KR100230693B1 - 처리장치및처리방법 - Google Patents

처리장치및처리방법 Download PDF

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Publication number
KR100230693B1
KR100230693B1 KR1019940001584A KR19940001584A KR100230693B1 KR 100230693 B1 KR100230693 B1 KR 100230693B1 KR 1019940001584 A KR1019940001584 A KR 1019940001584A KR 19940001584 A KR19940001584 A KR 19940001584A KR 100230693 B1 KR100230693 B1 KR 100230693B1
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KR
South Korea
Prior art keywords
space
processing
substrate
liquid
agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019940001584A
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English (en)
Korean (ko)
Inventor
하라다고지
사토다카미
아나이노리유키
노무라마사후미
오모리쓰다에
Original Assignee
다카시마 히로시
도오교오에레구토론큐우슈우가부시끼가이샤
히가시 데쓰로
동경 엘렉트론주식회사
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Application filed by 다카시마 히로시, 도오교오에레구토론큐우슈우가부시끼가이샤, 히가시 데쓰로, 동경 엘렉트론주식회사 filed Critical 다카시마 히로시
Application granted granted Critical
Publication of KR100230693B1 publication Critical patent/KR100230693B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/101—Liquid Source Chemical Depostion, i.e. LSCVD or Aerosol Chemical Vapor Deposition, i.e. ACVD

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019940001584A 1993-01-29 1994-01-28 처리장치및처리방법 Expired - Fee Related KR100230693B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5034204A JP2870719B2 (ja) 1993-01-29 1993-01-29 処理装置
JP93-34204 1993-01-29

Publications (1)

Publication Number Publication Date
KR100230693B1 true KR100230693B1 (ko) 1999-11-15

Family

ID=12407635

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940001584A Expired - Fee Related KR100230693B1 (ko) 1993-01-29 1994-01-28 처리장치및처리방법

Country Status (4)

Country Link
US (2) US5505781A (enExample)
JP (1) JP2870719B2 (enExample)
KR (1) KR100230693B1 (enExample)
TW (1) TW242194B (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0551105A3 (en) * 1992-01-07 1993-09-15 Fujitsu Limited Negative type composition for chemically amplified resist and process and apparatus of chemically amplified resist pattern
US6428623B2 (en) * 1993-05-14 2002-08-06 Micron Technology, Inc. Chemical vapor deposition apparatus with liquid feed
JPH07312329A (ja) * 1994-05-18 1995-11-28 Dainippon Screen Mfg Co Ltd 密着強化処理装置および密着強化処理方法
US5641541A (en) * 1995-09-29 1997-06-24 Taiwan Semiconductor Manufacturing Company Process to apply photoresist printer to a wafer
US5763006A (en) * 1996-10-04 1998-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for automatic purge of HMDS vapor piping
US6024502A (en) * 1996-11-01 2000-02-15 Tokyo Electron Limited Method and apparatus for processing substrate
JPH1154496A (ja) * 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
JP3406488B2 (ja) * 1997-09-05 2003-05-12 東京エレクトロン株式会社 真空処理装置
US6207006B1 (en) 1997-09-18 2001-03-27 Tokyo Electron Limited Vacuum processing apparatus
KR100524204B1 (ko) * 1998-01-07 2006-01-27 동경 엘렉트론 주식회사 가스 처리장치
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
EP1073777A2 (en) 1998-04-14 2001-02-07 CVD Systems, Inc. Film deposition system
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
US6358323B1 (en) * 1998-07-21 2002-03-19 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in a substrate processing system
US6409837B1 (en) * 1999-01-13 2002-06-25 Tokyo Electron Limited Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
US6537420B2 (en) * 1999-12-17 2003-03-25 Texas Instruments Incorporated Method and apparatus for restricting process fluid flow within a showerhead assembly
DE10003758A1 (de) * 2000-01-28 2001-08-02 Aixtron Gmbh Vorrichtung und Verfahren zum Abscheiden wenigstens eines in flüssiger oder gelöster Form vorliegenden Prekursors
US6596085B1 (en) * 2000-02-01 2003-07-22 Applied Materials, Inc. Methods and apparatus for improved vaporization of deposition material in a substrate processing system
KR20010083206A (ko) * 2000-02-22 2001-08-31 히가시 데쓰로 처리장치
JP3872952B2 (ja) * 2000-10-27 2007-01-24 東京エレクトロン株式会社 熱処理装置及び熱処理方法
KR101040446B1 (ko) * 2002-04-19 2011-06-09 맷슨 테크놀로지, 인크. 저증기압 가스 전구체를 이용하여 기판 상에 막을증착하기 위한 시스템
TWI336905B (en) * 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040503A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040157430A1 (en) * 2003-02-07 2004-08-12 Asml Netherlands B.V. Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
TW573317B (en) * 2003-04-01 2004-01-21 Mosel Vitelic Inc Coating method of adhesive
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
US7326469B2 (en) * 2004-09-16 2008-02-05 General Electric Company Coating system and process and apparatus for depositing a coating system
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US20060130767A1 (en) 2004-12-22 2006-06-22 Applied Materials, Inc. Purged vacuum chuck with proximity pins
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
CN1847980B (zh) * 2006-03-24 2010-12-01 友达光电股份有限公司 低压处理设备
WO2008017208A1 (fr) * 2006-08-03 2008-02-14 He Jian Technology (Suzhou) Co., Ltd. Dispositif de purge automatique destiné à purger le pipeline d'un revêtement de résine photorésistante et appareil de développement
US7993457B1 (en) * 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
JP5196220B2 (ja) * 2007-04-23 2013-05-15 兵神装備株式会社 汲出し装置
RU2367056C2 (ru) * 2007-07-16 2009-09-10 Государственное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Способ подготовки поверхности подложек
US8596336B2 (en) * 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
CN102470282B (zh) * 2009-09-30 2013-02-13 Ckd株式会社 液体汽化系统
JP5810101B2 (ja) 2011-01-19 2015-11-11 Ckd株式会社 液体気化器
JP5810004B2 (ja) * 2012-02-27 2015-11-11 Ckd株式会社 液体制御装置
JP5989944B2 (ja) 2011-09-30 2016-09-07 Ckd株式会社 液体制御装置
KR101892758B1 (ko) 2011-09-30 2018-10-04 시케이디 가부시키가이샤 액체 제어 장치
JP5819154B2 (ja) 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
JP5973178B2 (ja) 2012-02-01 2016-08-23 Ckd株式会社 液体制御装置
JP5919089B2 (ja) * 2012-05-15 2016-05-18 Ckd株式会社 液体制御装置
JP5919115B2 (ja) * 2012-07-12 2016-05-18 Ckd株式会社 液体制御装置、及び液体制御装置に適用される網状体組立体
US9353439B2 (en) 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
CN105445973B (zh) * 2015-12-31 2019-04-30 京东方科技集团股份有限公司 一种抽真空装置及采用该抽真空装置的操作方法
US10177001B2 (en) * 2016-05-31 2019-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. Surface modifying material for semiconductor device fabrication
JP7314634B2 (ja) * 2019-06-11 2023-07-26 東京エレクトロン株式会社 塗布装置及び塗布方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0028478B1 (en) * 1979-10-31 1985-02-20 The University Of Birmingham Improvements in or relating to pipette means
JPS59177368A (ja) * 1983-03-29 1984-10-08 Mitsubishi Heavy Ind Ltd 真空蒸着装置
JPS62129846A (ja) * 1985-12-02 1987-06-12 Dainippon Screen Mfg Co Ltd フオトレジストの塗布方法及び塗布装置
IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
US4789564A (en) * 1987-03-31 1988-12-06 Union Carbide Corporation Hydridoaminosilane treatment for rendering surfaces water-repellent
JPH0333058Y2 (enExample) * 1987-06-26 1991-07-12
GB2213837B (en) * 1987-12-22 1992-03-11 Philips Electronic Associated Electronic device manufacture with deposition of material
US5278138A (en) * 1990-04-16 1994-01-11 Ott Kevin C Aerosol chemical vapor deposition of metal oxide films
US5252134A (en) * 1991-05-31 1993-10-12 Stauffer Craig M Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing
US5203925A (en) * 1991-06-20 1993-04-20 Matsushita Electric Industrial Co., Ltd. Apparatus for producing a thin film of tantalum oxide
EP0548990B1 (en) * 1991-12-26 1997-03-12 Canon Kabushiki Kaisha Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practising said method
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
JP3319472B2 (ja) * 1992-12-07 2002-09-03 富士通株式会社 半導体装置とその製造方法

Also Published As

Publication number Publication date
TW242194B (enExample) 1995-03-01
US5505781A (en) 1996-04-09
JP2870719B2 (ja) 1999-03-17
US5681614A (en) 1997-10-28
JPH06232035A (ja) 1994-08-19

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