TWI642110B - 半導體元件及其製作方法 - Google Patents

半導體元件及其製作方法 Download PDF

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TWI642110B
TWI642110B TW103142048A TW103142048A TWI642110B TW I642110 B TWI642110 B TW I642110B TW 103142048 A TW103142048 A TW 103142048A TW 103142048 A TW103142048 A TW 103142048A TW I642110 B TWI642110 B TW I642110B
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fin structure
epitaxial layer
substrate
sacrificial
forming
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TW103142048A
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TW201622012A (zh
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劉恩銓
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聯華電子股份有限公司
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Priority to TW103142048A priority Critical patent/TWI642110B/zh
Priority to US14/588,989 priority patent/US9385220B2/en
Priority to US15/170,904 priority patent/US9608090B2/en
Publication of TW201622012A publication Critical patent/TW201622012A/zh
Priority to US15/188,998 priority patent/US9614061B2/en
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Publication of TWI642110B publication Critical patent/TWI642110B/zh

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Abstract

本發明揭露一種製作半導體元件的方法。首先提供一基底，然後形成一犧牲軸心體於基底上，其中該犧牲軸心體包含一缺口。之後再形成一側壁子於犧牲軸心體旁。

Description

半導體元件及其製作方法
本發明是關於一種製作半導體元件的方法，尤指一種利用側壁圖案轉移(sidewall image transfer,SIT)技術形成鰭狀結構的方法。
隨著半導體元件尺寸的縮小，維持小尺寸半導體元件的效能是目前業界的主要目標。然而，隨著場效電晶體(field effect transistors,FETs)元件尺寸持續地縮小，平面式(planar)場效電晶體元件的發展已面臨製程上之極限。非平面(non-planar)式場效電晶體元件，例如鰭狀場效電晶體(fin field effect transistor,Fin FET)元件，具有立體結構可增加與閘極之間接觸面積，進而提升閘極對於通道區域的控制，儼然已取代平面式場效電晶體成為目前的主流發展趨勢。
現有鰭狀場效電晶體的製程是先將鰭狀結構形成於基底上，再將閘極形成於鰭狀結構上。鰭狀結構一般為蝕刻基底所形成的條狀鰭片，但在尺寸微縮的要求下，各鰭片寬度漸窄，而鰭片之間的間距也漸縮小。因此，其製程也面臨許多限制與挑戰，例如現有遮罩及微影蝕刻技術受限於微小尺寸的限制，無法準確定義鰭狀結構的位置而造成鰭片倒塌，或是無法準確控制蝕刻時間而導致過度蝕刻等問題，連帶影響鰭狀結構的作用效能。
本發明較佳實施例揭露一種製作半導體元件的方法。首先提供一基底，然後形成一犧牲軸心體於基底上，其中該犧牲軸心體包含一缺口。之後再形成一側壁子於犧牲軸心體旁。
本發明另一實施例揭露一種半導體元件，其包含一基底；一鰭狀結構設於該基底上，該鰭狀結構包含一閘極結構設於其上以及一第一磊晶層該閘極結構兩側；一虛置鰭狀結構設於該基底上且鄰近該鰭狀結構，該虛置鰭狀結構包含一第二磊晶層；以及一接觸插塞設於該第一磊晶層及該第二磊晶層上。
本發明又一實施例揭露一種半導體元件，其包含一基底，一鰭狀結構設於基底上以及一虛置鰭狀結構設於基底上並鄰近鰭狀結構，且該虛置鰭狀結構包含一曲線。
12‧‧‧基底
14‧‧‧犧牲軸心體
16‧‧‧犧牲軸心體
18‧‧‧缺口
20‧‧‧第一側邊
22‧‧‧第二側邊
24‧‧‧側壁子
26‧‧‧側壁子
28‧‧‧鰭狀結構
30‧‧‧鰭狀結構
32‧‧‧鰭狀結構
34‧‧‧虛置鰭狀結構
36‧‧‧閘極結構
38‧‧‧閘極結構
40‧‧‧第一磊晶層
42‧‧‧第二磊晶層
44‧‧‧矽化金屬層
46‧‧‧接觸插塞
48‧‧‧轉折
50‧‧‧曲線
第1圖至第5圖為本發明較佳實施例製作一半導體元件之方法示意圖。
第6圖為第5圖中沿著切線AA'之剖面示意圖。
請參照第1圖至第5圖，第1圖至第5圖為本發明較佳實施例製作一半導體元件之上示圖。如第1圖所示，首先提供一基底12，例如一矽基底，然後形成至少一犧牲軸心體(sacrificial mandrel)，例如犧牲軸心體14、16於基底12上。在本實施例中，製作犧牲軸心體14、16的方式可先全面性形成一材料層(圖未示)於基底12上，然後進行一圖案轉移製程，利用蝕刻去除部分材料層，以形成複數個圖案化材料層作為犧牲軸心體14、16於基底12上。在本實施例中，犧牲軸心體14、16可選自多晶矽(polysilicon)，氧化矽，或氮化矽等材料，但並不局限於此。另外需注意的是，本實施例雖以兩條犧牲軸心體14、16為例，但並不局限於此，本發明又可視製程需求調整犧牲軸心體14、16的數量，此實施例也屬本發明所涵蓋的範圍。
接著進行犧牲軸心體切割製程，例如可形成一圖案化遮罩，例如一圖案化光阻於犧牲軸心體14、16上並暴露出部分的犧牲軸心體16，然後利用蝕刻去除部分犧牲軸心體16以形成一缺口18且不斷開犧牲軸心體16。在本實施例中，所形成之缺口18較佳為方形，例如正方形或長方形，但不侷限於此，又可視製程需求調整圖案化光阻所暴露出的區域圖案，以形成任何幾何形狀的缺口。以另一個角度來看，經由上述切割製程所形成的犧牲軸心體圖案14、16各具有一第一側邊20與一第二側邊22，其中犧牲軸心體16的第二側邊22包含前述以切割製程所形成之缺口18。
接著如第2圖所示，先形成一遮蓋層(圖未示)並覆蓋犧牲軸心體14、16與基底12，然後進行一回蝕刻製程去除部分遮蓋層，以分別形成一側壁子24、26環繞犧牲軸心體14、16。需注意的是，由於犧牲軸心體16的第二側邊22包含缺口18，因此位於於第二側邊22的側壁子26較佳具有一轉折處，例如圖中所示約略C型之轉折48。
如第3圖所示，接著先去除犧牲軸心體14、16，利用各犧牲軸心體14、16周圍的側壁子24、26為遮罩去除部分基底12，並搭配進行一鰭狀結構切割製程，以於基底12中形成鰭狀結構28、30、32與一虛置鰭狀結構34。然後可於鰭狀結構28、30、32與虛置鰭狀結構34形成後去除側壁子24、26。
在本實施例中，鰭狀結構切割製程較佳利用例如蝕刻等方式去除頭尾兩端連接處的鰭狀結構28、30、32與虛置鰭狀結構34，使原本構成環形之鰭狀結構28、30、32與虛置鰭狀結構34分隔為彼此不相接觸的條狀圖案，其中鰭狀結構28、30、32會於後續製程中於其上形成閘極結構而虛置鰭狀結構34上則不會形成任何閘極結構。由於所形成的鰭狀結構28、30、32與虛置鰭狀結構34較佳由側壁子24、26的圖案轉移而成，因此鰭狀結構28、30、32與虛置鰭狀結構34的位置與圖案較佳對應先前側壁子24、26的位置與圖案。更具體而言，本實施例之鰭狀結構28、30、32較佳為筆直之長條形圖案，而虛置鰭狀結構34則較佳具有一轉折處之長條形圖案，例如具有圖中所示約略C型之轉折48。需注意的是，圖中所示意之轉折雖以直角型轉折進行說明，但在實際製程情況下，例如經過光學近場效應(optical proximity effect，OPE)、蝕刻、清洗等步驟影響後，如第4圖所示，虛置鰭狀結構34的轉折處較佳呈現一曲線50，例如一約略Ω形之曲線50。
接著請同時參照第5圖及第6圖，其中第6圖為第5圖中沿著切線AA'之剖面示意圖。如第5圖及第6圖所示，然後進行一閘極結構製程，例如先形成一閘極結構36於鰭狀結構32上以及一 閘極結構38於鰭狀結構28、30上，其中閘極結構36、38之組成可依據一般先閘極(gate first)製程、後閘極(gate last)製程之先閘極介電層(high-k first)製程以及後閘極製程之後閘極介電層(high-k last)製程等而有所不同，例如可包含介質層、高介電常數介電層、底部金屬阻隔層(bottom barrier metal,BBM)、由多晶矽所構成之矽層以及硬遮罩等材料層。由於閘極結構之製作為本領域者所熟知技藝，在此不另加贅述。
接著分別形成一第一磊晶層40及第二磊晶層42於鰭狀結構28、30、32及虛置鰭狀結構34上，其中第一磊晶層40較佳設於鰭狀結構28、30、32上且位於該閘極結構36、38兩側，第二磊晶層42則較佳完全覆蓋整條虛置鰭狀結構34。在本實施例中，形成第一磊晶層40與第二磊晶層42的方式可先選擇性以蝕刻於閘極結構36、38兩側的鰭狀結構32中形成凹槽(圖未示)或直接修整(trim)磊晶層，然後再以選擇性磊晶成長製程於凹槽中成長出第一磊晶層40，以及於虛置鰭狀結構34表面形成第二磊晶層42。第一磊晶層40及第二磊晶層42的組成可依據所製作之電晶體的型態調整，例如可包含鍺化矽或磷化矽，但不侷限於此。另外需注意的是，形成第一磊晶層40與第二磊晶層42之前或之後又可依據製程需求於閘極結構36、38周圍形成側壁子，以及於閘極結構36、38兩側的鰭狀結構28、30、32中形成輕摻雜汲極與源極/汲極區域等元件。由於形成這些元件的順序與細節均屬本領域所熟知技藝，在此不另加贅述。
之後可進行一金屬矽化物製程，以形成一矽化金屬層44於第一磊晶層40及第二磊晶層42上。然後形成一層間介電層(圖未 示)覆蓋基底12與閘極結構36、38，並接著於層間介電層中形成至少一接觸插塞46電連接矽化金屬層44。至此即完成本發明較佳實施例之一半導體元件的製作。
綜上所述，本發明主要在進行側壁圖案轉移(sidewall image transfer,SIT)技術時，特別是於基底上形成犧牲軸心體後先去除一部份的犧牲軸心體以形成一缺口，然後再形成側壁子於犧牲軸心體之側壁。由於缺口的存在，形成於犧牲軸心體側壁的側壁子會局部內縮而較佳具有一轉折或一曲線，因此後續將側壁子圖案轉移至基底形成鰭狀結構與虛置鰭狀結構時虛置鰭狀結構同樣具有一約略Ω形的曲線。依據本發明之較佳實施例，虛置鰭狀結構之曲線的設計可降低後續成長於鰭狀結構與虛置鰭狀結構上第一磊晶層與第二磊晶層之間的間距甚至使兩者相互接觸，使之後形成的接觸插塞可同時接觸並跨坐在第一磊晶層與第二磊晶層上，如此除了可提升接觸插塞的整體接觸面積外又可進而降低接觸插塞與磊晶層之間的阻值。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。

Claims (12)

  1. 一種製作半導體元件的方法，包含：提供一基底；形成一犧牲軸心體於該基底上，該犧牲軸心體包含一缺口；以及形成一側壁子於該犧牲軸心體旁並直接接觸該犧牲軸心體側壁。
  2. 如申請專利範圍第1項所述之方法，其中該犧牲軸心體包含一第一側邊與具有該缺口之一第二側邊，該方法另包含：形成該側壁子於該第一側邊及該第二側邊旁；去除該犧牲軸心體；以及利用該側壁子去除部分該基底以形成一鰭狀結構以及一虛置鰭狀結構。
  3. 如申請專利範圍第2項所述之方法，其中該虛置鰭狀結構包含一曲線。
  4. 如申請專利範圍第3項所述之方法，其中該曲線包含Ω形。
  5. 如申請專利範圍第1項所述之方法，另包含：進行一鰭狀結構切割製程；形成一閘極結構於該鰭狀結構上；形成一第一磊晶層於該鰭狀結構上且位於該閘極結構兩側以及形成一第二磊晶層於該虛置鰭狀結構上；以及形成一接觸插塞於該第一磊晶層及該第二磊晶層上。
  6. 如申請專利範圍第5項所述之方法，另包含：形成一矽化金屬層於該第一磊晶層及該第二磊晶層上；以及形成該接觸插塞於該矽化金屬層上。
  7. 一種半導體元件，包含：一基底；一鰭狀結構設於該基底上，該鰭狀結構包含一閘極結構設於其上以及一第一磊晶層該閘極結構兩側；一虛置鰭狀結構設於該基底上且鄰近該鰭狀結構，該虛置鰭狀結構包含一第二磊晶層；以及一接觸插塞設於該第一磊晶層及該第二磊晶層上。
  8. 如申請專利範圍第7項所述之半導體元件，另包含：一矽化金屬層設於該第一磊晶層及該第二磊晶層上；以及一接觸插塞設於該矽化金屬層上。
  9. 如申請專利範圍第7項所述之半導體元件，其中該第一磊晶層及該第二磊晶層包含鍺化矽或磷化矽。
  10. 如申請專利範圍第7項所述之半導體元件，其中該第二磊晶層完全覆蓋該虛置鰭狀結構。
  11. 一種半導體元件，包含：一基底；一鰭狀結構設於該基底上；以及一虛置鰭狀結構設於該基底上並鄰近該鰭狀結構，該鰭狀結構以 及該虛置鰭狀結構包含相同材料且該虛置鰭狀結構包含一曲線。
  12. 如申請專利範圍第11項所述之半導體元件，其中該曲線包含Ω形。
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