CN102534548A - 用于CVD和ALD Si02薄膜的氨基乙烯基硅烷 - Google Patents

用于CVD和ALD Si02薄膜的氨基乙烯基硅烷 Download PDF

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Publication number
CN102534548A
CN102534548A CN2011104239643A CN201110423964A CN102534548A CN 102534548 A CN102534548 A CN 102534548A CN 2011104239643 A CN2011104239643 A CN 2011104239643A CN 201110423964 A CN201110423964 A CN 201110423964A CN 102534548 A CN102534548 A CN 102534548A
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China
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precursor
reactor
oxygen
ring
reactor drum
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Chinese (zh)
Inventor
萧满超
杨柳
K·S·卡思尔
H·R·鲍恩
韩冰
M·L·奥尼尔
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Air Products and Chemicals Inc
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Air Products and Chemicals Inc
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Priority to CN201510580613.1A priority Critical patent/CN105239055A/zh
Publication of CN102534548A publication Critical patent/CN102534548A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN2011104239643A 2010-12-09 2011-12-09 用于CVD和ALD Si02薄膜的氨基乙烯基硅烷 Pending CN102534548A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510580613.1A CN105239055A (zh) 2010-12-09 2011-12-09 用于CVD和ALD SiO2薄膜的氨基乙烯基硅烷

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/964,266 2010-12-09
US12/964,266 US8460753B2 (en) 2010-12-09 2010-12-09 Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes

Related Child Applications (1)

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CN201510580613.1A Division CN105239055A (zh) 2010-12-09 2011-12-09 用于CVD和ALD SiO2薄膜的氨基乙烯基硅烷

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CN201510580613.1A Pending CN105239055A (zh) 2010-12-09 2011-12-09 用于CVD和ALD SiO2薄膜的氨基乙烯基硅烷

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Country Link
US (1) US8460753B2 (https=)
EP (1) EP2463404B1 (https=)
JP (1) JP5357240B2 (https=)
KR (1) KR101404576B1 (https=)
CN (2) CN102534548A (https=)
TW (1) TWI444499B (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI602827B (zh) * 2015-02-13 2017-10-21 慧盛材料美國責任有限公司 雙胺基烷氧基矽烷化合物及使用其沉積含矽膜的方法
CN107429391A (zh) * 2014-10-24 2017-12-01 弗萨姆材料美国有限责任公司 组合物和使用所述组合物沉积含硅膜的方法
CN109072426A (zh) * 2016-02-26 2018-12-21 弗萨姆材料美国有限责任公司 组合物和使用其沉积含硅膜的方法
CN112777565A (zh) * 2019-11-05 2021-05-11 中国科学院大连化学物理研究所 一种可抑制逆反应的半导体光催化分解水的方法
CN116113725A (zh) * 2020-07-24 2023-05-12 弗萨姆材料美国有限责任公司 用于锗种子层的组合物及其使用方法
CN117050106A (zh) * 2017-05-24 2023-11-14 弗萨姆材料美国有限责任公司 作为用于高生长速率含硅膜的前体的官能化环硅氮烷

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9188989B1 (en) 2011-08-20 2015-11-17 Daniel T. Mudd Flow node to deliver process gas using a remote pressure measurement device
US9958302B2 (en) 2011-08-20 2018-05-01 Reno Technologies, Inc. Flow control system, method, and apparatus
US9448564B2 (en) 2013-02-15 2016-09-20 Reno Technologies, Inc. Gas delivery system for outputting fast square waves of process gas during semiconductor processing
DE102012203212B4 (de) * 2012-03-01 2025-02-27 Osram Oled Gmbh Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses
US9460912B2 (en) * 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
WO2014040002A2 (en) 2012-09-10 2014-03-13 Mudd Daniel T Pressure based mass flow controller
KR101993355B1 (ko) 2013-03-13 2019-09-30 삼성전자주식회사 반도체 장치의 제조 방법
KR102195139B1 (ko) * 2014-02-20 2020-12-24 삼성전자주식회사 반도체 장치의 제조 방법
US9875888B2 (en) 2014-10-03 2018-01-23 Applied Materials, Inc. High temperature silicon oxide atomic layer deposition technology
CN114016001A (zh) * 2015-12-21 2022-02-08 弗萨姆材料美国有限责任公司 用于沉积含硅膜的组合物及使用其的方法
US10679880B2 (en) 2016-09-27 2020-06-09 Ichor Systems, Inc. Method of achieving improved transient response in apparatus for controlling flow and system for accomplishing same
US10838437B2 (en) 2018-02-22 2020-11-17 Ichor Systems, Inc. Apparatus for splitting flow of process gas and method of operating same
US10303189B2 (en) 2016-06-30 2019-05-28 Reno Technologies, Inc. Flow control system, method, and apparatus
US11144075B2 (en) 2016-06-30 2021-10-12 Ichor Systems, Inc. Flow control system, method, and apparatus
US10663337B2 (en) 2016-12-30 2020-05-26 Ichor Systems, Inc. Apparatus for controlling flow and method of calibrating same
US12057310B2 (en) 2018-05-22 2024-08-06 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
JP7329045B2 (ja) * 2018-10-04 2023-08-17 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 高品質酸化ケイ素薄膜の高温原子層堆積のための組成物
EP3900022A4 (en) 2018-12-21 2022-09-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude PRECURSORS AND PROCESSES FOR DEPOSITION OF SI CONTAINING COATINGS USING ALD AT A TEMPERATURE OF 550°C OR HIGHER
TWI797640B (zh) 2020-06-18 2023-04-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 基於矽之自組裝單層組成物及使用該組成物之表面製備
US11899477B2 (en) 2021-03-03 2024-02-13 Ichor Systems, Inc. Fluid flow control system comprising a manifold assembly

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1239155A (zh) * 1998-06-11 1999-12-22 气体产品与化学公司 使用二(叔丁基氨基)硅烷淀积二氧化硅和氧氮化硅
CN1449576A (zh) * 2000-08-29 2003-10-15 克拉瑞特国际有限公司 具有低介电常数的多孔硅质膜和半导体装置及涂料组合物
EP2116632A2 (en) * 2008-05-05 2009-11-11 Air Products and Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
TW201034079A (en) * 2009-03-13 2010-09-16 Air Prod & Chem Dielectric films comprising silicon and methods for making same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1352951A (en) * 1971-12-08 1974-05-15 Shell Int Research Electrostatic coating of glass-fibre material
US4863755A (en) * 1987-10-16 1989-09-05 The Regents Of The University Of California Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
JP3093070B2 (ja) * 1993-01-26 2000-10-03 大阪瓦斯株式会社 Ｃｖｄ薄膜形成装置
US6391803B1 (en) * 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
KR100505668B1 (ko) * 2002-07-08 2005-08-03 삼성전자주식회사 원자층 증착 방법에 의한 실리콘 산화막 형성 방법
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20040197474A1 (en) 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
JP3666751B2 (ja) 2003-11-28 2005-06-29 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜形成システム
JP2006261434A (ja) * 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US7312129B2 (en) * 2006-01-25 2007-12-25 Freescale Semiconductor, Inc. Method for producing two gates controlling the same channel
JP5177617B2 (ja) * 2006-12-25 2013-04-03 独立行政法人産業技術総合研究所 酸化シリコン薄膜形成装置
US7500397B2 (en) * 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
WO2009006272A1 (en) 2007-06-28 2009-01-08 Advanced Technology Materials, Inc. Precursors for silicon dioxide gap fill
US8580993B2 (en) * 2008-11-12 2013-11-12 Air Products And Chemicals, Inc. Amino vinylsilane precursors for stressed SiN films
US8889235B2 (en) 2009-05-13 2014-11-18 Air Products And Chemicals, Inc. Dielectric barrier deposition using nitrogen containing precursor
US8242029B2 (en) * 2009-11-23 2012-08-14 Asm International N.V. Method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1239155A (zh) * 1998-06-11 1999-12-22 气体产品与化学公司 使用二(叔丁基氨基)硅烷淀积二氧化硅和氧氮化硅
CN1449576A (zh) * 2000-08-29 2003-10-15 克拉瑞特国际有限公司 具有低介电常数的多孔硅质膜和半导体装置及涂料组合物
EP2116632A2 (en) * 2008-05-05 2009-11-11 Air Products and Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
TW201034079A (en) * 2009-03-13 2010-09-16 Air Prod & Chem Dielectric films comprising silicon and methods for making same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107429391A (zh) * 2014-10-24 2017-12-01 弗萨姆材料美国有限责任公司 组合物和使用所述组合物沉积含硅膜的方法
CN113025992A (zh) * 2014-10-24 2021-06-25 弗萨姆材料美国有限责任公司 组合物和使用所述组合物沉积含硅膜的方法
CN113373428A (zh) * 2014-10-24 2021-09-10 弗萨姆材料美国有限责任公司 组合物和使用所述组合物沉积含硅膜的方法
US12049695B2 (en) 2014-10-24 2024-07-30 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
CN113025992B (zh) * 2014-10-24 2024-02-02 弗萨姆材料美国有限责任公司 组合物和使用所述组合物沉积含硅膜的方法
CN113373428B (zh) * 2014-10-24 2023-07-14 弗萨姆材料美国有限责任公司 组合物和使用所述组合物沉积含硅膜的方法
TWI602827B (zh) * 2015-02-13 2017-10-21 慧盛材料美國責任有限公司 雙胺基烷氧基矽烷化合物及使用其沉積含矽膜的方法
CN109072426A (zh) * 2016-02-26 2018-12-21 弗萨姆材料美国有限责任公司 组合物和使用其沉积含硅膜的方法
CN117050106A (zh) * 2017-05-24 2023-11-14 弗萨姆材料美国有限责任公司 作为用于高生长速率含硅膜的前体的官能化环硅氮烷
CN112777565A (zh) * 2019-11-05 2021-05-11 中国科学院大连化学物理研究所 一种可抑制逆反应的半导体光催化分解水的方法
CN112777565B (zh) * 2019-11-05 2022-11-22 中国科学院大连化学物理研究所 一种可抑制逆反应的半导体光催化分解水的方法
CN116113725A (zh) * 2020-07-24 2023-05-12 弗萨姆材料美国有限责任公司 用于锗种子层的组合物及其使用方法
CN116113725B (zh) * 2020-07-24 2025-10-31 弗萨姆材料美国有限责任公司 用于锗种子层的组合物及其使用方法

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JP5357240B2 (ja) 2013-12-04
TWI444499B (zh) 2014-07-11
KR20120064635A (ko) 2012-06-19
TW201224193A (en) 2012-06-16
KR101404576B1 (ko) 2014-06-09
EP2463404B1 (en) 2019-10-23
CN105239055A (zh) 2016-01-13
US20120148745A1 (en) 2012-06-14
EP2463404A1 (en) 2012-06-13
JP2012124492A (ja) 2012-06-28
US8460753B2 (en) 2013-06-11

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Application publication date: 20120704