JP7454742B2 - 極端紫外線マスク吸収体材料 - Google Patents
極端紫外線マスク吸収体材料 Download PDFInfo
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- JP7454742B2 JP7454742B2 JP2023501388A JP2023501388A JP7454742B2 JP 7454742 B2 JP7454742 B2 JP 7454742B2 JP 2023501388 A JP2023501388 A JP 2023501388A JP 2023501388 A JP2023501388 A JP 2023501388A JP 7454742 B2 JP7454742 B2 JP 7454742B2
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- 239000006096 absorbing agent Substances 0.000 title claims description 132
- 239000000463 material Substances 0.000 title description 66
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 93
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 90
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 68
- 229910052707 ruthenium Inorganic materials 0.000 claims description 59
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 55
- 229910000929 Ru alloy Inorganic materials 0.000 claims description 54
- 229910052787 antimony Inorganic materials 0.000 claims description 53
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 52
- 229910045601 alloy Inorganic materials 0.000 claims description 47
- 239000000956 alloy Substances 0.000 claims description 47
- 229910052786 argon Inorganic materials 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 43
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 34
- 239000001301 oxygen Substances 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 279
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 53
- 229910052741 iridium Inorganic materials 0.000 description 41
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 37
- 229910052715 tantalum Inorganic materials 0.000 description 36
- 239000002140 antimony alloy Substances 0.000 description 31
- -1 oxide Substances 0.000 description 31
- 150000004767 nitrides Chemical class 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 22
- 238000000151 deposition Methods 0.000 description 21
- 229910000575 Ir alloy Inorganic materials 0.000 description 20
- 229910001362 Ta alloys Inorganic materials 0.000 description 20
- 230000008021 deposition Effects 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 17
- 238000005240 physical vapour deposition Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 12
- 229910000457 iridium oxide Inorganic materials 0.000 description 11
- YJZATOSJMRIRIW-UHFFFAOYSA-N [Ir]=O Chemical class [Ir]=O YJZATOSJMRIRIW-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 description 10
- 230000002745 absorbent Effects 0.000 description 9
- 239000002250 absorbent Substances 0.000 description 9
- 229910000410 antimony oxide Inorganic materials 0.000 description 9
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical class [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- RZJQYRCNDBMIAG-UHFFFAOYSA-N [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] Chemical class [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] RZJQYRCNDBMIAG-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005289 physical deposition Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000000541 cathodic arc deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- WOUPYJKFGJZQMH-UHFFFAOYSA-N [Nb].[Ru] Chemical compound [Nb].[Ru] WOUPYJKFGJZQMH-UHFFFAOYSA-N 0.000 description 1
- ROZSPJBPUVWBHW-UHFFFAOYSA-N [Ru]=O Chemical class [Ru]=O ROZSPJBPUVWBHW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000995 aerosol-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- IBKBIJITWRZZBB-UHFFFAOYSA-N azanylidynestibane Chemical compound [Sb]#N IBKBIJITWRZZBB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- AJTVWPGZWVJMEA-UHFFFAOYSA-N ruthenium tungsten Chemical compound [Ru].[Ru].[W].[W].[W] AJTVWPGZWVJMEA-UHFFFAOYSA-N 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Description
Claims (19)
- 極端紫外線(EUV)マスクブランクを製作する方法であって、
基板上に、EUV放射を反射する多層積層体を形成することであって、前記多層積層体が、複数の反射層ペアを備える、多層積層体を形成することと、
前記多層積層体上に吸収体層を形成することであって、前記吸収体層が、ルテニウムとアンチモンの合金を備える、吸収体層を形成することと
を含む、方法。 - ルテニウムとアンチモンの前記合金が、約4重量%から約96重量%までのルテニウムと、約4重量%から約96重量%までのアンチモンとを含む、請求項1に記載の方法。
- ルテニウムとアンチモンの前記合金が、アモルファスである、請求項1に記載の方法。
- 前記吸収体層を形成するために、前記合金が、アルゴン(Ar)、酸素(O2)、または窒素(N2)のうちの1つまたは複数から選択されたガスを用いて共スパッタリングされたルテニウムとアンチモンによって形成される、請求項1に記載の方法。
- 前記吸収体層を形成するために、前記合金が、アルゴン(Ar)、酸素(O2)、または窒素(N2)のうちの1つまたは複数から選択されたガスを使用してルテニウムとアンチモンの層を備える交互層の積層として層ごとに堆積される、請求項1に記載の方法。
- 前記吸収体層を形成するために、前記合金が、前記合金と同じ組成を有するバルクターゲットを使用して堆積され、アルゴン(Ar)、酸素(O2)、または窒素(N2)のうちの1つまたは複数から選択されたガスを使用してスパッタリングされる、請求項1に記載の方法。
- 前記合金が、約0.1重量%から約5重量%までの範囲内の窒素または酸素のうちの1つまたは複数でドープされる、請求項1に記載の方法。
- 極端紫外線(EUV)マスクブランクであって、
基板と、
EUV放射を反射する多層積層体であって、前記多層積層体が、複数の反射層ペアを備える、多層積層体と、
ルテニウムとアンチモンの合金を備える、前記多層積層体上の吸収体層と
を備える、極端紫外線(EUV)マスクブランク。 - ルテニウムとアンチモンの前記合金が、約4重量%から約96重量%までのルテニウムと、約4重量%から約96重量%までのアンチモンとを含む、請求項8に記載の極端紫外線(EUV)マスクブランク。
- ルテニウムとアンチモンの前記合金が、アモルファスである、請求項8に記載の極端紫外線(EUV)マスクブランク。
- 前記吸収体層が、60nm未満の厚さを有する、請求項8に記載の極端紫外線(EUV)マスクブランク。
- 前記吸収体層が、窒素または酸素のうちの1つまたは複数から選択された、約0.1重量%から約5重量%までの範囲のドーパントをさらに含む、請求項8に記載の極端紫外線(EUV)マスクブランク。
- 前記吸収体層が、キャッピング層に対してエッチング選択的である、請求項8に記載の極端紫外線(EUV)マスクブランク。
- 極端紫外線(EUV)マスクブランクであって、
基板と、
EUV放射を反射する多層積層体であって、前記多層積層体が、モリブデン(Mo)およびシリコン(Si)を含む複数の反射層ペアを備える、多層積層体と、
ルテニウムとアンチモンの合金を備える、前記多層積層体上の吸収体層と
を備える、極端紫外線(EUV)マスクブランク。 - ルテニウムとアンチモンの前記合金が、約4重量%から約96重量%までのルテニウムと、約4重量%から約96重量%までのアンチモンとを含む、請求項14に記載の極端紫外線(EUV)マスクブランク。
- ルテニウムとアンチモンの前記合金が、アモルファスである、請求項14に記載の極端紫外線(EUV)マスクブランク。
- 前記吸収体層が、60nm未満の厚さを有する、請求項14に記載の極端紫外線(EUV)マスクブランク。
- 前記吸収体層が、窒素または酸素のうちの1つまたは複数から選択された、約0.1重量%から約5重量%までの範囲のドーパントをさらに含む、請求項14に記載の極端紫外線(EUV)マスクブランク。
- 前記吸収体層が、キャッピング層に対してエッチング選択的である、請求項14に記載の極端紫外線(EUV)マスクブランク。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063051111P | 2020-07-13 | 2020-07-13 | |
US63/051,111 | 2020-07-13 | ||
US17/370,406 US11675263B2 (en) | 2020-07-13 | 2021-07-08 | Extreme ultraviolet mask absorber materials |
US17/370,406 | 2021-07-08 | ||
PCT/US2021/041206 WO2022015612A1 (en) | 2020-07-13 | 2021-07-12 | Extreme ultraviolet mask absorber materials |
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JP2023535300A JP2023535300A (ja) | 2023-08-17 |
JP7454742B2 true JP7454742B2 (ja) | 2024-03-22 |
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US (1) | US11675263B2 (ja) |
JP (1) | JP7454742B2 (ja) |
KR (1) | KR20230038249A (ja) |
TW (1) | TW202202641A (ja) |
WO (1) | WO2022015612A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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- 2021-07-07 TW TW110124885A patent/TW202202641A/zh unknown
- 2021-07-08 US US17/370,406 patent/US11675263B2/en active Active
- 2021-07-12 JP JP2023501388A patent/JP7454742B2/ja active Active
- 2021-07-12 WO PCT/US2021/041206 patent/WO2022015612A1/en active Application Filing
- 2021-07-12 KR KR1020237004782A patent/KR20230038249A/ko unknown
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US20220011663A1 (en) | 2022-01-13 |
JP2023535300A (ja) | 2023-08-17 |
US11675263B2 (en) | 2023-06-13 |
WO2022015612A1 (en) | 2022-01-20 |
KR20230038249A (ko) | 2023-03-17 |
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