JP2022131086A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2022131086A5 JP2022131086A5 JP2021029830A JP2021029830A JP2022131086A5 JP 2022131086 A5 JP2022131086 A5 JP 2022131086A5 JP 2021029830 A JP2021029830 A JP 2021029830A JP 2021029830 A JP2021029830 A JP 2021029830A JP 2022131086 A5 JP2022131086 A5 JP 2022131086A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ceramic
- core
- semiconductor layer
- ceramic wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021029830A JP7549549B2 (ja) | 2021-02-26 | 2021-02-26 | 窒化物半導体基板およびその製造方法 |
| US18/276,520 US20240117525A1 (en) | 2021-02-26 | 2022-01-26 | Nitride semiconductor substrate and method for producing the same |
| CN202280014723.XA CN117015840A (zh) | 2021-02-26 | 2022-01-26 | 氮化物半导体基板及其制造方法 |
| PCT/JP2022/002747 WO2022181163A1 (ja) | 2021-02-26 | 2022-01-26 | 窒化物半導体基板およびその製造方法 |
| EP22759205.2A EP4299802A4 (en) | 2021-02-26 | 2022-01-26 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF |
| TW111104226A TWI921460B (zh) | 2021-02-26 | 2022-02-07 | 氮化物半導體基板及其製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021029830A JP7549549B2 (ja) | 2021-02-26 | 2021-02-26 | 窒化物半導体基板およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022131086A JP2022131086A (ja) | 2022-09-07 |
| JP2022131086A5 true JP2022131086A5 (https=) | 2023-08-16 |
| JP7549549B2 JP7549549B2 (ja) | 2024-09-11 |
Family
ID=83049090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021029830A Active JP7549549B2 (ja) | 2021-02-26 | 2021-02-26 | 窒化物半導体基板およびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240117525A1 (https=) |
| EP (1) | EP4299802A4 (https=) |
| JP (1) | JP7549549B2 (https=) |
| CN (1) | CN117015840A (https=) |
| WO (1) | WO2022181163A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023063046A1 (ja) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
| JP2025030515A (ja) * | 2023-08-23 | 2025-03-07 | 信越半導体株式会社 | 窒化物半導体エピタキシャルウエーハ及び窒化物半導体エピタキシャルウエーハの製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005203666A (ja) * | 2004-01-19 | 2005-07-28 | Kansai Electric Power Co Inc:The | 化合物半導体デバイスの製造方法 |
| JP2006196713A (ja) * | 2005-01-13 | 2006-07-27 | National Institute Of Advanced Industrial & Technology | 半導体装置及びその作製方法並びに重水素処理装置 |
| JP2007087992A (ja) * | 2005-09-20 | 2007-04-05 | Showa Denko Kk | 半導体素子および半導体素子製造方法 |
| US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
| JP5817127B2 (ja) * | 2011-01-21 | 2015-11-18 | 株式会社Sumco | 半導体基板及びその製造方法 |
| US10297445B2 (en) * | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
| WO2017218536A1 (en) * | 2016-06-14 | 2017-12-21 | Quora Technology, Inc. | Engineered substrate structure for power and rf applications |
| TWI732925B (zh) * | 2016-08-23 | 2021-07-11 | 美商克若密斯股份有限公司 | 與工程基板整合之電力元件 |
| US10355120B2 (en) * | 2017-01-18 | 2019-07-16 | QROMIS, Inc. | Gallium nitride epitaxial structures for power devices |
| JP2020098839A (ja) | 2018-12-17 | 2020-06-25 | 信越半導体株式会社 | 窒化物半導体ウェーハの製造方法および窒化物半導体ウェーハ |
| TWI692869B (zh) * | 2019-05-03 | 2020-05-01 | 世界先進積體電路股份有限公司 | 基底及其製造方法 |
-
2021
- 2021-02-26 JP JP2021029830A patent/JP7549549B2/ja active Active
-
2022
- 2022-01-26 WO PCT/JP2022/002747 patent/WO2022181163A1/ja not_active Ceased
- 2022-01-26 EP EP22759205.2A patent/EP4299802A4/en active Pending
- 2022-01-26 CN CN202280014723.XA patent/CN117015840A/zh active Pending
- 2022-01-26 US US18/276,520 patent/US20240117525A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2025023912A5 (https=) | ||
| KR101227923B1 (ko) | 다이아몬드 층을 갖는 갈륨 질화물 층 제조 | |
| TWI517383B (zh) | 在背側通孔中直接生長鑽石用於ＧａＮ高電子遷移率電晶體裝置 | |
| KR101227925B1 (ko) | 다이아몬드 층을 갖는 갈륨 질화물 장치 제조 | |
| JP2008538658A5 (https=) | ||
| JP6959919B2 (ja) | 加工基板上のワイドバンドギャップデバイス集積回路アーキテクチャ | |
| JP2019523994A5 (https=) | ||
| JP6319849B2 (ja) | 単結晶材料の利用効率を改善した擬似基板 | |
| JP2007073986A5 (https=) | ||
| JP2018514498A (ja) | ダイヤモンド−半導体複合基板を製造する方法 | |
| JP2022131086A5 (https=) | ||
| JP2019153603A (ja) | 半導体基板及びその製造方法 | |
| TW202205369A (zh) | 氮化鎵/鑽石晶圓 | |
| CN110291645A (zh) | 用于垂直型功率器件的方法和系统 | |
| CN102916044A (zh) | 高电子迁移率晶体管及其制造方法 | |
| JP2021013007A5 (https=) | ||
| JP5475286B2 (ja) | 寄生電流経路を閉塞するために交互の高温層および低温層を用いる超格子の製造方法 | |
| CN111009580A (zh) | 高电子迁移率晶体管元件及其制造方法 | |
| TWI908675B (zh) | 半導體裝置之製造方法 | |
| SG10201802435TA (en) | Gallium nitride semiconductor structure and process for fabricating thereof | |
| TW201544441A (zh) | 半導體之配置及其形成方法 | |
| CN113707770A (zh) | 一种硅衬底GaN的加工工艺 | |
| CN113841223B (zh) | 半导体基板的制造方法和半导体装置的制造方法 | |
| CN108847392A (zh) | 金刚石基氮化镓器件制造方法 | |
| US20170221705A1 (en) | Composite substrate, semiconductor device, and method for manufacturing thereof |