JP2022111734A - ウエハ載置台及びその製造方法 - Google Patents
ウエハ載置台及びその製造方法 Download PDFInfo
- Publication number
- JP2022111734A JP2022111734A JP2021007360A JP2021007360A JP2022111734A JP 2022111734 A JP2022111734 A JP 2022111734A JP 2021007360 A JP2021007360 A JP 2021007360A JP 2021007360 A JP2021007360 A JP 2021007360A JP 2022111734 A JP2022111734 A JP 2022111734A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- base
- connection member
- ceramic
- connecting member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 170
- 239000000758 substrate Substances 0.000 claims abstract description 115
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims description 13
- 238000000227 grinding Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 description 31
- 238000005219 brazing Methods 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 238000000465 moulding Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910017398 Au—Ni Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B13/00—Layered products comprising a a layer of water-setting substance, e.g. concrete, plaster, asbestos cement, or like builders' material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/02—Layer formed of wires, e.g. mesh
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/266—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/44—Number of layers variable across the laminate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/02—Composition of the impregnated, bonded or embedded layer
- B32B2260/021—Fibrous or filamentary layer
- B32B2260/023—Two or more layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Structural Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Chemical & Material Sciences (AREA)
Abstract
Description
上面にウエハ載置面を有する第1セラミック基体と、
前記第1セラミック基体の下面側に配置された第2セラミック基体と、
前記第1セラミック基体の下面と前記第2セラミック基体の上面とを接合する金属接合層と、
上底と下底とを備え、前記上底が前記金属接合層と接触する状態で前記第2セラミック基体に埋設された接続部材と、
前記接続部材の前記下底に電気的に接続された給電端子と、
を備え、
前記接続部材は、前記接続部材を前記上底と平行な面で切断したときの断面積が前記上底側から前記下底側に向かって大きくなる部分を有している、
ものである。
(a)上面にウエハ載置面を有する第1セラミック基体と、上底と下底とを備えた接続部材を埋設した第2セラミック基体とを用意する工程と、
(b)前記接続部材の前記上底が露出するように前記第2セラミック基体を研削し、接合面を形成する工程と、
(c)前記第1セラミック基体の下面と前記第2セラミック基体の前記接合面とを金属接合する工程と、
を含み、
前記工程(a)で用意する前記第2セラミック基体に埋設された前記接続部材は、前記接続部材を前記上底と平行な面で切断したときの断面積が前記上底側から前記下底側に向かって大きくなる部分を有している、
ものである。
Claims (6)
- 上面にウエハ載置面を有する第1セラミック基体と、
前記第1セラミック基体の下面側に配置された第2セラミック基体と、
前記第1セラミック基体の下面と前記第2セラミック基体の上面とを接合する金属接合層と、
上底と下底とを備え、前記上底が前記金属接合層と接触する状態で前記第2セラミック基体に埋設された接続部材と、
前記接続部材の前記下底に電気的に接続された給電端子と、
を備え、
前記接続部材は、前記接続部材を前記上底と平行な面で切断したときの断面積が前記上底側から前記下底側に向かって大きくなる部分を有している、
ウエハ載置台。 - 前記第2セラミック基体は、前記第2セラミック基体の下面に前記給電端子を挿入するための穴を備え、
前記給電端子の側面は、前記穴の側面に接合されている、
請求項1に記載のウエハ載置台。 - 前記接続部材は、金属メッシュが多段に積み重ねられた部材である、
請求項1又は2に記載のウエハ載置台。 - 前記接続部材の形状は、前記接続部材を前記上底に平行な面で切断したときの断面積が前記上底から前記下底に向かって大きくなる形状である、
請求項1~3のいずれか1項に記載のウエハ載置台。 - 前記接続部材の形状は、円錐台形状、半球台形状又は前記円錐台形状と比べて側面が内側に入り込んだ形状である、
請求項4に記載のウエハ載置台。 - (a)上面にウエハ載置面を有する第1セラミック基体と、上底と下底とを備えた接続部材を埋設した第2セラミック基体とを用意する工程と、
(b)前記接続部材の前記上底が露出するように前記第2セラミック基体を研削し、接合面を形成する工程と、
(c)前記第1セラミック基体の下面と前記第2セラミック基体の前記接合面とを金属接合する工程と、
を含み、
前記工程(a)で用意する前記第2セラミック基体に埋設された前記接続部材は、前記接続部材を前記上底と平行な面で切断したときの断面積が前記上底側から前記下底側に向かって大きくなる部分を有している、
ウエハ載置台の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021007360A JP7414747B2 (ja) | 2021-01-20 | 2021-01-20 | ウエハ載置台及びその製造方法 |
US17/453,352 US20220230905A1 (en) | 2021-01-20 | 2021-11-03 | Wafer placement table and method of manufacturing the same |
TW110141281A TWI786933B (zh) | 2021-01-20 | 2021-11-05 | 晶圓載置台及其製造方法 |
KR1020210154786A KR102645401B1 (ko) | 2021-01-20 | 2021-11-11 | 웨이퍼 적재대 및 그 제조 방법 |
CN202210051452.7A CN114823463A (zh) | 2021-01-20 | 2022-01-17 | 晶片载置台及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021007360A JP7414747B2 (ja) | 2021-01-20 | 2021-01-20 | ウエハ載置台及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022111734A true JP2022111734A (ja) | 2022-08-01 |
JP7414747B2 JP7414747B2 (ja) | 2024-01-16 |
Family
ID=82406549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021007360A Active JP7414747B2 (ja) | 2021-01-20 | 2021-01-20 | ウエハ載置台及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220230905A1 (ja) |
JP (1) | JP7414747B2 (ja) |
KR (1) | KR102645401B1 (ja) |
CN (1) | CN114823463A (ja) |
TW (1) | TWI786933B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7441370B1 (ja) | 2022-10-31 | 2024-02-29 | ミコ セラミックス リミテッド | セラミックサセプター |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11229968B2 (en) * | 2011-11-30 | 2022-01-25 | Watlow Electric Manufacturing Company | Semiconductor substrate support with multiple electrodes and method for making same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03217043A (ja) * | 1990-01-22 | 1991-09-24 | Ngk Spark Plug Co Ltd | 静電チャック装置 |
JP2003152064A (ja) * | 2001-11-13 | 2003-05-23 | Sumitomo Osaka Cement Co Ltd | 電極内蔵型サセプタ及びその製造方法 |
JP2007005740A (ja) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | 静電チャック電位供給部の構造とその製造及び再生方法 |
JP2015159232A (ja) * | 2014-02-25 | 2015-09-03 | 京セラ株式会社 | 試料保持具およびこれを用いたプラズマエッチング装置 |
WO2016052115A1 (ja) * | 2014-09-30 | 2016-04-07 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2017022284A (ja) * | 2015-07-13 | 2017-01-26 | 住友電気工業株式会社 | ウェハ保持体 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006114250A (ja) | 2004-10-12 | 2006-04-27 | Toshiba Ceramics Co Ltd | 金属部材埋設セラミックス基材の給電端子取付け構造 |
JP2007258610A (ja) | 2006-03-24 | 2007-10-04 | Ngk Insulators Ltd | アルミナ焼成体 |
JP2008135737A (ja) | 2006-11-01 | 2008-06-12 | Ngk Insulators Ltd | 静電チャック及び静電チャックの製造方法 |
TWI450353B (zh) * | 2008-01-08 | 2014-08-21 | Ngk Insulators Ltd | A bonding structure and a semiconductor manufacturing apparatus |
KR101109408B1 (ko) * | 2009-07-28 | 2012-02-29 | (주)위지트 | 전극봉, 정전척 및 기판처리장치 |
JP5348439B2 (ja) * | 2011-09-30 | 2013-11-20 | Toto株式会社 | 静電チャック |
US9412579B2 (en) * | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
US9685356B2 (en) * | 2012-12-11 | 2017-06-20 | Applied Materials, Inc. | Substrate support assembly having metal bonded protective layer |
JP6292977B2 (ja) * | 2014-05-22 | 2018-03-14 | 新光電気工業株式会社 | 静電チャック及び半導体・液晶製造装置 |
JP6441921B2 (ja) * | 2014-06-27 | 2018-12-19 | 日本碍子株式会社 | 接合構造体 |
JP6786439B2 (ja) * | 2016-06-28 | 2020-11-18 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
JP6693832B2 (ja) * | 2016-07-29 | 2020-05-13 | 日本特殊陶業株式会社 | セラミックス部材 |
WO2019082821A1 (ja) * | 2017-10-24 | 2019-05-02 | 日本碍子株式会社 | ウエハ載置台及びその製法 |
US11715652B2 (en) * | 2018-09-28 | 2023-08-01 | Ngk Insulators, Ltd. | Member for semiconductor manufacturing apparatus |
TWI811307B (zh) * | 2019-03-12 | 2023-08-11 | 鴻創應用科技有限公司 | 陶瓷電路複合結構及其製造方法 |
KR20220123714A (ko) * | 2020-09-02 | 2022-09-08 | 니뽄 도쿠슈 도교 가부시키가이샤 | 접합체, 유지 장치, 및 정전 척 |
-
2021
- 2021-01-20 JP JP2021007360A patent/JP7414747B2/ja active Active
- 2021-11-03 US US17/453,352 patent/US20220230905A1/en active Pending
- 2021-11-05 TW TW110141281A patent/TWI786933B/zh active
- 2021-11-11 KR KR1020210154786A patent/KR102645401B1/ko active IP Right Grant
-
2022
- 2022-01-17 CN CN202210051452.7A patent/CN114823463A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03217043A (ja) * | 1990-01-22 | 1991-09-24 | Ngk Spark Plug Co Ltd | 静電チャック装置 |
JP2003152064A (ja) * | 2001-11-13 | 2003-05-23 | Sumitomo Osaka Cement Co Ltd | 電極内蔵型サセプタ及びその製造方法 |
JP2007005740A (ja) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | 静電チャック電位供給部の構造とその製造及び再生方法 |
JP2015159232A (ja) * | 2014-02-25 | 2015-09-03 | 京セラ株式会社 | 試料保持具およびこれを用いたプラズマエッチング装置 |
WO2016052115A1 (ja) * | 2014-09-30 | 2016-04-07 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2017022284A (ja) * | 2015-07-13 | 2017-01-26 | 住友電気工業株式会社 | ウェハ保持体 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7441370B1 (ja) | 2022-10-31 | 2024-02-29 | ミコ セラミックス リミテッド | セラミックサセプター |
Also Published As
Publication number | Publication date |
---|---|
CN114823463A (zh) | 2022-07-29 |
US20220230905A1 (en) | 2022-07-21 |
TWI786933B (zh) | 2022-12-11 |
JP7414747B2 (ja) | 2024-01-16 |
TW202243095A (zh) | 2022-11-01 |
KR102645401B1 (ko) | 2024-03-11 |
KR20220105582A (ko) | 2022-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7414747B2 (ja) | ウエハ載置台及びその製造方法 | |
TW201325330A (zh) | 配線基板及其製造方法以及半導體裝置 | |
JP2003282819A (ja) | 半導体装置の製造方法 | |
JP7414751B2 (ja) | 半導体製造装置用部材及びその製法 | |
JP4382154B2 (ja) | ヒートスプレッダおよびその製造方法 | |
JP2001358266A (ja) | 半導体搭載用放熱基板材料、その製造方法、及びそれを用いたセラミックパッケージ | |
KR20170048999A (ko) | 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판 | |
TW201934766A (zh) | 包覆材及其製造方法 | |
TWI566344B (zh) | 散熱板、功率模組及散熱板的製造方法 | |
JP2002110736A (ja) | 半導体装置及びその製造方法 | |
JP4999983B2 (ja) | ヒートスプレッダおよびその製造方法 | |
KR101856109B1 (ko) | 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판 | |
KR101856106B1 (ko) | 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판 | |
JP2004022964A (ja) | Al−SiC系複合体およびそれを用いた放熱部品、半導体モジュール装置 | |
JP2002164461A (ja) | セラミック回路基板 | |
JP6672244B2 (ja) | セラミックス接合体の製造方法 | |
KR101856107B1 (ko) | 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판 | |
JP2002299532A (ja) | Al−SiC系複合体および放熱部品 | |
JP2023056710A (ja) | ウエハ載置台 | |
JP5195715B2 (ja) | 半導体装置の部品実装方法、及び半導体装置の実装部品 | |
JP2013041895A (ja) | 接続シート | |
JPH05211248A (ja) | 半導体搭載用複合放熱基板及びその製造方法 | |
JP2005166821A (ja) | ウェーハ保持用静電チャック及びその製造方法 | |
JP2008277757A (ja) | 半導体チップと基板との間の半田接続部およびその製造 | |
JP4088515B2 (ja) | 静電チャック |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221018 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230829 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230831 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230920 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231219 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231228 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7414747 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |