CN107636800A - 制造钻石半导体复合基板的方法 - Google Patents

制造钻石半导体复合基板的方法 Download PDF

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CN107636800A
CN107636800A CN201680027914.4A CN201680027914A CN107636800A CN 107636800 A CN107636800 A CN 107636800A CN 201680027914 A CN201680027914 A CN 201680027914A CN 107636800 A CN107636800 A CN 107636800A
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substrate
carboround
laser
compound semiconductor
diamond
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CN107636800B (zh
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丹尼尔·法兰西斯
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RFHIC Corp Korea
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Abstract

一种制造钻石半导体复合基板的方法，方法包括以下步骤：(i)从原生半导体晶圆开始，包括化合物半导体设置在其上的原生碳化硅生长基板；(ii)将碳化硅载体基板贴合至化合物半导体；(iii)移除原生碳化硅生长基板；(iv)形成化合物半导体上的成核层；(v)在成核层上生长多晶化学气相沉积(CVD)钻石以形成复合钻石‑化合物半导体‑碳化硅晶圆；以及(vi)通过激光剥离移除碳化硅载体基板以实现层状结构，包括经由成核层贴合至多晶化学气相沉积钻石的化合物半导体。其中在步骤(ii)中，碳化硅载体基板是经由激光吸收材料贴合至化合物半导体，激光吸收材料吸收在相干长度短于碳化硅载体基板的厚度的激光。

Description

制造钻石半导体复合基板的方法
技术领域
本发明涉及一种制造钻石-半导体复合基板的方法。特别是实施例涉及一种从碳化硅(SiC)基板上的氮化镓(GaN)开始，制造钻石基板上的氮化镓(GaN)的方法。
背景技术
下一世代半导体装置和特别是那些基于如氮化镓的化合物半导体，已提出用于高功率和/或高频装置，如高电子迁移率电晶体(high electron mobility transistors,HEMTs)。使得如氮化镓的化合物半导体的所有好处得以实现的一个限制是热管理。为此，提出整合的钻石散热基板，其具有非常高的热传导性，紧邻于半导体装置结构，例如氮化镓系半导体装置结构，以实现更高功率密度的使用、更高装置封装密度和/或增加这些装置的寿命。
近年来，已经开发了在单晶硅基板上制造高品质单晶氮化镓的方法，这些方法基本上涉及在单晶氮化镓外延(epitaxially)生长的硅基板上直接地提供压力管理层以减轻压力，由此产生在单晶硅基板与单晶氮化镓之间的晶格失配(lattice mismatch)。因此，现在市面上以可取得在单晶硅基板上的高品质单晶氮化镓。然而，这样的基板的一个问题是硅材料的热传导性是相对的低，因此，上覆的氮化镓无法被驱动到完全发挥潜力而不产生热管理的问题。
除上述之外，在单晶体碳化硅基板上制造高品质单晶氮化镓的方法也已经开发出来。碳化硅具有比硅高的热传导性。再一次，此方法基本上涉及在单晶氮化镓外延生长的碳化硅基板上直接地提供压力管理层以减轻压力，由此产生在单晶碳化硅基板与单晶氮化镓之间的晶格失配。因此，现在市面上以可取得在单晶碳化硅基板上的高品质单晶氮化镓，并且对于某些应用，在碳化硅基的基板提升热的表现之外，由于氮化镓的某些特性，例如低缺陷密度，使得这样的基板晶圆是优选的。这些碳化硅基的基板的一个缺陷是比硅基的替代更为昂贵。另外，虽然碳化硅的热传导性高于硅，上覆的氮化镓仍然无法被驱动到完全发挥潜力而不产生热管理的问题。
目前可取得的一种可能替代硅和碳化硅的方法，是发展一种在合成钻石基板上制造高品质单晶半导体层，如氮化镓的方法，合成钻石基板相对于其他热管理材料具有更高的热传导性。在这点上，在钻石基板上生长如氮化镓的半导体是可能的，通常具有薄的单晶硅或碳化硅层设置在钻石基板上，其具有氮化镓外延生长在薄的硅或碳化硅层上。然而，当相较于氮化镓生长在硅或氮化硅基板上，由于压力管理问题，至今仍不可能达成相同品质的单晶氮化镓材料在这样的基板上。另外，提供高品质、低缺陷的薄层单晶硅或碳化硅在钻石基板上是困难的，钻石基板提供对于半导体生长好的外延基板，并且也非常薄，例如小于50纳米的厚度，以减轻在上覆的半导体和底下的钻石散热材料之间热阻隔的阻抗问题。
鉴于上述情况，提出一种替代的方法，将氮化镓生长在硅或碳化硅基板上，并接者将氮化镓转移到合成钻石基板。由于单晶半导体通常具有外延层状的结构，所谓”外延层(epilayer)”结构，在暴露的上表面制造对于半导体装置是最佳的，接着在大多数的情况下，希望以合成钻石基板取代底下的硅或碳化硅基板，而不仅是提供钻石层在氮化镓外延层结构暴露的上表面上。也就是说，转移的过程涉及移除原生生长基板和提供合成钻石基板在其位置。在这样的过程当中，有两个因素是重要的：(i)转移的过程部会过度损坏氮化镓外延层结构；和(ii)合成钻石基板是以有源的氮化镓外延层结构与合成钻石材料之间低的热阻隔阻抗的整合，而与氮化镓外延层结构紧密的热接触。
美国专利US 7,595,507揭露从原生硅基板转移氮化镓外延层至合成钻石基的机板的制造过程。其方法包括(i)提供如氮化镓的化合物半导体设置在其上的原生生长基板，例如硅；(ii)贴合载体基板至化合物半导体层；(iii)移除原生生长基板；(iv)形成化合物半导体上的成核层；(v)在成核层上生长多晶化学气相沉积(CVD)钻石，并接着(vi)移除载体基板以实现层状结构，包括经由成核层贴合至多晶化学气相沉积钻石的化合物半导体。
在上述的制造过程当中，通常选择用于中间载体基板的材料会相同于原生生长基板的材料，以避免产生不同压力管理问题。如果以硅作为原生基板和中间载体基板，则这些基板原则上可以例如常规的机械研磨技术及/或研磨与蚀刻的组合来移除。然而，在这点上，因为晶圆在制造过程这个阶段是平坦的，当常规的机械研磨作业用于生长基板，中间载体基板的移除在钻石生长后是更有问题的。原因是中间载体基板在钻石生长后被弯曲而不容易通过常规的研磨方式移除。
美国专利US 7,595,507指出用在生长宽能隙半导体的典型基板为蓝宝石、碳化硅和硅，并且如果基板为蓝宝石或碳化硅，其移除是困难的，基板可通过化学剥离或激光剥离来移除。然而，在钻石生长后尝试移除碳化硅的中间载体基板已证实是有问题的。碳化硅并不能简单地被蚀刻，不论是湿式或干式的化学程序。此外，通过研磨也不容易将其移除，因为碳化硅-半导体-钻石复合晶圆的弯曲在钻石生长后已超过其厚度。更进一步，当这样的技术被运用时，尝试用激光剥离技术移除碳化硅载体基板造成钻石半导体晶圆粉碎。
有鉴于上述情况，本发明的实施例目的在于解决上述的问题，和提供可行的制造过程来制造由碳化硅半导体原生晶圆开始的钻石半导体复合基板。
发明内容
本发明提供制造钻石半导体复合基板的方法，所述方法包括以下步骤：
(i)从原生半导体晶圆开始，原生半导体晶圆包括化合物半导体设置在其上的原生碳化硅生长基板；
(ii)将碳化硅载体基板贴合至化合物半导体；
(iii)移除原生碳化硅生长基板；
(iv)形成化合物半导体上的成核层；
(v)在成核层上生长多晶化学气相沉积(CVD)钻石以形成复合钻石-化合物半导体-碳化硅晶圆；以及
(vi)移除碳化硅载体基板以实现层状结构，包括经由成核层贴合至多晶化学气相沉积钻石的化合物半导体；
其中在步骤(ii)中，碳化硅载体基板是经由激光吸收材料贴合至化合物半导体，激光吸收材料吸收在相干长度短于碳化硅载体基板的厚度的激光，
其中在步骤(vi)中，从化合物半导体移除碳化硅载体基板是通过以下步骤:
加热复合钻石-化合物半导体-碳化硅晶圆到至少100℃的温度；
将具有相干长度短于碳化硅载体基板的激光导向通过碳化硅载体基板，激光被激光吸收材料吸收；以及
在暴露于激光造成碳化硅载体基板从化合物半导体分离之后，冷却复合钻石-化合物半导体-碳化硅晶圆。
附图说明
为了更好的理解本发明和示出如何实施本发明，现在将通过参考附图的方式来描述本发明的实施例，其中：
图1(i)到图1(vi)示出了从碳化硅半导体晶圆开始，用于制造钻石半导体晶圆的制造过程。
具体实施方式
本发明的实施例提供一种可行的方法来制造由碳化硅半导体原生晶圆开始的钻石半导体复合基板。制造方法的起始点如图1(i)所示是原生半导体晶圆，包括如氮化镓的化合物半导体12设置在其上的原生碳化硅生长基板10。如现有技术部分所述，这样的晶圆可在市面上取得，并且已经发展使得单晶化合物半导体是高品质且具低缺陷密度。
如图1(ii)所示，碳化硅载体基板16通过激光吸收材料14贴合至化合物半导体12，激光吸收材料14吸收波长长于碳化硅载体基板16的激光。激光吸收材料14在之后激光剥离步骤的制造过程中用来松开碳化硅载体基板16。这些材料被选择用来吸收穿过碳化硅载体基板的激光，且可为陶瓷材料，例如多晶硅或非晶硅，或者其他能在贴合过程中生存并强力地吸收碳化硅载体基板传送的光的材料。激光吸收材料在将碳化硅载体基板贴合至化合物半导体之前可涂布在碳化硅载体基板上。举例来说，碳化硅不吸收1微米波长的光而多晶硅吸收。因此，将1微米波长的光导向通过碳化硅载体基板是可能的，并且通过多晶硅吸收光创造了将在以下描述的碳化硅载体基板的分离。
碳化硅载体基板可具有范围为100至2000微米的厚度。碳化硅载体基板的厚度必须大于之后在制造方法当中剥离步骤所使用的激光的相干长度。已经发现的是，如果激光的相干长度长于碳化硅载体基板的厚度，则无法达成顺畅和完整的剥离碳化硅载体基板。需注意的是，如本文中所描述的制造方法能顺畅和完整的剥离大直径的碳化硅载体基板。举例来说，碳化硅载体基板可具有至少为50毫米、80毫米、100毫米、120毫米、140毫米或150毫米的直径。
如图1步骤(iii)所示，原生碳化硅生长基板10被移除。根据一种可能性，移除原生碳化硅生长基板10使用两步骤的过程，包括机器研磨或抛光原生碳化硅生长基板10的主要部分；和干蚀刻碳化硅生长基板的剩余部分。由于复合晶圆在制程中这个阶段仍是平坦的配置，弯曲并不是显著的问题，因此原生碳化硅基板可在这样的方式下使用现有制程步骤来移除。只是之后在化学气相沉积钻石生长之后，复合基板显著的弯曲使得移除碳化硅载体基板特别有问题。
在移除原生碳化硅生长基板10后，化合物半导体外延层结构的下表面露出。然而，薄的原生压力匹配层仍然在露出的表面上，而这些的移除也使有利地。由于这些层非常薄，在这个阶段必须小心处理以移除原生压力匹配层，和可选地在外延层结构中部份的原生缓冲层，不伤害到化合物半导体外延层结构的有源区域。
一旦达成化合物半导体12外延层结构干净、平坦、低粗糙度的外露下表面，如图1(iv)所示，提供成核层18于其上以适合钻石生长。成核层18可包括纳米晶体钻石、碳化硅、硅、氮化硅、二氧化硅、氮化铝、氧化镁、氮化硼或氧化铍当中的一或多个。成核层18也可在钻石生长前以钻石粉末种晶。成核层作为在钻石生长期间保护化合物半导体，并提供对于钻石生长的适合表面。然而，应该做的非常薄，例如小于50纳米的厚度，否则层所提供的热阻隔会降低在随后的制造步骤中整合钻石散热层于结构中的效益。
如图1步骤(v)所示，多晶化学气相沉积(chemical vapour deposited,CVD)钻石20生长在成核层18上，形成复合钻石-化合物半导体-碳化硅晶圆。相对厚、高热传导层的多晶化学气相沉积钻石可被提供以有效的散热。举例来说，多晶化学气相沉积钻石可生长到至少50微米、100微米、150微米、200微米或300微米的厚度。然而，由于在碳化硅与钻石材料之间热膨胀系数的不同，作为结果的钻石-化合物半导体-碳化硅晶圆明显的弯曲。这在要移除碳化硅载体基板时是有问题的，必须达成如以下所述的最终钻石半导体晶圆。
钻石生长后，碳化硅基板必须移除以使钻石化合物半导体作为自立晶片。然而，碳化硅难以移除，因为它不能轻易的被蚀刻，不论是湿式或干式的化学程序。此外，也不能轻易地通过研磨或抛光来移除，因为碳化硅晶圆的弯曲超过其厚度。提出使用激光剥离技术于碳化硅载体基板，通过发射激光通过碳化硅载体基板而被碳化硅与化合物半导体之间的中间层吸收。然而，已经发现是有问题的，因为在钻石-碳化硅系统中，由热膨胀系数(CTE)在温度上的差异引起的内置应力导致晶圆在激光剥离制程期间爆炸。
本发明的发明人发现激光剥离程序特别的实施方式，防止晶圆在激光剥离程序期间裂开及损坏。在此方法当中，如图1(vi)所示，碳化硅载体基板16被移除以实现层状结构，包括经由成核层18贴合至多晶化学气相沉积钻石20的化合物半导体12。移除的步骤包括：
加热复合钻石-化合物半导体-碳化硅晶圆到至少100℃的温度，例如到至少150℃、200℃、300℃、400℃或450℃。
将具有相干长度短于碳化硅载体基板的激光导向通过碳化硅载体基板16，激光被激光吸收材料14吸收；以及
在暴露于激光造成碳化硅载体基板16从化合物半导体12分离之后，冷却复合钻石-化合物半导体-碳化硅晶圆。
已发现的是，通过加热晶圆到适度的水平，并使用短相干长度的激光，达到干净和完整分离大面积的碳化硅载体基板而不损坏钻石半导体晶圆是可能达成的。因此，需要选择激光具有相干长度短于碳化硅载体基板的厚度，并加热基板至大于150℃、200℃、300℃、400℃或450℃的温度。
如果用用较常相干长度的激光，则晶圆会发展出分离和未分离的区域。这样的制程结果是复合晶圆在分离制程期间裂开。此外，已发现如果分离制程是在室温下执行，分离涉及到释放显著数量的内置能量。这些能量的释放折断晶圆并造成半导体材料的区域仍然贴合至碳化硅载体而不是钻石基板。为了使钻石/半导体从碳化硅慢慢释放，钻石和碳化硅两者在激光剥离制程期间都被加热到例如超过200℃的温度，然后在整个晶圆暴露在激光之后，整个晶圆被冷却以制造平顺和均匀的分离。
在激光剥离步骤期间，复合钻石-化合物半导体-碳化硅晶圆可被加热到至少100℃、150℃、200℃、300℃、400℃或450℃的温度，和/或不多于650℃、600℃或550℃，和/或在这些上限值和下限值的任意组合所定义的范围内。事实上这可以在这样的低温完成是令人惊讶的，因为对于在钻石晶圆上碳化硅弯曲的测量指出，在通过加热取得碳化硅上钻石的弯曲降到200微米以下需要加热超过650℃。在这点上，200微米是个相对的数字，因为弯曲需要取得如同在硅晶圆上标准钻石的相同的应力水平。因此，令人惊讶的是移除步骤可以在仅使用100℃到650℃的适度加热来进行。
激光的相干长度范围可在10微米至400微米。另外，激光可具有的波长范围为400纳米至1200纳米和/或脉冲宽度范围为1至1000纳秒。在这点上，可注意的是激光源的相干长度Lc是通过以下的关系式给出：
Lc＝λ2/Δλ
其中，λ是激光的波长而Δλ是光谱的带宽。对于几乎转换有限的脉冲，相干长度和脉冲宽度是通过直接相关。举例来说，100飞秒(fs)的激光脉冲具有相干长度大约30微米(μm)。
令人惊讶的是对于本申请需要短相干长度的激光，因为对于大多数应用来说，较长相干长度的激光通常被认为是较好的激光。在这方面，较低品质的激光对本申请较佳。这样的激光可在冷却以影响分离前扫描碳化硅载体基板上，直到整层的激光吸收材料暴露于激光。
本方法可被应用在不同种类的碳化硅半导体晶圆以替换碳化硅基板为钻石基板。举例来说，化合物半导体可包括氮化镓、氮化铝、氮化铝镓和氮化铝镓铟当中的一或多个。
虽然已经参考实施例具体示出和描述了本发明，但是本领域技术人员将理解，在不脱离由所附权利要求所限定之本发明之范围的情况下，可以对形式和细节进行各种改变。

Claims (15)

1.一种制造钻石半导体复合基板的方法，其特征在于，所述方法包括以下步骤：
(i)从原生半导体晶圆开始，所述原生半导体晶圆包括化合物半导体设置在其上的原生碳化硅生长基板；
(ii)将碳化硅载体基板贴合至所述化合物半导体；
(iii)移除所述原生碳化硅生长基板；
(iv)形成所述化合物半导体上的成核层；
(v)在所述成核层上生长多晶化学气相沉积钻石以形成复合钻石-化合物半导体-碳化硅晶圆；以及
(vi)移除所述碳化硅载体基板以实现层状结构，包括经由所述成核层贴合至所述多晶化学气相沉积钻石的所述化合物半导体；
其中在步骤(ii)中，所述碳化硅载体基板是经由激光吸收材料贴合至所述化合物半导体，所述激光吸收材料吸收在相干长度短于所述碳化硅载体基板的厚度的激光，
其中在步骤(vi)中，从所述化合物半导体移除所述碳化硅载体基板是通过以下步骤:
加热所述复合钻石-化合物半导体-碳化硅晶圆到至少100℃的温度；
将具有相干长度短于所述碳化硅载体基板的激光导向通过所述碳化硅载体基板，所述激光被所述激光吸收材料吸收；以及
在暴露于所述激光造成所述碳化硅载体基板从所述化合物半导体分离之后，冷却所述复合钻石-化合物半导体-碳化硅晶圆。
2.根据权利要求1所述的方法，其特征在于，提供在所述碳化硅载体基板和所述化合物半导体之间的所述激光吸收材料是陶瓷材料。
3.根据权利要求2所述的方法，其特征在于，提供在所述碳化硅载体基板和所述化合物半导体之间的所述激光吸收材料是多晶或非晶硅。
4.根据前述权利要求1-3中任一项所述的方法，其特征在于，在所述碳化硅载体基板贴合至所述化合物半导体前，将所述激光吸收材料涂布在所述碳化硅载体基板上。
5.根据前述权利要求1-4中任一项所述的方法，其特征在于，所述碳化硅载体基板具有范围为100微米至2000微米的厚度。
6.根据前述权利要求1-5中任一项所述的方法，其特征在于，所述碳化硅载体基板具有至少为50毫米、80毫米、100毫米、120毫米、140毫米或150毫米的直径。
7.根据前述权利要求1-6中任一项所述的方法，其特征在于，移除所述原生碳化硅生长基板是使用两步骤的过程，包括：
机器研磨或抛光所述碳化硅生长基板的主要部分；
干蚀刻所述碳化硅生长基板的剩余部分。
8.根据前述权利要求1-7中任一项所述的方法，其特征在于，所述成核层包括纳米晶体钻石、碳化硅、硅、氮化硅、二氧化硅、氮化铝、氧化镁、氮化硼或氧化铍当中的一或多个。
9.根据前述权利要求1-8中任一项所述的方法，其特征在于，所述多晶化学气相沉积钻石是生长到至少50微米、100微米、150微米、200微米或300微米的厚度。
10.根据前述权利要求1-9中任一项所述的方法，其特征在于，在步骤(vi)中，所述复合钻石-化合物半导体-碳化硅晶圆加热的温度范围为100至550℃。
11.根据前述权利要求1-10中任一项所述的方法，其特征在于，所述激光的所述相干长度范围为10微米至400微米。
12.根据前述权利要求1-11中任一项所述的方法，其特征在于，所述激光具有波长范围为400纳米至1200纳米。
13.根据前述权利要求1-12中任一项所述的方法，其特征在于，所述激光具有脉冲宽度范围为1至1000纳秒。
14.根据前述权利要求1-13中任一项所述的方法，其特征在于，将激光导向通过所述碳化硅载体基板，被所述激光吸收材料吸收的所述步骤包括在冷却前移动所述激光束到所述碳化硅载体基板上，直到所述激光吸收材料整层暴露于激光。
15.根据前述权利要求1-14中任一项所述的方法，其特征在于，所述化合物半导体包括当中氮化镓、氮化铝、氮化铝镓和氮化铝镓铟当中的一或多个。
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