JP3565425B2 - 窒化ケイ素質粉末の製造方法および窒化ケイ素質焼結体の製造方法 - Google Patents

窒化ケイ素質粉末の製造方法および窒化ケイ素質焼結体の製造方法 Download PDF

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JP3565425B2
JP3565425B2 JP2000284957A JP2000284957A JP3565425B2 JP 3565425 B2 JP3565425 B2 JP 3565425B2 JP 2000284957 A JP2000284957 A JP 2000284957A JP 2000284957 A JP2000284957 A JP 2000284957A JP 3565425 B2 JP3565425 B2 JP 3565425B2
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silicon nitride
powder
sintered body
less
thermal conductivity
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JP2000284957A
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Japanese (ja)
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JP2002097005A (ja
JP2002097005A5 (enrdf_load_stackoverflow
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寿之 今村
昌久 祖父江
繁幸 濱吉
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Proterial Ltd
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Hitachi Metals Ltd
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Priority to JP2000284957A priority Critical patent/JP3565425B2/ja
Priority to DE10165107.4A priority patent/DE10165107B3/de
Priority to DE2001165080 priority patent/DE10165080B4/de
Priority to DE10146227.1A priority patent/DE10146227B4/de
Priority to US09/956,033 priority patent/US6846765B2/en
Priority to KR1020010058380A priority patent/KR100833962B1/ko
Priority to CNB011379634A priority patent/CN1192989C/zh
Publication of JP2002097005A publication Critical patent/JP2002097005A/ja
Publication of JP2002097005A5 publication Critical patent/JP2002097005A5/ja
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Publication of JP3565425B2 publication Critical patent/JP3565425B2/ja
Priority to US10/998,657 priority patent/US7031166B2/en
Priority to KR1020070095109A priority patent/KR100836150B1/ko
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JP2000284957A 2000-09-20 2000-09-20 窒化ケイ素質粉末の製造方法および窒化ケイ素質焼結体の製造方法 Expired - Lifetime JP3565425B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2000284957A JP3565425B2 (ja) 2000-09-20 2000-09-20 窒化ケイ素質粉末の製造方法および窒化ケイ素質焼結体の製造方法
DE2001165080 DE10165080B4 (de) 2000-09-20 2001-09-19 Siliciumnitrid-Pulver und -Sinterkörper sowie Verfahren zu deren Herstellung und Leiterplatte damit
DE10146227.1A DE10146227B4 (de) 2000-09-20 2001-09-19 Siliciumnitrid-Sinterkörper, Leiterplatte und thermoelektrisches Modul
DE10165107.4A DE10165107B3 (de) 2000-09-20 2001-09-19 Substrat mit Siliciumnitrid-Sinterkörper und Leiterplatte
KR1020010058380A KR100833962B1 (ko) 2000-09-20 2001-09-20 질화규소 분말, 질화규소 소결체, 질화규소 소결체 기판,및 그 질화규소 소결체 기판을 포함한 회로기판 및열전소자 모듈
CNB011379634A CN1192989C (zh) 2000-09-20 2001-09-20 氮化硅粉、其烧结体、基板、及由此的电路板和热电元件模块
US09/956,033 US6846765B2 (en) 2000-09-20 2001-09-20 Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and circuit board and thermoelectric module comprising such sintered silicon nitride substrate
US10/998,657 US7031166B2 (en) 2000-09-20 2004-11-30 Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and circuit board and thermoelectric module comprising such sintered silicon nitride substrate
KR1020070095109A KR100836150B1 (ko) 2000-09-20 2007-09-19 질화규소 소결체, 질화규소 소결체의 제조 방법 및 질화규소 소결체 기판, 이러한 질화 규소 소결체 기판을 포함하는 회로 기판

Applications Claiming Priority (1)

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JP2000284957A JP3565425B2 (ja) 2000-09-20 2000-09-20 窒化ケイ素質粉末の製造方法および窒化ケイ素質焼結体の製造方法

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JP2004130790A Division JP4089974B2 (ja) 2004-04-27 2004-04-27 窒化ケイ素質粉末、窒化ケイ素質焼結体及びこれを用いた電子部品用回路基板

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JP2002097005A JP2002097005A (ja) 2002-04-02
JP2002097005A5 JP2002097005A5 (enrdf_load_stackoverflow) 2004-08-05
JP3565425B2 true JP3565425B2 (ja) 2004-09-15

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3797905B2 (ja) * 2000-10-27 2006-07-19 株式会社東芝 窒化けい素セラミックス基板およびそれを用いた窒化けい素セラミックス回路基板並びにその製造方法
JP4518020B2 (ja) * 2005-12-26 2010-08-04 日立金属株式会社 窒化ケイ素質焼結体およびそれを用いた回路基板。
JP5200741B2 (ja) * 2007-08-01 2013-06-05 三菱化学株式会社 結晶性窒化珪素及びその製造方法、並びに、それを用いた蛍光体、該蛍光体含有組成物、発光装置、照明装置、画像表示装置、焼結体及び顔料
US9184595B2 (en) 2008-09-27 2015-11-10 Witricity Corporation Wireless energy transfer in lossy environments
US8324759B2 (en) 2008-09-27 2012-12-04 Witricity Corporation Wireless energy transfer using magnetic materials to shape field and reduce loss
US8304935B2 (en) 2008-09-27 2012-11-06 Witricity Corporation Wireless energy transfer using field shaping to reduce loss
EP2377839B1 (en) 2009-01-13 2016-10-26 Hitachi Metals, Ltd. Silicon nitride substrate manufacturing method
JP2010173877A (ja) * 2009-01-28 2010-08-12 Taiheiyo Cement Corp 窒化珪素焼結体
JP5289090B2 (ja) * 2009-02-16 2013-09-11 太平洋セメント株式会社 セラミックス部材
JP5910498B2 (ja) * 2010-08-04 2016-05-11 宇部興産株式会社 珪窒化物蛍光体用窒化珪素粉末並びにそれを用いたＣａＡｌＳｉＮ３系蛍光体、Ｓｒ２Ｓｉ５Ｎ８系蛍光体、（Ｓｒ，Ｃａ）ＡｌＳｉＮ３系蛍光体及びＬａ３Ｓｉ６Ｎ１１系蛍光体、及びその製造方法
KR101762473B1 (ko) 2010-08-19 2017-07-27 우베 고산 가부시키가이샤 규질화물 형광체용 질화규소 분말 및 그것을 이용한 Sr3Al3Si13O2N21계 형광체, β-사이알론 형광체, 그리고 그들의 제조방법
WO2012090542A1 (ja) * 2010-12-28 2012-07-05 宇部興産株式会社 多結晶シリコンインゴット鋳造用鋳型及びその製造方法並びに多結晶シリコンインゴット鋳造用鋳型の離型材用窒化珪素粉末及びそれを含有したスラリー
CN103842473B (zh) * 2011-10-12 2016-02-10 宇部兴产株式会社 氧氮化物荧光体粉末、氧氮化物荧光体粉末制造用氮化硅粉末及氧氮化物荧光体粉末的制造方法
KR101794410B1 (ko) * 2015-08-17 2017-11-07 한국과학기술원 고 열전도도 질화규소 소결체 및 이의 제조 방법
JP6729224B2 (ja) * 2015-11-26 2020-07-22 三菱マテリアル株式会社 セラミックス／アルミニウム接合体、絶縁回路基板、パワーモジュール、ｌｅｄモジュール、熱電モジュール
KR102067144B1 (ko) * 2017-06-26 2020-01-16 주식회사 엘지화학 질화규소 소결체의 제조 방법, 질화규소 소결체 및 이를 이용한 방열 기판
KR101901172B1 (ko) * 2018-05-23 2018-09-27 (주)존인피니티 전기절연성이 우수한 고열전도성 질화규소 세라믹스 기판
WO2023176500A1 (ja) * 2022-03-16 2023-09-21 株式会社 東芝 窒化珪素焼結体およびそれを用いた耐摩耗性部材

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0829923B2 (ja) * 1989-12-07 1996-03-27 電気化学工業株式会社 窒化ケイ素粉末
JP3486642B2 (ja) * 1992-11-27 2004-01-13 独立行政法人物質・材料研究機構 窒化ケイ素原料粉末の高純度化処理方法
JP3501317B2 (ja) * 1995-07-21 2004-03-02 日産自動車株式会社 高熱伝導率窒化ケイ素質焼結体および窒化ケイ素質焼結体製絶縁基板
JPH11349381A (ja) * 1998-06-08 1999-12-21 Hitachi Metals Ltd 窒化ケイ素焼結体およびそれからなるスパッタターゲット

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