TW242194B - - Google Patents

Info

Publication number
TW242194B
TW242194B TW083101082A TW83101082A TW242194B TW 242194 B TW242194 B TW 242194B TW 083101082 A TW083101082 A TW 083101082A TW 83101082 A TW83101082 A TW 83101082A TW 242194 B TW242194 B TW 242194B
Authority
TW
Taiwan
Application number
TW083101082A
Original Assignee
Tokyo Electron Co Ltd
Tel Kyushu Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Co Ltd, Tel Kyushu Kk filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW242194B publication Critical patent/TW242194B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/101—Liquid Source Chemical Depostion, i.e. LSCVD or Aerosol Chemical Vapor Deposition, i.e. ACVD
TW083101082A 1993-01-29 1994-02-08 TW242194B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5034204A JP2870719B2 (ja) 1993-01-29 1993-01-29 処理装置

Publications (1)

Publication Number Publication Date
TW242194B true TW242194B (zh) 1995-03-01

Family

ID=12407635

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083101082A TW242194B (zh) 1993-01-29 1994-02-08

Country Status (4)

Country Link
US (2) US5505781A (zh)
JP (1) JP2870719B2 (zh)
KR (1) KR100230693B1 (zh)
TW (1) TW242194B (zh)

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EP0551105A3 (en) * 1992-01-07 1993-09-15 Fujitsu Limited Negative type composition for chemically amplified resist and process and apparatus of chemically amplified resist pattern
US6428623B2 (en) * 1993-05-14 2002-08-06 Micron Technology, Inc. Chemical vapor deposition apparatus with liquid feed
JPH07312329A (ja) * 1994-05-18 1995-11-28 Dainippon Screen Mfg Co Ltd 密着強化処理装置および密着強化処理方法
US5641541A (en) * 1995-09-29 1997-06-24 Taiwan Semiconductor Manufacturing Company Process to apply photoresist printer to a wafer
US5763006A (en) * 1996-10-04 1998-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for automatic purge of HMDS vapor piping
SG67433A1 (en) * 1996-11-01 1999-09-21 Tokyo Electron Ltd Method and apparatus for processing substrate
JPH1154496A (ja) * 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
JP3406488B2 (ja) * 1997-09-05 2003-05-12 東京エレクトロン株式会社 真空処理装置
US6207006B1 (en) 1997-09-18 2001-03-27 Tokyo Electron Limited Vacuum processing apparatus
KR100524204B1 (ko) * 1998-01-07 2006-01-27 동경 엘렉트론 주식회사 가스 처리장치
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
KR20010034781A (ko) 1998-04-14 2001-04-25 잭 피. 샐러노 박막 증착 시스템
US6358323B1 (en) * 1998-07-21 2002-03-19 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in a substrate processing system
US6409837B1 (en) 1999-01-13 2002-06-25 Tokyo Electron Limited Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
US6537420B2 (en) * 1999-12-17 2003-03-25 Texas Instruments Incorporated Method and apparatus for restricting process fluid flow within a showerhead assembly
DE10003758A1 (de) * 2000-01-28 2001-08-02 Aixtron Gmbh Vorrichtung und Verfahren zum Abscheiden wenigstens eines in flüssiger oder gelöster Form vorliegenden Prekursors
US6596085B1 (en) * 2000-02-01 2003-07-22 Applied Materials, Inc. Methods and apparatus for improved vaporization of deposition material in a substrate processing system
KR20010083206A (ko) * 2000-02-22 2001-08-31 히가시 데쓰로 처리장치
JP3872952B2 (ja) * 2000-10-27 2007-01-24 東京エレクトロン株式会社 熱処理装置及び熱処理方法
JP2005523384A (ja) * 2002-04-19 2005-08-04 マットソン テクノロジイ インコーポレイテッド 低蒸気圧のガス前駆体を用いて基板上にフィルムを蒸着させるシステム
TWI336905B (en) * 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040503A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040157430A1 (en) * 2003-02-07 2004-08-12 Asml Netherlands B.V. Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
TW573317B (en) * 2003-04-01 2004-01-21 Mosel Vitelic Inc Coating method of adhesive
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
US7326469B2 (en) * 2004-09-16 2008-02-05 General Electric Company Coating system and process and apparatus for depositing a coating system
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7255747B2 (en) 2004-12-22 2007-08-14 Sokudo Co., Ltd. Coat/develop module with independent stations
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
CN1847980B (zh) * 2006-03-24 2010-12-01 友达光电股份有限公司 低压处理设备
CN101479054B (zh) * 2006-08-03 2010-09-01 和舰科技(苏州)有限公司 一种光阻涂布和显影装置中的管路自动清洗装置
US7993457B1 (en) * 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
JP5196220B2 (ja) * 2007-04-23 2013-05-15 兵神装備株式会社 汲出し装置
US8596336B2 (en) * 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
US8361231B2 (en) 2009-09-30 2013-01-29 Ckd Corporation Liquid vaporization system
KR101845580B1 (ko) 2011-01-19 2018-04-04 시케이디 가부시키가이샤 액체 기화기
JP5810004B2 (ja) * 2012-02-27 2015-11-11 Ckd株式会社 液体制御装置
JP5989944B2 (ja) 2011-09-30 2016-09-07 Ckd株式会社 液体制御装置
KR101892758B1 (ko) 2011-09-30 2018-10-04 시케이디 가부시키가이샤 액체 제어 장치
JP5819154B2 (ja) 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
JP5973178B2 (ja) 2012-02-01 2016-08-23 Ckd株式会社 液体制御装置
JP5919089B2 (ja) * 2012-05-15 2016-05-18 Ckd株式会社 液体制御装置
JP5919115B2 (ja) * 2012-07-12 2016-05-18 Ckd株式会社 液体制御装置、及び液体制御装置に適用される網状体組立体
US9353439B2 (en) 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
CN105445973B (zh) * 2015-12-31 2019-04-30 京东方科技集团股份有限公司 一种抽真空装置及采用该抽真空装置的操作方法
US10177001B2 (en) * 2016-05-31 2019-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. Surface modifying material for semiconductor device fabrication
JP7314634B2 (ja) * 2019-06-11 2023-07-26 東京エレクトロン株式会社 塗布装置及び塗布方法

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EP0028478B1 (en) * 1979-10-31 1985-02-20 The University Of Birmingham Improvements in or relating to pipette means
JPS59177368A (ja) * 1983-03-29 1984-10-08 Mitsubishi Heavy Ind Ltd 真空蒸着装置
JPS62129846A (ja) * 1985-12-02 1987-06-12 Dainippon Screen Mfg Co Ltd フオトレジストの塗布方法及び塗布装置
IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
US4789564A (en) * 1987-03-31 1988-12-06 Union Carbide Corporation Hydridoaminosilane treatment for rendering surfaces water-repellent
JPH0333058Y2 (zh) * 1987-06-26 1991-07-12
GB2213837B (en) * 1987-12-22 1992-03-11 Philips Electronic Associated Electronic device manufacture with deposition of material
US5278138A (en) * 1990-04-16 1994-01-11 Ott Kevin C Aerosol chemical vapor deposition of metal oxide films
US5252134A (en) * 1991-05-31 1993-10-12 Stauffer Craig M Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing
US5203925A (en) * 1991-06-20 1993-04-20 Matsushita Electric Industrial Co., Ltd. Apparatus for producing a thin film of tantalum oxide
DE69218152T2 (de) * 1991-12-26 1997-08-28 Canon Kk Herstellungsverfahren einer niedergeschlagenen Schicht mittels CVD, unter Verwendung von flüssigem Rohstoff und dazu geeignete Vorrichtung
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
JP3319472B2 (ja) * 1992-12-07 2002-09-03 富士通株式会社 半導体装置とその製造方法

Also Published As

Publication number Publication date
US5505781A (en) 1996-04-09
KR100230693B1 (ko) 1999-11-15
JPH06232035A (ja) 1994-08-19
US5681614A (en) 1997-10-28
JP2870719B2 (ja) 1999-03-17

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