JP2024515033A - 担体の直接ボンディング及び剥離 - Google Patents

担体の直接ボンディング及び剥離 Download PDF

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JP2024515033A
JP2024515033A JP2023560699A JP2023560699A JP2024515033A JP 2024515033 A JP2024515033 A JP 2024515033A JP 2023560699 A JP2023560699 A JP 2023560699A JP 2023560699 A JP2023560699 A JP 2023560699A JP 2024515033 A JP2024515033 A JP 2024515033A
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layer
semiconductor element
carrier
bonding
photodecomposition
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Japanese (ja)
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JP2024515033A5 (https=
Inventor
ギリアン ガオ
ガイウス ギルマン ジュニア ファウンテン
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アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド
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Publication of JP2024515033A publication Critical patent/JP2024515033A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H10P72/745—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer the bond interface between the auxiliary support and the wafer comprises three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01904—Manufacture or treatment of bond pads using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/211—Direct bonding of chips, wafers or substrates using auxiliary members, e.g. aids for protecting the bonding area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
JP2023560699A 2021-03-31 2022-03-30 担体の直接ボンディング及び剥離 Pending JP2024515033A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163169029P 2021-03-31 2021-03-31
US63/169,029 2021-03-31
PCT/US2022/022673 WO2022212594A1 (en) 2021-03-31 2022-03-30 Direct bonding and debonding of carrier

Publications (2)

Publication Number Publication Date
JP2024515033A true JP2024515033A (ja) 2024-04-04
JP2024515033A5 JP2024515033A5 (https=) 2025-04-07

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JP2023560699A Pending JP2024515033A (ja) 2021-03-31 2022-03-30 担体の直接ボンディング及び剥離

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US (1) US12525572B2 (https=)
EP (1) EP4315398A4 (https=)
JP (1) JP2024515033A (https=)
KR (1) KR20230164153A (https=)
CN (1) CN117413344A (https=)
WO (1) WO2022212594A1 (https=)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US9953941B2 (en) 2015-08-25 2018-04-24 Invensas Bonding Technologies, Inc. Conductive barrier direct hybrid bonding
US10204893B2 (en) 2016-05-19 2019-02-12 Invensas Bonding Technologies, Inc. Stacked dies and methods for forming bonded structures
US10580735B2 (en) 2016-10-07 2020-03-03 Xcelsis Corporation Stacked IC structure with system level wiring on multiple sides of the IC die
US10607136B2 (en) 2017-08-03 2020-03-31 Xcelsis Corporation Time borrowing between layers of a three dimensional chip stack
US10672663B2 (en) 2016-10-07 2020-06-02 Xcelsis Corporation 3D chip sharing power circuit
TWI822659B (zh) 2016-10-27 2023-11-21 美商艾德亞半導體科技有限責任公司 用於低溫接合的結構和方法
US10002844B1 (en) 2016-12-21 2018-06-19 Invensas Bonding Technologies, Inc. Bonded structures
WO2018125673A2 (en) 2016-12-28 2018-07-05 Invensas Bonding Technologies, Inc Processing stacked substrates
US20180182665A1 (en) 2016-12-28 2018-06-28 Invensas Bonding Technologies, Inc. Processed Substrate
TWI837879B (zh) 2016-12-29 2024-04-01 美商艾德亞半導體接合科技有限公司 具有整合式被動構件的接合結構
US10629577B2 (en) 2017-03-16 2020-04-21 Invensas Corporation Direct-bonded LED arrays and applications
US10515913B2 (en) 2017-03-17 2019-12-24 Invensas Bonding Technologies, Inc. Multi-metal contact structure
US10508030B2 (en) 2017-03-21 2019-12-17 Invensas Bonding Technologies, Inc. Seal for microelectronic assembly
US10269756B2 (en) 2017-04-21 2019-04-23 Invensas Bonding Technologies, Inc. Die processing
US10879212B2 (en) 2017-05-11 2020-12-29 Invensas Bonding Technologies, Inc. Processed stacked dies
US10446441B2 (en) 2017-06-05 2019-10-15 Invensas Corporation Flat metal features for microelectronics applications
US10217720B2 (en) 2017-06-15 2019-02-26 Invensas Corporation Multi-chip modules formed using wafer-level processing of a reconstitute wafer
US10840205B2 (en) 2017-09-24 2020-11-17 Invensas Bonding Technologies, Inc. Chemical mechanical polishing for hybrid bonding
US11031285B2 (en) 2017-10-06 2021-06-08 Invensas Bonding Technologies, Inc. Diffusion barrier collar for interconnects
US11011503B2 (en) 2017-12-15 2021-05-18 Invensas Bonding Technologies, Inc. Direct-bonded optoelectronic interconnect for high-density integrated photonics
US11380597B2 (en) 2017-12-22 2022-07-05 Invensas Bonding Technologies, Inc. Bonded structures
US10727219B2 (en) 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
US11169326B2 (en) 2018-02-26 2021-11-09 Invensas Bonding Technologies, Inc. Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
US11256004B2 (en) 2018-03-20 2022-02-22 Invensas Bonding Technologies, Inc. Direct-bonded lamination for improved image clarity in optical devices
US10991804B2 (en) 2018-03-29 2021-04-27 Xcelsis Corporation Transistor level interconnection methodologies utilizing 3D interconnects
US11056348B2 (en) 2018-04-05 2021-07-06 Invensas Bonding Technologies, Inc. Bonding surfaces for microelectronics
US11244916B2 (en) 2018-04-11 2022-02-08 Invensas Bonding Technologies, Inc. Low temperature bonded structures
US10790262B2 (en) 2018-04-11 2020-09-29 Invensas Bonding Technologies, Inc. Low temperature bonded structures
US10964664B2 (en) 2018-04-20 2021-03-30 Invensas Bonding Technologies, Inc. DBI to Si bonding for simplified handle wafer
US11004757B2 (en) 2018-05-14 2021-05-11 Invensas Bonding Technologies, Inc. Bonded structures
US11276676B2 (en) 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
US10923413B2 (en) 2018-05-30 2021-02-16 Xcelsis Corporation Hard IP blocks with physically bidirectional passageways
US11393779B2 (en) 2018-06-13 2022-07-19 Invensas Bonding Technologies, Inc. Large metal pads over TSV
WO2019241417A1 (en) 2018-06-13 2019-12-19 Invensas Bonding Technologies, Inc. Tsv as pad
US10910344B2 (en) 2018-06-22 2021-02-02 Xcelsis Corporation Systems and methods for releveled bump planes for chiplets
US11664357B2 (en) 2018-07-03 2023-05-30 Adeia Semiconductor Bonding Technologies Inc. Techniques for joining dissimilar materials in microelectronics
WO2020010265A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Microelectronic assemblies
WO2020010136A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Molded direct bonded and interconnected stack
US12406959B2 (en) 2018-07-26 2025-09-02 Adeia Semiconductor Bonding Technologies Inc. Post CMP processing for hybrid bonding
US11515291B2 (en) 2018-08-28 2022-11-29 Adeia Semiconductor Inc. Integrated voltage regulator and passive components
US11296044B2 (en) 2018-08-29 2022-04-05 Invensas Bonding Technologies, Inc. Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes
US11011494B2 (en) 2018-08-31 2021-05-18 Invensas Bonding Technologies, Inc. Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
US11158573B2 (en) 2018-10-22 2021-10-26 Invensas Bonding Technologies, Inc. Interconnect structures
US11244920B2 (en) 2018-12-18 2022-02-08 Invensas Bonding Technologies, Inc. Method and structures for low temperature device bonding
KR20210104742A (ko) 2019-01-14 2021-08-25 인벤사스 본딩 테크놀로지스 인코포레이티드 접합 구조체
US11387202B2 (en) 2019-03-01 2022-07-12 Invensas Llc Nanowire bonding interconnect for fine-pitch microelectronics
US11901281B2 (en) 2019-03-11 2024-02-13 Adeia Semiconductor Bonding Technologies Inc. Bonded structures with integrated passive component
US10854578B2 (en) 2019-03-29 2020-12-01 Invensas Corporation Diffused bitline replacement in stacked wafer memory
US11610846B2 (en) 2019-04-12 2023-03-21 Adeia Semiconductor Bonding Technologies Inc. Protective elements for bonded structures including an obstructive element
US11373963B2 (en) 2019-04-12 2022-06-28 Invensas Bonding Technologies, Inc. Protective elements for bonded structures
US11205625B2 (en) 2019-04-12 2021-12-21 Invensas Bonding Technologies, Inc. Wafer-level bonding of obstructive elements
US11355404B2 (en) 2019-04-22 2022-06-07 Invensas Bonding Technologies, Inc. Mitigating surface damage of probe pads in preparation for direct bonding of a substrate
US11385278B2 (en) 2019-05-23 2022-07-12 Invensas Bonding Technologies, Inc. Security circuitry for bonded structures
US12374641B2 (en) 2019-06-12 2025-07-29 Adeia Semiconductor Bonding Technologies Inc. Sealed bonded structures and methods for forming the same
US11296053B2 (en) 2019-06-26 2022-04-05 Invensas Bonding Technologies, Inc. Direct bonded stack structures for increased reliability and improved yield in microelectronics
US12080672B2 (en) 2019-09-26 2024-09-03 Adeia Semiconductor Bonding Technologies Inc. Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
US12113054B2 (en) 2019-10-21 2024-10-08 Adeia Semiconductor Technologies Llc Non-volatile dynamic random access memory
US11862602B2 (en) 2019-11-07 2024-01-02 Adeia Semiconductor Technologies Llc Scalable architecture for reduced cycles across SOC
US11762200B2 (en) 2019-12-17 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded optical devices
US11876076B2 (en) 2019-12-20 2024-01-16 Adeia Semiconductor Technologies Llc Apparatus for non-volatile random access memory stacks
US11721653B2 (en) 2019-12-23 2023-08-08 Adeia Semiconductor Bonding Technologies Inc. Circuitry for electrical redundancy in bonded structures
CN121793755A (zh) 2019-12-23 2026-04-03 隔热半导体粘合技术公司 用于接合结构的电冗余
CN115943489A (zh) 2020-03-19 2023-04-07 隔热半导体粘合技术公司 用于直接键合结构的尺寸补偿控制
US11742314B2 (en) 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus
US11735523B2 (en) 2020-05-19 2023-08-22 Adeia Semiconductor Bonding Technologies Inc. Laterally unconfined structure
US11631647B2 (en) 2020-06-30 2023-04-18 Adeia Semiconductor Bonding Technologies Inc. Integrated device packages with integrated device die and dummy element
US11728273B2 (en) 2020-09-04 2023-08-15 Adeia Semiconductor Bonding Technologies Inc. Bonded structure with interconnect structure
US11764177B2 (en) 2020-09-04 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded structure with interconnect structure
US11264357B1 (en) 2020-10-20 2022-03-01 Invensas Corporation Mixed exposure for large die
KR20230097121A (ko) 2020-10-29 2023-06-30 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 직접 접합 방법 및 구조체
US12456662B2 (en) 2020-12-28 2025-10-28 Adeia Semiconductor Bonding Technologies Inc. Structures with through-substrate vias and methods for forming the same
WO2022147430A1 (en) 2020-12-28 2022-07-07 Invensas Bonding Technologies, Inc. Structures with through-substrate vias and methods for forming the same
CN116848631A (zh) 2020-12-30 2023-10-03 美商艾德亚半导体接合科技有限公司 具有导电特征的结构及其形成方法
EP4315411A4 (en) 2021-03-31 2025-04-30 Adeia Semiconductor Bonding Technologies Inc. DIRECT BINDING METHODS AND STRUCTURES
JP2024528964A (ja) 2021-08-02 2024-08-01 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド ボンデッド構造体用の保護半導体素子
KR20230041862A (ko) * 2021-09-17 2023-03-27 삼성전자주식회사 반도체 패키지의 제조방법 및 이에 이용되는 보호필름
KR20240059637A (ko) 2021-09-24 2024-05-07 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 능동 인터포저를 가진 결합 구조체
US12604771B2 (en) 2021-10-28 2026-04-14 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures
US12563749B2 (en) 2021-10-28 2026-02-24 Adeia Semiconductor Bonding Technologies Inc Stacked electronic devices
US12557615B2 (en) 2021-12-13 2026-02-17 Adeia Semiconductor Technologies Llc Methods for bonding semiconductor elements
JP2025500315A (ja) 2021-12-20 2025-01-09 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド ダイパッケージの熱電冷却
US12512425B2 (en) 2022-04-25 2025-12-30 Adeia Semiconductor Bonding Technologies Inc. Expansion controlled structure for direct bonding and method of forming same
JP2025517291A (ja) 2022-05-23 2025-06-05 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド ボンデッド構造体のための試験用素子
US12506114B2 (en) 2022-12-29 2025-12-23 Adeia Semiconductor Bonding Technologies Inc. Directly bonded metal structures having aluminum features and methods of preparing same
US12545010B2 (en) 2022-12-29 2026-02-10 Adeia Semiconductor Bonding Technologies Inc. Directly bonded metal structures having oxide layers therein
US12341083B2 (en) 2023-02-08 2025-06-24 Adeia Semiconductor Bonding Technologies Inc. Electronic device cooling structures bonded to semiconductor elements
US12598962B2 (en) * 2023-03-14 2026-04-07 Adeia Semiconductor Bonding Technologies Inc. System and method for bonding transparent conductor substrates
WO2025100244A1 (ja) * 2023-11-07 2025-05-15 東京エレクトロン株式会社 基板処理方法、接合システム、及び半導体装置
WO2025235300A1 (en) * 2024-05-08 2025-11-13 Micron Technology, Inc. Corrosion-susceptible bonding layer in assisting semiconductor wafer debonding
FR3163769A1 (fr) * 2024-06-19 2025-12-26 Commissariat A L' Energie Atomique Et Aux Energies Alternatives Procédé de collage direct de puces

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060264004A1 (en) * 2005-05-23 2006-11-23 Ziptronix, Inc. Method of detachable direct bonding at low temperatures
JP2011003668A (ja) * 2009-06-17 2011-01-06 Seiko Epson Corp 素子の転写方法および電子機器の製造方法
US20160343685A1 (en) * 2015-05-21 2016-11-24 Mediatek Inc. Semiconductor package assembly and method for forming the same
CN107611075A (zh) * 2017-09-04 2018-01-19 华进半导体封装先导技术研发中心有限公司 一种临时键合结构及临时键合方法
JP2020501359A (ja) * 2016-11-30 2020-01-16 プラズマ − サーム、エルエルシー 半導体ウエハーをプラズマ・ダイシングするための方法および装置
JP2020068253A (ja) * 2018-10-23 2020-04-30 株式会社ダイセル 半導体装置製造方法

Family Cites Families (325)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034343A (en) 1990-03-08 1991-07-23 Harris Corporation Manufacturing ultra-thin wafer using a handle wafer
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
CA2083072C (en) * 1991-11-21 1998-02-03 Shinichi Hasegawa Method for manufacturing polyimide multilayer wiring substrate
JPH07193294A (ja) 1993-11-01 1995-07-28 Matsushita Electric Ind Co Ltd 電子部品およびその製造方法
KR960009074A (ko) 1994-08-29 1996-03-22 모리시다 요이치 반도체 장치 및 그 제조방법
JPH09263500A (ja) 1996-01-22 1997-10-07 Komatsu Electron Metals Co Ltd 貼り合わせｓｏｉウェーハの剥がし治具
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
US6159824A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6097096A (en) 1997-07-11 2000-08-01 Advanced Micro Devices Metal attachment method and structure for attaching substrates at low temperatures
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JP3532788B2 (ja) 1999-04-13 2004-05-31 唯知 須賀 半導体装置及びその製造方法
JP2001094005A (ja) 1999-09-22 2001-04-06 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
JP3440057B2 (ja) 2000-07-05 2003-08-25 唯知 須賀 半導体装置およびその製造方法
US6423640B1 (en) 2000-08-09 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Headless CMP process for oxide planarization
TW522531B (en) 2000-10-20 2003-03-01 Matsushita Electric Industrial Co Ltd Semiconductor device, method of manufacturing the device and mehtod of mounting the device
FR2817395B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP2002353416A (ja) 2001-05-25 2002-12-06 Sony Corp 半導体記憶装置およびその製造方法
KR100944886B1 (ko) 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
US6887769B2 (en) 2002-02-06 2005-05-03 Intel Corporation Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same
US6762076B2 (en) 2002-02-20 2004-07-13 Intel Corporation Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
US7105980B2 (en) 2002-07-03 2006-09-12 Sawtek, Inc. Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics
JP4083502B2 (ja) 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド 研磨方法及びそれに用いられる研磨用組成物
US7023093B2 (en) 2002-10-24 2006-04-04 International Business Machines Corporation Very low effective dielectric constant interconnect Structures and methods for fabricating the same
US6962835B2 (en) 2003-02-07 2005-11-08 Ziptronix, Inc. Method for room temperature metal direct bonding
US6908027B2 (en) 2003-03-31 2005-06-21 Intel Corporation Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US6911375B2 (en) 2003-06-02 2005-06-28 International Business Machines Corporation Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
US6992371B2 (en) 2003-10-09 2006-01-31 Freescale Semiconductor, Inc. Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication
US20050082526A1 (en) 2003-10-15 2005-04-21 International Business Machines Corporation Techniques for layer transfer processing
US6867073B1 (en) 2003-10-21 2005-03-15 Ziptronix, Inc. Single mask via method and device
JP4405246B2 (ja) 2003-11-27 2010-01-27 スリーエム イノベイティブ プロパティズ カンパニー 半導体チップの製造方法
US7226812B2 (en) 2004-03-31 2007-06-05 Intel Corporation Wafer support and release in wafer processing
US20060057945A1 (en) 2004-09-16 2006-03-16 Chia-Lin Hsu Chemical mechanical polishing process
US7485968B2 (en) 2005-08-11 2009-02-03 Ziptronix, Inc. 3D IC method and device
US7193423B1 (en) 2005-12-12 2007-03-20 International Business Machines Corporation Wafer-to-wafer alignments
GB2443756B (en) 2006-02-24 2010-03-17 Wolfson Microelectronics Plc MEMS device
US7750488B2 (en) 2006-07-10 2010-07-06 Tezzaron Semiconductor, Inc. Method for bonding wafers to produce stacked integrated circuits
US20080014532A1 (en) 2006-07-14 2008-01-17 3M Innovative Properties Company Laminate body, and method for manufacturing thin substrate using the laminate body
US7795113B2 (en) 2006-12-21 2010-09-14 Imec Method for bonding a die or substrate to a carrier
US7910458B2 (en) 2007-01-29 2011-03-22 Silicon Genesis Corporation Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials
US7803693B2 (en) 2007-02-15 2010-09-28 John Trezza Bowed wafer hybridization compensation
US8349635B1 (en) 2008-05-20 2013-01-08 Silicon Laboratories Inc. Encapsulated MEMS device and method to form the same
US9893004B2 (en) 2011-07-27 2018-02-13 Broadpak Corporation Semiconductor interposer integration
JP5132524B2 (ja) 2008-11-04 2013-01-30 キヤノン株式会社 窒化ガリウム系化合物半導体層の移設方法、及び窒化ガリウム系化合物半導体層が接合された基板
US7867876B2 (en) 2008-12-23 2011-01-11 International Business Machines Corporation Method of thinning a semiconductor substrate
US8476165B2 (en) 2009-04-01 2013-07-02 Tokyo Electron Limited Method for thinning a bonding wafer
US8764026B2 (en) 2009-04-16 2014-07-01 Suss Microtec Lithography, Gmbh Device for centering wafers
FR2950734B1 (fr) 2009-09-28 2011-12-09 Soitec Silicon On Insulator Procede de collage et de transfert d'une couche
US8482132B2 (en) 2009-10-08 2013-07-09 International Business Machines Corporation Pad bonding employing a self-aligned plated liner for adhesion enhancement
JP5517800B2 (ja) 2010-07-09 2014-06-11 キヤノン株式会社 固体撮像装置用の部材および固体撮像装置の製造方法
US8461017B2 (en) 2010-07-19 2013-06-11 Soitec Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
FR2966283B1 (fr) 2010-10-14 2012-11-30 Soi Tec Silicon On Insulator Tech Sa Procede pour realiser une structure de collage
US8377798B2 (en) 2010-11-10 2013-02-19 Taiwan Semiconductor Manufacturing Co., Ltd Method and structure for wafer to wafer bonding in semiconductor packaging
US8620164B2 (en) 2011-01-20 2013-12-31 Intel Corporation Hybrid III-V silicon laser formed by direct bonding
US8796116B2 (en) 2011-01-31 2014-08-05 Sunedison Semiconductor Limited Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
US8716105B2 (en) 2011-03-31 2014-05-06 Soitec Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods
US8501537B2 (en) 2011-03-31 2013-08-06 Soitec Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods
KR101952976B1 (ko) 2011-05-24 2019-02-27 소니 주식회사 반도체 장치
US20130137244A1 (en) 2011-05-26 2013-05-30 Solexel, Inc. Method and apparatus for reconditioning a carrier wafer for reuse
US9947688B2 (en) 2011-06-22 2018-04-17 Psemi Corporation Integrated circuits with components on both sides of a selected substrate and methods of fabrication
JP5982748B2 (ja) 2011-08-01 2016-08-31 ソニー株式会社 半導体装置、半導体装置の製造方法、および電子機器
US8697493B2 (en) 2011-07-18 2014-04-15 Soitec Bonding surfaces for direct bonding of semiconductor structures
US8441131B2 (en) 2011-09-12 2013-05-14 Globalfoundries Inc. Strain-compensating fill patterns for controlling semiconductor chip package interactions
JP5780228B2 (ja) 2011-11-11 2015-09-16 住友ベークライト株式会社 半導体装置の製造方法
US9214353B2 (en) 2012-02-26 2015-12-15 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
US9954080B2 (en) 2012-04-09 2018-04-24 Monolithic 3D Inc. 3D integrated circuit device
CN103377911B (zh) 2012-04-16 2016-09-21 中国科学院微电子研究所 提高化学机械平坦化工艺均匀性的方法
US9048283B2 (en) 2012-06-05 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid bonding systems and methods for semiconductor wafers
US8809123B2 (en) 2012-06-05 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers
US9142517B2 (en) 2012-06-05 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid bonding mechanisms for semiconductor wafers
KR20140019699A (ko) 2012-08-07 2014-02-17 삼성디스플레이 주식회사 플렉시블 유기 발광 표시 장치 및 그 제조방법
TWI492373B (zh) 2012-08-09 2015-07-11 友達光電股份有限公司 可撓式顯示模組的製作方法
US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
JP5685567B2 (ja) 2012-09-28 2015-03-18 株式会社東芝 表示装置の製造方法
US8987057B2 (en) 2012-10-01 2015-03-24 Nxp B.V. Encapsulated wafer-level chip scale (WLSCP) pedestal packaging
KR101276487B1 (ko) 2012-10-05 2013-06-18 주식회사 이녹스 웨이퍼 적층체 및 디바이스 웨이퍼 및 캐리어 웨이퍼의 본딩 및 디본딩 처리 방법
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US20140175655A1 (en) 2012-12-22 2014-06-26 Industrial Technology Research Institute Chip bonding structure and manufacturing method thereof
KR102075635B1 (ko) 2013-01-03 2020-03-02 삼성전자주식회사 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법
KR102077248B1 (ko) 2013-01-25 2020-02-13 삼성전자주식회사 기판 가공 방법
US8946784B2 (en) 2013-02-18 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for image sensor packaging
CN104938025A (zh) 2013-03-08 2015-09-23 富士胶片株式会社 有机el层叠体
US9728453B2 (en) 2013-03-15 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for hybrid wafer bonding integrated with CMOS processing
US8802538B1 (en) 2013-03-15 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for hybrid wafer bonding
BR112015023736A2 (pt) 2013-03-15 2017-07-18 First Solar Inc método para manufaturar dispositivo fotovoltaico
US9443796B2 (en) 2013-03-15 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Air trench in packages incorporating hybrid bonding
US9064937B2 (en) 2013-05-30 2015-06-23 International Business Machines Corporation Substrate bonding with diffusion barrier structures
TWI542261B (zh) 2013-06-06 2016-07-11 群創光電股份有限公司 電子裝置及其製作方法
US9929050B2 (en) 2013-07-16 2018-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming three-dimensional integrated circuit (3DIC) stacking structure
WO2015040784A1 (ja) 2013-09-17 2015-03-26 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
US9723716B2 (en) 2013-09-27 2017-08-01 Infineon Technologies Ag Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure
US9711555B2 (en) 2013-09-27 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Dual facing BSI image sensors with wafer level stacking
US9257399B2 (en) 2013-10-17 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. 3D integrated circuit and methods of forming the same
JP2015115446A (ja) 2013-12-11 2015-06-22 株式会社東芝 半導体装置の製造方法
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
US9437572B2 (en) 2013-12-18 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive pad structure for hybrid bonding and methods of forming same
CN105849215B (zh) 2013-12-26 2019-09-03 日立化成株式会社 临时固定用膜、临时固定用膜片材及半导体装置
US9761493B2 (en) 2014-01-24 2017-09-12 Rutgers, The State University Of New Jersey Thin epitaxial silicon carbide wafer fabrication
SG11201606059WA (en) 2014-01-27 2016-08-30 Corning Inc Articles and methods for controlled bonding of polymer surfaces with carriers
KR102334815B1 (ko) 2014-02-19 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 박리 방법
US20150262902A1 (en) 2014-03-12 2015-09-17 Invensas Corporation Integrated circuits protected by substrates with cavities, and methods of manufacture
CN106165074B (zh) 2014-03-19 2020-05-12 三星电子株式会社 制造半导体装置的方法
US9190345B1 (en) 2014-03-28 2015-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US9299736B2 (en) 2014-03-28 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid bonding with uniform pattern density
US9230941B2 (en) 2014-03-28 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding structure for stacked semiconductor devices
JP6210152B2 (ja) 2014-04-10 2017-10-11 富士電機株式会社 半導体基板の処理方法及び該処理方法を用いる半導体装置の製造方法
US9472458B2 (en) 2014-06-04 2016-10-18 Semiconductor Components Industries, Llc Method of reducing residual contamination in singulated semiconductor die
US9786643B2 (en) 2014-07-08 2017-10-10 Micron Technology, Inc. Semiconductor devices comprising protected side surfaces and related methods
KR102275705B1 (ko) 2014-07-11 2021-07-09 삼성전자주식회사 웨이퍼 대 웨이퍼 접합 구조
KR102305505B1 (ko) 2014-09-29 2021-09-24 삼성전자주식회사 웨이퍼 서포팅 시스템 디본딩 이니시에이터 및 웨이퍼 서포팅 시스템 디본딩 방법
US9536848B2 (en) 2014-10-16 2017-01-03 Globalfoundries Inc. Bond pad structure for low temperature flip chip bonding
US20160133486A1 (en) 2014-11-07 2016-05-12 International Business Machines Corporation Double Layer Release Temporary Bond and Debond Processes and Systems
US9394161B2 (en) 2014-11-14 2016-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. MEMS and CMOS integration with low-temperature bonding
KR102327141B1 (ko) 2014-11-19 2021-11-16 삼성전자주식회사 프리패키지 및 이를 사용한 반도체 패키지의 제조 방법
KR20160067517A (ko) 2014-12-04 2016-06-14 삼성전자주식회사 반도체 소자의 제조방법
US9397001B2 (en) 2014-12-11 2016-07-19 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing electronic device comprising a resin substrate and an electronic component
US11069734B2 (en) 2014-12-11 2021-07-20 Invensas Corporation Image sensor device
US9991150B2 (en) 2014-12-12 2018-06-05 Micro Materials Inc. Procedure of processing a workpiece and an apparatus designed for the procedure
JP2016146395A (ja) 2015-02-06 2016-08-12 株式会社テラプローブ 半導体装置の製造方法及び半導体装置
JP6450451B2 (ja) 2015-03-23 2019-01-09 富士フイルム株式会社 キットおよび積層体
US9741620B2 (en) 2015-06-24 2017-08-22 Invensas Corporation Structures and methods for reliable packages
US9656852B2 (en) 2015-07-06 2017-05-23 Taiwan Semiconductor Manufacturing Company Ltd. CMOS-MEMS device structure, bonding mesa structure and associated method
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US10075657B2 (en) 2015-07-21 2018-09-11 Fermi Research Alliance, Llc Edgeless large area camera system
US9728521B2 (en) 2015-07-23 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid bond using a copper alloy for yield improvement
US9559081B1 (en) 2015-08-21 2017-01-31 Apple Inc. Independent 3D stacking
US9953941B2 (en) 2015-08-25 2018-04-24 Invensas Bonding Technologies, Inc. Conductive barrier direct hybrid bonding
JP2017054861A (ja) 2015-09-07 2017-03-16 株式会社東芝 半導体装置の製造方法
US10032751B2 (en) 2015-09-28 2018-07-24 Invensas Corporation Ultrathin layer for forming a capacitive interface between joined integrated circuit components
US10181546B2 (en) 2015-11-04 2019-01-15 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-LED
US9496239B1 (en) 2015-12-11 2016-11-15 International Business Machines Corporation Nitride-enriched oxide-to-oxide 3D wafer bonding
US9852988B2 (en) 2015-12-18 2017-12-26 Invensas Bonding Technologies, Inc. Increased contact alignment tolerance for direct bonding
US10224219B2 (en) 2015-12-30 2019-03-05 International Business Machines Corporation Handler bonding and debonding for semiconductor dies
US9923011B2 (en) 2016-01-12 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with stacked semiconductor dies
US10446532B2 (en) 2016-01-13 2019-10-15 Invensas Bonding Technologies, Inc. Systems and methods for efficient transfer of semiconductor elements
US10026716B2 (en) 2016-04-15 2018-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC formation with dies bonded to formed RDLs
US10204893B2 (en) 2016-05-19 2019-02-12 Invensas Bonding Technologies, Inc. Stacked dies and methods for forming bonded structures
KR102505856B1 (ko) 2016-06-09 2023-03-03 삼성전자 주식회사 웨이퍼 대 웨이퍼 접합 구조체
US9941241B2 (en) 2016-06-30 2018-04-10 International Business Machines Corporation Method for wafer-wafer bonding
US9892961B1 (en) 2016-08-09 2018-02-13 International Business Machines Corporation Air gap spacer formation for nano-scale semiconductor devices
CN109564851A (zh) 2016-08-31 2019-04-02 株式会社半导体能源研究所 半导体装置的制造方法
US10446487B2 (en) 2016-09-30 2019-10-15 Invensas Bonding Technologies, Inc. Interface structures and methods for forming same
US10672663B2 (en) 2016-10-07 2020-06-02 Xcelsis Corporation 3D chip sharing power circuit
US10607136B2 (en) 2017-08-03 2020-03-31 Xcelsis Corporation Time borrowing between layers of a three dimensional chip stack
US10580735B2 (en) 2016-10-07 2020-03-03 Xcelsis Corporation Stacked IC structure with system level wiring on multiple sides of the IC die
KR102335714B1 (ko) 2016-10-24 2021-12-06 글로 에이비 발광 다이오드, 디스플레이 소자 및 직시형 디스플레이 소자
US10155369B2 (en) 2016-11-29 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer debonding system and method
US10163750B2 (en) 2016-12-05 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure for heat dissipation
JP6512454B2 (ja) 2016-12-06 2019-05-15 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
US10453832B2 (en) 2016-12-15 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structures and methods of forming same
US10002844B1 (en) 2016-12-21 2018-06-19 Invensas Bonding Technologies, Inc. Bonded structures
US20180182665A1 (en) 2016-12-28 2018-06-28 Invensas Bonding Technologies, Inc. Processed Substrate
WO2018125673A2 (en) 2016-12-28 2018-07-05 Invensas Bonding Technologies, Inc Processing stacked substrates
US20180190583A1 (en) 2016-12-29 2018-07-05 Invensas Bonding Technologies, Inc. Bonded structures with integrated passive component
TWI837879B (zh) 2016-12-29 2024-04-01 美商艾德亞半導體接合科技有限公司 具有整合式被動構件的接合結構
US10276909B2 (en) 2016-12-30 2019-04-30 Invensas Bonding Technologies, Inc. Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein
US10431614B2 (en) 2017-02-01 2019-10-01 Semiconductor Components Industries, Llc Edge seals for semiconductor packages
JP7030825B2 (ja) 2017-02-09 2022-03-07 インヴェンサス ボンディング テクノロジーズ インコーポレイテッド 接合構造物
US10629577B2 (en) 2017-03-16 2020-04-21 Invensas Corporation Direct-bonded LED arrays and applications
US10515913B2 (en) 2017-03-17 2019-12-24 Invensas Bonding Technologies, Inc. Multi-metal contact structure
US10937719B2 (en) 2017-03-20 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of fabricating the same
US10508030B2 (en) 2017-03-21 2019-12-17 Invensas Bonding Technologies, Inc. Seal for microelectronic assembly
JP6640780B2 (ja) 2017-03-22 2020-02-05 キオクシア株式会社 半導体装置の製造方法および半導体装置
WO2018183739A1 (en) 2017-03-31 2018-10-04 Invensas Bonding Technologies, Inc. Interface structures and methods for forming same
US10854568B2 (en) * 2017-04-07 2020-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Packages with Si-substrate-free interposer and method forming same
US10515837B2 (en) 2017-04-13 2019-12-24 Raytheon Company Method of wafer bonding of dissimilar thickness die
US10269756B2 (en) 2017-04-21 2019-04-23 Invensas Bonding Technologies, Inc. Die processing
US10580823B2 (en) 2017-05-03 2020-03-03 United Microelectronics Corp. Wafer level packaging method
US10879212B2 (en) 2017-05-11 2020-12-29 Invensas Bonding Technologies, Inc. Processed stacked dies
US10453711B2 (en) 2017-05-31 2019-10-22 Facebook Technologies, Llc Fluidic pick-up head for small semiconductor devices
US10446441B2 (en) 2017-06-05 2019-10-15 Invensas Corporation Flat metal features for microelectronics applications
US10217720B2 (en) 2017-06-15 2019-02-26 Invensas Corporation Multi-chip modules formed using wafer-level processing of a reconstitute wafer
US10217637B1 (en) 2017-09-20 2019-02-26 International Business Machines Corporation Chip handling and electronic component integration
US10840205B2 (en) 2017-09-24 2020-11-17 Invensas Bonding Technologies, Inc. Chemical mechanical polishing for hybrid bonding
US11195748B2 (en) 2017-09-27 2021-12-07 Invensas Corporation Interconnect structures and methods for forming same
US11031285B2 (en) 2017-10-06 2021-06-08 Invensas Bonding Technologies, Inc. Diffusion barrier collar for interconnects
US11251157B2 (en) 2017-11-01 2022-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Die stack structure with hybrid bonding structure and method of fabricating the same and package
US10529693B2 (en) 2017-11-29 2020-01-07 Advanced Micro Devices, Inc. 3D stacked dies with disparate interconnect footprints
US11011503B2 (en) 2017-12-15 2021-05-18 Invensas Bonding Technologies, Inc. Direct-bonded optoelectronic interconnect for high-density integrated photonics
US11380597B2 (en) 2017-12-22 2022-07-05 Invensas Bonding Technologies, Inc. Bonded structures
US10923408B2 (en) 2017-12-22 2021-02-16 Invensas Bonding Technologies, Inc. Cavity packages
US10446431B2 (en) 2017-12-27 2019-10-15 Micron Technology, Inc. Temporary carrier debond initiation, and associated systems and methods
US11127738B2 (en) 2018-02-09 2021-09-21 Xcelsis Corporation Back biasing of FD-SOI circuit blocks
US10727219B2 (en) 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
US11169326B2 (en) 2018-02-26 2021-11-09 Invensas Bonding Technologies, Inc. Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
US11274234B2 (en) 2018-03-08 2022-03-15 Chengdu Eswin Sip Technology Co., Ltd. Adhesive composition for temporary bonding of semiconductor workpiece and support carrier pair
US11256004B2 (en) 2018-03-20 2022-02-22 Invensas Bonding Technologies, Inc. Direct-bonded lamination for improved image clarity in optical devices
US10991804B2 (en) 2018-03-29 2021-04-27 Xcelsis Corporation Transistor level interconnection methodologies utilizing 3D interconnects
US11056348B2 (en) 2018-04-05 2021-07-06 Invensas Bonding Technologies, Inc. Bonding surfaces for microelectronics
US10790262B2 (en) 2018-04-11 2020-09-29 Invensas Bonding Technologies, Inc. Low temperature bonded structures
US10964664B2 (en) 2018-04-20 2021-03-30 Invensas Bonding Technologies, Inc. DBI to Si bonding for simplified handle wafer
US11398258B2 (en) 2018-04-30 2022-07-26 Invensas Llc Multi-die module with low power operation
US10403577B1 (en) 2018-05-03 2019-09-03 Invensas Corporation Dielets on flexible and stretchable packaging for microelectronics
US11004757B2 (en) 2018-05-14 2021-05-11 Invensas Bonding Technologies, Inc. Bonded structures
US11276676B2 (en) 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
US10923413B2 (en) 2018-05-30 2021-02-16 Xcelsis Corporation Hard IP blocks with physically bidirectional passageways
US11171117B2 (en) 2018-06-12 2021-11-09 Invensas Bonding Technologies, Inc. Interlayer connection of stacked microelectronic components
US11393779B2 (en) 2018-06-13 2022-07-19 Invensas Bonding Technologies, Inc. Large metal pads over TSV
WO2019241417A1 (en) 2018-06-13 2019-12-19 Invensas Bonding Technologies, Inc. Tsv as pad
US10910344B2 (en) 2018-06-22 2021-02-02 Xcelsis Corporation Systems and methods for releveled bump planes for chiplets
US11664357B2 (en) 2018-07-03 2023-05-30 Adeia Semiconductor Bonding Technologies Inc. Techniques for joining dissimilar materials in microelectronics
WO2020010265A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Microelectronic assemblies
WO2020010136A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Molded direct bonded and interconnected stack
US12406959B2 (en) 2018-07-26 2025-09-02 Adeia Semiconductor Bonding Technologies Inc. Post CMP processing for hybrid bonding
US11515291B2 (en) 2018-08-28 2022-11-29 Adeia Semiconductor Inc. Integrated voltage regulator and passive components
US11296044B2 (en) 2018-08-29 2022-04-05 Invensas Bonding Technologies, Inc. Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes
US11011494B2 (en) 2018-08-31 2021-05-18 Invensas Bonding Technologies, Inc. Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
US10867879B2 (en) 2018-09-28 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit package and method
US11158573B2 (en) 2018-10-22 2021-10-26 Invensas Bonding Technologies, Inc. Interconnect structures
US11244920B2 (en) 2018-12-18 2022-02-08 Invensas Bonding Technologies, Inc. Method and structures for low temperature device bonding
KR20210104742A (ko) 2019-01-14 2021-08-25 인벤사스 본딩 테크놀로지스 인코포레이티드 접합 구조체
WO2020159856A1 (en) 2019-01-28 2020-08-06 Amerasia International Technology, Inc. Semiconductor wafer processing system and method
US11387202B2 (en) 2019-03-01 2022-07-12 Invensas Llc Nanowire bonding interconnect for fine-pitch microelectronics
US11901281B2 (en) 2019-03-11 2024-02-13 Adeia Semiconductor Bonding Technologies Inc. Bonded structures with integrated passive component
US10854578B2 (en) 2019-03-29 2020-12-01 Invensas Corporation Diffused bitline replacement in stacked wafer memory
US11610846B2 (en) 2019-04-12 2023-03-21 Adeia Semiconductor Bonding Technologies Inc. Protective elements for bonded structures including an obstructive element
US11373963B2 (en) 2019-04-12 2022-06-28 Invensas Bonding Technologies, Inc. Protective elements for bonded structures
US11205625B2 (en) 2019-04-12 2021-12-21 Invensas Bonding Technologies, Inc. Wafer-level bonding of obstructive elements
US11355404B2 (en) 2019-04-22 2022-06-07 Invensas Bonding Technologies, Inc. Mitigating surface damage of probe pads in preparation for direct bonding of a substrate
US11385278B2 (en) 2019-05-23 2022-07-12 Invensas Bonding Technologies, Inc. Security circuitry for bonded structures
US12374641B2 (en) 2019-06-12 2025-07-29 Adeia Semiconductor Bonding Technologies Inc. Sealed bonded structures and methods for forming the same
US11164848B2 (en) * 2019-06-20 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method manufacturing the same
US11296053B2 (en) 2019-06-26 2022-04-05 Invensas Bonding Technologies, Inc. Direct bonded stack structures for increased reliability and improved yield in microelectronics
US12080672B2 (en) 2019-09-26 2024-09-03 Adeia Semiconductor Bonding Technologies Inc. Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
US11011669B2 (en) 2019-10-14 2021-05-18 Shaoher Pan Integrated active-matrix light emitting pixel arrays based devices
US12113054B2 (en) 2019-10-21 2024-10-08 Adeia Semiconductor Technologies Llc Non-volatile dynamic random access memory
US11862602B2 (en) 2019-11-07 2024-01-02 Adeia Semiconductor Technologies Llc Scalable architecture for reduced cycles across SOC
KR102373098B1 (ko) 2020-04-14 2022-03-14 웨이브로드 주식회사 반도체 발광소자
US11762200B2 (en) 2019-12-17 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded optical devices
US11876076B2 (en) 2019-12-20 2024-01-16 Adeia Semiconductor Technologies Llc Apparatus for non-volatile random access memory stacks
US11721653B2 (en) 2019-12-23 2023-08-08 Adeia Semiconductor Bonding Technologies Inc. Circuitry for electrical redundancy in bonded structures
CN121793755A (zh) 2019-12-23 2026-04-03 隔热半导体粘合技术公司 用于接合结构的电冗余
EP3852140A1 (en) 2020-01-20 2021-07-21 Infineon Technologies Austria AG Silicon carbide power semiconductor device with a diffusion soldered joint comprising ni3sn4 and a corresponding fabrication method
US20210242152A1 (en) 2020-02-05 2021-08-05 Invensas Bonding Technologies, Inc. Selective alteration of interconnect pads for direct bonding
CN115943489A (zh) 2020-03-19 2023-04-07 隔热半导体粘合技术公司 用于直接键合结构的尺寸补偿控制
US11742314B2 (en) 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus
CN112968078B (zh) 2020-05-18 2022-03-01 重庆康佳光电技术研究院有限公司 一种微型发光二极体转移方法及显示装置
US11735523B2 (en) 2020-05-19 2023-08-22 Adeia Semiconductor Bonding Technologies Inc. Laterally unconfined structure
CN111584519B (zh) 2020-05-25 2024-01-23 京东方科技集团股份有限公司 驱动背板、发光二极管芯片的转移方法及显示装置
US11631647B2 (en) 2020-06-30 2023-04-18 Adeia Semiconductor Bonding Technologies Inc. Integrated device packages with integrated device die and dummy element
US11764177B2 (en) 2020-09-04 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded structure with interconnect structure
US11728273B2 (en) 2020-09-04 2023-08-15 Adeia Semiconductor Bonding Technologies Inc. Bonded structure with interconnect structure
US11264357B1 (en) 2020-10-20 2022-03-01 Invensas Corporation Mixed exposure for large die
KR20230097121A (ko) 2020-10-29 2023-06-30 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 직접 접합 방법 및 구조체
CN116635998A (zh) 2020-10-29 2023-08-22 美商艾德亚半导体接合科技有限公司 直接键合方法和结构
WO2022102182A1 (ja) 2020-11-11 2022-05-19 三井金属鉱業株式会社 配線基板の製造方法
WO2022147430A1 (en) 2020-12-28 2022-07-07 Invensas Bonding Technologies, Inc. Structures with through-substrate vias and methods for forming the same
US12456662B2 (en) 2020-12-28 2025-10-28 Adeia Semiconductor Bonding Technologies Inc. Structures with through-substrate vias and methods for forming the same
US20220208723A1 (en) 2020-12-30 2022-06-30 Invensas Bonding Technologies, Inc. Directly bonded structures
CN116848631A (zh) 2020-12-30 2023-10-03 美商艾德亚半导体接合科技有限公司 具有导电特征的结构及其形成方法
KR20230153446A (ko) 2021-03-03 2023-11-06 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 직접 결합을 위한 접촉 구조
JP2024515032A (ja) * 2021-03-31 2024-04-04 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 担体の直接接合及び剥離
EP4315411A4 (en) 2021-03-31 2025-04-30 Adeia Semiconductor Bonding Technologies Inc. DIRECT BINDING METHODS AND STRUCTURES
KR20240028356A (ko) 2021-06-30 2024-03-05 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 결합층에서 라우팅 구조체를 갖는 소자
KR20240036032A (ko) 2021-07-16 2024-03-19 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 접합된 구조물의 광학적 차단 보호 요소
JP2024528964A (ja) 2021-08-02 2024-08-01 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド ボンデッド構造体用の保護半導体素子
JP2024532903A (ja) 2021-09-01 2024-09-10 アデイア セミコンダクター テクノロジーズ リミテッド ライアビリティ カンパニー インターポーザを備えた積層構造
US20230067677A1 (en) 2021-09-01 2023-03-02 Invensas Bonding Technologies, Inc. Sequences and equipment for direct bonding
WO2023044308A1 (en) 2021-09-14 2023-03-23 Adeia Semiconductor Bonding Technologies Inc. Method of bonding thin substrates
KR20240059637A (ko) 2021-09-24 2024-05-07 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 능동 인터포저를 가진 결합 구조체
JP2024538179A (ja) 2021-10-18 2024-10-18 アデイア セミコンダクター テクノロジーズ リミテッド ライアビリティ カンパニー 結合構造における寄生容量の低減
KR20240090512A (ko) 2021-10-19 2024-06-21 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 멀티-다이 스태킹에서의 적층된 인덕터
EP4420197A4 (en) 2021-10-22 2025-09-10 Adeia Semiconductor Tech Llc RADIO FREQUENCY DEVICE HOUSINGS
JP2024541923A (ja) 2021-10-25 2024-11-13 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 積層化電子デバイス用の電力分配
US20230125395A1 (en) 2021-10-27 2023-04-27 Adeia Semiconductor Bonding Technologies Inc. Stacked structures with capacitive coupling connections
EP4423806A4 (en) 2021-10-28 2025-09-24 Adeia Semiconductor Bonding Technologies Inc DIFFUSION BARRIERS AND ASSOCIATED FORMATION METHOD
US12563749B2 (en) 2021-10-28 2026-02-24 Adeia Semiconductor Bonding Technologies Inc Stacked electronic devices
US12604771B2 (en) 2021-10-28 2026-04-14 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures
JP2024537478A (ja) 2021-11-05 2024-10-10 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド マルチチャンネル型デバイス積層化
US20230154816A1 (en) 2021-11-17 2023-05-18 Adeia Semiconductor Bonding Technologies Inc. Thermal bypass for stacked dies
US20230154828A1 (en) 2021-11-18 2023-05-18 Adeia Semiconductor Bonding Technologies Inc. Fluid cooling for die stacks
WO2023114726A1 (en) 2021-12-13 2023-06-22 Adeia Semiconductor Bonding Technologies Inc. Interconnect structures
US12557615B2 (en) 2021-12-13 2026-02-17 Adeia Semiconductor Technologies Llc Methods for bonding semiconductor elements
US20230197453A1 (en) 2021-12-17 2023-06-22 Adeia Semiconductor Bonding Technologies Inc. Structure with conductive feature for direct bonding and method of forming same
EP4454005A4 (en) 2021-12-20 2026-05-06 Adeia Semiconductor Bonding Technologies Inc Direct bonding and debonding of elements
JP2025500315A (ja) 2021-12-20 2025-01-09 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド ダイパッケージの熱電冷却
WO2023122510A1 (en) 2021-12-20 2023-06-29 Adeia Semiconductor Bonding Technologies Inc. Thermoelectric cooling in microelectronics
JP2024545315A (ja) 2021-12-22 2024-12-05 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 低応力直接ハイブリッド接合
CN118613905A (zh) 2021-12-23 2024-09-06 美商艾德亚半导体接合科技有限公司 用于管芯键合控制的装置和方法
EP4454008A4 (en) 2021-12-23 2025-11-05 Adeia Semiconductor Bonding Technologies Inc DIRECT CONNECTION TO ENCLOSURE SUBSTRATES
EP4454013A4 (en) 2021-12-23 2025-07-30 Adeia Semiconductor Bonding Technologies Inc LINKED STRUCTURES COMPRISING INTERCONNECTING ASSEMBLIES
US20230207402A1 (en) 2021-12-27 2023-06-29 Adeia Semiconductor Bonding Technologies Inc. Directly bonded frame wafers
WO2023147502A1 (en) 2022-01-31 2023-08-03 Adeia Semiconductor Bonding Technologies Inc. Heat dissipating system for electronic devices
KR20240156613A (ko) 2022-02-24 2024-10-30 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 결합 구조체
US20230299029A1 (en) 2022-03-16 2023-09-21 Adeia Semiconductor Bonding Technologies Inc. Expansion control for bonding
US12512425B2 (en) 2022-04-25 2025-12-30 Adeia Semiconductor Bonding Technologies Inc. Expansion controlled structure for direct bonding and method of forming same
US20230360950A1 (en) 2022-05-05 2023-11-09 Adeia Semiconductor Bonding Technologies Inc. Gang-flipping of dies prior to bonding
WO2023215598A1 (en) 2022-05-05 2023-11-09 Adeia Semiconductor Bonding Technologies Inc. Low temperature direct bonding
US20230369136A1 (en) 2022-05-13 2023-11-16 Adeia Semiconductor Bonding Technologies Inc. Bonding surface validation on dicing tape
JP2025517291A (ja) 2022-05-23 2025-06-05 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド ボンデッド構造体のための試験用素子
US20240038702A1 (en) 2022-07-27 2024-02-01 Adeia Semiconductor Bonding Technologies Inc. High-performance hybrid bonded interconnect systems
US20240055407A1 (en) 2022-08-11 2024-02-15 Adeia Semiconductor Bonding Technologies Inc. Bonded debugging elements for integrated circuits and methods for debugging integrated circuits using same
WO2024054803A1 (en) 2022-09-07 2024-03-14 Adeia Semiconductor Bonding Technologies Inc. Bonded structure and method of forming same
WO2024054799A1 (en) 2022-09-07 2024-03-14 Adeia Semiconductor Bonding Technologies Inc. Rapid thermal processing for direct bonding
US20240170411A1 (en) 2022-11-18 2024-05-23 Adeia Semiconductor Bonding Technologies Inc. Scribe lane reinforcement
US20240186248A1 (en) 2022-12-01 2024-06-06 Adeia Semiconductor Bonding Technologies Inc. Backside power delivery network
JP2025537971A (ja) 2022-12-01 2025-11-20 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド フレーム構造体付きのダイレクトボンデッド構造体
US20240186269A1 (en) 2022-12-02 2024-06-06 Adeia Semiconductor Bonding Technologies Inc. Bonded structure with security die
US20240213210A1 (en) 2022-12-23 2024-06-27 Adeia Semiconductor Bonding Technologies Inc. System and method for using acoustic waves to counteract deformations during bonding
US20240222319A1 (en) 2022-12-28 2024-07-04 Adeia Semiconductor Bonding Technologies Inc. Debonding repair devices
US12545010B2 (en) 2022-12-29 2026-02-10 Adeia Semiconductor Bonding Technologies Inc. Directly bonded metal structures having oxide layers therein
US12506114B2 (en) 2022-12-29 2025-12-23 Adeia Semiconductor Bonding Technologies Inc. Directly bonded metal structures having aluminum features and methods of preparing same
US12341083B2 (en) 2023-02-08 2025-06-24 Adeia Semiconductor Bonding Technologies Inc. Electronic device cooling structures bonded to semiconductor elements
US20240298454A1 (en) 2023-03-01 2024-09-05 Adeia Semiconductor Bonding Technologies Inc. Multichannel memory with serdes
US20240304593A1 (en) 2023-03-06 2024-09-12 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures
US12598962B2 (en) 2023-03-14 2026-04-07 Adeia Semiconductor Bonding Technologies Inc. System and method for bonding transparent conductor substrates
US20240332183A1 (en) 2023-03-31 2024-10-03 Adeia Semiconductor Bonding Technologies, Inc. Direct bonding on buried power rails
US20240332231A1 (en) 2023-03-31 2024-10-03 Adeia Semiconductor Bonding Technologies Inc. Direct hybrid bonding in topographic packages
CN121127971A (zh) 2023-03-31 2025-12-12 艾德亚半导体接合科技有限公司 用于背侧功率递送网络的内插层
US20240332227A1 (en) 2023-03-31 2024-10-03 Adeia Semiconductor Bonding Technologies Inc Semiconductor element with bonding layer having low-k dielectric material
US20240387419A1 (en) 2023-05-18 2024-11-21 Adeia Semiconductor Bonding Technologies Inc. Direct hybrid bond pad having tapered sidewall
US20250006674A1 (en) 2023-06-30 2025-01-02 Adeia Semiconductor Bonding Technologies Inc. Methods and structures for low temperature hybrid bonding
US20250006689A1 (en) 2023-06-30 2025-01-02 Adeia Semiconductor Bonding Technologies Inc. Structures and methods for bonding dies
US20250054854A1 (en) 2023-06-30 2025-02-13 Adeia Semiconductor Bonding Technologies Inc. Heavily doped semiconductor devices for power distribution
US20250006642A1 (en) 2023-06-30 2025-01-02 Adeia Semiconductor Bonding Technologies Inc. Chiplet-to-chiplet protocol switch
US20250006632A1 (en) 2023-06-30 2025-01-02 Adeia Semiconductor Bonding Technologies Inc. Embedded chiplets with backside power delivery network
US20250006679A1 (en) 2023-06-30 2025-01-02 Adeia Semiconductor Bonding Technologies Inc. Conductive materials for direct bonding
US20250004197A1 (en) 2023-06-30 2025-01-02 Adeia Semiconductor Bonding Technologies Inc. Directly bonded optical components
US20250079364A1 (en) 2023-09-06 2025-03-06 Adeia Semiconductor Bonding Technologies Inc. Methods and structures employing metal oxide for direct metal bonding
US20250096191A1 (en) 2023-09-18 2025-03-20 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures for dies
US20250185163A1 (en) 2023-12-05 2025-06-05 Adeia Semiconductor Bonding Technologies Inc. Organic-to-inorganic bonding methods and structures
US20250218903A1 (en) 2023-12-28 2025-07-03 Adeia Semiconductor Bonding Technologies Inc. Via reveal processing and structures

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060264004A1 (en) * 2005-05-23 2006-11-23 Ziptronix, Inc. Method of detachable direct bonding at low temperatures
JP2011003668A (ja) * 2009-06-17 2011-01-06 Seiko Epson Corp 素子の転写方法および電子機器の製造方法
US20160343685A1 (en) * 2015-05-21 2016-11-24 Mediatek Inc. Semiconductor package assembly and method for forming the same
JP2020501359A (ja) * 2016-11-30 2020-01-16 プラズマ − サーム、エルエルシー 半導体ウエハーをプラズマ・ダイシングするための方法および装置
CN107611075A (zh) * 2017-09-04 2018-01-19 华进半导体封装先导技术研发中心有限公司 一种临时键合结构及临时键合方法
JP2020068253A (ja) * 2018-10-23 2020-04-30 株式会社ダイセル 半導体装置製造方法

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