JP2025023912A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2025023912A5 JP2025023912A5 JP2024170048A JP2024170048A JP2025023912A5 JP 2025023912 A5 JP2025023912 A5 JP 2025023912A5 JP 2024170048 A JP2024170048 A JP 2024170048A JP 2024170048 A JP2024170048 A JP 2024170048A JP 2025023912 A5 JP2025023912 A5 JP 2025023912A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- epitaxial
- gan
- semiconductor structure
- epitaxial semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762447857P | 2017-01-18 | 2017-01-18 | |
| US62/447,857 | 2017-01-18 | ||
| US201762591016P | 2017-11-27 | 2017-11-27 | |
| US62/591,016 | 2017-11-27 | ||
| US15/864,977 | 2018-01-08 | ||
| US15/864,977 US10355120B2 (en) | 2017-01-18 | 2018-01-08 | Gallium nitride epitaxial structures for power devices |
| JP2019538435A JP7105239B2 (ja) | 2017-01-18 | 2018-01-10 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
| PCT/US2018/013206 WO2018136278A1 (en) | 2017-01-18 | 2018-01-10 | Gallium nitride expitaxial structures for power devices |
| JP2022110889A JP7565318B2 (ja) | 2017-01-18 | 2022-07-11 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022110889A Division JP7565318B2 (ja) | 2017-01-18 | 2022-07-11 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025023912A JP2025023912A (ja) | 2025-02-19 |
| JP2025023912A5 true JP2025023912A5 (https=) | 2025-03-26 |
Family
ID=62841145
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019538435A Active JP7105239B2 (ja) | 2017-01-18 | 2018-01-10 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
| JP2022110889A Active JP7565318B2 (ja) | 2017-01-18 | 2022-07-11 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
| JP2024170048A Pending JP2025023912A (ja) | 2017-01-18 | 2024-09-30 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019538435A Active JP7105239B2 (ja) | 2017-01-18 | 2018-01-10 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
| JP2022110889A Active JP7565318B2 (ja) | 2017-01-18 | 2022-07-11 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US10355120B2 (https=) |
| EP (1) | EP3571336A4 (https=) |
| JP (3) | JP7105239B2 (https=) |
| KR (4) | KR102595284B1 (https=) |
| CN (2) | CN110177905B (https=) |
| SG (1) | SG11201906133PA (https=) |
| TW (2) | TWI781132B (https=) |
| WO (1) | WO2018136278A1 (https=) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10297445B2 (en) * | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
| US10892356B2 (en) | 2016-06-24 | 2021-01-12 | Cree, Inc. | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same |
| US12484244B2 (en) | 2016-06-24 | 2025-11-25 | Wolfspeed, Inc. | Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same |
| US10355120B2 (en) * | 2017-01-18 | 2019-07-16 | QROMIS, Inc. | Gallium nitride epitaxial structures for power devices |
| US10720520B2 (en) | 2017-06-21 | 2020-07-21 | Infineon Technologies Austria Ag | Method of controlling wafer bow in a type III-V semiconductor device |
| FR3071854A1 (fr) * | 2017-10-03 | 2019-04-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un composant electronique a heterojonction muni d'une couche barriere enterree |
| CN111146282B (zh) * | 2018-11-06 | 2023-03-28 | 世界先进积体电路股份有限公司 | 高电子迁移率晶体管装置及其制造方法 |
| TWI706563B (zh) * | 2019-03-25 | 2020-10-01 | 世界先進積體電路股份有限公司 | 半導體結構、高電子遷移率電晶體及半導體結構的製造方法 |
| US11380763B2 (en) * | 2019-04-29 | 2022-07-05 | Arizona Board Of Regents On Behalf Of Arizona State University | Contact structures for n-type diamond |
| KR102866846B1 (ko) * | 2019-05-20 | 2025-09-30 | 램 리써치 코포레이션 | SiCxOy를 위한 핵생성 층으로서 SixNy |
| US11114555B2 (en) * | 2019-08-20 | 2021-09-07 | Vanguard International Semiconductor Corporation | High electron mobility transistor device and methods for forming the same |
| JP7319227B2 (ja) * | 2020-05-11 | 2023-08-01 | 信越化学工業株式会社 | Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法 |
| CN111902945B (zh) * | 2020-06-04 | 2022-05-20 | 英诺赛科（珠海）科技有限公司 | 半导体装置及其制造方法 |
| US11670505B2 (en) * | 2020-08-28 | 2023-06-06 | Vanguard International Semiconductor Corporation | Semiconductor substrate, semiconductor device, and method for forming semiconductor structure |
| WO2022141442A1 (zh) * | 2020-12-31 | 2022-07-07 | 华为技术有限公司 | 一种集成电路、功率放大器及电子设备 |
| WO2022160089A1 (en) * | 2021-01-26 | 2022-08-04 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and fabrication method thereof |
| EP4289994A4 (en) * | 2021-02-05 | 2024-12-25 | Shin-Etsu Handotai Co., Ltd. | NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME |
| JP7549549B2 (ja) * | 2021-02-26 | 2024-09-11 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
| US12557322B2 (en) | 2021-05-17 | 2026-02-17 | Wolfspeed, Inc. | Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof |
| CN113948391B (zh) * | 2021-08-30 | 2023-11-21 | 西安电子科技大学 | 一种硅基AlGaN/GaN HEMT器件及制备方法 |
| US20240387170A1 (en) | 2021-09-21 | 2024-11-21 | Shin-Etsu Handotai Co., Ltd. | Nitride semiconductor substrate and method for manufacturing same |
| JP7755451B2 (ja) * | 2021-10-27 | 2025-10-16 | 信越化学工業株式会社 | エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法 |
| CN114262937B (zh) * | 2021-12-20 | 2023-03-28 | 中电化合物半导体有限公司 | 一种氮化镓外延结构的制备方法 |
| JP7657530B2 (ja) * | 2021-12-28 | 2025-04-07 | 信越化学工業株式会社 | 高特性エピタキシャル成長用基板とその製造方法 |
| CN114566470A (zh) * | 2022-02-11 | 2022-05-31 | 东南大学苏州研究院 | 工程衬底及其制备方法 |
| CN114864379B (zh) * | 2022-04-22 | 2026-01-27 | 江苏第三代半导体研究院有限公司 | 改善位错缺陷的外延方法及其外延片 |
| JP2024060665A (ja) | 2022-10-20 | 2024-05-07 | 信越半導体株式会社 | 窒化物半導体エピタキシャルウエーハの製造方法及び窒化物半導体エピタキシャルウエーハ用複合基板 |
| US12584242B2 (en) * | 2023-02-07 | 2026-03-24 | Robert Bosch Gmbh | Deformation compensation method for growing thick galium nitride on silicon substrate |
| CN116072724B (zh) * | 2023-03-07 | 2023-06-27 | 珠海镓未来科技有限公司 | 一种半导体功率器件及其制备方法 |
| US20240339320A1 (en) * | 2023-04-07 | 2024-10-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ceramic substrate structures and methods of forming the same |
| JP2025007662A (ja) | 2023-07-03 | 2025-01-17 | 信越半導体株式会社 | ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法 |
| JP2025030515A (ja) * | 2023-08-23 | 2025-03-07 | 信越半導体株式会社 | 窒化物半導体エピタキシャルウエーハ及び窒化物半導体エピタキシャルウエーハの製造方法 |
| DE102024203423A1 (de) * | 2024-04-12 | 2025-10-16 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren und Strukturen zum Reduzieren von Verformungen von Gallium-nitrid(GaN)-Vorrichtungen |
| CN118712226B (zh) * | 2024-08-29 | 2024-12-10 | 江西兆驰半导体有限公司 | 高电子迁移率晶体管外延片及其制备方法、hemt |
| CN119725049B (zh) * | 2024-12-11 | 2025-12-19 | 南京大学 | 一种分层掺杂的GaN光电阴极 |
| CN119767735A (zh) * | 2025-03-05 | 2025-04-04 | 中科(深圳)无线半导体有限公司 | 一种氮化镓半导体芯片的外延结构 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044124A (ja) * | 1999-07-28 | 2001-02-16 | Sony Corp | エピタキシャル層の形成方法 |
| JP3274674B2 (ja) * | 2000-05-16 | 2002-04-15 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
| FR2871172B1 (fr) * | 2004-06-03 | 2006-09-22 | Soitec Silicon On Insulator | Support d'epitaxie hybride et son procede de fabrication |
| WO2007133603A2 (en) | 2006-05-09 | 2007-11-22 | The Regents Of The University Of California | In-situ defect reduction techniques for nonpolar and semipolar (ai, ga, in)n |
| US9082892B2 (en) | 2007-06-11 | 2015-07-14 | Manulius IP, Inc. | GaN Based LED having reduced thickness and method for making the same |
| US20090278233A1 (en) | 2007-07-26 | 2009-11-12 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
| US8030666B2 (en) | 2008-04-16 | 2011-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Group-III nitride epitaxial layer on silicon substrate |
| JP2010192745A (ja) | 2009-02-19 | 2010-09-02 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
| US9012253B2 (en) | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
| US8264047B2 (en) * | 2010-05-10 | 2012-09-11 | Infineon Technologies Austria Ag | Semiconductor component with a trench edge termination |
| WO2012020676A1 (ja) * | 2010-08-10 | 2012-02-16 | 株式会社 東芝 | ＧａＮベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたＧａＮベース半導体の製造方法 |
| KR20120052160A (ko) * | 2010-11-15 | 2012-05-23 | 엔지케이 인슐레이터 엘티디 | 복합 기판 및 복합 기판의 제조 방법 |
| CN102544086B (zh) * | 2010-12-24 | 2015-04-01 | 山东华光光电子有限公司 | 氮化镓基高电子迁移率晶体管及其制作方法 |
| JP2013069935A (ja) | 2011-09-23 | 2013-04-18 | Sumitomo Chemical Co Ltd | 半導体基板の製造方法 |
| JP6130995B2 (ja) * | 2012-02-20 | 2017-05-17 | サンケン電気株式会社 | エピタキシャル基板及び半導体装置 |
| RU2620865C2 (ru) * | 2012-06-25 | 2017-05-30 | Конинклейке Филипс Н.В. | Система и способ трехмерных ультразвуковых измерений объемных областей |
| US9147803B2 (en) | 2013-01-02 | 2015-09-29 | Micron Technology, Inc. | Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods |
| US9082692B2 (en) | 2013-01-02 | 2015-07-14 | Micron Technology, Inc. | Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices |
| KR20150085724A (ko) | 2014-01-16 | 2015-07-24 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
| JP2016035949A (ja) | 2014-08-01 | 2016-03-17 | 日本電信電話株式会社 | 窒化物半導体装置の製造方法 |
| JP2016058693A (ja) | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 半導体装置、半導体ウェーハ、及び、半導体装置の製造方法 |
| CN104600109A (zh) * | 2015-01-07 | 2015-05-06 | 中山大学 | 一种高耐压氮化物半导体外延结构及其生长方法 |
| CN105047695B (zh) * | 2015-06-10 | 2018-09-25 | 上海新傲科技股份有限公司 | 用于高电子迁移率晶体管的高阻衬底以及生长方法 |
| KR102700750B1 (ko) * | 2015-12-04 | 2024-08-28 | 큐로미스, 인크 | 가공된 기판 상의 와이드 밴드 갭 디바이스 집적 회로 아키텍처 |
| TWI732925B (zh) * | 2016-08-23 | 2021-07-11 | 美商克若密斯股份有限公司 | 與工程基板整合之電力元件 |
| US10355120B2 (en) | 2017-01-18 | 2019-07-16 | QROMIS, Inc. | Gallium nitride epitaxial structures for power devices |
-
2018
- 2018-01-08 US US15/864,977 patent/US10355120B2/en active Active
- 2018-01-10 SG SG11201906133PA patent/SG11201906133PA/en unknown
- 2018-01-10 KR KR1020227035940A patent/KR102595284B1/ko active Active
- 2018-01-10 CN CN201880007184.0A patent/CN110177905B/zh active Active
- 2018-01-10 CN CN202111481180.6A patent/CN114156181B/zh active Active
- 2018-01-10 KR KR1020247007266A patent/KR102742200B1/ko active Active
- 2018-01-10 KR KR1020237036400A patent/KR102645364B1/ko active Active
- 2018-01-10 KR KR1020197024120A patent/KR102458634B1/ko active Active
- 2018-01-10 EP EP18741122.8A patent/EP3571336A4/en active Pending
- 2018-01-10 WO PCT/US2018/013206 patent/WO2018136278A1/en not_active Ceased
- 2018-01-10 JP JP2019538435A patent/JP7105239B2/ja active Active
- 2018-01-15 TW TW107101365A patent/TWI781132B/zh active
- 2018-01-15 TW TW111137206A patent/TWI907736B/zh active
-
2019
- 2019-06-03 US US16/430,235 patent/US10833186B2/en active Active
-
2020
- 2020-10-01 US US17/061,241 patent/US11699750B2/en active Active
-
2022
- 2022-07-11 JP JP2022110889A patent/JP7565318B2/ja active Active
-
2023
- 2023-04-17 US US18/135,648 patent/US20230261101A1/en active Pending
-
2024
- 2024-09-30 JP JP2024170048A patent/JP2025023912A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2025023912A5 (https=) | ||
| CN110177905B (zh) | 用于功率器件的氮化镓外延结构 | |
| JP5441297B2 (ja) | Ｉｉｉ−ｖ族発光デバイス | |
| JP4177097B2 (ja) | Ｉｉｉ−ｖ窒化物半導体ベースの放射線を発する半導体チップを製造する方法および放射線を発する半導体チップ | |
| CN101562223B (zh) | 半导体元件 | |
| US10090172B2 (en) | Semiconductor device with high thermal conductivity substrate and process for making the same | |
| CN104115258B (zh) | 外延基板、半导体装置及半导体装置的制造方法 | |
| JP2019523994A5 (https=) | ||
| CN103828030B (zh) | 半导体元件、hemt元件、以及半导体元件的制造方法 | |
| KR20110113822A (ko) | 결정 성장용 기판 어셈블리 및 이를 이용한 발광소자의 제조방법 | |
| KR20240150453A (ko) | 수직 질화 갈륨 쇼트키 다이오드 | |
| JP2021013007A5 (https=) | ||
| JP2013504197A5 (https=) | ||
| TW201029231A (en) | Laminate substrate for semiconductor chip | |
| JP5110762B2 (ja) | 半導体積層構造およびｈｅｍｔ素子 | |
| TWI783830B (zh) | 半導體裝置 | |
| JP2007095858A (ja) | 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス | |
| JP6318187B2 (ja) | 半導体デバイス | |
| JP2022131086A5 (https=) | ||
| JP5972917B2 (ja) | 空間的に閉じ込められた誘電体領域を含む半導体構造 | |
| JP5806545B2 (ja) | 半導体素子、ｈｅｍｔ素子、および半導体素子の製造方法 | |
| JP5546133B2 (ja) | 半導体電子デバイス | |
| JPWO2023038129A5 (https=) | ||
| TW201415663A (zh) | 氮化物半導體裝置 | |
| JP2007173369A (ja) | 半導体発光素子及び半導体発光素子の製造方法 |