JP2018514498A - ダイヤモンド−半導体複合基板を製造する方法 - Google Patents
ダイヤモンド−半導体複合基板を製造する方法 Download PDFInfo
- Publication number
- JP2018514498A JP2018514498A JP2017558437A JP2017558437A JP2018514498A JP 2018514498 A JP2018514498 A JP 2018514498A JP 2017558437 A JP2017558437 A JP 2017558437A JP 2017558437 A JP2017558437 A JP 2017558437A JP 2018514498 A JP2018514498 A JP 2018514498A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- compound semiconductor
- carrier substrate
- substrate
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 130
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000002131 composite material Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 118
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 105
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 53
- 239000010432 diamond Substances 0.000 claims abstract description 53
- 150000001875 compounds Chemical class 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000006911 nucleation Effects 0.000 claims abstract description 20
- 238000010899 nucleation Methods 0.000 claims abstract description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 18
- 239000011358 absorbing material Substances 0.000 claims abstract description 15
- 229910002601 GaN Inorganic materials 0.000 claims description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 35
- 238000000926 separation method Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims 1
- 238000010000 carbonizing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 37
- 239000013078 crystal Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000001311 chemical methods and process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29193—Material with a principal constituent of the material being a solid not provided for in groups H01L2224/291 - H01L2224/29191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83052—Detaching layer connectors, e.g. after testing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/83224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10323—Aluminium nitride [AlN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10344—Aluminium gallium nitride [AlGaN]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
(i)化合物半導体が上に配置されたネイティブ炭化ケイ素基板を有するネイティブ半導体ウエハから出発するステップと、
(ii)上記化合物半導体に炭化ケイ素キャリア基板を接合するステップと、
(iii)上記ネイティブ炭化ケイ素基板を除去するステップと、
(iv)上記化合物半導体の上に核生成層を形成するステップと、
(v)上記核生成層上に多結晶化学気相成長(CVD)ダイヤモンドを成長させて、複合ダイヤモンド−化合物半導体−炭化ケイ素ウエハを形成するステップと、
(vi)上記炭化ケイ素キャリア基板を除去して、上記核生成層を介して上記多結晶CVDダイヤモンドに接合された上記化合物半導体を有する層状構造を達成するステップと
を有し、
ステップ(ii)において、上記炭化ケイ素キャリア基板は、上記炭化ケイ素キャリア基板の厚さよりも短いコヒーレンス長のレーザ光を吸収するレーザ吸収材料を介して、上記化合物半導体に接合され、
ステップ(vi)において、上記炭化ケイ素キャリア基板は、
複合ダイヤモンド−化合物半導体−炭化ケイ素ウエハを少なくとも100℃の温度まで加熱し、
上記炭化ケイ素キャリア基板の厚さよりも短いコヒーレンス長を持つレーザ光を、上記炭化ケイ素キャリア基板を通じて導き、該レーザ光が上記レーザ吸収材料によって吸収され、そして
上記レーザ光への曝露後に上記複合ダイヤモンド−化合物半導体−炭化ケイ素ウエハを冷却して、上記化合物半導体からの上記炭化ケイ素キャリア基板の分離を生じさせる、
ことによって、上記化合物半導体から除去される。
複合ダイヤモンド−化合物半導体−炭化ケイ素ウエハを少なくとも100℃の温度(例えば、少なくとも150℃、200℃、300℃、400℃、又は450℃)まで加熱し、
炭化ケイ素キャリア基板の厚さよりも短いコヒーレンス長を持つレーザ光を、炭化ケイ素キャリア基板16を通じて導き、該レーザ光がレーザ吸収材料14によって吸収され、そして
レーザ光への曝露後に複合ダイヤモンド−化合物半導体−炭化ケイ素ウエハを冷却して、化合物半導体12からの炭化ケイ素キャリア基板16の分離を生じさせる、
ことを有する。
Lc=λ2/Δλ
によって与えられる。ここで、λは光の波長であり、Δλはスペクトル帯域幅である。ほぼ変形制限されたパルスでは、コヒーレンス長とパルス幅は直接的にLc≒cτによって関係付けられる。例えば、100fsレーザパルスは、およそ30μmのコヒーレンス長を有する。
Claims (15)
- 半導体・オン・ダイヤモンド複合基板を製造する方法であって、当該方法は、
(i)化合物半導体が上に配置されたネイティブ炭化ケイ素基板を有するネイティブ半導体ウエハから出発するステップと、
(ii)前記化合物半導体に炭化ケイ素キャリア基板を接合するステップと、
(iii)前記ネイティブ炭化ケイ素基板を除去するステップと、
(iv)前記化合物半導体の上に核生成層を形成するステップと、
(v)前記核生成層上に多結晶化学気相成長(CVD)ダイヤモンドを成長させて、複合ダイヤモンド−化合物半導体−炭化ケイ素ウエハを形成するステップと、
(vi)前記炭化ケイ素キャリア基板を除去して、前記核生成層を介して前記多結晶CVDダイヤモンドに接合された前記化合物半導体を有する層状構造を達成するステップと
を有し、
ステップ(ii)において、前記炭化ケイ素キャリア基板は、前記炭化ケイ素キャリア基板の厚さよりも短いコヒーレンス長のレーザ光を吸収するレーザ吸収材料を介して、前記化合物半導体に接合され、
ステップ(vi)において、前記炭化ケイ素キャリア基板は、
複合ダイヤモンド−化合物半導体−炭化ケイ素ウエハを少なくとも100℃の温度まで加熱し、
前記炭化ケイ素キャリア基板の厚さよりも短いコヒーレンス長を持つレーザ光を、前記炭化ケイ素キャリア基板を通じて導き、該レーザ光が前記レーザ吸収材料によって吸収され、そして
前記レーザ光への曝露後に前記複合ダイヤモンド−化合物半導体−炭化ケイ素ウエハを冷却して、前記化合物半導体からの前記炭化ケイ素キャリア基板の分離を生じさせる、
ことによって、前記化合物半導体から除去される、
方法。 - 前記炭化ケイ素キャリア基板と前記化合物半導体との間に設けられる前記レーザ吸収材料はセラミック材料である、請求項1に記載の方法。
- 前記炭化ケイ素キャリア基板と前記化合物半導体との間に設けられる前記レーザ吸収材料は多結晶シリコン又は非晶質シリコンである、請求項1に記載の方法。
- 前記レーザ吸収材料は、前記炭化ケイ素キャリア基板を前記化合物半導体に接合するのに先立って、前記炭化ケイ素キャリア基板上にコーティングされる、請求項1乃至3の何れかに記載の方法。
- 前記炭化ケイ素キャリア基板は、100マイクロメートルから2000マイクロメートルの範囲内の厚さを有する、請求項1乃至4の何れかに記載の方法。
- 前記炭化ケイ素キャリア基板は、少なくとも50mmの直径を有する、請求項1乃至5の何れかに記載の方法。
- 前記ネイティブ炭化ケイ素基板は、
前記ネイティブ炭化ケイ素基板の大部分を機械的にラッピング又はポリッシングすることと、
前記ネイティブ炭化ケイ素基板の残部をドライエッチングすることと、
を有する二段階プロセスを用いて除去される、請求項1乃至6の何れかに記載の方法。 - 前記核生成層は、ナノ結晶ダイヤモンド、炭化ケイ素、シリコン、窒化ケイ素、二酸化ケイ素、窒化アルミニウム、酸化マグネシウム、窒化ホウ素、又は酸化ベリリウムのうちの1つ以上を有する、請求項1乃至7の何れかに記載の方法。
- 前記多結晶CVDダイヤモンドは、少なくとも50マイクロメートルの厚さまで成長される、請求項1乃至8の何れかに記載の方法。
- ステップ(vi)において、前記複合ダイヤモンド−化合物半導体−炭化ケイ素ウエハは、100℃から550℃の範囲内の温度まで加熱される、請求項1乃至9の何れかに記載の方法。
- 前記レーザ光の前記コヒーレンス長は、10マイクロメートルから400マイクロメートルの範囲内である、請求項1乃至10の何れかに記載の方法。
- 前記レーザ光は、400nmから1200nmの範囲内の波長を有する、請求項1乃至11の何れかに記載の方法。
- 前記レーザ光は、1フェムト秒から1000フェムト秒の範囲内のパルス幅を有する、請求項1乃至12の何れかに記載の方法。
- 前記レーザ吸収材料によって吸収されるように前記レーザ光を前記炭化ケイ素キャリア基板を通じて導くステップは、冷却に先立って前記レーザ吸収材料の層全体がレーザ光に曝されるまで前記炭化ケイ素キャリア基板の上でレーザビームを移動させることを有する、請求項1乃至13の何れかに記載の方法。
- 前記化合物半導体は、窒化ガリウム、窒化アルミニウム、窒化アルミニウムガリウム、及び窒化インジウムアルミニウムガリウムのうちの1つ以上を有する、請求項1乃至14の何れかに記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562161636P | 2015-05-14 | 2015-05-14 | |
US62/161,636 | 2015-05-14 | ||
GBGB1509766.0A GB201509766D0 (en) | 2015-06-05 | 2015-06-05 | Method of fabricating diamond-semiconductor composite substrates |
GB1509766.0 | 2015-06-05 | ||
PCT/EP2016/060493 WO2016180849A1 (en) | 2015-05-14 | 2016-05-11 | Method of fabricating diamond-semiconductor composite substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018514498A true JP2018514498A (ja) | 2018-06-07 |
JP6425835B2 JP6425835B2 (ja) | 2018-11-21 |
Family
ID=53784999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017558437A Active JP6425835B2 (ja) | 2015-05-14 | 2016-05-11 | ダイヤモンド−半導体複合基板を製造する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10043700B2 (ja) |
JP (1) | JP6425835B2 (ja) |
KR (1) | KR102020432B1 (ja) |
CN (1) | CN107636800B (ja) |
DE (1) | DE112016002170T5 (ja) |
GB (2) | GB201509766D0 (ja) |
WO (1) | WO2016180849A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023063176A1 (ja) * | 2021-10-12 | 2023-04-20 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
WO2024058180A1 (ja) * | 2022-09-12 | 2024-03-21 | 公立大学法人大阪 | 半導体装置形成用基板、半導体積層構造体、半導体装置、半導体装置形成用基板の製造方法、半導体積層構造体の製造方法及び半導体装置の製造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6638823B2 (ja) * | 2016-10-24 | 2020-01-29 | 三菱電機株式会社 | 半導体装置 |
US10128107B1 (en) * | 2017-08-31 | 2018-11-13 | Rfhic Corporation | Wafers having III-Nitride and diamond layers |
EP3556454B1 (en) | 2018-04-16 | 2024-05-29 | IMEC vzw | Formation of diamond membranes |
CN108847392B (zh) * | 2018-06-26 | 2019-12-03 | 苏州汉骅半导体有限公司 | 金刚石基氮化镓器件制造方法 |
GB201814192D0 (en) | 2018-08-31 | 2018-10-17 | Univ Bristol | A semiconductor on diamond substrate, percursor for use in preparing a semiconductor on diamond substrate, and methods of making the same |
US11652146B2 (en) | 2020-02-07 | 2023-05-16 | Rfhic Corporation | Method of forming a semiconductor wafer containing a gallium-nitride layer and two diamond layers |
KR102273305B1 (ko) * | 2020-04-23 | 2021-07-06 | 알에프에이치아이씨 주식회사 | 신뢰성을 개선한 다이아몬드 기판 상 질화 갈륨 반도체 구조체 및 이를 제조하는 공정 |
CN112750690A (zh) * | 2021-01-18 | 2021-05-04 | 西安电子科技大学 | 金刚石衬底上的N极性面GaN/InAlN异质结及制备方法 |
CN113151898B (zh) * | 2021-02-18 | 2021-10-15 | 北京科技大学 | 一种嵌入式金刚石基碳化硅复合衬底的制备方法 |
CN113862781B (zh) * | 2021-09-22 | 2022-12-20 | 东莞市天域半导体科技有限公司 | 一种碳化硅外延晶片生长用样品托上的复合涂层制备方法 |
CN115491764B (zh) * | 2022-09-29 | 2024-01-30 | 中国电子科技集团公司第十三研究所 | 一种剥离外延金刚石与GaN材料的方法 |
CN117577518A (zh) * | 2023-11-20 | 2024-02-20 | 中国科学院上海微系统与信息技术研究所 | 金刚石基氧化镓半导体结构及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002338398A (ja) * | 2001-05-18 | 2002-11-27 | Matsushita Electric Ind Co Ltd | 窒化物半導体基板の製造方法および窒化物半導体装置の製造方法 |
JP2006306719A (ja) * | 2005-04-27 | 2006-11-09 | Kinik Co | ダイヤモンド基板とその製造方法 |
US20060266280A1 (en) * | 2005-04-13 | 2006-11-30 | Daniel Francis | Semiconductor Devices Having Gallium Nitride Epilayers on Diamond Substrates |
JP2011517085A (ja) * | 2008-04-01 | 2011-05-26 | ソン,ジュンオ | 発光素子及びその製造方法 |
CN102664221A (zh) * | 2012-05-18 | 2012-09-12 | 杭州士兰明芯科技有限公司 | Led衬底的剥离方法 |
JP2013513487A (ja) * | 2009-12-09 | 2013-04-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | ビームスプリッタを用いたレーザリフトオフ法のための方法および装置 |
JP2013118272A (ja) * | 2011-12-02 | 2013-06-13 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体デバイスの製造方法 |
US20140141595A1 (en) * | 2005-04-13 | 2014-05-22 | Element Six Technologies Us Corporation | Gallium-nitride-on-diamond wafers and devices, and methods of manufacture |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4809632B2 (ja) * | 2005-06-01 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
GB2484506A (en) * | 2010-10-13 | 2012-04-18 | Univ Warwick | Heterogrowth |
CN104285001A (zh) * | 2012-02-29 | 2015-01-14 | 六号元素技术美国公司 | 金刚石载氮化镓晶片以及制造设备和制造方法 |
CN202655797U (zh) * | 2012-05-18 | 2013-01-09 | 杭州士兰明芯科技有限公司 | 激光剥离led衬底的系统 |
CN102699537B (zh) * | 2012-05-18 | 2015-11-04 | 杭州士兰明芯科技有限公司 | 激光剥离led衬底的系统及方法 |
-
2015
- 2015-06-05 GB GBGB1509766.0A patent/GB201509766D0/en not_active Ceased
-
2016
- 2016-05-11 CN CN201680027914.4A patent/CN107636800B/zh active Active
- 2016-05-11 GB GB1608216.6A patent/GB2539780B/en active Active
- 2016-05-11 KR KR1020177032831A patent/KR102020432B1/ko active IP Right Grant
- 2016-05-11 JP JP2017558437A patent/JP6425835B2/ja active Active
- 2016-05-11 US US15/570,361 patent/US10043700B2/en active Active
- 2016-05-11 DE DE112016002170.4T patent/DE112016002170T5/de active Pending
- 2016-05-11 WO PCT/EP2016/060493 patent/WO2016180849A1/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002338398A (ja) * | 2001-05-18 | 2002-11-27 | Matsushita Electric Ind Co Ltd | 窒化物半導体基板の製造方法および窒化物半導体装置の製造方法 |
US20060266280A1 (en) * | 2005-04-13 | 2006-11-30 | Daniel Francis | Semiconductor Devices Having Gallium Nitride Epilayers on Diamond Substrates |
US20140141595A1 (en) * | 2005-04-13 | 2014-05-22 | Element Six Technologies Us Corporation | Gallium-nitride-on-diamond wafers and devices, and methods of manufacture |
JP2006306719A (ja) * | 2005-04-27 | 2006-11-09 | Kinik Co | ダイヤモンド基板とその製造方法 |
JP2011517085A (ja) * | 2008-04-01 | 2011-05-26 | ソン,ジュンオ | 発光素子及びその製造方法 |
JP2013513487A (ja) * | 2009-12-09 | 2013-04-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | ビームスプリッタを用いたレーザリフトオフ法のための方法および装置 |
JP2013118272A (ja) * | 2011-12-02 | 2013-06-13 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体デバイスの製造方法 |
CN102664221A (zh) * | 2012-05-18 | 2012-09-12 | 杭州士兰明芯科技有限公司 | Led衬底的剥离方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023063176A1 (ja) * | 2021-10-12 | 2023-04-20 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
WO2024058180A1 (ja) * | 2022-09-12 | 2024-03-21 | 公立大学法人大阪 | 半導体装置形成用基板、半導体積層構造体、半導体装置、半導体装置形成用基板の製造方法、半導体積層構造体の製造方法及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
GB201608216D0 (en) | 2016-06-22 |
GB2539780B (en) | 2017-06-07 |
KR102020432B1 (ko) | 2019-09-11 |
US20180151404A1 (en) | 2018-05-31 |
DE112016002170T5 (de) | 2018-02-15 |
GB201509766D0 (en) | 2015-07-22 |
US10043700B2 (en) | 2018-08-07 |
CN107636800B (zh) | 2020-11-20 |
JP6425835B2 (ja) | 2018-11-21 |
WO2016180849A1 (en) | 2016-11-17 |
GB2539780A (en) | 2016-12-28 |
CN107636800A (zh) | 2018-01-26 |
KR20170137180A (ko) | 2017-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6425835B2 (ja) | ダイヤモンド−半導体複合基板を製造する方法 | |
CN107170668B (zh) | 一种自支撑氮化镓制备方法 | |
JP5165526B2 (ja) | 窒化物単結晶基板の製造方法 | |
US10023974B2 (en) | Substrates for semiconductor devices | |
JP5520836B2 (ja) | 半導体構造の製造方法 | |
CN111095480B (zh) | 具有iii族氮化物和金刚石层的晶片 | |
KR102047864B1 (ko) | 단결정 재료 사용의 개선된 효율을 갖는 유사 기판 | |
CN108699687B (zh) | 化合物半导体基板、表膜、和化合物半导体基板的制造方法 | |
JP6450086B2 (ja) | 化合物半導体基板の製造方法 | |
TWI721107B (zh) | 化合物半導體基板、膠片膜及化合物半導體基板之製造方法 | |
US20140159055A1 (en) | Substrates for semiconductor devices | |
JP2017139266A (ja) | 複合基板、半導体装置、およびこれらの製造方法 | |
TWI509828B (zh) | 製造氮化物半導體裝置的方法 | |
JP2010040737A (ja) | 半導体基板及びその製造方法 | |
US20180019169A1 (en) | Backing substrate stabilizing donor substrate for implant or reclamation | |
JP7186872B2 (ja) | 半導体基板の製造方法および半導体装置の製造方法 | |
US8841207B2 (en) | Reusable substrates for electronic device fabrication and methods thereof | |
JP2010037139A (ja) | 半導体基板の製造方法 | |
WO2023119916A1 (ja) | 窒化物半導体基板および窒化物半導体基板の製造方法 | |
KR101207412B1 (ko) | 질화갈륨 기판 및 그 제조방법 | |
KR100969159B1 (ko) | 질화물 반도체 기판의 제조 방법 | |
JP2021082773A (ja) | 半導体装置、半導体装置の製造方法、及び、電界効果型トランジスタ | |
KR20050083237A (ko) | 질화갈륨 기판의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180110 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180910 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180925 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181023 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6425835 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |