JP2022505694A - 極紫外線マスク吸収体用のta‐cu合金 - Google Patents
極紫外線マスク吸収体用のta‐cu合金 Download PDFInfo
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- JP2022505694A JP2022505694A JP2021522339A JP2021522339A JP2022505694A JP 2022505694 A JP2022505694 A JP 2022505694A JP 2021522339 A JP2021522339 A JP 2021522339A JP 2021522339 A JP2021522339 A JP 2021522339A JP 2022505694 A JP2022505694 A JP 2022505694A
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 107
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 52
- 239000010949 copper Substances 0.000 claims abstract description 104
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 229910001362 Ta alloys Inorganic materials 0.000 claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 68
- 229910052715 tantalum Inorganic materials 0.000 claims description 63
- 229910052802 copper Inorganic materials 0.000 claims description 59
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 59
- 229910045601 alloy Inorganic materials 0.000 claims description 46
- 239000000956 alloy Substances 0.000 claims description 46
- 229910052786 argon Inorganic materials 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- CIYRLONPFMPRLH-UHFFFAOYSA-N copper tantalum Chemical compound [Cu].[Ta] CIYRLONPFMPRLH-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 242
- 239000000463 material Substances 0.000 description 38
- 230000006837 decompression Effects 0.000 description 22
- 238000000151 deposition Methods 0.000 description 21
- 230000008021 deposition Effects 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 14
- -1 for example Substances 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000012071 phase Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005289 physical deposition Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- SLYSCVGKSGZCPI-UHFFFAOYSA-N [B]=O.[Ta] Chemical compound [B]=O.[Ta] SLYSCVGKSGZCPI-UHFFFAOYSA-N 0.000 description 1
- WOUPYJKFGJZQMH-UHFFFAOYSA-N [Nb].[Ru] Chemical compound [Nb].[Ru] WOUPYJKFGJZQMH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000995 aerosol-assisted chemical vapour deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- AJTVWPGZWVJMEA-UHFFFAOYSA-N ruthenium tungsten Chemical compound [Ru].[Ru].[W].[W].[W] AJTVWPGZWVJMEA-UHFFFAOYSA-N 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (15)
- 基板、
前記基板上の反射層の多層積層体であって、反射層対を含む複数の反射層を含む反射層の多層積層体、
反射する層の前記多層積層体上のキャッピング層、及び
タンタルと銅との合金を含む吸収体層を含む、極紫外線(EUV)マスクブランク。 - 前記タンタルと銅との合金が、約50から約85重量%のタンタルと約15から50重量%の銅、又は約60.5から約72.7重量%のタンタルと約27.3から約39.5重量%の銅とを含む、タンタルに富む合金である、請求項1に記載の極紫外線(EUV)マスクブランク。
- 前記タンタルと銅との合金が、約65から約95重量%の銅と約5から約35重量%のタンタル、又は約80.7から約83.3重量%の銅と約27.3から約39.5重量%のタンタルとを含む、銅に富む合金である、請求項1に記載の極紫外線(EUV)マスクブランク。
- 前記吸収体層が、45nm未満の厚さを有する、請求項1に記載の極紫外線(EUV)マスクブランク。
- 前記吸収体層が、約2%未満の反射率を有し、前記キャッピング層に対してエッチング選択性である、請求項1に記載の極紫外線(EUV)マスクブランク。
- 前記吸収体層が、窒素又は酸素のうちの1以上から選択された、0.1重量%から約5重量%のドーパントを更に含む、請求項1に記載の極紫外線(EUV)マスクブランク。
- TiNを含む第2の吸収体層を更に含む、請求項1に記載の極紫外線(EUV)マスクブランク。
- 極紫外線(EUV)マスクブランクを製造する方法であって、
基板を提供すること、
前記基板上に反射層の多層積層体であって、複数の反射層対を含む反射層の多層積層体を形成すること、
前記反射層の多層積層体上にキャッピング層を形成すること、及び
前記キャッピング層上に吸収体層であって、タンタルと銅との合金を含む吸収体層を形成することを含む、方法。 - 前記タンタルと銅との合金が、約50から約85重量%のタンタルと約15から約50重量%の銅、又は約60.5から約72.7重量%のタンタルと約27.3から約39.5重量%の銅とを含む、タンタルに富む合金である、請求項8に記載の方法。
- 前記タンタルと銅との合金が、約65から約95重量%の銅と約5から約35重量%のタンタル、又は約80.7から約83.3重量%の銅と約27.3から約39.5重量%のタンタルとを含む、銅に富む合金である、請求項8に記載の方法。
- 前記タンタルと銅との合金が、アルゴン(Ar)、酸素(O2)、又は窒素(N2)のうちの1以上から選択されたガスによって同時スパッタリングされて、前記吸収体層を形成する、請求項8に記載の方法。
- 前記タンタルと銅との合金が、前記タンタルと銅との合金と同じ組成を有するバルクターゲットを使用して堆積され、アルゴン(Ar)、酸素(O2)、又は窒素(N2)のうちの1以上から選択されたガスを使用してスパッタリングされて、前記吸収体層を形成する、請求項8に記載の方法。
- 極紫外線光源、並びに
基板を含むレチクルであって、集積回路の処理層を表すパターンを有し、前記基板の上の多層積層体と、前記多層積層体の上の吸収体層であって、80nm未満の厚さ、及び13.5nmの波長における2%未満の極紫外線(EUV)光の反射率を有し、タンタルと銅との合金を含む吸収体層とを含む、レチクルを備える、極紫外線(EUV)リソグラフィシステム。 - 前記多層積層体と前記吸収体層との間に、前記多層積層体を保護するためのキャッピング層を更に含む、請求項13に記載のシステム。
- 前記吸収体層上に反射防止コーティングを更に含む、請求項13に記載のシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862750915P | 2018-10-26 | 2018-10-26 | |
US62/750,915 | 2018-10-26 | ||
US16/662,753 | 2019-10-24 | ||
US16/662,753 US11209727B2 (en) | 2018-10-26 | 2019-10-24 | Ta—Cu alloy material for extreme ultraviolet mask absorber |
PCT/US2019/058013 WO2020086933A1 (en) | 2018-10-26 | 2019-10-25 | Ta-cu alloy material for extreme ultraviolet mask absorber |
Publications (2)
Publication Number | Publication Date |
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JP2022505694A true JP2022505694A (ja) | 2022-01-14 |
JP7199531B2 JP7199531B2 (ja) | 2023-01-05 |
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JP2021522339A Active JP7199531B2 (ja) | 2018-10-26 | 2019-10-25 | 極紫外線マスク吸収体用のta‐cu合金 |
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- 2019-10-25 JP JP2021522339A patent/JP7199531B2/ja active Active
- 2019-10-25 SG SG11202103169RA patent/SG11202103169RA/en unknown
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US20200133111A1 (en) | 2020-04-30 |
WO2020086933A1 (en) | 2020-04-30 |
TW202026770A (zh) | 2020-07-16 |
JP7199531B2 (ja) | 2023-01-05 |
KR20210066015A (ko) | 2021-06-04 |
SG11202103169RA (en) | 2021-05-28 |
US11209727B2 (en) | 2021-12-28 |
KR102647715B1 (ko) | 2024-03-13 |
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