JP2021518670A5 - - Google Patents

Info

Publication number
JP2021518670A5
JP2021518670A5 JP2020550634A JP2020550634A JP2021518670A5 JP 2021518670 A5 JP2021518670 A5 JP 2021518670A5 JP 2020550634 A JP2020550634 A JP 2020550634A JP 2020550634 A JP2020550634 A JP 2020550634A JP 2021518670 A5 JP2021518670 A5 JP 2021518670A5
Authority
JP
Japan
Prior art keywords
layer
region
photoresist
figures
formation
Prior art date
Application number
JP2020550634A
Other languages
English (en)
Japanese (ja)
Other versions
JP7372932B2 (ja
JPWO2019182681A5 (https=
JP2021518670A (ja
Filing date
Publication date
Priority claimed from US15/933,124 external-priority patent/US10312247B1/en
Application filed filed Critical
Publication of JP2021518670A publication Critical patent/JP2021518670A/ja
Publication of JPWO2019182681A5 publication Critical patent/JPWO2019182681A5/ja
Publication of JP2021518670A5 publication Critical patent/JP2021518670A5/ja
Application granted granted Critical
Publication of JP7372932B2 publication Critical patent/JP7372932B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2020550634A 2018-03-22 2019-01-23 ２トランジスタｆｉｎｆｅｔベースのスプリットゲート不揮発性浮遊ゲートフラッシュメモリ及び製造方法 Active JP7372932B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/933,124 2018-03-22
US15/933,124 US10312247B1 (en) 2018-03-22 2018-03-22 Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication
PCT/US2019/014816 WO2019182681A2 (en) 2018-03-22 2019-01-23 Two transistor finfet-based split gate non-volatile floating gate flash memory and method of fabrication

Publications (4)

Publication Number Publication Date
JP2021518670A JP2021518670A (ja) 2021-08-02
JPWO2019182681A5 JPWO2019182681A5 (https=) 2022-01-24
JP2021518670A5 true JP2021518670A5 (https=) 2022-01-24
JP7372932B2 JP7372932B2 (ja) 2023-11-01

Family

ID=66673359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020550634A Active JP7372932B2 (ja) 2018-03-22 2019-01-23 ２トランジスタｆｉｎｆｅｔベースのスプリットゲート不揮発性浮遊ゲートフラッシュメモリ及び製造方法

Country Status (7)

Country Link
US (1) US10312247B1 (https=)
EP (1) EP3769338B1 (https=)
JP (1) JP7372932B2 (https=)
KR (1) KR102350218B1 (https=)
CN (1) CN111868928B (https=)
TW (1) TWI693698B (https=)
WO (1) WO2019182681A2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854074B (zh) * 2019-11-27 2023-08-25 上海华力微电子有限公司 改善2d-nand侧墙倾斜的方法
US20210193671A1 (en) 2019-12-20 2021-06-24 Silicon Storage Technology, Inc. Method Of Forming A Device With Split Gate Non-volatile Memory Cells, HV Devices Having Planar Channel Regions And FINFET Logic Devices
US11114451B1 (en) 2020-02-27 2021-09-07 Silicon Storage Technology, Inc. Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices
US11362100B2 (en) * 2020-03-24 2022-06-14 Silicon Storage Technology, Inc. FinFET split gate non-volatile memory cells with enhanced floating gate to floating gate capacitive coupling
CN111415937B (zh) * 2020-05-13 2023-04-25 上海华虹宏力半导体制造有限公司 存储器及其形成方法
CN114256251B (zh) 2020-09-21 2025-05-13 硅存储技术股份有限公司 形成具有存储器单元、高压器件和逻辑器件的设备的方法
CN114446972B (zh) * 2020-10-30 2025-09-05 硅存储技术股份有限公司 具有鳍式场效应晶体管结构的分裂栅非易失性存储器单元、hv和逻辑器件及其制造方法
TWI766609B (zh) 2021-03-10 2022-06-01 華邦電子股份有限公司 半導體記憶體結構
US12453136B2 (en) * 2022-03-08 2025-10-21 Silicon Storage Technology, Inc. Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate
WO2023172279A1 (en) * 2022-03-08 2023-09-14 Silicon Storage Technology, Inc. Method of forming a device with planar split gate non-volatile memory cells, planar hv devices, and finfet logic devices on a substrate
CN119451108A (zh) * 2023-07-28 2025-02-14 中芯国际集成电路制造(北京)有限公司 半导体结构及其形成方法
CN117596878B (zh) * 2024-01-15 2024-04-09 上海朔集半导体科技有限公司 一种u型的浮栅型分栅嵌入式非挥发存储器及其制造方法
WO2025155320A1 (en) 2024-01-16 2025-07-24 Silicon Storage Technology, Inc. Vertically oriented split gate non-volatile memory cells, and method of making same

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029130A (en) 1990-01-22 1991-07-02 Silicon Storage Technology, Inc. Single transistor non-valatile electrically alterable semiconductor memory device
US6747310B2 (en) 2002-10-07 2004-06-08 Actrans System Inc. Flash memory cells with separated self-aligned select and erase gates, and process of fabrication
US20050012137A1 (en) * 2003-07-18 2005-01-20 Amitay Levi Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing
US7315056B2 (en) 2004-06-07 2008-01-01 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with program/erase and select gates
US7423310B2 (en) 2004-09-29 2008-09-09 Infineon Technologies Ag Charge-trapping memory cell and charge-trapping memory device
KR100652384B1 (ko) * 2004-11-08 2006-12-06 삼성전자주식회사 2비트 형태의 불휘발성 메모리소자 및 그 제조방법
KR101100428B1 (ko) 2005-09-23 2011-12-30 삼성전자주식회사 ＳＲＯ(Ｓｉｌｉｃｏｎ Ｒｉｃｈ Ｏｘｉｄｅ) 및 이를적용한 반도체 소자의 제조방법
WO2007036874A1 (en) * 2005-09-28 2007-04-05 Nxp B.V. Finfet-based non-volatile memory device
KR100663366B1 (ko) * 2005-10-26 2007-01-02 삼성전자주식회사 자기 정렬된 부유게이트를 갖는 플래시메모리소자의제조방법 및 관련된 소자
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US20090039410A1 (en) 2007-08-06 2009-02-12 Xian Liu Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing
KR20090017041A (ko) 2007-08-13 2009-02-18 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US8068370B2 (en) * 2008-04-18 2011-11-29 Macronix International Co., Ltd. Floating gate memory device with interpoly charge trapping structure
WO2010082328A1 (ja) * 2009-01-15 2010-07-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2011003742A (ja) * 2009-06-18 2011-01-06 Toshiba Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法
US8461640B2 (en) 2009-09-08 2013-06-11 Silicon Storage Technology, Inc. FIN-FET non-volatile memory cell, and an array and method of manufacturing
US8785273B2 (en) * 2012-04-11 2014-07-22 International Business Machines Corporation FinFET non-volatile memory and method of fabrication
US9406689B2 (en) * 2013-07-31 2016-08-02 Qualcomm Incorporated Logic finFET high-K/conductive gate embedded multiple time programmable flash memory
US9305930B2 (en) * 2013-12-11 2016-04-05 Globalfoundries Inc. Finfet crosspoint flash memory
US9171855B2 (en) 2013-12-30 2015-10-27 Globalfoundries Singapore Pte. Ltd. Three-dimensional non-volatile memory
US9614048B2 (en) * 2014-06-17 2017-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. Split gate flash memory structure and method of making the split gate flash memory structure
US9312268B2 (en) * 2014-09-02 2016-04-12 Globalfoundries Singapore Pte. Ltd. Integrated circuits with FinFET nonvolatile memory
US9276005B1 (en) 2014-12-04 2016-03-01 Silicon Storage Technology, Inc. Non-volatile memory array with concurrently formed low and high voltage logic devices
US9276006B1 (en) 2015-01-05 2016-03-01 Silicon Storage Technology, Inc. Split gate non-volatile flash memory cell having metal-enhanced gates and method of making same
US9634018B2 (en) * 2015-03-17 2017-04-25 Silicon Storage Technology, Inc. Split gate non-volatile memory cell with 3D finFET structure, and method of making same
WO2016194211A1 (ja) * 2015-06-04 2016-12-08 株式会社 東芝 半導体記憶装置及びその製造方法
JP6578172B2 (ja) * 2015-09-18 2019-09-18 ルネサスエレクトロニクス株式会社 半導体装置
US10141321B2 (en) * 2015-10-21 2018-11-27 Silicon Storage Technology, Inc. Method of forming flash memory with separate wordline and erase gates
KR102056995B1 (ko) 2015-11-03 2019-12-17 실리콘 스토리지 테크놀로지 인크 금속 게이트들을 갖는 분리형 게이트 비휘발성 플래시 메모리 셀 및 이를 제조하는 방법
US9842848B2 (en) * 2015-12-14 2017-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded HKMG non-volatile memory
US9666589B1 (en) * 2016-03-21 2017-05-30 Globalfoundries Inc. FinFET based flash memory cell
US9837425B2 (en) * 2016-04-19 2017-12-05 United Microelectronics Corp. Semiconductor device with split gate flash memory cell structure and method of manufacturing the same
US9985042B2 (en) * 2016-05-24 2018-05-29 Silicon Storage Technology, Inc. Method of integrating FinFET CMOS devices with embedded nonvolatile memory cells
JP6652451B2 (ja) * 2016-06-14 2020-02-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9911867B2 (en) * 2016-07-01 2018-03-06 Globalfoundries Singapore Pte. Ltd. Fin-based nonvolatile memory structures, integrated circuits with such structures, and methods for fabricating same
CN107799471B (zh) * 2016-09-05 2020-04-10 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置

Similar Documents

Publication Publication Date Title
JP2021518670A5 (https=)
TWI556066B (zh) 執行自對準微影蝕刻製程的方法
US8003466B2 (en) Method of forming multiple fins for a semiconductor device
CN101393846B (zh) 形成半导体器件的图案的方法
TWI660402B (zh) 半導體結構及其製造方法
CN106876336B (zh) 半导体结构及其制造方法
TW201234493A (en) Method of manufacturing semiconductor device
TWI508131B (zh) 形成精細圖案之方法
US9034762B2 (en) Triple patterning method
JP2011502353A5 (https=)
JPWO2019182681A5 (https=)
TWI701712B (zh) 圖案化目標層的製備方法
JP2013511153A5 (https=)
CN104733322A (zh) 用于制造多栅器件的鳍的方法和用于制造鳍的芯结构
CN104425220A (zh) 图案的形成方法
TWI373828B (en) Flash memory cell with a flare gate
CN109872993B (zh) 半导体结构的布局、半导体装置及其形成方法
US8383300B2 (en) Exposure mask with double patterning technology and method for fabricating semiconductor device using the same
TW201539536A (zh) 在半導體裝置內形成圖案的方法
JP2011108812A (ja) 半導体装置の製造方法
CN105789049B (zh) 图案化鳍式场效应晶体管（finfet）器件的多个部件的方法
CN107919279B (zh) 形成图案化结构的方法
JP2009164454A (ja) 半導体装置の製造方法および半導体装置
CN104157553A (zh) 双重图形化形成方法
US10340149B2 (en) Method of forming dense hole patterns of semiconductor devices