JP3021800B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法Info
- Publication number
- JP3021800B2 JP3021800B2 JP3171123A JP17112391A JP3021800B2 JP 3021800 B2 JP3021800 B2 JP 3021800B2 JP 3171123 A JP3171123 A JP 3171123A JP 17112391 A JP17112391 A JP 17112391A JP 3021800 B2 JP3021800 B2 JP 3021800B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- ferroelectric
- reaction preventing
- conductive reaction
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000003990 capacitor Substances 0.000 claims description 41
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 37
- 238000009792 diffusion process Methods 0.000 claims description 32
- 239000001301 oxygen Substances 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 238000000137 annealing Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910016006 MoSi Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 229910010282 TiON Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 description 40
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 39
- 239000010936 titanium Substances 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 229910003781 PbTiO3 Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910020698 PbZrO3 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3171123A JP3021800B2 (ja) | 1990-07-24 | 1991-07-11 | 半導体装置及びその製造方法 |
| EP19910913105 EP0494313A4 (en) | 1990-07-24 | 1991-07-24 | Semiconductor device provided with ferroelectric material |
| PCT/JP1991/000992 WO1992002050A1 (en) | 1990-07-24 | 1991-07-24 | Semiconductor device provided with ferroelectric material |
| TW080106056A TW222707B (enrdf_load_html_response) | 1990-07-24 | 1991-08-02 | |
| JP11329988A JP2000174220A (ja) | 1990-07-24 | 1999-11-19 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19585790 | 1990-07-24 | ||
| JP16555391 | 1991-07-05 | ||
| JP2-195857 | 1991-07-05 | ||
| JP3-165553 | 1991-07-05 | ||
| JP3171123A JP3021800B2 (ja) | 1990-07-24 | 1991-07-11 | 半導体装置及びその製造方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11329988A Division JP2000174220A (ja) | 1990-07-24 | 1999-11-19 | 半導体装置 |
| JP11329990A Division JP2000124428A (ja) | 1990-07-24 | 1999-11-19 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0567792A JPH0567792A (ja) | 1993-03-19 |
| JP3021800B2 true JP3021800B2 (ja) | 2000-03-15 |
Family
ID=27322529
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3171123A Expired - Lifetime JP3021800B2 (ja) | 1990-07-24 | 1991-07-11 | 半導体装置及びその製造方法 |
| JP11329988A Pending JP2000174220A (ja) | 1990-07-24 | 1999-11-19 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11329988A Pending JP2000174220A (ja) | 1990-07-24 | 1999-11-19 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0494313A4 (enrdf_load_html_response) |
| JP (2) | JP3021800B2 (enrdf_load_html_response) |
| TW (1) | TW222707B (enrdf_load_html_response) |
| WO (1) | WO1992002050A1 (enrdf_load_html_response) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05211286A (ja) * | 1992-01-06 | 1993-08-20 | Nec Corp | 容量素子の製造方法 |
| JP3407204B2 (ja) | 1992-07-23 | 2003-05-19 | オリンパス光学工業株式会社 | 強誘電体集積回路及びその製造方法 |
| US6791131B1 (en) | 1993-04-02 | 2004-09-14 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
| US5392189A (en) * | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
| US6030847A (en) * | 1993-04-02 | 2000-02-29 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
| US6531730B2 (en) | 1993-08-10 | 2003-03-11 | Micron Technology, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
| US5381302A (en) * | 1993-04-02 | 1995-01-10 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
| JP2874512B2 (ja) * | 1993-05-13 | 1999-03-24 | 日本電気株式会社 | 薄膜キャパシタ及びその製造方法 |
| US5440173A (en) * | 1993-09-17 | 1995-08-08 | Radiant Technologies | High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same |
| KR100287164B1 (ko) * | 1993-09-22 | 2001-04-16 | 윤종용 | 반도체장치 및 그 제조방법 |
| US5443688A (en) * | 1993-12-02 | 1995-08-22 | Raytheon Company | Method of manufacturing a ferroelectric device using a plasma etching process |
| US5554564A (en) * | 1994-08-01 | 1996-09-10 | Texas Instruments Incorporated | Pre-oxidizing high-dielectric-constant material electrodes |
| US5622893A (en) * | 1994-08-01 | 1997-04-22 | Texas Instruments Incorporated | Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes |
| US5504041A (en) * | 1994-08-01 | 1996-04-02 | Texas Instruments Incorporated | Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
| US5498569A (en) * | 1994-08-22 | 1996-03-12 | Ramtron International Corporation | Layered local interconnect compatible with integrated circuit ferroelectric capacitors |
| US5874364A (en) * | 1995-03-27 | 1999-02-23 | Fujitsu Limited | Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same |
| US6271077B1 (en) | 1995-03-27 | 2001-08-07 | Fujitsu Limited | Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same |
| KR100292012B1 (ko) * | 1995-06-28 | 2001-11-15 | 엔, 마이클 그로브 | 실리콘에집적된강유전체커패시터를위한장벽층 |
| JP2002515743A (ja) | 1996-05-08 | 2002-05-28 | バイオジェン，インコーポレイテッド | 神経増殖および腎臓増殖を刺激するためのＲｅｔリガンド（ＲｅｔＬ） |
| JPH11195753A (ja) * | 1997-10-27 | 1999-07-21 | Seiko Epson Corp | 半導体装置およびその製造方法 |
| KR100275113B1 (ko) * | 1997-12-30 | 2001-01-15 | 김영환 | 반도체장치의강유전체캐패시터제조방법 |
| GB2340303B (en) * | 1998-08-07 | 2000-12-27 | United Microelectronics Corp | Capacitor and method for fabricating the same |
| US6762090B2 (en) | 2001-09-13 | 2004-07-13 | Hynix Semiconductor Inc. | Method for fabricating a capacitor |
| JP2004221467A (ja) | 2003-01-17 | 2004-08-05 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP2006086292A (ja) | 2004-09-15 | 2006-03-30 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| JP4659772B2 (ja) * | 2007-02-15 | 2011-03-30 | Ｏｋｉセミコンダクタ株式会社 | 半導体素子の製造方法 |
| CN108110007A (zh) * | 2017-11-03 | 2018-06-01 | 中国科学院微电子研究所 | 铁电存储器及其访问方法 |
| US11469327B2 (en) | 2019-04-08 | 2022-10-11 | Kepler Computing Inc. | Doped polar layers and semiconductor device incorporating same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01251760A (ja) * | 1988-03-31 | 1989-10-06 | Seiko Epson Corp | 強誘電体記憶装置 |
| JPH02183570A (ja) * | 1989-01-10 | 1990-07-18 | Seiko Epson Corp | 強誘電体集積回路装置とその製造方法 |
| JPH02288367A (ja) * | 1989-04-28 | 1990-11-28 | Seiko Epson Corp | 半導体装置 |
| US5005102A (en) * | 1989-06-20 | 1991-04-02 | Ramtron Corporation | Multilayer electrodes for integrated circuit capacitors |
| EP0417341B1 (de) * | 1989-09-13 | 1994-03-02 | Deutsche ITT Industries GmbH | Kapazitätsstruktur für Feldeffekttransistor-Halbleiterspeicher |
-
1991
- 1991-07-11 JP JP3171123A patent/JP3021800B2/ja not_active Expired - Lifetime
- 1991-07-24 WO PCT/JP1991/000992 patent/WO1992002050A1/ja not_active Application Discontinuation
- 1991-07-24 EP EP19910913105 patent/EP0494313A4/en not_active Withdrawn
- 1991-08-02 TW TW080106056A patent/TW222707B/zh not_active IP Right Cessation
-
1999
- 1999-11-19 JP JP11329988A patent/JP2000174220A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0567792A (ja) | 1993-03-19 |
| WO1992002050A1 (en) | 1992-02-06 |
| EP0494313A1 (en) | 1992-07-15 |
| TW222707B (enrdf_load_html_response) | 1994-04-21 |
| EP0494313A4 (en) | 1992-10-28 |
| JP2000174220A (ja) | 2000-06-23 |
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