TWI704690B - 半導體裝置以及其製作方法 - Google Patents

半導體裝置以及其製作方法 Download PDF

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TWI704690B
TWI704690B TW105125890A TW105125890A TWI704690B TW I704690 B TWI704690 B TW I704690B TW 105125890 A TW105125890 A TW 105125890A TW 105125890 A TW105125890 A TW 105125890A TW I704690 B TWI704690 B TW I704690B
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fin
isolation
semiconductor device
isolation structure
gate structure
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TW105125890A
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TW201806159A (zh
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劉恩銓
童宇誠
楊智偉
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聯華電子股份有限公司
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Priority to US15/264,590 priority patent/US10283413B2/en
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Priority to US16/360,019 priority patent/US10460997B2/en
Priority to US16/562,454 priority patent/US10522415B1/en
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Abstract

一種半導體裝置包括半導體基底、隔離結構與間隙子。半導體基底包括至少一鰭狀結構。隔離結構部分設置於鰭狀結構中且部分設置於鰭狀結構上。鰭狀結構包括第一鰭與第二鰭，第一鰭與第二鰭沿同一方向延伸，且部分之隔離結構係於第一鰭與第二鰭所延伸之方向上設置於第一鰭與第二鰭之間。間隙子設置於位於鰭狀結構上之隔離結構的側壁上。本發明之隔離結構部分設置於鰭狀結構中且部分設置於鰭狀結構上，藉此可避免閘極結構形成於隔離結構上而陷入隔離結構中造成對於隔離結構的隔離效果產生負面影響。

Description

半導體裝置以及其製作方法
本發明係關於一種半導體裝置以及其製作方法，尤指一種具有部分設置於鰭狀結構中且部分設置於鰭狀結構上之隔離結構的半導體裝置以及其製作方法。
半導體積體電路之技術隨著時間不斷地進步成長，每個新世代製程下的產品都較前一個世代具有更小且更複雜的電路設計。在各晶片區域上的功能元件因產品革新需求而必須使其數量與密度不斷地提升，當然也就使得各元件幾何尺寸需越來越小。然而，為了使各種不同功能之積體電路元件可正常獨自或/及搭配運作，一些積體電路元件之間必須要有良好的電性隔離設計，用以避免相鄰之元件或部件之間產生不必要之電性耦合或/及電性影響。因此，對於相關技術領域以及相關業界來說，如何於積集度持續提升的要求下設計出可整合於先進製程且有效之電性隔離結構實為非常重要的課題。
本發明提供了一種半導體裝置以及其製作方法，利用形成於鰭狀結構中以及鰭狀結構上之隔離結構對鰭狀結構中的不同區域形成隔離效果。形成 於鰭狀結構上之隔離結構的側壁上形成有間隙子，故可不須於隔離結構上再形成閘極結構，進而可避免閘極結構因為形成於隔離結構上或甚至於陷入於隔離結構中時可能造成對於隔離結構之隔離效果產生的負面影響。
根據本發明之一實施例，本發明提供了一種半導體裝置，包括一半導體基底、一隔離結構以及一間隙子。半導體基底包括至少一鰭狀結構。隔離結構係部分設置於鰭狀結構中且部分設置於鰭狀結構上。鰭狀結構包括一第一鰭以及一第二鰭，第一鰭與第二鰭係沿同一方向延伸，且部分之隔離結構係於第一鰭與第二鰭所延伸之方向上設置於第一鰭與第二鰭之間。間隙子設置於位於鰭狀結構上之隔離結構的側壁上。
根據本發明之一實施例，本發明還提供了一種半導體裝置的製作方法，包括下列步驟。首先，提供一半導體基底，半導體基底包括至少一鰭狀結構。於鰭狀結構上形成一圖案化遮罩層，圖案化遮罩層包括一開口，且開口係於一垂直方向上對應部分之鰭狀結構。以圖案化遮罩層為遮罩進行一蝕刻製程，用以於鰭狀結構中形成一溝槽。對圖案化遮罩層進行一回縮(pullback)製程，用以放大圖案化遮罩層之開口。於溝槽中以及圖案化遮罩層之被放大之開口中形成一隔離結構。
在本發明之半導體裝置以及其製作方法中，係利用回縮製程將用以於鰭狀結構中形成溝槽之圖案化遮罩層的開口放大，並於放大之開口以及溝槽中形成隔離結構。因此，在隔離結構中，形成於溝槽中(也就是形成於鰭狀結構中)的部分可與形成於鰭狀結構上的部分之間產生自對準(self-aligned)的效果，藉此可確保形成所需之部分形成於鰭狀結構中且部分形成於鰭狀結構上的隔離結 構。
10:半導體基底
10F:鰭狀結構
20:淺溝隔離結構
21:第一墊層
22:第二墊層
30:圖案化遮罩層
40:隔離材料層
40S:隔離結構
50:閘極結構
51:第一閘極結構
52:第二閘極結構
53:第三閘極結構
60:間隙子材料層
60S:間隙子
70:源極/汲極區
80:層間介電層
91:蝕刻製程
92:回縮製程
100:半導體裝置
D1:第一方向
D2:第二方向
D3:垂直方向
F1:第一鰭
F2:第二鰭
H:開口
H':被放大之開口
P1:第一部
P2:第二部
SW1:側壁
SW2:側壁
T1:第一半導體元件
T2:第二半導體元件
TR:溝槽
TS:上表面
W1:寬度
W2:寬度
第1圖至第11圖所繪示為本發明一實施例之半導體裝置的製作方法示意圖，其中第2圖為沿第1圖中剖線A-A’所繪示之剖視示意圖；第3圖與繪示了第2圖之後的製作方法示意圖；第4圖與繪示了第3圖之後的製作方法示意圖；第5圖與繪示了第4圖之後的製作方法示意圖；第6圖與繪示了第5圖之後的製作方法示意圖；第7圖與繪示了第6圖之後的製作方法示意圖；第8圖與第9圖與繪示了第7圖之後的製作方法示意圖；第8圖為沿第9圖中剖線B-B’所繪示之剖視示意圖；第10圖與第11圖與繪示了第8圖與第9圖之後的製作方法示意圖；第10圖為沿第11圖中剖線C-C’所繪示之剖視示意圖。
請參閱第1圖至第11圖。第1圖至第11圖所繪示為本發明一實施例之半導體裝置的製作方法示意圖，其中第1圖、第9圖以及第11圖為上視示意圖，第2圖至第8圖以及第10圖為剖視示意圖，第2圖為沿第1圖中剖線A-A’所繪示之剖視示意圖，第8圖為沿第9圖中剖線B-B’所繪示之剖視示意圖，而第10圖為沿第11圖中剖線C-C’所繪示之剖視示意圖。本實施例之半導體裝置的製作方法包括下列步驟。如第1圖與第2圖所示，提供一半導體基底10，本實施例之半導體基底10可包括矽基底、磊晶矽基底、矽鍺基底、碳化矽基底或絕緣層覆矽 (silicon-on-insulator，SOI)基底，但並不以此為限。半導體基底10包括至少一鰭狀結構10F，而鰭狀結構10F可包括一半導體材料之鰭狀結構。在本實施例中，半導體基底10可包括複數個鰭狀結構10F，各鰭狀結構10F係沿一第一方向D1延伸，且多個鰭狀結構10F可沿一第二方向D2重複排列。第一方向D1可大體上與第二方向D2正交，但並不以此為限。鰭狀結構10F可經由對半導體基底10進行圖案化製程(例如多重曝光製程)而形成，而鰭狀結構10F之間可經由淺溝隔離結構20隔開。淺溝隔離結構20可包括單層或多層之絕緣材料例如氧化物絕緣材料，但並不以此為限。
然後，於鰭狀結構10F上形成一圖案化遮罩層30，圖案化遮罩層30包括一開口H，且開口H係於一垂直方向D3上對應部分之鰭狀結構10F。在本發明之一些實施例中，在對半導體基底10進行圖案化製程以形成鰭狀結構10F之前，可選擇性地於於半導體基底10上形成一第一墊層21，而於鰭狀結構10F與淺溝隔離結構20形成之後以及圖案化遮罩層30形成之前可選擇性地於於第一墊層21以及淺溝隔離結構20上形成一第二墊層22。第一墊層21與第二墊層22可分別由絕緣材料例如氧化物絕緣材料所形成，用以於其他製程進行時達到保護的效果。然而，在一些實施例中，亦可不形成上述之第一墊層21與第二墊層22，故圖案化遮罩層30之開口H可直接暴露出鰭狀結構10F的一部分。換句話說，不論有無形成上述之第一墊層21與第二墊層22，圖案化遮罩層30之開口H係於垂直方向D3上對應鰭狀結構10F的一部分，用以搭配後續之蝕刻製程而在鰭狀結構10F中形成溝槽。在一些實施例中，圖案化遮罩層30之開口H可沿第二方向D2延伸而對應多個鰭狀結構10F，但並不以此為限。圖案化遮罩層30的材料可包括氮化矽或其他適合之絕緣材料，而圖案化遮罩層30可藉由微影蝕刻製程、光圖案化(photo patterning)製程或其他適合之方式形成。
如第3圖所示，接著以圖案化遮罩層30為遮罩進行一蝕刻製程91，用以移除部分之被開口H對應之鰭狀結構10F(亦可視為對未被圖案化遮罩層30覆蓋之鰭狀結構10F進行蝕刻)，而於鰭狀結構10F中形成一溝槽TR。溝槽TR的深度較佳係等於或較淺於淺溝隔離結構20的深度，也就是說溝槽TR的最下表面較佳係比淺溝隔離結構20的最下表面高或者是兩者大體上等高，但並不以此為限。此外，蝕刻製程91可包括單個或多個製程條件不同之蝕刻步驟，分別用以對第一墊層21、第二墊層22以及鰭狀結構10F進行蝕刻，而蝕刻製程91較佳可包括非等向性(anisotropic)蝕刻製程例如非等向性之乾式蝕刻製程，用以形成具有較高深寬比的溝槽TR，但並不以此為限。此外，各鰭狀結構10F係被溝槽TR分割而劃分成一第一鰭F1以及一第二鰭F2，第一鰭F1與第二鰭F2係沿同一方向延伸，而溝槽TR係位於同一個鰭狀結構10F之第一鰭F1與第二鰭F2之間。
然後，如第3圖至第4圖所示，對圖案化遮罩層30進行一回縮(pullback)製程92，用以放大圖案化遮罩層30之開口H而形成一被放大之開口H’。在一些實施例中，回縮製程92可包括一濕式蝕刻製程或其他對於圖案化遮罩層30以及其他材料層之間具有較高蝕刻選擇比之製程，用以蝕刻圖案化遮罩層30而放大圖案化遮罩層30之開口H而避免對於已形成之溝槽TR在形狀及大小上造成影響。此外，藉由上述之回縮製程92，可使得被放大之開口H’的寬度W2大於溝槽TR的寬度W1，且放大之開口H’可與溝槽TR以自對準(self-aligned)的方式形成。在本發明之一些實施例中，亦可利用其他方式(例如再進行一微影蝕刻製程)來形成放大之開口，但所形成之開口與溝槽TR之間的對準狀況可能會有較大的變異。
之後，如第5圖所示，於溝槽TR中以及圖案化遮罩層30之被放大之開 口H’中形成一隔離結構40S。隔離結構40S的形成方式可包括但不限於下列之步驟。首先，可於溝槽TR中、圖案化遮罩層30之被放大之開口H’中以及圖案化遮罩層30上形成一隔離材料層40，隔離材料層40係填滿溝槽TR以及被放大之開口H’。然後，進行一平坦化製程，用以移除位於圖案化遮罩層30上的隔離材料層40而形成隔離結構40S。由於隔離結構40S係藉由於溝槽TR以及被放大之開口H’中填入隔離材料層40而形成，故隔離結構40S可包括形成於鰭狀結構10F中(也就是形成於溝槽TR中)的第一部P1以及形成於第一部P1上以及鰭狀結構10F上的第二部P2，且第二部P2係與第一部P1直接連接。上述之隔離材料層40可包括絕緣材料例如氧化物絕緣材料或其他適合之絕緣材料，且隔離材料層40可藉由例如可流動式化學氣相沉積(flowable chemical vapor deposition，FCVD)方式形成，藉以確保隔離材料層40有效填入溝槽TR以及被放大之開口H’中的狀況，但並不以此為限。此外，若使用FCVD方式形成隔離材料層40時，可再搭配一退火製程來形成隔離結構40S。在藉由上述方式所形成之隔離結構40S中，第一部P1的寬度會小於第二部P2之寬度，且由於第二部P2與第一部P1亦可被視為以自對準的方式形成，故第一部P1係形成於第一鰭F1與第二鰭F2之間，且第二部P2係同時形成於第一鰭F1以及第二鰭F2上。此外，值得說明的是，由於隔離結構40S可藉由於溝槽TR以及被放大之開口H’中填入隔離材料層40而形成，故可藉由控制圖案化遮罩層30的厚度來形成所需之隔離結構40S之第二部P2的高度狀況。
然後，如第5圖至第7圖所示，將圖案化遮罩層30移除，並可利用例如一掘入(recessing)製程移除部分之淺溝隔離結構20、第一墊層21以及第二墊層22，使得各鰭狀結構10F的側表面以及部分之上表面TS被暴露出來。在上述之掘入製程之後，位於各鰭狀結構10F之間的淺溝隔離結構20之上表面係低於各鰭狀結構10F之上表面TS，而隔離結構40S之上表面則係高於各鰭狀結構10F之上表面 TS。此外，部分之第一墊層21與第二墊層22在上述之掘入製程之後可保留於隔離結構40S之第二部P2與第一鰭F1之間以及隔離結構40S之第二部P2與第二鰭F2之間。
如第8圖與第9圖所示，之後可形成至少一閘極結構50，而閘極結構50係跨過鰭狀結構10F設置。舉例來說，閘極結構50可沿第二方向D2延伸而與複數個鰭狀結構10F交錯且跨過複數個鰭狀結構10F。因此，閘極結構50可接觸所跨過之鰭狀結構10F的上表面以及兩個側表面，但並不以此為限。此外，在一些實施例中，可形成複數個閘極結構50彼此互相分離且互相平行，而隔離結構40S亦可與閘極結構50彼此互相平行設置，但並不以此為限。舉例來說，上述之複數個閘極結構50可包括第一閘極結構51、第二閘極結構52以及第三閘極結構53彼此互相分離且平行設置。第一閘極結構51係形成且跨過複數個第一鰭F1，第二閘極結構52係形成且跨過複數個第二鰭F2，隔離結構40S則係位於第一閘極結構51與第二閘極結構52之間，且隔離結構40S之第二部P2係於垂直方向D3上覆蓋多個第一鰭F1的一端以及多個第二鰭F2的一端。此外，第三閘極結構53可形成於各第一鰭F1於第一方向D1上相對於隔離結構40S之另一端，或形成於各第二鰭F2於第一方向D1上相對於隔離結構40S之另一端，而第三閘極結構53可視為一虛置閘極(dummy gate)結構，但並不以此為限。在一些實施例中，第一閘極結構51與第二閘極結構52可分別為不同之鰭式半導體元件的閘極，故第一閘極結構51與第二閘極結構52可包括導電材料，但並不以此為限。然而，在一些實施例中，第一閘極結構51、第二閘極結構52以及第三閘極結構53可均為用以於後續進行取代金屬閘極(replacement metal gate，RMG)製程之虛置閘極結構，故第一閘極結構51、第二閘極結構52以及第三閘極結構53的材料亦可包括例如多晶矽、非晶矽等半導體材料，但並不以此為限。
接著，如第10圖與第11圖所示，於位於鰭狀結構10F上之隔離結構40S之第二部P2的側壁SW1上以及閘極結構50之側壁SW2上形成一間隙子60S。間隙子60S的形成方式可包括但不限於下列的步驟。例如，可先於閘極結構50、隔離結構40S以及鰭狀結構10F的表面上共形地(conformally)形成一間隙子材料層60，然後再藉由一非等向性蝕刻製程移除部分之間隙子材料層60而於隔離結構40S之第二部P2的側壁SW1以及閘極結構50之側壁SW2上形成間隙子60S。間隙子材料層60可包括氧化物、氮化物、氮氧化物或其他適合之絕緣材料，而間隙子60S亦可由單層或多層之間隙子材料層所形成。接著，可於鰭狀結構10F中形成複數個源極/汲極區70，而各源極/汲極區70係至少部分形成於鰭狀結構10F中。舉例來說，各源極/汲極區70可包括磊晶結構而向上延伸超過鰭狀結構10F之上表面TS，但並不以此為限。此外，部分之源極/汲極區70可於第一方向D1上設置於第一閘極結構51的兩側，且另一部分之源極/汲極區70可於第一方向D1上設置於第二閘極結構52的兩側。因此，部分之源極/汲極區70可形成於位於閘極結構50與隔離結構40S之間的鰭狀結構10F中，且可同時接觸位於隔離結構40S之第二部P2的側壁SW1上的間隙子60S以及位於閘極結構50之側壁SW2上的間隙子60S，但並不以此為限。
於形成源極/汲極區70之後，可再形成一層間介電層80覆蓋隔離結構40S以及源極/汲極區70，而層間介電層80可未覆蓋閘極結構50之上表面，藉此可對閘極結構50進行取代金屬閘極製程而於閘極結構50的所在處形成金屬閘極結構(未圖示)。換句話說，在進行取代金屬閘極製程時，層間介電層80係覆蓋隔離結構40S，而由於隔離結構40S之第二部P2已位於鰭狀結構10F之上表面TS之上而可用以形成側壁子60S而用於後續之源極/汲極區70的製程中，故隔離結構40S上 可不需形成閘極結構50，藉此避免閘極結構50對於隔離結構40S之隔離效果產生負面影響。舉例來說，當隔離結構40S僅具有位於鰭狀結構10F中的第一部P1而未具有位於鰭狀結構10F上之第二部P2時，需於第一部P1上形成閘極結構以及於此閘極結構之側壁上形成間隙子以進行後續之源極/汲極區70的製程。然而，當閘極結構形成於隔離結構上或甚至於部分陷入於隔離結構中時，可能會造成對於隔離結構之隔離效果產生負面影響。換句話說，藉由本發明之部分形成於鰭狀結構10F中以及部分形成於鰭狀結構10F上之隔離結構40S，可不須於隔離結構40S上再形成閘極結構，進而可確保隔離結構40S對於第一鰭F1以及第二鰭F2之間所形成之隔離效果。
經由上述之製作方法，即可形成如第10圖與第11圖所示之半導體裝置100。半導體裝置100包括半導體基底10、隔離結構40S以及間隙子60S。半導體基底10包括至少一鰭狀結構10F。隔離結構40S係部分設置於鰭狀結構10F中且部分設置於鰭狀結構10F上。鰭狀結構10F包括第一鰭F1以及第二鰭F2，第一鰭F1與第二鰭F2係沿同一方向(例如第11圖中所示之第一方向D1)延伸，且部分之隔離結構40S係於第一鰭F1與第二鰭F2所延伸之方向上設置於第一鰭F1與第二鰭F2之間。間隙子60S設置於位於鰭狀結構10F上之隔離結構40S的側壁SW1上。
此外，半導體裝置100可更包括複數個閘極結構50例如第一閘極結構51、第二閘極結構52以及第三閘極結構53分別沿第二方向延伸設置。閘極結構50之上表面較佳係於垂直方向D3上高於隔離結構40S之上表面或與隔離結構40S之上表面齊平，但並不以此為限。第一閘極結構51係設置於第一鰭F1上且跨過第一鰭F1，第二閘極結構52係設置於第二鰭F2上且跨過第二鰭F2，而隔離結構40S係於第一方向D1上設置於第一閘極結構51與第二閘極結構52之間，且隔離結 構40S、第一閘極結構51、第二閘極結構52以及第三閘極結構53可彼此互向平行設置。各閘極結構50可包括一閘極介電層(未圖示)設置於靠近鰭狀結構10F的一側。此外，間隙子60S可更設置於第一閘極結構51之側壁上以及第二閘極結構52之側壁上，而半導體裝置100可更包括複數個源極/汲極區70，各源極/汲極區70係至少部分設置於鰭狀結構10F中，部分之源極/汲極區70係於第一鰭F1與第二鰭F2所延伸之方向(例如第11圖所示之第一方向D1)上設置於第一閘極結構51的兩側，且另一部分之源極/汲極區70係於第一鰭F1與第二鰭F2所延伸之方向上設置於第二閘極結構52的兩側。部分之源極/汲極區70係於第一鰭F1與第二鰭F2所延伸之方向上設置於隔離結構40S與第一閘極結構51之間，或設置於隔離結構40S與第二閘極結構52之間。
在一些實施例中，第一閘極結構51(或者以取代金屬閘極製程於第一閘極結構51所在處形成之金屬閘極結構)、第一鰭F1以及設置於第一閘極結構51兩側之第一鰭F1中的源極/汲極區70可形成一第一半導體元件T1，而第二閘極結構52(或者以取代金屬閘極製程於第二閘極結構52所在處形成之金屬閘極結構)、第二鰭F2以及設置於第二閘極結構52兩側之第二鰭F2中的源極/汲極區70可形成一第二半導體元件T2。在此狀況下，隔離結構40S係位於第一半導體元件T1與第二半導體元件T2之間並提供隔離效果。由於隔離結構40S可藉由例如上述第2圖至第6圖所示之方法形成，故隔離結構40S可包括第一部P1與第二部P2，第一部P1係設置於鰭狀結構10F中，而第二部P2係設置於第一部P1上以及鰭狀結構10F上。第二部P2係與第一部P1直接連接，且間隙子60S係設置於隔離結構40S之第二部P2的側壁SW1上。隔離結構40S之第二部P2係同時於垂直方向D3上設置於第一鰭F1以及第二鰭F2上。在一些實施例中，隔離結構40S之第一部P1可被一襯層(liner，未圖示)圍繞，而隔離結構40S之第二部P2可直接接觸間隙子60S，但 並不以此為限。
在半導體裝置100之一剖視圖(例如第10圖)中，隔離結構40S可包括一T字型結構，且隔離結構40S可被視為單一擴散阻斷(single diffusion break，SDB)結構，但並不以此為限。此外，半導體裝置100可更包括層間介電層80，且層間介電層80係直接設置於隔離結構40S上，而第10圖所示之半導體裝置100可為進行取代金屬閘極製程而於閘極結構50所在處形成金屬閘極結構之前的狀態，但並不以此為限。在一些實施例中，半導體裝置100中的第一閘極結構51與第二閘極結構52可分別為第一半導體元件T1與第二半導體元件T2之閘極，故半導體裝置100可被視為具有複數個鰭式半導體元件之半導體裝置。
綜上所述，在本發明之半導體裝置以及其製作方法中，係利用回縮製程將用以於鰭狀結構中形成溝槽之圖案化遮罩層的開口放大，並於放大之開口以及溝槽中形成隔離結構。因此，形成於鰭狀結構中之隔離結構的第一部可與形成於鰭狀結構上之隔離結構的第二部之間產生自對準的效果，藉此可確保形成所需之部分形成於鰭狀結構中且部分形成於鰭狀結構上的隔離結構。此外，藉由本發明之隔離結構，可不須於隔離結構上再形成閘極結構，進而可確保隔離結構所形成之隔離效果，避免於隔離結構上形成閘極結構時所可能造成的負面影響。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
10:半導體基底
10F:鰭狀結構
20:淺溝隔離結構
21:第一墊層
22:第二墊層
40S:隔離結構
50:閘極結構
60:間隙子材料層
60S:間隙子
70:源極/汲極區
80:層間介電層
100:半導體裝置
D3:垂直方向
F1:第一鰭
F2:第二鰭
P1:第一部
P2:第二部
SW1:側壁
SW2:側壁
TR:溝槽
TS:上表面

Claims (16)

  1. 一種半導體裝置，包括：一半導體基底，其中該半導體基底包括至少一鰭狀結構；一隔離結構，該隔離結構係部分設置於該鰭狀結構中且部分設置於該鰭狀結構上，其中該鰭狀結構包括一第一鰭以及一第二鰭，該第一鰭與該第二鰭係沿同一方向延伸，且部分之該隔離結構係於該第一鰭與該第二鰭所延伸之方向上設置於該第一鰭與該第二鰭之間；一間隙子，設置於位於該鰭狀結構上之該隔離結構的側壁上；一層間介電層，直接設置於該隔離結構上；一第一閘極結構，設置於該第一鰭上且跨過該第一鰭；以及一第二閘極結構，設置於該第二鰭上且跨過該第二鰭，其中該隔離結構係設置於該第一閘極結構與該第二閘極結構之間，且該層間介電層未覆蓋該第一閘極結構之上表面與該第二閘極結構之上表面。
  2. 如請求項1所述之半導體裝置，其中該隔離結構包括：一第一部，設置於該鰭狀結構中；以及一第二部，設置於該第一部上以及該鰭狀結構上，其中該第二部係與該第一部直接連接，且該間隙子係設置於該隔離結構之該第二部的側壁上。
  3. 如請求項2所述之半導體裝置，其中該隔離結構之該第二部係設置於該第一鰭以及該第二鰭上。
  4. 如請求項1所述之半導體裝置，其中於該半導體裝置之一剖視圖中，該隔離結構包括一T字型結構。
  5. 如請求項1所述之半導體裝置，其中該隔離結構、該第一閘極結構以及該第二閘極結構係彼此互向平行。
  6. 如請求項1所述之半導體裝置，其中該間隙子更設置於該第一閘極結構之側壁上以及該第二閘極結構之側壁上。
  7. 如請求項1所述之半導體裝置，更包括：複數個源極/汲極區，其中各該源極/汲極區係至少部分設置於該鰭狀結構中，部分之該等源極/汲極區係於該第一鰭與該第二鰭所延伸之該方向上設置於該第一閘極結構的兩側，且另一部分之該等源極/汲極區係於該第一鰭與該第二鰭所延伸之該方向上設置於該第二閘極結構的兩側。
  8. 如請求項7所述之半導體裝置，其中部分之該等源極/汲極區係於該第一鰭與該第二鰭所延伸之該方向上設置於該隔離結構與該第一閘極結構之間，或設置於該隔離結構與該第二閘極結構之間。
  9. 一種半導體裝置的製作方法，包括：提供一半導體基底，其中該半導體基底包括至少一鰭狀結構；於該鰭狀結構上形成一圖案化遮罩層，其中該圖案化遮罩層包括一開口，且該開口係於一垂直方向上對應部分之該鰭狀結構；以該圖案化遮罩層為遮罩進行一蝕刻製程，用以於該鰭狀結構中形成一溝槽；對該圖案化遮罩層進行一回縮(pullback)製程，用以放大該圖案化遮罩層之該開口； 於該溝槽中以及該圖案化遮罩層之被放大之該開口中形成一隔離結構，其中該隔離結構包括：一第一部，形成於該鰭狀結構中；以及一第二部，形成於該第一部上以及該鰭狀結構上，其中該第二部係與該第一部直接連接；以及於該隔離結構形成之後，於位於該鰭狀結構上之該隔離結構之該第二部的側壁上形成一間隙子。
  10. 如請求項9所述之半導體裝置的製作方法，其中形成該隔離結構的步驟包括：於該溝槽中、該圖案化遮罩層之被放大之該開口中以及該圖案化遮罩層上形成一隔離材料層，其中該隔離材料層係填滿該溝槽以及被放大之該開口；以及進行一平坦化製程，用以移除位於該圖案化遮罩層上的隔離材料層。
  11. 如請求項9所述之半導體裝置的製作方法，其中該鰭狀結構係被該溝槽劃分成一第一鰭以及一第二鰭，該第一鰭與該第二鰭係沿同一方向延伸，且該隔離結構之該第一部係形成於該第一鰭與該第二鰭之間。
  12. 如請求項11所述之半導體裝置的製作方法，其中該隔離結構之該第二部係形成於該第一鰭以及該第二鰭上。
  13. 如請求項9所述之半導體裝置的製作方法，更包括：形成至少一閘極結構跨過該鰭狀結構，其中該間隙子更形成於該閘極結構之 側壁上。
  14. 如請求項13所述之半導體裝置的製作方法，其中該閘極結構與該隔離結構係彼此互相平行。
  15. 如請求項13所述之半導體裝置的製作方法，更包括：於位於該閘極結構與該隔離結構之間的該鰭狀結構中形成一源極/汲極區。
  16. 如請求項9所述之半導體裝置的製作方法，其中該回縮製程包括一濕式蝕刻製程，用以蝕刻該圖案化遮罩層而放大該圖案化遮罩層之該開口。
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