JP2870719B2 - 処理装置 - Google Patents

処理装置

Info

Publication number
JP2870719B2
JP2870719B2 JP5034204A JP3420493A JP2870719B2 JP 2870719 B2 JP2870719 B2 JP 2870719B2 JP 5034204 A JP5034204 A JP 5034204A JP 3420493 A JP3420493 A JP 3420493A JP 2870719 B2 JP2870719 B2 JP 2870719B2
Authority
JP
Japan
Prior art keywords
processing
container
agent
liquid
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5034204A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06232035A (ja
Inventor
伝 大森
浩二 原田
尊三 佐藤
徳行 穴井
雅文 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP5034204A priority Critical patent/JP2870719B2/ja
Priority to KR1019940001584A priority patent/KR100230693B1/ko
Priority to US08/189,071 priority patent/US5505781A/en
Priority to TW083101082A priority patent/TW242194B/zh
Publication of JPH06232035A publication Critical patent/JPH06232035A/ja
Priority to US08/595,785 priority patent/US5681614A/en
Application granted granted Critical
Publication of JP2870719B2 publication Critical patent/JP2870719B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/101—Liquid Source Chemical Depostion, i.e. LSCVD or Aerosol Chemical Vapor Deposition, i.e. ACVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP5034204A 1993-01-29 1993-01-29 処理装置 Expired - Fee Related JP2870719B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP5034204A JP2870719B2 (ja) 1993-01-29 1993-01-29 処理装置
KR1019940001584A KR100230693B1 (ko) 1993-01-29 1994-01-28 처리장치및처리방법
US08/189,071 US5505781A (en) 1993-01-29 1994-01-28 Hydrophobic processing apparatus including a liquid delivery system
TW083101082A TW242194B (enExample) 1993-01-29 1994-02-08
US08/595,785 US5681614A (en) 1993-01-29 1996-02-02 Hydrophobic treatment method involving delivery of a liquid process agent to a process space

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5034204A JP2870719B2 (ja) 1993-01-29 1993-01-29 処理装置

Publications (2)

Publication Number Publication Date
JPH06232035A JPH06232035A (ja) 1994-08-19
JP2870719B2 true JP2870719B2 (ja) 1999-03-17

Family

ID=12407635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5034204A Expired - Fee Related JP2870719B2 (ja) 1993-01-29 1993-01-29 処理装置

Country Status (4)

Country Link
US (2) US5505781A (enExample)
JP (1) JP2870719B2 (enExample)
KR (1) KR100230693B1 (enExample)
TW (1) TW242194B (enExample)

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EP0551105A3 (en) * 1992-01-07 1993-09-15 Fujitsu Limited Negative type composition for chemically amplified resist and process and apparatus of chemically amplified resist pattern
US6428623B2 (en) * 1993-05-14 2002-08-06 Micron Technology, Inc. Chemical vapor deposition apparatus with liquid feed
JPH07312329A (ja) * 1994-05-18 1995-11-28 Dainippon Screen Mfg Co Ltd 密着強化処理装置および密着強化処理方法
US5641541A (en) * 1995-09-29 1997-06-24 Taiwan Semiconductor Manufacturing Company Process to apply photoresist printer to a wafer
US5763006A (en) * 1996-10-04 1998-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for automatic purge of HMDS vapor piping
TW466579B (en) * 1996-11-01 2001-12-01 Tokyo Electron Ltd Method and apparatus for processing substrate
JPH1154496A (ja) * 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
JP3406488B2 (ja) * 1997-09-05 2003-05-12 東京エレクトロン株式会社 真空処理装置
TW432578B (en) 1997-09-18 2001-05-01 Tokyo Electron Ltd A vacuum processing apparatus
KR100524204B1 (ko) * 1998-01-07 2006-01-27 동경 엘렉트론 주식회사 가스 처리장치
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
KR20010034781A (ko) 1998-04-14 2001-04-25 잭 피. 샐러노 박막 증착 시스템
US6358323B1 (en) * 1998-07-21 2002-03-19 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in a substrate processing system
US6409837B1 (en) * 1999-01-13 2002-06-25 Tokyo Electron Limited Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
US6537420B2 (en) * 1999-12-17 2003-03-25 Texas Instruments Incorporated Method and apparatus for restricting process fluid flow within a showerhead assembly
DE10003758A1 (de) * 2000-01-28 2001-08-02 Aixtron Gmbh Vorrichtung und Verfahren zum Abscheiden wenigstens eines in flüssiger oder gelöster Form vorliegenden Prekursors
US6596085B1 (en) * 2000-02-01 2003-07-22 Applied Materials, Inc. Methods and apparatus for improved vaporization of deposition material in a substrate processing system
SG89379A1 (en) * 2000-02-22 2002-06-18 Tokyo Electron Ltd Treatment apparatus
JP3872952B2 (ja) * 2000-10-27 2007-01-24 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US20040025787A1 (en) * 2002-04-19 2004-02-12 Selbrede Steven C. System for depositing a film onto a substrate using a low pressure gas precursor
TWI336905B (en) * 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
US20040040503A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040157430A1 (en) * 2003-02-07 2004-08-12 Asml Netherlands B.V. Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
TW573317B (en) * 2003-04-01 2004-01-21 Mosel Vitelic Inc Coating method of adhesive
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
US7326469B2 (en) * 2004-09-16 2008-02-05 General Electric Company Coating system and process and apparatus for depositing a coating system
US7255747B2 (en) 2004-12-22 2007-08-14 Sokudo Co., Ltd. Coat/develop module with independent stations
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
CN1847980B (zh) * 2006-03-24 2010-12-01 友达光电股份有限公司 低压处理设备
WO2008017208A1 (fr) * 2006-08-03 2008-02-14 He Jian Technology (Suzhou) Co., Ltd. Dispositif de purge automatique destiné à purger le pipeline d'un revêtement de résine photorésistante et appareil de développement
US7993457B1 (en) * 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
JP5196220B2 (ja) * 2007-04-23 2013-05-15 兵神装備株式会社 汲出し装置
RU2367056C2 (ru) * 2007-07-16 2009-09-10 Государственное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Способ подготовки поверхности подложек
US8596336B2 (en) * 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
KR101234409B1 (ko) * 2009-09-30 2013-02-18 시케이디 가부시키가이샤 액체 기화 시스템
KR101845580B1 (ko) 2011-01-19 2018-04-04 시케이디 가부시키가이샤 액체 기화기
JP5989944B2 (ja) 2011-09-30 2016-09-07 Ckd株式会社 液体制御装置
KR101892758B1 (ko) 2011-09-30 2018-10-04 시케이디 가부시키가이샤 액체 제어 장치
JP5810004B2 (ja) * 2012-02-27 2015-11-11 Ckd株式会社 液体制御装置
JP5819154B2 (ja) 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
JP5973178B2 (ja) 2012-02-01 2016-08-23 Ckd株式会社 液体制御装置
JP5919089B2 (ja) * 2012-05-15 2016-05-18 Ckd株式会社 液体制御装置
JP5919115B2 (ja) 2012-07-12 2016-05-18 Ckd株式会社 液体制御装置、及び液体制御装置に適用される網状体組立体
US9353439B2 (en) 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
CN105445973B (zh) * 2015-12-31 2019-04-30 京东方科技集团股份有限公司 一种抽真空装置及采用该抽真空装置的操作方法
US10177001B2 (en) * 2016-05-31 2019-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. Surface modifying material for semiconductor device fabrication
JP7314634B2 (ja) * 2019-06-11 2023-07-26 東京エレクトロン株式会社 塗布装置及び塗布方法

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JPS59177368A (ja) * 1983-03-29 1984-10-08 Mitsubishi Heavy Ind Ltd 真空蒸着装置
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IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
US4789564A (en) * 1987-03-31 1988-12-06 Union Carbide Corporation Hydridoaminosilane treatment for rendering surfaces water-repellent
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US5252134A (en) * 1991-05-31 1993-10-12 Stauffer Craig M Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing
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EP0548990B1 (en) * 1991-12-26 1997-03-12 Canon Kabushiki Kaisha Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practising said method
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
JP3319472B2 (ja) * 1992-12-07 2002-09-03 富士通株式会社 半導体装置とその製造方法

Also Published As

Publication number Publication date
JPH06232035A (ja) 1994-08-19
US5681614A (en) 1997-10-28
TW242194B (enExample) 1995-03-01
KR100230693B1 (ko) 1999-11-15
US5505781A (en) 1996-04-09

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