기 발광 표시 장치
US9472507B2 (en) 2013-06-17 2016-10-18 Samsung Display Co., Ltd. Array substrate and organic light-emitting display including the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3486240B2 (ja) * 1994-10-20 2004-01-13 株式会社半導体エネルギー研究所 半導体装置
JP3535275B2 (ja) * 1995-07-18 2004-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000058839A (ja) * 1998-08-05 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法

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JP2006106106A (ja) 2006-04-20

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