JP6638823B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6638823B2
JP6638823B2 JP2018546940A JP2018546940A JP6638823B2 JP 6638823 B2 JP6638823 B2 JP 6638823B2 JP 2018546940 A JP2018546940 A JP 2018546940A JP 2018546940 A JP2018546940 A JP 2018546940A JP 6638823 B2 JP6638823 B2 JP 6638823B2
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Japan
Prior art keywords
substrate
semiconductor device
heat generating
cap
hollow portion
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JP2018546940A
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JPWO2018078680A1 (ja
Inventor
弘一郎 西澤
弘一郎 西澤
山本　佳嗣
佳嗣 山本
勝巳 宮脇
勝巳 宮脇
伸介 渡辺
伸介 渡辺
俊彦 志賀
俊彦 志賀
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Description

この発明は中空部を有する半導体装置に関する。
半導体チップを内蔵するパッケージとして、モールド樹脂で封止するプラスチックパッケージが利用されている。プラスチックパッケージは、セラミックを用いて封止するセラミックパッケージに比べて廉価であるという利点がある。しかし、モールド樹脂はセラミックに比べて耐熱温度が低いため、半導体チップ内の発熱部からの発熱により、半導体チップと接するモールド樹脂の温度が耐熱温度付近以上に上がることがある。その結果、モールド樹脂が炭化して、半導体チップとの界面から剥離するなどの問題があった。
モールド樹脂の温度上昇を抑えるために、特許文献１〜３に例示された中空部を有した封止構造を用いることは有効である。中空部が半導体チップの発熱部分とモールド樹脂との間を断熱するからである。
実開平１−１４５１３３号公報 特開２００６−２３７４０５号公報 特開２０１１−１８６７１号公報
しかし、半導体チップからの発熱量が多い場合には、中空部を有した封止構造を用いたとしても、発熱部から放射される赤外線が中空部を介してモールド樹脂に吸収され、モールド樹脂の温度が高くなるという問題がある。このため、発熱量が多い高出力半導体デバイスなどではモールド樹脂を用いたプラスチックパッケージが使えず、中空部を有したセラミックパッケージを使わなければならない場合があり、パッケージ価格がプラスチックパッケージに比べて高くなってしまう。
この発明は上述した問題を解決するためになされたもので、モールド樹脂の温度上昇を抑えた半導体装置を提供することを目的とする。
この発明の半導体装置は、基板と、基板上に形成された発熱部と、基板の上方に、基板との間に中空部を持つように形成されたキャップ基板と、発熱部の上方に、赤外線を反射する反射膜と、少なくとも前記キャップ基板を覆うモールド樹脂と、を備える。
この発明によれば、中空部を有する半導体装置において、モールド樹脂の温度上昇を抑えることができる。
実施の形態１の半導体装置を示す断面図である。 実施の形態１の半導体装置を示す断面図である。 実施の形態１の半導体装置を示す上面図である。 実施の形態１の半導体装置の変形例を示す断面図である。 実施の形態１の半導体装置をパッケージ化した状態を示す断面図である。 実施の形態１の半導体装置に使用する基板を加工する工程を示す断面図である。 実施の形態１の半導体装置に使用するキャップ基板を加工する工程を示す断面図である。 実施の形態１の半導体装置をパッケージ化する工程を示す断面図である。 シミュレーションに用いた中空部を有しない構造を示す斜視図である。 シミュレーションに用いた中空部を有しない構造を示す断面図である。 シミュレーションに用いた中空部を有する構造を示す断面図である。 中空部を有する構造の発熱部の温度分布を示すグラフである。 実施の形態２の半導体装置を示す断面図である。 実施の形態３の半導体装置を示す断面図である。
実施の形態１．
［構成］
実施の形態１の半導体装置１の構成について説明する。図１および図２は半導体装置１の断面図であり、それぞれ図３におけるＡＡ断面およびＢＢ断面である。図３は半導体装置１の上面図である。ただし図３ではキャップ基板３や反射膜９等の図示を省略している。
図１および図２に示すように、基板２の上に発熱部４が形成されている。基板２は材料がＳｉＣであり、厚さが１００μｍ程度である。図示していないが、鏡面にした基板２の上面にエピタキシャル成長させたＧａＮ層やＡｌＧａＮ層を用いて能動素子であるＨＥＭＴ（High Electron Mobility Transistor）が形成されており、ＧａＮ層とＡｌＧａＮ層の界面にはチャネルが形成されている。ここでは発熱部４はこのチャネルである。ＨＥＭＴには、ゲート電極５、ソース電極６、ドレイン電極７が形成されており、それぞれ電極パッド１３〜１５に電気的に接続されている。これらの電極の長さは５０〜１００μｍ程度であり、幅はゲート電極５が１本当たり１〜５μｍ程度、ソース電極６とドレイン電極７がどちらも１０〜５０μｍ程度である。
なお、ここでは半導体装置にはＨＥＭＴが１つのみ含まれる場合を示したが、ＨＥＭＴが２つ以上含まれてもよい。また、基板２はＳｉＣ基板である必要はなく、ＧａＡｓやＳｉ、ＳｉＧｅ、ＧａＮ、ＩｎＰなどの基板でもよい。また能動素子はＭＯＳＦＥＴ（Metal Oxide Semiconductor Field Effect Transistor）やＨＦＥＴ（Heterostructure Field Effect Transistor）、バイポーラトランジスタなどであってもよい。また、抵抗やキャパシタ、インダクタなどの受動素子を含み、それらと能動素子が電気回路を構成してもよい。
基板２にはビア２２が形成されている。ビア２２はソース電極パッド１４および裏面電極２１と電気的に接続されている。基板２の上には接合パッド１１が発熱部４を囲むように設けられ、接合パッド１１の上に封止枠１８が設けられている。さらに、ゲート電極パッド１３、ドレイン電極パッド１５の上にはバンプ１９が設けられている。
基板２の上には発熱部４を覆うように絶縁膜８が形成されている。ここでは絶縁膜８はバンプ１９、封止枠１８を除いた全領域に形成されている。
絶縁膜８の上には反射膜９が設けられている。平面視で、反射膜９は絶縁膜８よりも狭い領域に形成されている。反射膜８は赤外線を反射する性質を持ち、平面視で、発熱部４とほぼ重なるように配置されている。
封止枠１８、バンプ１９に支えられるようにしてキャップ基板３が設けられている。キャップ基板３は材料がＳｉであり、厚さが１００μｍ程度である。キャップ基板３にはビア２３が形成されている。ゲート電極５およびドレイン電極７はバンプ１９、電極パッド１６を介して、キャップ基板３の上面に設けられた電極２４に取り出されている。基板２とキャップ基板３の間には中空部１０があり、その高さは１０μｍ程度である。中空部１０は絶縁膜８、封止枠１８、キャップ基板３によって囲まれており、気密性が保たれている。
なお、実施の形態１の半導体装置１ではキャップ基板３の下面は全面が平面になっているが、封止枠１８の高さが十分に取れない場合には、図４に示すようにキャップ基板３を凹形状にすることで中空部１０を確保する構造でもよい。ここではキャップ基板３は基板２の上に設けた封止材２５上に載っており、封止材２５は樹脂で出来ている。
また、実施の形態１の半導体装置１ではキャップ基板３は基板２の表面を全て覆うように形成されているが、必ずしも全面を覆っている必要はなく、発熱部４の上方に密閉された中空部１０を持つ構造であればよい。
また、キャップ基板３に配線以外のエレメントを形成してもよく、例えば基板２の上に形成したＨＥＭＴを含む電気回路用の整合回路を形成してもよい。さらに、キャップ基板３の材料としてエピタキシャル成長面のある半導体基板を用いてもよく、キャップ基板３にトランジスタ等の能動素子やエピタキシャル抵抗を形成し、これらを用いて電気回路を構成してもよい。
次に、半導体装置１をパッケージ化した構成について説明する。図５は半導体装置１がパッケージ化された状態を示す断面図である。裏面電極２１の下にＡｕＳｎはんだ等によるダイボンド材３０を介してベース２６が接合されている。ベース２６はソース電極６を電気的に外部に接続するために用いられる。ベース２６には放熱材としての役目もあるため、放熱特性のよい部材が適しており、材料として例えばＣｕＷを用いる。また、ドレイン電極７、ソース電極６を電気的に外部に接続するために、リード２７がワイヤ２８を介して、キャップ基板３の上面に形成された電極２４と電気的に接続されている。
半導体装置１の周囲には、半導体装置１を封止したモールド樹脂２９が形成されている。モールド樹脂２９によって封止されることで、半導体装置１が外部から保護される。
ここで、１００Ｗ程度の発熱が想定される半導体装置の場合について述べる。図３ではゲート電極５が２本の場合を示しているが、１００Ｗ程度の発熱が想定される半導体装置の場合は、ゲート電極の長さが５００μｍ程度、ゲート電極の本数が５０〜１００本程度となる。そうするとＨＥＭＴの幅は２〜４ｍｍとなる。
上記のように１００Ｗ程度の発熱がある場合、発熱部の温度は１００〜３００℃程度となる場合がある。ウィーンの変位則によると、黒体放射のピーク波長λ（μｍ）はＴを温度（℃）として次式で与えられる。
λ＝２８９６／（Ｔ＋２７３）
発熱部４からの放射のピーク波長も近似的にこの式に従うとすると、温度が１００〜３００℃の場合にはピーク波長は５．１〜７．８μｍである。この範囲の波長は中波長赤外線（３〜８μｍ）に分類される。
［製造方法］
実施の形態１の半導体装置１の製造方法、および、半導体装置１をモールド樹脂で封止する方法について説明する。
基板２対する加工を図６に沿って説明する。図６は図３におけるＢＢ断面である。基板２の上には、図示していないが、すでにＧａＮ層やＡｌＧａＮ層が積層されているものとする。まず、図６（ａ）のように基板２上面に、ゲート電極５、ソース電極６、ドレイン電極７、接合パッド１１、電極パッド１３〜１５を形成する。ただし、図２では断面に電極パッド１３および１５が現れないため、これらの電極パッドを図示していない。接合パッド１１、電極パッド１３〜１５は、封止枠１８やバンプ１９が、基板２に対して密着性が悪い場合や、基板２に拡散する材料である場合に、その対策のために形成するものである。例えば、封止枠１８やバンプ１９の材料がＡｕである場合には、それらとのコンタクト面をＡｕにしておくのがよいため、レジストパターニング後に、蒸着でＴｉ、Ａｕを順次形成したあと、リフトオフによりパターンを形成する。金属の構成は、例えばＴｉを５０ｎｍ形成したあとＡｕを５００ｎｍ形成したものとする。Ｔｉはキャップ基板３との密着性とバリア性の確保、Ａｕは封止枠１８やバンプ１９との密着性確保のために用いる。ここでは、ＡｕやＡｕＳｎを封止枠１８やバンプ１９の材料とした場合で説明を行うため、接合パッド１２、電極パッド１６の表面もＡｕとしているが、封止枠１８やバンプ１９の材料に他の金属を用いる場合には、それに合わせて接合パッド１１、電極パッド１３〜１５の最表面の金属材料を選択する必要がある。
次に、図６（ｂ）のように絶縁膜８と反射膜９を形成する。絶縁膜８の形成のために、まず感光性のポリイミド材をウェハ全面に塗布し、フォトマスクで露光、現像をして、封止枠１８およびバンプ１９の形成箇所に開口を作製する。その後、窒素雰囲気中、２００℃〜３００℃で１時間程度ベークを行うとポリイミド材の溶媒が抜け、同時に架橋反応によりイミド化し、永久膜としての絶縁膜８が形成される。次に、反射膜９を発熱部４の上方、絶縁膜の上に形成する。反射膜９はＡｕを材料として蒸着リフトオフにより形成する。あるいは、メタルスパッタリング法により全面に形成したのち、レジストパターニングを行い、イオンミリング法などにより不要部分を除去する方法などで形成してもよい。
次に、図６（ｃ）のように基板２の裏面側を削って薄板化する。基板２を研削したのち、ダメージ層をポリッシュにより除去する。基板２の厚さは例えば１００μｍ程度にする。
次に、図６（ｄ）のようにビア２２と裏面電極２１の形成を行う。基板２の薄板化加工した面にレジストパターニングし、ウェットまたはドライエッチングによりビア２２の形成を行う。そして、基板２の下面に裏面電極２１を形成する。スパッタや蒸着ではビア２２の中に厚い金属膜を得ることが困難であるため、例えば、スパッタでＴｉ、Ａｕを連続成膜してから、さらにＡｕを電気めっきにより数μｍ程度めっきする。パターニングは、例えば、めっき後にレジストでパターニングし、ウェットエッチングやミリングにより、不要部分を取り除く。
次に、図６（ｅ）のようにＡｕを材料として封止枠１８およびバンプ１９を同時に形成する。ただし図６（ｅ）では、断面上にバンプ１９が存在しないため、バンプ１９は図示していない。レジストで封止枠１８の箇所とバンプ１９の箇所を除いてパターニングしてから、スパッタでシード層としてＡｕを３００ｎｍの厚さに形成して、さらにもう１層レジストで封止枠１８の箇所とバンプ１９の箇所を除いてパターニングし、封止枠１８とバンプ１９のシード層を露出する。露出部に対して電解Ａｕめっきを行い、同じ高さの封止枠１８およびバンプ１９を形成する。その後、レジスト除去、ミリング、レジスト除去を順次行うと、封止枠１８およびバンプ１９が完成する。なお、封止枠１８とバンプ１９は別々に形成してもよく、そうした場合、封止枠１８は導電性の金属である必然性はないため、ポリイミドなどの有機素材や、ガラスなどの無機素材で作製してもよい。また形成方法も、無電解めっきでもよいし、金属粒子等の材料を溶媒に混ぜたものを印刷法やインクジェット法によりパターニングしてもよい。
以上で基板２に対する加工が完了する。
キャップ基板３に対する加工を図７に沿って説明する。図７は図３におけるＡＡ断面である。まず、図７（ａ）のように接合パッド１２、電極パッド１６の形成を行う。形成方法として、レジストパターニング後、蒸着リフトオフにより形成する方法やメタルスパッタリング法により全面に形成したのち、レジストパターニングを行い、イオンミリング法などにより不要部分を除去する方法などがある。金属の構成は、例えばＴｉを５０ｎｍ形成したあとＡｕを５００ｎｍ形成したものとする。Ｔｉはキャップ基板３との密着性とバリア性の確保、Ａｕは封止枠１８やバンプ１９との密着性確保のために用いる。ここでは、ＡｕやＡｕＳｎを封止枠１８やバンプ１９の材料とした場合で説明を行うため、接合パッド１２、電極パッド１６の表面もＡｕとしているが、封止枠１８やバンプ１９の材料に他の金属を用いる場合には、それに合わせて接合パッド１２、電極パッド１６の最表面の金属材料を選択する必要がある。
次に、図７（ｂ）のようにキャップ基板３の上面側を削って薄板化する。キャップ基板３を研削したのち、ダメージ層をポリッシュにより除去する。キャップ基板３の厚さは例えば１００μｍ程度にする。
次に、図７（ｃ）のようにビア２３と電極２４の形成を行う。キャップ基板３の薄板化加工した面にレジストパターニングし、ウェットまたはドライエッチングによりビア２３の形成を行う。キャップ基板３の材質によってはレジストとの加工選択比がないため、Ｎｉ等の金属材料をレジストの代わりにパターニングする場合もある。そして、キャップ基板３の上面にスパッタでＴｉ、Ａｕを連続成膜してから、Ａｕを電気めっきによりさらに数μｍ程度めっきすることで電極２４を形成する。
以上でキャップ基板３に対する加工が完了する。
加工が完了した基板２とキャップ基板３をアライメントしてから、昇温、加圧して接合する。ここで示したようにどちらもＡｕを材料とする封止枠１８、バンプ１９を、接合パッド１２、電極パッド１６と接合する場合、両方の接合面にＡｒプラズマを照射して表面を削り、活性化させた状態で接合すると、Ａｕ同士の界面が消滅して接合された状態となる。接合状態は、接合面の平坦性が高いほど、接合時の温度が高いほど、接合時の圧力が高いほど良好であり、例えば、平坦性はＲａ＝２〜３ｎｍ、温度は３００℃、圧力は１００ＭＰａなどとするとよい。
こうして接合された基板２とキャップ基板３をダイシングして中空部１０を有する半導体装置１が完成する。
さらに、半導体装置１をモールド樹脂２９で封止する方法を図８に沿って説明する。まず、図８（ａ）のように半導体装置１をＣｕＷなどで出来たベース２６上にダイボンドする。そして、電極２４とリード２７の間にワイヤ２８で配線をする。ダイボンド材３０としては、耐熱性、放熱性の良い材料を選択するとよく、ＡｕＳｎのはんだや、さらに放熱性の高い焼結Ａｇなどを用いるとよい。
次に、図８（ｂ）のようにダイボンドした半導体装置１を金型３１にセットして、金型３１の中にモールド樹脂２９をモールド樹脂注入口３２から流し込む。モールド樹脂２９は高圧で流し込むことで半導体装置１や金型３１との間に隙間なく注入できて、成形を安定化させることができる。
最後に図８（ｃ）のように金型３１を外して、モールド樹脂２９による封止が完了する。
［効果］
実施の形態１の半導体装置１に適用した発明による効果を説明する。中空部１０は、発熱部４と、キャップ基板３やモールド樹脂２９との間を断熱する。そのため中空部１０は、発熱部４からの熱がモールド樹脂２９に伝わるのを防ぐ役割を持ち、モールド樹脂２９の温度上昇を抑える。しかし上述したように、発熱部４からの発熱量が１００Ｗ程度の場合、発熱部４の温度は１００〜３００℃に達する。温度が１００〜３００℃に達した発熱部４から放射される赤外線がキャップ基板３やモールド樹脂２９に吸収され、モールド樹脂２９の温度上昇が起こる。
ここで、中空部１０を設けることによりモールド樹脂２９の温度上昇が抑えられることを確認したシミュレーションについて説明する。シミュレーションのモデルとして中空部を有しない構造と、中空部を有する構造を用いた。
シミュレーションに用いた中空部を有しない構造について説明する。図９は中空部を有しない構造の斜視図であり、図１０は中空部を有しない構造の断面図である。中空部を有しない構造では、８５℃に固定したアルミブロック３３の上に１ｍｍ厚のＣｕＷベース２６を配置している。そしてベース２６の上に１００μｍ厚のＳｉＣ基板２が１０μｍ厚のＡｕＳｎダイボンド材３０でダイボンドされている。基板２上にはＧａＮ ＨＥＭＴが形成されており、このＨＥＭＴのチャネルを発熱部４としている。なお、ＨＥＭＴが形成されている層の厚さは薄いとして、基板２の上に本来形成されるエピタキシャル層は省いており、発熱部４は基板２上面の一部に形成されているとしている。ＨＥＭＴはゲート幅が５０．４ｍｍ、ゲートフィンガー数が１２０とし、動作時の発熱量を９７Ｗとした。ベース２６および基板２の上部はモールド樹脂２９で覆われている。
シミュレーションに用いた中空部を有する構造について説明する。図１１は中空部を有する構造の断面図である。この構造では、基板２の上部に１０μｍ厚の中空部１０を挟んで１００μｍ厚のＳｉキャップ基板３が形成されている。中空部１０には窒素が充満されているとしている。その他の条件は中空部を有しない構造と同一である。
シミュレーションを実施した結果、モールド樹脂の最高温度は、中空部を有しない構造では１８７．９７℃、中空部を有する構造では１４３．００℃であり、中空部を有する構造のほうが大幅に低くなることが分かった。しかし、一般的なモールド樹脂の耐熱温度である１５０℃に対してマージンがない。ゆえに、モールド樹脂の温度上昇を抑えるためのさらなる対策が必要である。その対策である反射膜の導入による効果を以下に述べる。
実施の形態１の半導体装置１のように、反射膜９があれば、発熱部４から放射される赤外線が反射されるため、キャップ基板３やモールド樹脂２９で赤外線が吸収される割合が小さくなり、モールド樹脂２９の温度上昇がさらに抑えられる。
通常、発熱部４の温度はその中心付近が最も高く、周辺に行くに従って温度が低くなる。ステファン・ボルツマンの法則によると、黒体からの放射エネルギーは絶対温度（Ｋ）の４乗に比例する。発熱部４からの放射エネルギーも近似的に絶対温度の４乗に比例しているとすると、中心付近からの放射エネルギーが最も大きく、周辺に行くに従って放射エネルギーが小さくなることがわかる。したがって反射膜９は平面視で発熱部４の中心を覆うように配置されるのが望ましい。図１２は中空部を有する構造における発熱部４の温度分布をシミュレーションで計算した結果である。この図を見ると、発熱部４のうち温度が高い領域は、発熱部４の中心の８割程度の長さの領域であることが分かる。平面に換算すると温度が高い領域は８割×８割＝６．４割程度の面積の領域である。すなわち反射膜９は平面視で少なくとも発熱部４の中心部の６割程度の面積を覆うように配置されているのが望ましい。さらに、少なくとも発熱部４の全面を覆っているのが望ましい。
また、反射膜９が効率よく赤外線を反射するのが望ましいため、反射膜９の反射率は高いほうがよい。また、反射率と吸収率の関係は、透過がないとすると、
反射率＝１−吸収率
である。さらに、放射に関するキルヒホッフの法則から
吸収率＝放射率
である。つまり、
反射率＝１−放射率
である。発熱部４からの熱伝導により反射膜９の温度も高くなっているため、反射膜９に放射率の高い材料が使われた場合、反射膜９からの赤外線放射のエネルギーが高くなり、モールド樹脂２９の温度上昇が起こる。したがって、この温度上昇を抑えるためには反射膜９の放射率を小さくすればよい。すなわち、反射膜９の反射率を大きくすればよい。よって、中波長赤外線領域における反射率が０．９以上であるのが望ましい。そして、反射膜９の材料として適しているのは、中波長赤外線の反射率が高く、透過率および吸収率の低い金属などである。具体的には、Ａｌ、黄銅、Ｃｕ、Ａｕ、Ｎｉ、Ｐｔ、Ａｇ、Ｚｎ、Ｐｄなどである。また反射膜９として、反射率の高い物質層を含む多層膜を用いてもよい。
また、金属に赤外線が入射された場合、赤外線は金属の表面から深さ０．０３μｍ以上にはほとんど到達しないため、反射膜９の材料として金属を用いる場合に、その厚さを０．０３μｍ以上にするのがよい。
また反射膜９はその上面も下面（絶縁膜との接着面）も反射率が高いことが望ましいが、どちらかの面のみの反射率が高い場合でも効果を得ることができる。例えば下面のみ反射率が高い場合には、発熱部４から放射される赤外線が反射されるため、モールド樹脂２９の温度上昇を抑えることができる。また上面のみ反射率が高い場合には、反射膜９の上面の温度が高くなった場合でも、反射膜９の上面からの赤外線放射のエネルギーが抑えられるため、モールド樹脂２９の温度上昇を抑えることができる。反射膜の上面あるいは下面のどちらかの面のみ反射率が高い状況は、反射膜のどちらかの面のみが酸化して層が形成されているような場合に実現される。
なお、反射率は反射膜９の下面の表面状態にも依存し、この面が光沢面、鏡面、研磨面などと呼ばれる、表面粗さ（Ｒａ）が数ｎｍ〜数十ｎｍ以下の面であることが望ましい。逆に表面が粗くなるほど反射率は低下するため、表面が酸化するのを防止する目的で、中波長赤外線を透過しやすい絶縁膜（ＳｉＯなど）で反射膜９の下面をコーティングしてもよい。
また、中空部１０は、例えば窒素などの乾燥空気を充満させてもよいが、真空状態とするほうがさらによい。窒素の熱伝導率は０．０２４Ｗ／ｍ・Ｋ程度であり、半導体のＳｉの熱伝導率は１６８Ｗ／ｍ・Ｋ程度であるため、窒素の熱伝導率はＳｉに比べて４桁ほど低くなる。真空状態ではそれより熱伝導率が低くなり、発熱部４からモールド樹脂２９への熱伝導がさらに少なくなる。
基板２の材料は熱伝導率の高い物が望ましい。発熱部からの放熱経路は基板２の裏面からダイボンド材３０を経てベース２６へと至る経路であるため、基板２の熱伝導率が高いほど、放熱効率が高くなる。半導体基板の中でもＳｉＣ基板は熱伝導率が高く、材料として適している。
キャップ基板３の熱伝導率は基板２より低いことが望ましい。発熱部４で発生した熱の一部は熱伝導と放射によりキャップ基板３に到達するが、キャップ基板３の熱伝導率が基板２よりも低いことにより、発熱部４で発生した熱が基板２からベース２６へと選択的に多くの熱を逃がすことが可能になり、モールド樹脂２９の温度上昇が抑えられる。
実施の形態２．
実施の形態２の半導体装置について説明する。実施の形態２の半導体装置と実施の形態１の半導体装置の主な違いは、反射膜が形成された場所にある。ここでは主にその違いを説明する。
図１３は半導体装置１０１の断面図である。反射膜９はキャップ基板３の基板２に対向する面上に形成されている。このため、実施の形態１で説明したように反射膜９が、発熱部４から放射される赤外線がキャップ基板３やモールド樹脂２９に届くのを防ぐため、モールド樹脂２９の温度上昇が抑えられる。ここでは実施の形態１の絶縁膜８が省かれているが、絶縁膜があってもかまわない。
なお、反射膜９は反射率の高い物質層を含む２層以上の積層膜でもよく、基板２に最も近い層のみが反射の機能を持てばよい。例えば、キャップ基板３との密着性のよいＴｉをキャップ基板３と接着する層の材料とし、Ｔｉとの密着性がよく赤外線の反射率も高いＡｕを基板２に近い層の材料として用いた２層構造にしてもよい。
実施の形態３．
実施の形態３の半導体装置について説明する。実施の形態３の半導体装置と実施の形態１の半導体装置の主な違いは、反射膜が形成された場所にある。ここでは主にその違いを説明する。
図１４は半導体装置２０１の断面図である。反射膜９はキャップ基板３の基板２に対向する面の反対の面上に形成されている。このため、実施の形態１で説明したように反射膜９が、発熱部４から放射される赤外線がモールド樹脂２９に届くのを防ぐため、モールド樹脂２９の温度上昇が抑えられる。ここでは実施の形態１の絶縁膜８が省かれているが、絶縁膜があってもかまわない。
なお、キャップ基板３はＳｉで出来ているため、赤外線の吸収は少なく、発熱部４から放射される赤外線の多くを透過する。このため、発熱部４からの赤外線の多くが反射膜９に到達し、基板２側に向かって反射される。このようにキャップ基板３は赤外線の吸収率が低いことが望ましく、材料としてはＳｉのほか、ＳｉＣ、ＧａＡｓ、Ｓｉ、ＳｉＧｅ、ＧａＮ、ＩｎＰなどでもよい。
また、反射膜９は反射率の高い物質層を含む２層以上の積層膜でもよく、基板２から最も遠い層のみが反射の機能を持てばよい。例えば、キャップ基板３との密着性のよいＴｉをキャップ基板３と接着する層の材料とし、Ｔｉとの密着性がよく赤外線の反射率も高いＡｕを基板２から遠い層の材料として用いた２層構造にしてもよい。
［実施の形態１〜３について］
なお、実施の形態１〜３にそれぞれ適用した発明は、上記のようにそれぞれ単独で使用してもよいが、それらの発明を組み合わせて用いてもよい。
１，１０１，２０１ 半導体装置、２ 基板、３ キャップ基板、４ 発熱部、５ ゲート電極、６ ソース電極、７ ドレイン電極、８ 絶縁膜、９ 反射膜、１０ 中空部、１１，１２ 接合パッド、１３，１４，１５，１６ 電極パッド、１８ 封止枠、１９ バンプ、２１ 裏面電極、２２，２３ ビア、２４ 電極、２５ 封止材、２６ ベース、２７ リード、２８ ワイヤ、２９ モールド樹脂、３０ ダイボンド材、３１ 金型、３２ モールド樹脂注入口、３３ アルミブロック

Claims (13)

  1. 基板と、
    前記基板上に形成された発熱部と、
    前記基板の上方に、前基板との間に中空部を持つように形成されたキャップ基板と、
    前記発熱部の上方に中波長赤外線を反射する反射膜と、
    少なくとも前記キャップ基板を覆うモールド樹脂と、
    を備えた半導体装置。
  2. 前記基板上に、前記発熱部を覆うように形成された絶縁膜を備え、前記中空部が、前記絶縁膜と前記キャップ基板との間に形成され、前記反射膜が、前記絶縁膜上に形成されたことを特徴とする請求項１に記載の半導体装置。
  3. 基板と、
    前記基板上に形成された発熱部と、
    前記基板の上方に、前基板との間に中空部を持つように形成されたキャップ基板と、
    前記発熱部の上方に中波長赤外線を反射する反射膜と、
    を備え、
    前記反射膜が、前記キャップ基板の面のうち前記基板との対向面上に形成されたことを特徴とする半導体装置。
  4. 基板と、
    前記基板上に形成された発熱部と、
    前記基板の上方に、前基板との間に中空部を持つように形成されたキャップ基板と、
    前記発熱部の上方に中波長赤外線を反射する反射膜と、
    を備え、
    前記反射膜が、前記キャップ基板の面のうち前記基板との対向面の反対の面上に形成されたことを特徴とする半導体装置。
  5. 前記反射膜が、平面視で前記発熱部の中心の少なくとも６割の面積を覆うことを特徴とする請求項１〜４のいずれか１項に記載の半導体装置。
  6. 前記反射膜が、平面視で前記発熱部の少なくとも全面を覆うことを特徴とする請求項５に記載の半導体装置。
  7. 前記反射膜の中波長赤外線に対する反射率が０．９以上であることを特徴とする請求項１〜６のいずれか１項に記載の半導体装置。
  8. 前記反射膜の、波長範囲が５．１〜７．８μｍの赤外線に対する反射率が０．９以上であることを特徴とする請求項７に記載の半導体装置。
  9. 前記反射膜が金属で出来た層を含むことを特徴とする請求項１〜８のいずれか１項に記載の半導体装置。
  10. 前記反射膜が、Ａｌ、黄銅、Ｃｕ、Ａｕ、Ｎｉ、Ｐｔ、Ａｇ、Ｚｎ、Ｐｄのいずれかの金属で出来た層を含むことを特徴とする請求項９に記載の半導体装置。
  11. 前記中空部が真空であることを特徴とする請求項１〜１０のいずれか１項に記載の半導体装置。
  12. 前記キャップ基板の熱伝導率が前記基板より低いことを特徴とする請求項１〜１１のいずれか１項に記載の半導体装置。
  13. 前記基板がＳｉＣで出来ていることを特徴とする請求項１〜１２のいずれか１項に記載の半導体装置。
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JPWO2018078680A1 (ja) 2019-02-28
KR102221892B1 (ko) 2021-03-02
CN109863590A (zh) 2019-06-07
KR20190052098A (ko) 2019-05-15
TWI638435B (zh) 2018-10-11
US10854523B2 (en) 2020-12-01
US20200185285A1 (en) 2020-06-11
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