JP2012124492A5 - - Google Patents
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- Publication number
- JP2012124492A5 JP2012124492A5 JP2011268617A JP2011268617A JP2012124492A5 JP 2012124492 A5 JP2012124492 A5 JP 2012124492A5 JP 2011268617 A JP2011268617 A JP 2011268617A JP 2011268617 A JP2011268617 A JP 2011268617A JP 2012124492 A5 JP2012124492 A5 JP 2012124492A5
- Authority
- JP
- Japan
- Prior art keywords
- bis
- precursor
- vinylsilane
- tris
- allylsilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- -1 isopropylamino Chemical group 0.000 claims description 40
- DNAJDTIOMGISDS-UHFFFAOYSA-N prop-2-enylsilane Chemical compound [SiH3]CC=C DNAJDTIOMGISDS-UHFFFAOYSA-N 0.000 claims description 33
- 239000002243 precursor Substances 0.000 claims description 25
- 239000007983 Tris buffer Substances 0.000 claims description 15
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 claims description 13
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 claims description 12
- CKPCWHCCTJSKHK-UHFFFAOYSA-N CC(C)N[SiH](CC=C)NC(C)C Chemical group CC(C)N[SiH](CC=C)NC(C)C CKPCWHCCTJSKHK-UHFFFAOYSA-N 0.000 claims description 6
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 4
- IUWOFVSRONFKBV-UHFFFAOYSA-N 1-tert-butyl-2-[(2-tert-butylhydrazinyl)-bis(ethenyl)silyl]hydrazine Chemical compound CC(C)(C)NN[Si](C=C)(C=C)NNC(C)(C)C IUWOFVSRONFKBV-UHFFFAOYSA-N 0.000 claims description 3
- KSHDNVQWZNQVPA-UHFFFAOYSA-N 3,3-dipyrrolidin-1-ylprop-2-enylsilane Chemical compound N1(CCCC1)C(=CC[SiH3])N1CCCC1 KSHDNVQWZNQVPA-UHFFFAOYSA-N 0.000 claims description 3
- DVZVISDYWYWQCL-UHFFFAOYSA-N CC(C)(C)NN[SiH](NNC(C)(C)C)C=C Chemical compound CC(C)(C)NN[SiH](NNC(C)(C)C)C=C DVZVISDYWYWQCL-UHFFFAOYSA-N 0.000 claims description 3
- XIHUYLRLZWGSJJ-UHFFFAOYSA-N CC(C)N[SiH](NC(C)C)C=C Chemical compound CC(C)N[SiH](NC(C)C)C=C XIHUYLRLZWGSJJ-UHFFFAOYSA-N 0.000 claims description 3
- ZQIFANAXOWQNDP-UHFFFAOYSA-N CCN(C)[SiH](CC=C)N(C)CC Chemical compound CCN(C)[SiH](CC=C)N(C)CC ZQIFANAXOWQNDP-UHFFFAOYSA-N 0.000 claims description 3
- ANMCQYPNSHSXQM-UHFFFAOYSA-N N-[(tert-butylamino)-prop-2-enylsilyl]-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH](CC=C)NC(C)(C)C ANMCQYPNSHSXQM-UHFFFAOYSA-N 0.000 claims description 3
- MZCLDLQRNBVYQF-UHFFFAOYSA-N N-[diethylamino(prop-2-enyl)silyl]-N-ethylethanamine Chemical compound CCN(CC)[SiH](CC=C)N(CC)CC MZCLDLQRNBVYQF-UHFFFAOYSA-N 0.000 claims description 3
- CKSOBGJCMJUUGY-UHFFFAOYSA-N N-[dimethylamino(ethenyl)silyl]-N-methylmethanamine Chemical compound CN(C)[SiH](C=C)N(C)C CKSOBGJCMJUUGY-UHFFFAOYSA-N 0.000 claims description 3
- FIRXZHKWFHIBOF-UHFFFAOYSA-N n-(dimethylamino-ethenyl-methylsilyl)-n-methylmethanamine Chemical compound CN(C)[Si](C)(C=C)N(C)C FIRXZHKWFHIBOF-UHFFFAOYSA-N 0.000 claims description 3
- CDQWREDVZBTNEU-UHFFFAOYSA-N n-[bis(diethylamino)-ethenylsilyl]-n-ethylethanamine Chemical compound CCN(CC)[Si](C=C)(N(CC)CC)N(CC)CC CDQWREDVZBTNEU-UHFFFAOYSA-N 0.000 claims description 3
- WBVXRXLWILVPMX-UHFFFAOYSA-N n-[bis(dimethylamino)-ethenylsilyl]-n-methylmethanamine Chemical compound CN(C)[Si](C=C)(N(C)C)N(C)C WBVXRXLWILVPMX-UHFFFAOYSA-N 0.000 claims description 3
- WWDXBDRBEKUZOS-UHFFFAOYSA-N n-[bis(ethenyl)-(propan-2-ylamino)silyl]propan-2-amine Chemical compound CC(C)N[Si](C=C)(C=C)NC(C)C WWDXBDRBEKUZOS-UHFFFAOYSA-N 0.000 claims description 3
- YTMGVLAWLCOWNT-UHFFFAOYSA-N n-[bis(ethenyl)-[ethyl(methyl)amino]silyl]-n-methylethanamine Chemical compound CCN(C)[Si](C=C)(C=C)N(C)CC YTMGVLAWLCOWNT-UHFFFAOYSA-N 0.000 claims description 3
- DPNKKXIIBBSUPO-UHFFFAOYSA-N n-[bis(tert-butylamino)-ethenylsilyl]-2-methylpropan-2-amine Chemical compound CC(C)(C)N[Si](NC(C)(C)C)(NC(C)(C)C)C=C DPNKKXIIBBSUPO-UHFFFAOYSA-N 0.000 claims description 3
- DMSOEJVWAVNUGE-UHFFFAOYSA-N n-[dimethylamino-bis(ethenyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C=C)(C=C)N(C)C DMSOEJVWAVNUGE-UHFFFAOYSA-N 0.000 claims description 3
- PGNUFNGYXBXBGR-UHFFFAOYSA-N n-[ethenyl-bis(propan-2-ylamino)silyl]propan-2-amine Chemical compound CC(C)N[Si](NC(C)C)(NC(C)C)C=C PGNUFNGYXBXBGR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 11
- 229910052760 oxygen Inorganic materials 0.000 claims 11
- 239000001301 oxygen Substances 0.000 claims 11
- 125000003118 aryl group Chemical group 0.000 claims 10
- 125000004122 cyclic group Chemical group 0.000 claims 9
- 239000011261 inert gas Substances 0.000 claims 8
- 238000010926 purge Methods 0.000 claims 8
- 238000000231 atomic layer deposition Methods 0.000 claims 6
- 238000005229 chemical vapour deposition Methods 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 235000012239 silicon dioxide Nutrition 0.000 claims 5
- 239000000377 silicon dioxide Substances 0.000 claims 5
- 125000003342 alkenyl group Chemical group 0.000 claims 4
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 claims 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 3
- 239000000243 solution Substances 0.000 claims 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 3
- 229920002554 vinyl polymer Polymers 0.000 claims 3
- NWFAUSKBYPKWEL-UHFFFAOYSA-N CCN(C)[SiH](C=C)N(C)CC Chemical compound CCN(C)[SiH](C=C)N(C)CC NWFAUSKBYPKWEL-UHFFFAOYSA-N 0.000 claims 2
- ADXKTJOVHREPOG-UHFFFAOYSA-N N-ethenylsilyl-N-ethylethanamine Chemical compound CCN(CC)[SiH2]C=C ADXKTJOVHREPOG-UHFFFAOYSA-N 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- QIYXRFMWGJJGGK-UHFFFAOYSA-N bis(ethenyl)-dipyrrolidin-1-ylsilane Chemical compound C1CCCN1[Si](C=C)(C=C)N1CCCC1 QIYXRFMWGJJGGK-UHFFFAOYSA-N 0.000 claims 2
- SPAPMYLZKDMVFX-UHFFFAOYSA-N ethenyl(dipyrrolidin-1-yl)silane Chemical compound C=C[SiH](N1CCCC1)N1CCCC1 SPAPMYLZKDMVFX-UHFFFAOYSA-N 0.000 claims 2
- FYYCXYLMGPRWLV-UHFFFAOYSA-N n-[diethylamino-bis(ethenyl)silyl]-n-ethylethanamine Chemical compound CCN(CC)[Si](C=C)(C=C)N(CC)CC FYYCXYLMGPRWLV-UHFFFAOYSA-N 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 125000006374 C2-C10 alkenyl group Chemical group 0.000 claims 1
- SBKRCFRMZRDHJI-UHFFFAOYSA-N 1,3,5,7-tetrakis(ethenyl)-1,3,5,7,2,4,6,8-tetrazatetrasilocane Chemical compound C(=C)N1[SiH2]N([SiH2]N([SiH2]N([SiH2]1)C=C)C=C)C=C SBKRCFRMZRDHJI-UHFFFAOYSA-N 0.000 description 1
- PNGKAVCVRLYYEJ-UHFFFAOYSA-N 1,3,5-tris(ethenyl)-1,3,5,2,4,6-triazatrisilinane Chemical compound C(=C)N1[SiH2]N([SiH2]N([SiH2]1)C=C)C=C PNGKAVCVRLYYEJ-UHFFFAOYSA-N 0.000 description 1
- AGXAKMWXEUMUJO-UHFFFAOYSA-N 2,2-dipyrrolidin-1-ylethenylsilane Chemical compound N1(CCCC1)C(=C[SiH3])N1CCCC1 AGXAKMWXEUMUJO-UHFFFAOYSA-N 0.000 description 1
- TWALPEXSVOIFMC-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetrazatetrasilocane Chemical compound C=C[Si]1(C)N[Si](C)(C=C)N[Si](C)(C=C)N[Si](C)(C=C)N1 TWALPEXSVOIFMC-UHFFFAOYSA-N 0.000 description 1
- VABNYZYGZFRYNP-UHFFFAOYSA-N C=C[SiH](C=C)N1CCCC1 Chemical compound C=C[SiH](C=C)N1CCCC1 VABNYZYGZFRYNP-UHFFFAOYSA-N 0.000 description 1
- HWMSPZAHEQSTBJ-UHFFFAOYSA-N N-[diethylamino(ethenyl)silyl]-N-ethylethanamine Chemical compound CCN(CC)[SiH](C=C)N(CC)CC HWMSPZAHEQSTBJ-UHFFFAOYSA-N 0.000 description 1
- 241000233855 Orchidaceae Species 0.000 description 1
- JKAIQRHZPWVOQN-UHFFFAOYSA-N aminosilylethene Chemical compound N[SiH2]C=C JKAIQRHZPWVOQN-UHFFFAOYSA-N 0.000 description 1
- PMSZNCMIJVNSPB-UHFFFAOYSA-N bis(ethenyl)silicon Chemical compound C=C[Si]C=C PMSZNCMIJVNSPB-UHFFFAOYSA-N 0.000 description 1
- ZRQZPBXNRJHJTF-UHFFFAOYSA-N n-[ethenyl-bis[ethyl(methyl)amino]silyl]-n-methylethanamine Chemical compound CCN(C)[Si](C=C)(N(C)CC)N(C)CC ZRQZPBXNRJHJTF-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/964,266 | 2010-12-09 | ||
| US12/964,266 US8460753B2 (en) | 2010-12-09 | 2010-12-09 | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012124492A JP2012124492A (ja) | 2012-06-28 |
| JP2012124492A5 true JP2012124492A5 (https=) | 2013-05-30 |
| JP5357240B2 JP5357240B2 (ja) | 2013-12-04 |
Family
ID=45440145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011268617A Expired - Fee Related JP5357240B2 (ja) | 2010-12-09 | 2011-12-08 | ＣＶＤ及びＡＬＤのＳｉＯ２膜のためのアミノビニルシラン |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8460753B2 (https=) |
| EP (1) | EP2463404B1 (https=) |
| JP (1) | JP5357240B2 (https=) |
| KR (1) | KR101404576B1 (https=) |
| CN (2) | CN102534548A (https=) |
| TW (1) | TWI444499B (https=) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9188989B1 (en) | 2011-08-20 | 2015-11-17 | Daniel T. Mudd | Flow node to deliver process gas using a remote pressure measurement device |
| US9958302B2 (en) | 2011-08-20 | 2018-05-01 | Reno Technologies, Inc. | Flow control system, method, and apparatus |
| US9448564B2 (en) | 2013-02-15 | 2016-09-20 | Reno Technologies, Inc. | Gas delivery system for outputting fast square waves of process gas during semiconductor processing |
| DE102012203212B4 (de) * | 2012-03-01 | 2025-02-27 | Osram Oled Gmbh | Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses |
| US9460912B2 (en) * | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
| WO2014040002A2 (en) | 2012-09-10 | 2014-03-13 | Mudd Daniel T | Pressure based mass flow controller |
| KR101993355B1 (ko) | 2013-03-13 | 2019-09-30 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| KR102195139B1 (ko) * | 2014-02-20 | 2020-12-24 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| US9875888B2 (en) | 2014-10-03 | 2018-01-23 | Applied Materials, Inc. | High temperature silicon oxide atomic layer deposition technology |
| SG11201703195QA (en) | 2014-10-24 | 2017-05-30 | Versum Materials Us Llc | Compositions and methods using same for deposition of silicon-containing film |
| US10421766B2 (en) * | 2015-02-13 | 2019-09-24 | Versum Materials Us, Llc | Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films |
| CN114016001A (zh) * | 2015-12-21 | 2022-02-08 | 弗萨姆材料美国有限责任公司 | 用于沉积含硅膜的组合物及使用其的方法 |
| SG11201807211XA (en) * | 2016-02-26 | 2018-09-27 | Versum Materials Us Llc | Compositions and methods using same for deposition of silicon-containing film |
| US10679880B2 (en) | 2016-09-27 | 2020-06-09 | Ichor Systems, Inc. | Method of achieving improved transient response in apparatus for controlling flow and system for accomplishing same |
| US10838437B2 (en) | 2018-02-22 | 2020-11-17 | Ichor Systems, Inc. | Apparatus for splitting flow of process gas and method of operating same |
| US10303189B2 (en) | 2016-06-30 | 2019-05-28 | Reno Technologies, Inc. | Flow control system, method, and apparatus |
| US11144075B2 (en) | 2016-06-30 | 2021-10-12 | Ichor Systems, Inc. | Flow control system, method, and apparatus |
| US10663337B2 (en) | 2016-12-30 | 2020-05-26 | Ichor Systems, Inc. | Apparatus for controlling flow and method of calibrating same |
| US12057310B2 (en) | 2018-05-22 | 2024-08-06 | Versum Materials Us, Llc | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films |
| US11177127B2 (en) * | 2017-05-24 | 2021-11-16 | Versum Materials Us, Llc | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films |
| JP7329045B2 (ja) * | 2018-10-04 | 2023-08-17 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | 高品質酸化ケイ素薄膜の高温原子層堆積のための組成物 |
| EP3900022A4 (en) | 2018-12-21 | 2022-09-14 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | PRECURSORS AND PROCESSES FOR DEPOSITION OF SI CONTAINING COATINGS USING ALD AT A TEMPERATURE OF 550°C OR HIGHER |
| CN112777565B (zh) * | 2019-11-05 | 2022-11-22 | 中国科学院大连化学物理研究所 | 一种可抑制逆反应的半导体光催化分解水的方法 |
| TWI797640B (zh) | 2020-06-18 | 2023-04-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 基於矽之自組裝單層組成物及使用該組成物之表面製備 |
| JP2023542236A (ja) * | 2020-07-24 | 2023-10-05 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | ゲルマニウムシード層のための組成物およびそれを使用する方法 |
| US11899477B2 (en) | 2021-03-03 | 2024-02-13 | Ichor Systems, Inc. | Fluid flow control system comprising a manifold assembly |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1352951A (en) * | 1971-12-08 | 1974-05-15 | Shell Int Research | Electrostatic coating of glass-fibre material |
| US4863755A (en) * | 1987-10-16 | 1989-09-05 | The Regents Of The University Of California | Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors |
| JP3093070B2 (ja) * | 1993-01-26 | 2000-10-03 | 大阪瓦斯株式会社 | Ｃｖｄ薄膜形成装置 |
| US5976991A (en) * | 1998-06-11 | 1999-11-02 | Air Products And Chemicals, Inc. | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane |
| JP4722269B2 (ja) * | 2000-08-29 | 2011-07-13 | Ａｚエレクトロニックマテリアルズ株式会社 | 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法 |
| US6391803B1 (en) * | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
| US20080268177A1 (en) | 2002-05-17 | 2008-10-30 | Air Products And Chemicals, Inc. | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants |
| KR100505668B1 (ko) * | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 |
| US6838125B2 (en) * | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
| US20040197474A1 (en) | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
| JP3666751B2 (ja) | 2003-11-28 | 2005-06-29 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜形成システム |
| JP2006261434A (ja) * | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
| US7312129B2 (en) * | 2006-01-25 | 2007-12-25 | Freescale Semiconductor, Inc. | Method for producing two gates controlling the same channel |
| JP5177617B2 (ja) * | 2006-12-25 | 2013-04-03 | 独立行政法人産業技術総合研究所 | 酸化シリコン薄膜形成装置 |
| US7500397B2 (en) * | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
| WO2009006272A1 (en) | 2007-06-28 | 2009-01-08 | Advanced Technology Materials, Inc. | Precursors for silicon dioxide gap fill |
| US8580993B2 (en) * | 2008-11-12 | 2013-11-12 | Air Products And Chemicals, Inc. | Amino vinylsilane precursors for stressed SiN films |
| US8703624B2 (en) * | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
| US8889235B2 (en) | 2009-05-13 | 2014-11-18 | Air Products And Chemicals, Inc. | Dielectric barrier deposition using nitrogen containing precursor |
| US8242029B2 (en) * | 2009-11-23 | 2012-08-14 | Asm International N.V. | Method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate |
-
2010
- 2010-12-09 US US12/964,266 patent/US8460753B2/en not_active Expired - Fee Related
-
2011
- 2011-12-05 TW TW100144719A patent/TWI444499B/zh not_active IP Right Cessation
- 2011-12-08 KR KR1020110131008A patent/KR101404576B1/ko not_active Expired - Fee Related
- 2011-12-08 JP JP2011268617A patent/JP5357240B2/ja not_active Expired - Fee Related
- 2011-12-09 CN CN2011104239643A patent/CN102534548A/zh active Pending
- 2011-12-09 EP EP11192787.7A patent/EP2463404B1/en not_active Not-in-force
- 2011-12-09 CN CN201510580613.1A patent/CN105239055A/zh active Pending
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