JP2019534550A5 - - Google Patents
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- Publication number
- JP2019534550A5 JP2019534550A5 JP2019513837A JP2019513837A JP2019534550A5 JP 2019534550 A5 JP2019534550 A5 JP 2019534550A5 JP 2019513837 A JP2019513837 A JP 2019513837A JP 2019513837 A JP2019513837 A JP 2019513837A JP 2019534550 A5 JP2019534550 A5 JP 2019534550A5
- Authority
- JP
- Japan
- Prior art keywords
- mask
- cut region
- dummy gates
- gate cut
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 claims 17
- 238000002955 isolation Methods 0.000 claims 10
- 229920002120 photoresistant polymer Polymers 0.000 claims 10
- 238000000151 deposition Methods 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/271,867 US9997360B2 (en) | 2016-09-21 | 2016-09-21 | Method for mitigating layout effect in FINFET |
| US15/271,867 | 2016-09-21 | ||
| PCT/US2017/048841 WO2018057243A1 (en) | 2016-09-21 | 2017-08-28 | Layout effect mitigation in finfet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019534550A JP2019534550A (ja) | 2019-11-28 |
| JP2019534550A5 true JP2019534550A5 (https=) | 2020-09-24 |
Family
ID=59791201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019513837A Ceased JP2019534550A (ja) | 2016-09-21 | 2017-08-28 | ＦｉｎＦＥＴにおけるレイアウトの影響の緩和 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9997360B2 (https=) |
| EP (1) | EP3516696B1 (https=) |
| JP (1) | JP2019534550A (https=) |
| KR (1) | KR20190046884A (https=) |
| CN (1) | CN109716529A (https=) |
| BR (1) | BR112019004961A2 (https=) |
| WO (1) | WO2018057243A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9997360B2 (en) | 2016-09-21 | 2018-06-12 | Qualcomm Incorporated | Method for mitigating layout effect in FINFET |
| CN111508897A (zh) * | 2019-01-31 | 2020-08-07 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
| JP7370730B2 (ja) * | 2019-05-14 | 2023-10-30 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| CN110752152B (zh) * | 2019-10-17 | 2021-10-15 | 上海华力集成电路制造有限公司 | 鳍式晶体管的多晶硅栅截断的工艺方法 |
| US11842994B2 (en) | 2020-04-30 | 2023-12-12 | Taiwan Semiconductor Manufacturing Company, Ltd | Semiconductor device having staggered gate-stub-size profile and method of manufacturing same |
| DE102020132921A1 (de) * | 2020-04-30 | 2021-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | HALBLEITERVORRICHTUNG MIT GESTUFTEM GATESTUMPFGRÖßENPROFIL UND VERFAHREN ZUR HERSTELLUNG DAVON |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09246406A (ja) * | 1996-03-12 | 1997-09-19 | Toshiba Corp | 半導体装置とその製造方法 |
| US6677645B2 (en) * | 2002-01-31 | 2004-01-13 | International Business Machines Corporation | Body contact MOSFET |
| US20130309856A1 (en) | 2012-05-15 | 2013-11-21 | International Business Machines Corporation | Etch resistant barrier for replacement gate integration |
| KR101937851B1 (ko) * | 2012-06-27 | 2019-04-10 | 삼성전자 주식회사 | 반도체 집적 회로, 그 설계 방법 및 제조방법 |
| US8835237B2 (en) | 2012-11-07 | 2014-09-16 | International Business Machines Corporation | Robust replacement gate integration |
| CN103855021B (zh) * | 2012-12-04 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | 一种FinFET器件的制造方法 |
| US9263252B2 (en) | 2013-01-07 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of protecting an interlayer dielectric layer and structure formed thereby |
| US9997617B2 (en) * | 2013-03-13 | 2018-06-12 | Qualcomm Incorporated | Metal oxide semiconductor (MOS) isolation schemes with continuous active areas separated by dummy gates and related methods |
| US9153478B2 (en) * | 2013-03-15 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer etching process for integrated circuit design |
| KR102025309B1 (ko) * | 2013-08-22 | 2019-09-25 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| US9117886B2 (en) | 2013-11-27 | 2015-08-25 | United Microelectronics Corp. | Method for fabricating a semiconductor device by forming and removing a dummy gate structure |
| US9214557B2 (en) * | 2014-02-06 | 2015-12-15 | Globalfoundries Singapore Pte. Ltd. | Device with isolation buffer |
| US9373641B2 (en) | 2014-08-19 | 2016-06-21 | International Business Machines Corporation | Methods of forming field effect transistors using a gate cut process following final gate formation |
| KR102197402B1 (ko) | 2014-10-14 | 2020-12-31 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| US9379104B1 (en) | 2015-03-05 | 2016-06-28 | Globalfoundries Inc. | Method to make gate-to-body contact to release plasma induced charging |
| US9653281B2 (en) * | 2015-06-22 | 2017-05-16 | Qualcomm Incorporated | Structure and method for tunable memory cells including fin field effect transistors |
| US9853112B2 (en) * | 2015-07-17 | 2017-12-26 | Qualcomm Incorporated | Device and method to connect gate regions separated using a gate cut |
| US9627474B2 (en) * | 2015-09-18 | 2017-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices and methods of fabricating the same |
| US9634138B1 (en) * | 2016-08-24 | 2017-04-25 | Qualcomm Incorporated | Field-effect transistor (FET) devices employing adjacent asymmetric active gate / dummy gate width layout |
| US9997360B2 (en) | 2016-09-21 | 2018-06-12 | Qualcomm Incorporated | Method for mitigating layout effect in FINFET |
-
2016
- 2016-09-21 US US15/271,867 patent/US9997360B2/en not_active Expired - Fee Related
-
2017
- 2017-08-28 EP EP17762028.3A patent/EP3516696B1/en active Active
- 2017-08-28 KR KR1020197007823A patent/KR20190046884A/ko not_active Ceased
- 2017-08-28 WO PCT/US2017/048841 patent/WO2018057243A1/en not_active Ceased
- 2017-08-28 CN CN201780058467.3A patent/CN109716529A/zh active Pending
- 2017-08-28 JP JP2019513837A patent/JP2019534550A/ja not_active Ceased
- 2017-08-28 BR BR112019004961-4A patent/BR112019004961A2/pt not_active Application Discontinuation
-
2018
- 2018-03-02 US US15/910,929 patent/US10181403B2/en active Active
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