JP2022031313A5 - - Google Patents

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JP2022031313A5
JP2022031313A5 JP2021196975A JP2021196975A JP2022031313A5 JP 2022031313 A5 JP2022031313 A5 JP 2022031313A5 JP 2021196975 A JP2021196975 A JP 2021196975A JP 2021196975 A JP2021196975 A JP 2021196975A JP 2022031313 A5 JP2022031313 A5 JP 2022031313A5
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Japan
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plasma
disilacyclobutane
nitrogen
carbon
doped silicon
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JP2021196975A
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English (en)
Japanese (ja)
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JP2022031313A (ja
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Priority claimed from JP2019161923A external-priority patent/JP7048548B2/ja
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Publication of JP2022031313A publication Critical patent/JP2022031313A/ja
Publication of JP2022031313A5 publication Critical patent/JP2022031313A5/ja
Priority to JP2023164716A priority Critical patent/JP2023182658A/ja
Pending legal-status Critical Current

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JP2021196975A 2015-02-06 2021-12-03 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 Pending JP2022031313A (ja)

Priority Applications (1)

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JP2023164716A JP2023182658A (ja) 2015-02-06 2023-09-27 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562113024P 2015-02-06 2015-02-06
US62/113,024 2015-02-06
US201562142546P 2015-04-03 2015-04-03
US62/142,546 2015-04-03
JP2019161923A JP7048548B2 (ja) 2015-02-06 2019-09-05 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法

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JP2019161923A Division JP7048548B2 (ja) 2015-02-06 2019-09-05 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法

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Publications (2)

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JP2022031313A JP2022031313A (ja) 2022-02-18
JP2022031313A5 true JP2022031313A5 (https=) 2022-05-31

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JP2017541257A Active JP6585724B2 (ja) 2015-02-06 2016-02-04 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法
JP2019161923A Active JP7048548B2 (ja) 2015-02-06 2019-09-05 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法
JP2021196975A Pending JP2022031313A (ja) 2015-02-06 2021-12-03 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法
JP2023164716A Pending JP2023182658A (ja) 2015-02-06 2023-09-27 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法

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JP2017541257A Active JP6585724B2 (ja) 2015-02-06 2016-02-04 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法
JP2019161923A Active JP7048548B2 (ja) 2015-02-06 2019-09-05 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法

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JP2023164716A Pending JP2023182658A (ja) 2015-02-06 2023-09-27 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法

Country Status (9)

Country Link
US (1) US10145008B2 (https=)
EP (2) EP3254303B1 (https=)
JP (4) JP6585724B2 (https=)
KR (4) KR102058595B1 (https=)
CN (1) CN107406978B (https=)
IL (1) IL253746B (https=)
SG (2) SG11201706257YA (https=)
TW (1) TWI585230B (https=)
WO (1) WO2016126911A2 (https=)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11549181B2 (en) * 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
KR102058595B1 (ko) * 2015-02-06 2019-12-23 버슘머트리얼즈 유에스, 엘엘씨 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법
TWI716333B (zh) * 2015-03-30 2021-01-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合
US20180033614A1 (en) * 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
WO2019058477A1 (ja) * 2017-09-21 2019-03-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
US10483372B2 (en) 2017-09-29 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Spacer structure with high plasma resistance for semiconductor devices
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 高圧処理システムのためのコンデンサシステム
US10510852B2 (en) * 2017-11-28 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k feature formation processes and structures formed thereby
JP6806719B2 (ja) * 2018-01-17 2021-01-06 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
KR102649241B1 (ko) 2018-01-24 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 고압 어닐링을 사용한 심 힐링
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10714331B2 (en) * 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
US20200071819A1 (en) * 2018-08-29 2020-03-05 Versum Materials Us, Llc Methods For Making Silicon Containing Films That Have High Carbon Content
US10985010B2 (en) * 2018-08-29 2021-04-20 Versum Materials Us, Llc Methods for making silicon and nitrogen containing films
JP6980624B2 (ja) * 2018-09-13 2021-12-15 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
CN112753090A (zh) * 2018-09-21 2021-05-04 朗姆研究公司 低介电常数原子层沉积间隙填充方法和材料
TWI728478B (zh) * 2018-09-24 2021-05-21 美商慧盛材料美國責任有限公司 含矽及氮膜的製造方法
EP3844318B1 (en) * 2018-10-03 2025-12-10 Versum Materials US, LLC Methods for making silicon and nitrogen containing films
JP7256263B2 (ja) * 2018-10-05 2023-04-11 バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー ケイ素含有膜の高温原子層堆積
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
CN113166937A (zh) * 2018-11-27 2021-07-23 弗萨姆材料美国有限责任公司 1-甲基-1-异丙氧基-硅杂环烷烃和由其制备的致密有机硅膜
JP6957442B2 (ja) 2018-11-30 2021-11-02 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
TWI764068B (zh) 2019-01-11 2022-05-11 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式
US11756786B2 (en) 2019-01-18 2023-09-12 International Business Machines Corporation Forming high carbon content flowable dielectric film with low processing damage
EP3902939A4 (en) * 2019-02-05 2022-09-28 Versum Materials US, LLC CARBON DOPED SILICON OXIDE DEPOSIT
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
US12264258B2 (en) 2019-07-25 2025-04-01 Versum Materials Us, Llc Compositions comprising silacycloalkanes and methods using same for deposition of silicon-containing film
US11186909B2 (en) * 2019-08-26 2021-11-30 Applied Materials, Inc. Methods of depositing low-K films
KR102844501B1 (ko) * 2020-01-31 2025-08-11 주식회사 유피케미칼 실리콘 전구체 화합물, 이를 포함하는 실리콘-함유 막 형성용 조성물 및 실리콘-함유 막 형성 방법
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN111681943B (zh) * 2020-04-27 2025-10-31 全球能源互联网研究院有限公司 一种碳化硅表面的处理方法
CN115867689A (zh) * 2020-06-23 2023-03-28 恩特格里斯公司 硅前体化合物及形成含硅膜的方法
CN115803474A (zh) 2020-07-23 2023-03-14 朗姆研究公司 具有受控膜性质和高沉积速率的保形热cvd
WO2022103764A1 (en) 2020-11-13 2022-05-19 Lam Research Corporation Process tool for dry removal of photoresist
JP2023550351A (ja) * 2020-11-16 2023-12-01 バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー ケイ素及び酸素を含有する誘電体膜の誘電体への選択的堆積
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
US20220342302A1 (en) * 2021-03-24 2022-10-27 Applied Materials, Inc. Dual tone photoresists
US20220308453A1 (en) * 2021-03-24 2022-09-29 Applied Materials, Inc. Oxidation treatment for positive tone photoresist films
US12550643B2 (en) * 2021-06-22 2026-02-10 Applied Materials, Inc. Oxidants and strained-ring precursors
TW202400826A (zh) * 2021-12-20 2024-01-01 美商蘭姆研究公司 使用胺基矽烷及氯矽烷前驅物的保形矽氧化物沉積
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
KR20250034989A (ko) * 2022-07-11 2025-03-11 어플라이드 머티어리얼스, 인코포레이티드 이중 톤 포토레지스트들
JP2024077324A (ja) * 2022-11-28 2024-06-07 東京エレクトロン株式会社 成膜方法及び成膜装置
WO2024196643A1 (en) 2023-03-17 2024-09-26 Lam Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
CN121311621A (zh) * 2023-06-13 2026-01-09 朗姆研究公司 用于低介电膜沉积的前体
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상
JP2025167351A (ja) * 2024-04-25 2025-11-07 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW302063U (en) * 1992-09-24 1997-04-01 Honda Motor Co Ltd Pipe joint
US5415126A (en) * 1993-08-16 1995-05-16 Dow Corning Corporation Method of forming crystalline silicon carbide coatings at low temperatures
US20080268177A1 (en) * 2002-05-17 2008-10-30 Air Products And Chemicals, Inc. Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants
JP5218765B2 (ja) * 2006-03-29 2013-06-26 Jsr株式会社 ポリマーの製造方法、ポリマー、ポリマー膜形成用組成物、ポリマー膜の形成方法およびポリマー膜
US7998536B2 (en) * 2007-07-12 2011-08-16 Applied Materials, Inc. Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition
KR100923775B1 (ko) * 2007-11-30 2009-10-27 한국과학기술연구원 폴리염화카보실란의 제조방법
CN101978008A (zh) * 2008-04-02 2011-02-16 Jsr株式会社 含有含硅聚合物的组合物及其固化物
US8241624B2 (en) 2008-04-18 2012-08-14 Ecolab Usa Inc. Method of disinfecting packages with composition containing peracid and catalase
US8298628B2 (en) * 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
WO2010047869A1 (en) * 2008-10-20 2010-04-29 Dow Corning Corporation Cvd precursors
US8703624B2 (en) * 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
US8703625B2 (en) 2010-02-04 2014-04-22 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
KR101366002B1 (ko) * 2010-04-09 2014-02-21 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
KR20130135261A (ko) * 2010-11-03 2013-12-10 어플라이드 머티어리얼스, 인코포레이티드 실리콘 카바이드 및 실리콘 카보나이트라이드 막들을 증착하기 위한 장치 및 방법들
WO2013039881A2 (en) 2011-09-13 2013-03-21 Applied Materials, Inc. Carbosilane precursors for low temperature film deposition
US8993072B2 (en) * 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
JP6043546B2 (ja) * 2011-10-21 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US20130224964A1 (en) 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US8871656B2 (en) 2012-03-05 2014-10-28 Applied Materials, Inc. Flowable films using alternative silicon precursors
US20130288485A1 (en) * 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US9337018B2 (en) * 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US9243324B2 (en) 2012-07-30 2016-01-26 Air Products And Chemicals, Inc. Methods of forming non-oxygen containing silicon-based films
KR20150121217A (ko) 2013-03-01 2015-10-28 어플라이드 머티어리얼스, 인코포레이티드 SiCN 또는 SiCON을 포함하는 필름의 저온 원자층 증착
US20140302690A1 (en) 2013-04-04 2014-10-09 Applied Materials, Inc. Chemical linkers to impart improved mechanical strength to flowable films
US9343293B2 (en) 2013-04-04 2016-05-17 Applied Materials, Inc. Flowable silicon—carbon—oxygen layers for semiconductor processing
KR102058595B1 (ko) * 2015-02-06 2019-12-23 버슘머트리얼즈 유에스, 엘엘씨 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법

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