JP7372932B2 - 2トランジスタfinfetベースのスプリットゲート不揮発性浮遊ゲートフラッシュメモリ及び製造方法 - Google Patents
2トランジスタfinfetベースのスプリットゲート不揮発性浮遊ゲートフラッシュメモリ及び製造方法 Download PDFInfo
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- 230000015654 memory Effects 0.000 title claims description 153
- 238000007667 floating Methods 0.000 title claims description 101
- 238000004519 manufacturing process Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims 4
- 210000004027 cell Anatomy 0.000 description 122
- 230000008569 process Effects 0.000 description 81
- 239000010410 layer Substances 0.000 description 46
- 229920002120 photoresistant polymer Polymers 0.000 description 35
- 150000004767 nitrides Chemical class 0.000 description 21
- 125000006850 spacer group Chemical group 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 210000003850 cellular structure Anatomy 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910008479 TiSi2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
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Description
本特許出願は、2018年3月22日出願の「Two Transistor Finfet-Based Split Gate Non-volatile Floating Gate Flash Memory And Method of Fabrication」と題する米国特許出願第15/933,124号に対する優先権を主張する。
Claims (21)
- 不揮発性メモリセルであって、該不揮発性メモリセルは、
互いに対向する第1及び第2の側面を含む上方に延在するフィンと、互いに対向する第3及び第4の側面を含む、上方に延在する第2のフィンとを備えた上面を有する半導体基板と、
前記フィンの第1の部分と電気的に接触する第1の電極と、
前記フィンの第2の部分と電気的に接触する第2の電極であって、前記フィンのチャネル領域は、前記第1及び第2の側面の部分を含み、前記フィンの前記第1の部分と前記第2の部分との間に延在するように、前記フィンの前記第1及び第2の部分は互いに離間している、第2の電極と、
前記チャネル領域の第1の部分に沿って延在する浮遊ゲートであって、前記浮遊ゲートは、前記第1の側面に沿って延在し、前記第1の側面から絶縁され、前記浮遊ゲートのいずれの部分も前記第2の側面に沿って延在しない、前記浮遊ゲートの少なくとも一部分は、前記フィンと前記第2のフィンとの間に配設され、前記第3の側面に沿って延在し、前記第3の側面から絶縁され、前記浮遊ゲートのいずれの部分も前記第4の側面に沿って延在しない、いずれの導電性ゲートも、前記浮遊ゲートがそれに沿って延在する、前記第1の側面の一部分と対向する前記第2の側面の一部分に沿って配設されず、前記第2の側面の前記部分から絶縁されない、いずれの導電性ゲートも、前記浮遊ゲートがそれに沿って延在する、前記第3の側面の一部分と対向する前記第4の側面の一部分に沿って配設されず、前記第4の側面の前記部分から絶縁されない、浮遊ゲートと、
前記チャネル領域の第2の部分に沿って延在するワード線ゲートであって、前記ワード線ゲートは、前記第1及び第2の側面に沿って延在し、前記第1及び第2の側面から絶縁される、ワード線ゲートと、
前記浮遊ゲートの上方に配設され、前記浮遊ゲートから絶縁された制御ゲートと、
前記浮遊ゲートに横方向に隣接して配設され、前記浮遊ゲートから絶縁された第1の部分と、前記浮遊ゲートの上方に垂直に配設され、前記浮遊ゲートから絶縁された第2の部分と、を有する消去ゲートと、を備える、不揮発性メモリセル。 - 前記ワード線ゲートは金属材料を含み、前記ワード線ゲートは、高K絶縁材料によって前記第1及び第2の側面から絶縁される、請求項1に記載の不揮発性メモリセル。
- 前記浮遊ゲート、前記制御ゲート、及び前記消去ゲートは、それぞれポリシリコン材料を含む、請求項2に記載の不揮発性メモリセル。
- 前記第1及び第2の電極は、それぞれ金属材料を含む、請求項3に記載の不揮発性メモリセル。
- 前記制御ゲート及び前記消去ゲートは、それぞれ前記フィンの上方に垂直に配設される、請求項1に記載の不揮発性メモリセル。
- 前記フィンの前記第1及び第2の部分は、それぞれ前記フィンの前記チャネル領域の幅よりも大きい幅を有する、請求項1に記載の不揮発性メモリセル。
- 前記フィンの前記第1及び第2の部分は、それぞれ前記フィンの前記チャネル領域の高さよりも大きい高さを有する、請求項1に記載の不揮発性メモリセル。
- 前記第1の電極は、前記フィンの前記第1の部分の前記第1及び第2の側面に沿って延在し、前記第2の電極は、前記フィンの前記第2の部分の前記第1及び第2の側面に沿って延在する、請求項1に記載の不揮発性メモリセル。
- 前記浮遊ゲートは矩形の垂直断面を有する、請求項1に記載の不揮発性メモリセル。
- 前記浮遊ゲートはU字形の垂直断面を有する、請求項1に記載の不揮発性メモリセル。
- 前記制御ゲートは、前記浮遊ゲートの前記U字形の垂直断面内に延在する下部を含む、請求項10に記載の不揮発性メモリセル。
- 不揮発性メモリセルを形成する方法であって、該方法は、
半導体基板の上面が、互いに対向する第1及び第2の側面を含む、上方に延在するフィンと、互いに対向する第3及び第4の側面を含む、上方に延在する第2のフィンとを含むように、前記半導体基板の前記上面にトレンチを形成するステップと、
前記フィンの第1の部分と電気的に接触する第1の電極を形成するステップと、
前記フィンの第2の部分と電気的に接触する第2の電極を形成するステップであって、前記フィンのチャネル領域は、前記第1及び第2の側面の部分を含み、前記フィンの前記第1の部分と前記第2の部分との間に延在するように、前記フィンの前記第1及び第2の部分は互いに離間している、形成するステップと、
前記チャネル領域の第1の部分に沿って延在する浮遊ゲートを形成するステップであって、前記浮遊ゲートは、前記第1の側面に沿って延在し、前記第1の側面から絶縁され、前記浮遊ゲートのいずれの部分も前記第2の側面に沿って延在しない、前記浮遊ゲートの少なくとも一部分は、前記フィンと前記第2のフィンとの間に配設され、前記第3の側面に沿って延在し、前記第3の側面から絶縁され、前記浮遊ゲートのいずれの部分も前記第4の側面に沿って延在しない、いずれの導電性ゲートも、前記浮遊ゲートがそれに沿って延在する、前記第1の側面の一部分と対向する前記第2の側面の一部分に沿って配設されず、前記第2の側面の前記部分から絶縁されない、いずれの導電性ゲートも、前記浮遊ゲートがそれに沿って延在する、前記第3の側面の一部分と対向する前記第4の側面の一部分に沿って配設されず、前記第4の側面の前記部分から絶縁されない、形成するステップと、
前記チャネル領域の第2の部分に沿って延在するワード線ゲートを形成するステップであって、前記ワード線ゲートは、前記第1及び第2の側面に沿って延在し、前記第1及び第2の側面から絶縁される、形成するステップと、
前記浮遊ゲートの上方に配設され、前記浮遊ゲートから絶縁された制御ゲートを形成するステップと、
前記浮遊ゲートに横方向に隣接して配設され、前記浮遊ゲートから絶縁された第1の部分と、前記浮遊ゲートの上方に垂直に配設され、前記浮遊ゲートから絶縁された第2の部分と、を有する消去ゲートを形成するステップと、を含む、方法。 - 前記ワード線ゲートは金属材料を含み、前記ワード線ゲートは、高K絶縁材料によって前記第1及び第2の側面から絶縁される、請求項12に記載の方法。
- 前記浮遊ゲート、前記制御ゲート、及び前記消去ゲートは、それぞれポリシリコン材料を含む、請求項12に記載の方法。
- 前記第1及び第2の電極は、それぞれ金属材料を含む、請求項14に記載の方法。
- 前記制御ゲート及び前記消去ゲートは、それぞれ前記フィンの上方に垂直に配設される、請求項12に記載の方法。
- 前記フィンの前記第1及び第2の部分のそれぞれは、それぞれ前記フィンの前記チャネル領域の幅及び高さよりも大きい幅及び高さを有する、請求項12に記載の方法。
- 前記第1の電極は、前記フィンの前記第1の部分の前記第1及び第2の側面に沿って延在し、前記第2の電極は、前記フィンの前記第2の部分の前記第1及び第2の側面に沿って延在する、請求項12に記載の方法。
- 前記浮遊ゲートは、矩形の垂直断面を有する、請求項12に記載の方法。
- 前記浮遊ゲートは、U字形の垂直断面を有する、請求項12に記載の方法。
- 前記制御ゲートは、前記浮遊ゲートの前記U字形の垂直断面内に延在する下部を含む、請求項20に記載の方法。
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PCT/US2019/014816 WO2019182681A2 (en) | 2018-03-22 | 2019-01-23 | Two transistor finfet-based split gate non-volatile floating gate flash memory and method of fabrication |
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