JP6318187B2 - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
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- JP6318187B2 JP6318187B2 JP2016065261A JP2016065261A JP6318187B2 JP 6318187 B2 JP6318187 B2 JP 6318187B2 JP 2016065261 A JP2016065261 A JP 2016065261A JP 2016065261 A JP2016065261 A JP 2016065261A JP 6318187 B2 JP6318187 B2 JP 6318187B2
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- 239000004065 semiconductor Substances 0.000 title claims description 116
- 239000002019 doping agent Substances 0.000 claims description 108
- 239000000758 substrate Substances 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 230000007423 decrease Effects 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 20
- 230000015556 catabolic process Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- DJPURDPSZFLWGC-UHFFFAOYSA-N alumanylidyneborane Chemical compound [Al]#B DJPURDPSZFLWGC-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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Description
11 基板
13 初期層
20 バッファ積層構造
21 ベース層
23 ドープ層
31 電子輸送層
33 電子供給層
40 半導体デバイス
50 バッファ積層構造
51A 第1ベース層
51B 第2ベース層
51C 第3ベース層
53A 第1ドープ層
53B 第2ドープ層
60 半導体デバイス
70 バッファ積層構造
Claims (26)
- 基板と、
前記基板上に位置し、窒化アルミニウムを含む初期層と、
前記初期層上に位置するバッファ積層構造とを備え、該バッファ積層構造は、複数のベース層、及び隣接する2つの前記ベース層間に配置された少なくとも1つのドープ層を備え、前記ベース層の各々が窒化アルミニウムガリウムを含み、前記少なくとも1つのドープ層が窒化ホウ素アルミニウムガリウムを含む半導体デバイスであって、
前記バッファ積層構造において、最下部から最上部に向かってアルミニウムの濃度が次第に減少し、前記ベース層内のガリウムの濃度が次第に増加し、前記ベース層は炭素を実質的に含有せず、前記少なくとも1つのドープ層内のドーパントが炭素または鉄を含み、
前記バッファ積層構造内の前記ドーパントの濃度が不連続に変化する半導体デバイス。 - 前記少なくとも1つのドープ層の数が複数であり、前記ドープ層と前記ベース層とが前
記初期層上に交互に積層されている、請求項1に記載の半導体デバイス。 - 前記少なくとも1つのドープ層の厚さが10オングストローム〜1ミクロンである、請
求項1または2に記載の半導体デバイス。 - 前記ベース層の各々の厚さに対する前記少なくとも1つのドープ層の厚さの比率が0.001〜1.0である、請求項1〜3のいずれかに記載の半導体デバイス。
- 各々の前記少なくとも1つのドープ層内の前記ドーパントの濃度が1×1018/cm3〜
1×1020/cm3である、請求項1〜4のいずれかに記載の半導体デバイス。 - 各々の前記ベース層内の前記ドーパントの濃度が1×1018/cm3よりも低い、請求項
1〜5のいずれかに記載の半導体デバイス。 - 前記バッファ積層構造内の前記ドーパントの濃度が波状に変化する、請求項1〜6のいずれかに記載の半導体デバイス。
- 前記バッファ積層構造内の前記ドーパントの濃度が、前記ベース層から前記少なくとも1つのドープ層に向かって増加する、請求項1〜7のいずれかに記載の半導体デバイス。
- 前記バッファ積層構造内の前記ドーパントの濃度が、前記少なくとも1つのドープ層から前記ベース層に向かって減少する、請求項1〜8のいずれかに記載の半導体デバイス。
- 前記バッファ積層構造内の前記ベース層の1つが、前記初期層と接触する、請求項1〜9のいずれかに記載の半導体デバイス。
- 前記バッファ積層構造上に位置する電子輸送層をさらに備え、前記バッファ積層構造内の前記ベース層の1つが前記電子輸送層と接触する、請求項1〜10のいずれかに記載の半導体デバイス。
- 基板と、
前記基板上に位置し、窒化アルミニウムを含む初期層と、前記初期層上に位置する複数のバッファ積層構造とを備えた半導体デバイスであって、
前記バッファ積層構造の少なくとも1つが、第1ベース層、第1ドープ層、及び第2ベース層を備え、
前記第1ドープ層が前記第1ベース層と前記第2ベース層との間に配置され、
前記第1ベース層及び前記第2ベース層のアルミニウムの濃度が最下部から最上部に向かって次第に減少し、
前記第1ベース層及び前記第2ベース層が窒化アルミニウムガリウムを含み、前記第1ドープ層が窒化ホウ素アルミニウムガリウムを含み、前記第1ドープ層内のドーパントが炭素または鉄を含み、前記第1ベース層及び前記第2ベース層が炭素を実質的に含有せず、
前記バッファ積層構造内の前記ドーパントの濃度が不連続に変化する半導体デバイス。 - 前記バッファ積層構造の各々が、前記第1ベース層と前記第2ベース層との間に配置された第1ドープ層を備えている、請求項12に記載の半導体デバイス。
- 前記第1ドープ層の厚さが10オングストローム〜1ミクロンである、請求項12または13に記載の半導体デバイス。
- 前記第1ベース層の厚さに対する前記第1ドープ層の厚さの比率が0.001〜1.0
である、請求項12〜14のいずれかに記載の半導体デバイス。 - 前記第2ベース層の厚さに対する前記第1ドープ層の厚さの比率が0.001〜1.0
である、請求項12〜15のいずれかに記載の半導体デバイス。 - 前記第1ドープ層内の前記ドーパントの濃度が1×1018/cm3〜1×1020/cm3であ
る、請求項12〜16のいずれかに記載の半導体デバイス。 - 前記第1ベース層及び前記第2ベース層内の炭素の濃度が1×1018/cm3よりも低い
、請求項12〜17のいずれかに記載の半導体デバイス。 - 前記バッファ積層構造において、前記第1ベース層及び前記第2ベース層のアルミニウムの濃度が次第に減少し、前記第1ベース層及び前記第2ベース層のガリウムの濃度が次第に増加する、請求項12〜18のいずれかに記載の半導体デバイス。
- 前記バッファ積層構造内の前記ドーパントの濃度が波状に変化する、請求項12〜19のいずれかに記載の半導体デバイス。
- 前記少なくとも1つの前記バッファ積層構造内の前記ドーパントの濃度が、前記第1ベース層から前記第1ドープ層に向かって増加する、請求項12〜20のいずれかに記載の半導体デバイス。
- 前記少なくとも1つの前記バッファ積層構造内の前記ドーパントの濃度が、前記第1ドープ層から前記第2ベース層に向かって減少する、請求項12〜21のいずれかに記載の半導体デバイス。
- 前記少なくとも1つの前記バッファ積層構造内の前記第1ベース層が、前記初期層と接触する、請求項12〜22のいずれかに記載の半導体デバイス。
- 前記少なくとも1つの前記バッファ積層構造上に位置する電子輸送層をさらに備え、前記少なくとも1つの前記バッファ積層構造内の前記第2ベース層が前記電子輸送層と接触する、請求項12〜23のいずれかに記載の半導体デバイス。
- 前記少なくとも1つの前記バッファ積層構造が第2ドープ層及び第3ベース層をさらに備え、前記第2ドープ層は前記第2ベース層と前記第3ベース層との間に配置されている、請求項12〜24のいずれかに記載の半導体デバイス。
- 前記第2ドープ層が窒化ホウ素アルミニウムガリウムを含み、前記第3ベース層が炭素を実質的に含有しない、請求項25に記載の半導体デバイス。
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