TW222707B - - Google Patents

Info

Publication number
TW222707B
TW222707B TW080106056A TW80106056A TW222707B TW 222707 B TW222707 B TW 222707B TW 080106056 A TW080106056 A TW 080106056A TW 80106056 A TW80106056 A TW 80106056A TW 222707 B TW222707 B TW 222707B
Authority
TW
Taiwan
Application number
TW080106056A
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of TW222707B publication Critical patent/TW222707B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
TW080106056A 1990-07-24 1991-08-02 TW222707B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19585790 1990-07-24
JP16555391 1991-07-05
JP3171123A JP3021800B2 (ja) 1990-07-24 1991-07-11 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW222707B true TW222707B (zh) 1994-04-21

Family

ID=27322529

Family Applications (1)

Application Number Title Priority Date Filing Date
TW080106056A TW222707B (zh) 1990-07-24 1991-08-02

Country Status (4)

Country Link
EP (1) EP0494313A4 (zh)
JP (2) JP3021800B2 (zh)
TW (1) TW222707B (zh)
WO (1) WO1992002050A1 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211286A (ja) * 1992-01-06 1993-08-20 Nec Corp 容量素子の製造方法
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US6030847A (en) * 1993-04-02 2000-02-29 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US6791131B1 (en) 1993-04-02 2004-09-14 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5392189A (en) 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
US6531730B2 (en) 1993-08-10 2003-03-11 Micron Technology, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
JP2874512B2 (ja) * 1993-05-13 1999-03-24 日本電気株式会社 薄膜キャパシタ及びその製造方法
US5440173A (en) * 1993-09-17 1995-08-08 Radiant Technologies High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same
KR100287164B1 (ko) * 1993-09-22 2001-04-16 윤종용 반도체장치 및 그 제조방법
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5554564A (en) * 1994-08-01 1996-09-10 Texas Instruments Incorporated Pre-oxidizing high-dielectric-constant material electrodes
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5498569A (en) * 1994-08-22 1996-03-12 Ramtron International Corporation Layered local interconnect compatible with integrated circuit ferroelectric capacitors
US5874364A (en) 1995-03-27 1999-02-23 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
US6271077B1 (en) 1995-03-27 2001-08-07 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
CA2225681C (en) * 1995-06-28 2001-09-11 Bell Communications Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
EP1757617A1 (en) 1996-05-08 2007-02-28 Biogen Idec MA Inc. Ret Ligand (RetL) for stimulating neural and renal growth
JPH11195753A (ja) * 1997-10-27 1999-07-21 Seiko Epson Corp 半導体装置およびその製造方法
KR100275113B1 (ko) * 1997-12-30 2001-01-15 김영환 반도체장치의강유전체캐패시터제조방법
GB2340303B (en) * 1998-08-07 2000-12-27 United Microelectronics Corp Capacitor and method for fabricating the same
US6762090B2 (en) 2001-09-13 2004-07-13 Hynix Semiconductor Inc. Method for fabricating a capacitor
JP2004221467A (ja) 2003-01-17 2004-08-05 Fujitsu Ltd 半導体装置及びその製造方法
JP2006086292A (ja) 2004-09-15 2006-03-30 Toshiba Corp 半導体記憶装置およびその製造方法
JP4659772B2 (ja) * 2007-02-15 2011-03-30 Ｏｋｉセミコンダクタ株式会社 半導体素子の製造方法
CN108110007A (zh) * 2017-11-03 2018-06-01 中国科学院微电子研究所 铁电存储器及其访问方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072261A (ja) * 1983-09-28 1985-04-24 Fujitsu Ltd 半導体装置
JPH01251760A (ja) * 1988-03-31 1989-10-06 Seiko Epson Corp 強誘電体記憶装置
JPH02183570A (ja) * 1989-01-10 1990-07-18 Seiko Epson Corp 強誘電体集積回路装置とその製造方法
JPH02288367A (ja) * 1989-04-28 1990-11-28 Seiko Epson Corp 半導体装置
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
EP0417341B1 (de) * 1989-09-13 1994-03-02 Deutsche ITT Industries GmbH Kapazitätsstruktur für Feldeffekttransistor-Halbleiterspeicher

Also Published As

Publication number Publication date
EP0494313A1 (en) 1992-07-15
EP0494313A4 (en) 1992-10-28
WO1992002050A1 (en) 1992-02-06
JP3021800B2 (ja) 2000-03-15
JPH0567792A (ja) 1993-03-19
JP2000174220A (ja) 2000-06-23

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Legal Events

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MK4A Expiration of patent term of an invention patent