JP2018506185A5 - - Google Patents
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- JP2018506185A5 JP2018506185A5 JP2017541257A JP2017541257A JP2018506185A5 JP 2018506185 A5 JP2018506185 A5 JP 2018506185A5 JP 2017541257 A JP2017541257 A JP 2017541257A JP 2017541257 A JP2017541257 A JP 2017541257A JP 2018506185 A5 JP2018506185 A5 JP 2018506185A5
- Authority
- JP
- Japan
- Prior art keywords
- disilacyclobutane
- cyclic
- plasma
- group
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 125000004122 cyclic group Chemical group 0.000 claims 23
- 238000000034 method Methods 0.000 claims 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 14
- 229910052710 silicon Inorganic materials 0.000 claims 14
- 239000010703 silicon Substances 0.000 claims 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 9
- 239000001301 oxygen Substances 0.000 claims 9
- 229910052760 oxygen Inorganic materials 0.000 claims 9
- 239000002243 precursor Substances 0.000 claims 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- 229910052786 argon Inorganic materials 0.000 claims 5
- 239000001307 helium Substances 0.000 claims 5
- 229910052734 helium Inorganic materials 0.000 claims 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 5
- 229910052757 nitrogen Inorganic materials 0.000 claims 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 5
- LISDBLOKKWTHNH-UHFFFAOYSA-N 1,3,5-Trisilacyclohexan Natural products C1[SiH2]C[SiH2]C[SiH2]1 LISDBLOKKWTHNH-UHFFFAOYSA-N 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- GHFCSGZETOKRDX-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3,5-trisilinane Chemical compound Cl[Si]1(C[Si](C[SiH2]C1)(Cl)Cl)Cl GHFCSGZETOKRDX-UHFFFAOYSA-N 0.000 claims 3
- SYSHGEHAYJKOLC-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3-disiletane Chemical compound Cl[Si]1(Cl)C[Si](Cl)(Cl)C1 SYSHGEHAYJKOLC-UHFFFAOYSA-N 0.000 claims 3
- YXEUXUWNULSFFD-UHFFFAOYSA-N 1,3-dibromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH](Br)C1 YXEUXUWNULSFFD-UHFFFAOYSA-N 0.000 claims 3
- JLQZGADRJJMDNW-UHFFFAOYSA-N 1,3-dichloro-1,3-dimethyl-1,3-disiletane Chemical compound C[Si]1(Cl)C[Si](C)(Cl)C1 JLQZGADRJJMDNW-UHFFFAOYSA-N 0.000 claims 3
- NRRDFTJNERNSST-UHFFFAOYSA-N 1,3-dichloro-1-n,1-n,3-n,3-n-tetramethyl-1,3-disiletane-1,3-diamine Chemical compound CN(C)[Si]1(Cl)C[Si](Cl)(N(C)C)C1 NRRDFTJNERNSST-UHFFFAOYSA-N 0.000 claims 3
- GPWWAMQYZRLMDJ-UHFFFAOYSA-N 1-bromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH2]C1 GPWWAMQYZRLMDJ-UHFFFAOYSA-N 0.000 claims 3
- KFEPWALDYLJNIO-UHFFFAOYSA-N 1-chloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH2]C1 KFEPWALDYLJNIO-UHFFFAOYSA-N 0.000 claims 3
- ZSJFGVOPAMPCNL-UHFFFAOYSA-N Br[Si]1(C[SiH2]C1)Br Chemical compound Br[Si]1(C[SiH2]C1)Br ZSJFGVOPAMPCNL-UHFFFAOYSA-N 0.000 claims 3
- ADGZRIQEIVWAEW-UHFFFAOYSA-N CN(C)[Si]1(Cl)C[Si](Cl)(Cl)C1 Chemical compound CN(C)[Si]1(Cl)C[Si](Cl)(Cl)C1 ADGZRIQEIVWAEW-UHFFFAOYSA-N 0.000 claims 3
- YYAKHGXAIYORKU-UHFFFAOYSA-N Cl[Si]1(C[SiH2]C1)Cl Chemical compound Cl[Si]1(C[SiH2]C1)Cl YYAKHGXAIYORKU-UHFFFAOYSA-N 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- OSDVQTFYZSIHNB-UHFFFAOYSA-N I[SiH]1C[SiH2]C1 Chemical compound I[SiH]1C[SiH2]C1 OSDVQTFYZSIHNB-UHFFFAOYSA-N 0.000 claims 3
- VTCFWRLUGBYBBE-UHFFFAOYSA-N I[SiH]1C[SiH](C1)I Chemical compound I[SiH]1C[SiH](C1)I VTCFWRLUGBYBBE-UHFFFAOYSA-N 0.000 claims 3
- PUQYCPQNZPTQOZ-UHFFFAOYSA-N I[Si]1(C[SiH2]C1)I Chemical compound I[Si]1(C[SiH2]C1)I PUQYCPQNZPTQOZ-UHFFFAOYSA-N 0.000 claims 3
- UNVFLHYMVYCQNV-UHFFFAOYSA-N I[Si]1(C[Si](C1)(I)I)I Chemical compound I[Si]1(C[Si](C1)(I)I)I UNVFLHYMVYCQNV-UHFFFAOYSA-N 0.000 claims 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 3
- 229910021529 ammonia Inorganic materials 0.000 claims 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- LNFPOEVLACQNGW-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',3-N,3-N,3-N',3-N'-octamethyl-1,3-disiletane-1,1,3,3-tetramine Chemical compound CN([Si]1(C[Si](C1)(N(C)C)N(C)C)N(C)C)C LNFPOEVLACQNGW-UHFFFAOYSA-N 0.000 claims 2
- SPIJTMVEMHMCAK-UHFFFAOYSA-N CN[Si]1(C[Si](C1)(C)NC)C Chemical compound CN[Si]1(C[Si](C1)(C)NC)C SPIJTMVEMHMCAK-UHFFFAOYSA-N 0.000 claims 2
- JWPCSDOCHHRBOD-UHFFFAOYSA-N CN[Si]1(C[Si](C1)(NC)NC)NC Chemical compound CN[Si]1(C[Si](C1)(NC)NC)NC JWPCSDOCHHRBOD-UHFFFAOYSA-N 0.000 claims 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000003277 amino group Chemical group 0.000 claims 2
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 claims 2
- 238000010894 electron beam technology Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- DFQZXUVHEJJUTH-UHFFFAOYSA-N 1,1,3,3-tetrabromo-1,3-disiletane Chemical compound Br[Si]1(Br)C[Si](Br)(Br)C1 DFQZXUVHEJJUTH-UHFFFAOYSA-N 0.000 claims 1
- KLTYEMHFBXTIQP-UHFFFAOYSA-N 1,3-dichloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH](Cl)C1 KLTYEMHFBXTIQP-UHFFFAOYSA-N 0.000 claims 1
- AKDHUUDXAAUAPB-UHFFFAOYSA-N 1,3-dimethyl-1,3-disiletane Chemical compound C[SiH]1C[SiH](C)C1 AKDHUUDXAAUAPB-UHFFFAOYSA-N 0.000 claims 1
- IBOVEAKZLYGPNP-UHFFFAOYSA-N 1-n,1-n,3-n,3-n,1,3-hexamethyl-1,3-disiletane-1,3-diamine Chemical compound CN(C)[Si]1(C)C[Si](C)(N(C)C)C1 IBOVEAKZLYGPNP-UHFFFAOYSA-N 0.000 claims 1
- QNWHJNDBZHRHAS-UHFFFAOYSA-N C(C)(C)N[Si]1(C[SiH](C1)C)C Chemical compound C(C)(C)N[Si]1(C[SiH](C1)C)C QNWHJNDBZHRHAS-UHFFFAOYSA-N 0.000 claims 1
- WGRLUJXWLJSVDR-UHFFFAOYSA-N C(C)N([Si]1(C[Si](C1)(Cl)N(CC)CC)Cl)CC Chemical compound C(C)N([Si]1(C[Si](C1)(Cl)N(CC)CC)Cl)CC WGRLUJXWLJSVDR-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims 1
- URKHKSAKGFMKQJ-UHFFFAOYSA-N N,N,1,3-tetramethyl-1,3-disiletan-1-amine Chemical compound CN(C)[Si]1(C[SiH](C1)C)C URKHKSAKGFMKQJ-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 125000003342 alkenyl group Chemical group 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 125000006165 cyclic alkyl group Chemical group 0.000 claims 1
- 150000004985 diamines Chemical class 0.000 claims 1
- 150000004820 halides Chemical group 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- -1 iso -Propylamino Chemical group 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 150000001451 organic peroxides Chemical class 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562113024P | 2015-02-06 | 2015-02-06 | |
| US62/113,024 | 2015-02-06 | ||
| US201562142546P | 2015-04-03 | 2015-04-03 | |
| US62/142,546 | 2015-04-03 | ||
| PCT/US2016/016514 WO2016126911A2 (en) | 2015-02-06 | 2016-02-04 | Compositions and methods using same for carbon doped silicon containing films |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019161923A Division JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018506185A JP2018506185A (ja) | 2018-03-01 |
| JP2018506185A5 true JP2018506185A5 (https=) | 2018-04-26 |
| JP6585724B2 JP6585724B2 (ja) | 2019-10-02 |
Family
ID=55436159
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541257A Active JP6585724B2 (ja) | 2015-02-06 | 2016-02-04 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2021196975A Pending JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2023164716A Pending JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2021196975A Pending JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2023164716A Pending JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10145008B2 (https=) |
| EP (2) | EP3460827B1 (https=) |
| JP (4) | JP6585724B2 (https=) |
| KR (4) | KR20240042186A (https=) |
| CN (1) | CN107406978B (https=) |
| IL (1) | IL253746B (https=) |
| SG (2) | SG10202012631SA (https=) |
| TW (1) | TWI585230B (https=) |
| WO (1) | WO2016126911A2 (https=) |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11549181B2 (en) * | 2013-11-22 | 2023-01-10 | Applied Materials, Inc. | Methods for atomic layer deposition of SiCO(N) using halogenated silylamides |
| US10145008B2 (en) * | 2015-02-06 | 2018-12-04 | Versum Materials Us, Llc | Compositions and methods using same for carbon doped silicon containing films |
| TWI716333B (zh) * | 2015-03-30 | 2021-01-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
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| CN111095524B (zh) | 2017-09-12 | 2023-10-03 | 应用材料公司 | 用于使用保护阻挡物层制造半导体结构的设备和方法 |
| WO2019058477A1 (ja) * | 2017-09-21 | 2019-03-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
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| US10510852B2 (en) * | 2017-11-28 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-k feature formation processes and structures formed thereby |
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| US10714331B2 (en) * | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
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| US20200071819A1 (en) * | 2018-08-29 | 2020-03-05 | Versum Materials Us, Llc | Methods For Making Silicon Containing Films That Have High Carbon Content |
| US10985010B2 (en) * | 2018-08-29 | 2021-04-20 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| JP6980624B2 (ja) * | 2018-09-13 | 2021-12-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
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| US20220037144A1 (en) * | 2018-09-24 | 2022-02-03 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| SG11202103231VA (en) * | 2018-10-03 | 2021-04-29 | Versum Materials Us Llc | Methods for making silicon and nitrogen containing films |
| TWI816086B (zh) * | 2018-10-05 | 2023-09-21 | 美商慧盛材料美國責任有限公司 | 含矽膜的高溫原子層沉積 |
| JP7179172B6 (ja) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 半導体用途の構造体をエッチングするための方法 |
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| JP7274578B2 (ja) * | 2018-11-27 | 2023-05-16 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | １－メチル－１－イソ－プロポキシ－シラシクロアルカン及びそれから製造される緻密有機シリカ膜 |
| JP6957442B2 (ja) | 2018-11-30 | 2021-11-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| TWI764068B (zh) | 2019-01-11 | 2022-05-11 | 日商國際電氣股份有限公司 | 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式 |
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| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| CN111681943B (zh) * | 2020-04-27 | 2025-10-31 | 全球能源互联网研究院有限公司 | 一种碳化硅表面的处理方法 |
| KR20230028418A (ko) | 2020-06-23 | 2023-02-28 | 엔테그리스, 아이엔씨. | 규소-함유 필름을 형성시키기 위한 규소 전구체 화합물 및 방법 |
| US12598930B2 (en) | 2020-07-23 | 2026-04-07 | Lam Research Corporation | Conformal thermal CVD with controlled film properties and high deposition rate |
| US20230107357A1 (en) | 2020-11-13 | 2023-04-06 | Lam Research Corporation | Process tool for dry removal of photoresist |
| US20230416911A1 (en) * | 2020-11-16 | 2023-12-28 | Versum Materials Us, Llc | Selective deposition of silicon and oxygen containing dielectric film on dielectrics |
| JP7681106B2 (ja) | 2020-12-08 | 2025-05-21 | ラム リサーチ コーポレーション | 有機蒸気によるフォトレジストの現像 |
| US20220308453A1 (en) * | 2021-03-24 | 2022-09-29 | Applied Materials, Inc. | Oxidation treatment for positive tone photoresist films |
| US20220342302A1 (en) * | 2021-03-24 | 2022-10-27 | Applied Materials, Inc. | Dual tone photoresists |
| US12550643B2 (en) * | 2021-06-22 | 2026-02-10 | Applied Materials, Inc. | Oxidants and strained-ring precursors |
| US20240410053A1 (en) * | 2021-12-20 | 2024-12-12 | Lam Research Corporation | Conformal silicon oxide deposition using aminosilane and chlorosilane precursors |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| JP2025523684A (ja) * | 2022-07-11 | 2025-07-23 | アプライド マテリアルズ インコーポレイテッド | 両型フォトレジスト |
| JP2024077324A (ja) * | 2022-11-28 | 2024-06-07 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| KR20260025144A (ko) * | 2023-06-13 | 2026-02-23 | 램 리써치 코포레이션 | 저유전체 막 증착을 위한 전구체 |
| JP7852072B2 (ja) | 2023-07-27 | 2026-04-27 | ラム リサーチ コーポレーション | 金属含有フォトレジストのためのオールインワン乾式現像 |
| JP2025167351A (ja) * | 2024-04-25 | 2025-11-07 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100267605B1 (ko) * | 1992-09-24 | 2000-10-16 | 안자이 이치로 | 파이프 조인트 |
| US5415126A (en) * | 1993-08-16 | 1995-05-16 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings at low temperatures |
| US20080268177A1 (en) * | 2002-05-17 | 2008-10-30 | Air Products And Chemicals, Inc. | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants |
| WO2007119554A1 (ja) * | 2006-03-29 | 2007-10-25 | Jsr Corporation | ポリマーの製造方法、ポリマー、ポリマー膜形成用組成物、ポリマー膜の形成方法およびポリマー膜 |
| US7998536B2 (en) * | 2007-07-12 | 2011-08-16 | Applied Materials, Inc. | Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition |
| KR100923775B1 (ko) * | 2007-11-30 | 2009-10-27 | 한국과학기술연구원 | 폴리염화카보실란의 제조방법 |
| CN101978008A (zh) * | 2008-04-02 | 2011-02-16 | Jsr株式会社 | 含有含硅聚合物的组合物及其固化物 |
| US8241624B2 (en) | 2008-04-18 | 2012-08-14 | Ecolab Usa Inc. | Method of disinfecting packages with composition containing peracid and catalase |
| US8298628B2 (en) * | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
| US8772524B2 (en) | 2008-10-20 | 2014-07-08 | Dow Corning Corporation | CVD precursors |
| US8703624B2 (en) * | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
| US8703625B2 (en) * | 2010-02-04 | 2014-04-22 | Air Products And Chemicals, Inc. | Methods to prepare silicon-containing films |
| KR101366002B1 (ko) * | 2010-04-09 | 2014-02-21 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 |
| WO2012061593A2 (en) * | 2010-11-03 | 2012-05-10 | Applied Materials, Inc. | Apparatus and methods for deposition of silicon carbide and silicon carbonitride films |
| US8575033B2 (en) | 2011-09-13 | 2013-11-05 | Applied Materials, Inc. | Carbosilane precursors for low temperature film deposition |
| US8993072B2 (en) * | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
| JP6043546B2 (ja) * | 2011-10-21 | 2016-12-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US20130224964A1 (en) | 2012-02-28 | 2013-08-29 | Asm Ip Holding B.V. | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond |
| US8871656B2 (en) * | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
| US20130288485A1 (en) * | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
| US9337018B2 (en) * | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
| US9243324B2 (en) * | 2012-07-30 | 2016-01-26 | Air Products And Chemicals, Inc. | Methods of forming non-oxygen containing silicon-based films |
| US9643844B2 (en) | 2013-03-01 | 2017-05-09 | Applied Materials, Inc. | Low temperature atomic layer deposition of films comprising SiCN or SiCON |
| US20140302690A1 (en) | 2013-04-04 | 2014-10-09 | Applied Materials, Inc. | Chemical linkers to impart improved mechanical strength to flowable films |
| US9343293B2 (en) | 2013-04-04 | 2016-05-17 | Applied Materials, Inc. | Flowable silicon—carbon—oxygen layers for semiconductor processing |
| US10145008B2 (en) * | 2015-02-06 | 2018-12-04 | Versum Materials Us, Llc | Compositions and methods using same for carbon doped silicon containing films |
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