JP3890647B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP3890647B2
JP3890647B2 JP01856697A JP1856697A JP3890647B2 JP 3890647 B2 JP3890647 B2 JP 3890647B2 JP 01856697 A JP01856697 A JP 01856697A JP 1856697 A JP1856697 A JP 1856697A JP 3890647 B2 JP3890647 B2 JP 3890647B2
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JP
Japan
Prior art keywords
bit line
sub
line
nand
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP01856697A
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English (en)
Japanese (ja)
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JPH10214494A5 (enExample
JPH10214494A (ja
Inventor
謙士朗 荒瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP01856697A priority Critical patent/JP3890647B2/ja
Priority to KR1019980002469A priority patent/KR19980070897A/ko
Priority to US09/015,787 priority patent/US5969990A/en
Publication of JPH10214494A publication Critical patent/JPH10214494A/ja
Publication of JPH10214494A5 publication Critical patent/JPH10214494A5/ja
Application granted granted Critical
Publication of JP3890647B2 publication Critical patent/JP3890647B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP01856697A 1997-01-31 1997-01-31 不揮発性半導体記憶装置 Expired - Fee Related JP3890647B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP01856697A JP3890647B2 (ja) 1997-01-31 1997-01-31 不揮発性半導体記憶装置
KR1019980002469A KR19980070897A (ko) 1997-01-31 1998-01-26 불휘발성 반도체기억장치 및 그 데이터프로그램방법
US09/015,787 US5969990A (en) 1997-01-31 1998-01-29 Nonvolatile memory array with NAND string memory cell groups selectively connected to sub bit lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01856697A JP3890647B2 (ja) 1997-01-31 1997-01-31 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH10214494A JPH10214494A (ja) 1998-08-11
JPH10214494A5 JPH10214494A5 (enExample) 2004-09-24
JP3890647B2 true JP3890647B2 (ja) 2007-03-07

Family

ID=11975183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01856697A Expired - Fee Related JP3890647B2 (ja) 1997-01-31 1997-01-31 不揮発性半導体記憶装置

Country Status (3)

Country Link
US (1) US5969990A (enExample)
JP (1) JP3890647B2 (enExample)
KR (1) KR19980070897A (enExample)

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US6487116B2 (en) 1997-03-06 2002-11-26 Silicon Storage Technology, Inc. Precision programming of nonvolatile memory cells
US5870335A (en) 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6396742B1 (en) 2000-07-28 2002-05-28 Silicon Storage Technology, Inc. Testing of multilevel semiconductor memory
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US6835987B2 (en) 2001-01-31 2004-12-28 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
JP2002289705A (ja) * 2001-03-23 2002-10-04 Fujitsu Ltd 半導体メモリ
KR100387529B1 (ko) 2001-06-11 2003-06-18 삼성전자주식회사 랜덤 억세스 가능한 메모리 셀 어레이를 갖는 불휘발성반도체 메모리 장치
JP2003077282A (ja) * 2001-08-31 2003-03-14 Fujitsu Ltd 不揮発性半導体記憶装置
KR100463602B1 (ko) * 2001-12-29 2004-12-29 주식회사 하이닉스반도체 불휘발성 강유전체 메모리의 배선
KR100449953B1 (ko) * 2002-05-16 2004-09-30 주식회사 하이닉스반도체 강유전체 메모리 장치의 셀어레이
JP3863485B2 (ja) * 2002-11-29 2006-12-27 株式会社東芝 不揮発性半導体記憶装置
KR100492774B1 (ko) * 2002-12-24 2005-06-07 주식회사 하이닉스반도체 라이트 보호 영역을 구비한 비휘발성 메모리 장치
US7233522B2 (en) * 2002-12-31 2007-06-19 Sandisk 3D Llc NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
US7505321B2 (en) * 2002-12-31 2009-03-17 Sandisk 3D Llc Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
US6879505B2 (en) * 2003-03-31 2005-04-12 Matrix Semiconductor, Inc. Word line arrangement having multi-layer word line segments for three-dimensional memory array
US7233024B2 (en) 2003-03-31 2007-06-19 Sandisk 3D Llc Three-dimensional memory device incorporating segmented bit line memory array
US7177199B2 (en) * 2003-10-20 2007-02-13 Sandisk Corporation Behavior based programming of non-volatile memory
US7221588B2 (en) * 2003-12-05 2007-05-22 Sandisk 3D Llc Memory array incorporating memory cells arranged in NAND strings
WO2005066969A1 (en) * 2003-12-26 2005-07-21 Matsushita Electric Industrial Co., Ltd. Memory device, memory circuit and semiconductor integrated circuit having variable resistance
KR100559716B1 (ko) * 2004-04-01 2006-03-10 주식회사 하이닉스반도체 낸드 플래시 메모리 소자 및 이의 독출 방법
US7177191B2 (en) * 2004-12-30 2007-02-13 Sandisk 3D Llc Integrated circuit including memory array incorporating multiple types of NAND string structures
US7251160B2 (en) * 2005-03-16 2007-07-31 Sandisk Corporation Non-volatile memory and method with power-saving read and program-verify operations
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7301817B2 (en) * 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
WO2007079295A2 (en) * 2005-11-25 2007-07-12 Novelics Llc Dense read-only memory
JP4945183B2 (ja) * 2006-07-14 2012-06-06 株式会社東芝 メモリコントローラ
US7881121B2 (en) * 2006-09-25 2011-02-01 Macronix International Co., Ltd. Decoding method in an NROM flash memory array
KR100770754B1 (ko) * 2006-10-12 2007-10-29 삼성전자주식회사 비휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
US7511996B2 (en) 2006-11-30 2009-03-31 Mosaid Technologies Incorporated Flash memory program inhibit scheme
US7570520B2 (en) * 2006-12-27 2009-08-04 Sandisk Corporation Non-volatile storage system with initial programming voltage based on trial
US7551482B2 (en) * 2006-12-27 2009-06-23 Sandisk Corporation Method for programming with initial programming voltage based on trial
KR100850510B1 (ko) * 2007-01-17 2008-08-05 삼성전자주식회사 분리된 스트링 선택 라인 구조를 갖는 플래시 메모리 장치
KR100897603B1 (ko) * 2007-06-20 2009-05-14 삼성전자주식회사 반도체 메모리 장치
US7599224B2 (en) * 2007-07-03 2009-10-06 Sandisk Corporation Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7508715B2 (en) * 2007-07-03 2009-03-24 Sandisk Corporation Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7643367B2 (en) * 2007-08-15 2010-01-05 Oki Semiconductor Co., Ltd. Semiconductor memory device
JP2009059931A (ja) * 2007-08-31 2009-03-19 Toshiba Corp 不揮発性半導体記憶装置
KR100853481B1 (ko) * 2007-11-01 2008-08-21 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 독출방법
US7755939B2 (en) * 2008-01-15 2010-07-13 Micron Technology, Inc. System and devices including memory resistant to program disturb and methods of using, making, and operating the same
US7742324B2 (en) * 2008-02-19 2010-06-22 Micron Technology, Inc. Systems and devices including local data lines and methods of using, making, and operating the same
US8482981B2 (en) * 2008-05-30 2013-07-09 Qimonda Ag Method of forming an integrated circuit with NAND flash array segments and intra array multiplexers and corresponding integrated circuit with NAND flash array segments and intra array multiplexers
US20090302472A1 (en) * 2008-06-05 2009-12-10 Samsung Electronics Co., Ltd. Non-volatile memory devices including shared bit lines and methods of fabricating the same
JP5231972B2 (ja) * 2008-12-18 2013-07-10 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置
US9132421B2 (en) * 2009-11-09 2015-09-15 Shell Oil Company Composition useful in the hydroprocessing of a hydrocarbon feedstock
JP5528869B2 (ja) * 2010-03-23 2014-06-25 スパンション エルエルシー 不揮発性半導体記憶装置及びその読み出し方法
JP5661353B2 (ja) * 2010-07-06 2015-01-28 スパンション エルエルシー 不揮発性半導体記憶装置
US8797806B2 (en) 2011-08-15 2014-08-05 Micron Technology, Inc. Apparatus and methods including source gates
KR101915719B1 (ko) 2012-04-26 2019-01-08 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 동작 방법
US10541029B2 (en) 2012-08-01 2020-01-21 Micron Technology, Inc. Partial block memory operations
US9318199B2 (en) 2012-10-26 2016-04-19 Micron Technology, Inc. Partial page memory operations
JP2014127220A (ja) * 2012-12-27 2014-07-07 Toshiba Corp 半導体記憶装置
US8995195B2 (en) 2013-02-12 2015-03-31 Sandisk Technologies Inc. Fast-reading NAND flash memory
KR20160062498A (ko) 2014-11-25 2016-06-02 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
JP6122478B1 (ja) * 2015-10-22 2017-04-26 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置

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JPH07122080A (ja) * 1993-08-31 1995-05-12 Sony Corp 半導体不揮発性記憶装置
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Publication number Publication date
US5969990A (en) 1999-10-19
KR19980070897A (ko) 1998-10-26
JPH10214494A (ja) 1998-08-11

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