CN111868928B - 基于双晶体管鳍式场效晶体管的分裂栅极非易失性浮动栅极闪存存储器及其制造方法 - Google Patents

基于双晶体管鳍式场效晶体管的分裂栅极非易失性浮动栅极闪存存储器及其制造方法 Download PDF

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CN111868928B
CN111868928B CN201980020126.6A CN201980020126A CN111868928B CN 111868928 B CN111868928 B CN 111868928B CN 201980020126 A CN201980020126 A CN 201980020126A CN 111868928 B CN111868928 B CN 111868928B
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fin
gate
floating gate
insulated
memory cell
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CN111868928A (zh
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S·乔尔巴
C·德科贝尔特
Z·冯
J·金
X·刘
N·多
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Silicon Storage Technology Inc
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Silicon Storage Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CN201980020126.6A 2018-03-22 2019-01-23 基于双晶体管鳍式场效晶体管的分裂栅极非易失性浮动栅极闪存存储器及其制造方法 Active CN111868928B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/933,124 2018-03-22
US15/933,124 US10312247B1 (en) 2018-03-22 2018-03-22 Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication
PCT/US2019/014816 WO2019182681A2 (en) 2018-03-22 2019-01-23 Two transistor finfet-based split gate non-volatile floating gate flash memory and method of fabrication

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CN111868928A CN111868928A (zh) 2020-10-30
CN111868928B true CN111868928B (zh) 2024-09-06

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US (1) US10312247B1 (https=)
EP (1) EP3769338B1 (https=)
JP (1) JP7372932B2 (https=)
KR (1) KR102350218B1 (https=)
CN (1) CN111868928B (https=)
TW (1) TWI693698B (https=)
WO (1) WO2019182681A2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854074B (zh) * 2019-11-27 2023-08-25 上海华力微电子有限公司 改善2d-nand侧墙倾斜的方法
US20210193671A1 (en) 2019-12-20 2021-06-24 Silicon Storage Technology, Inc. Method Of Forming A Device With Split Gate Non-volatile Memory Cells, HV Devices Having Planar Channel Regions And FINFET Logic Devices
US11114451B1 (en) 2020-02-27 2021-09-07 Silicon Storage Technology, Inc. Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices
US11362100B2 (en) * 2020-03-24 2022-06-14 Silicon Storage Technology, Inc. FinFET split gate non-volatile memory cells with enhanced floating gate to floating gate capacitive coupling
CN111415937B (zh) * 2020-05-13 2023-04-25 上海华虹宏力半导体制造有限公司 存储器及其形成方法
CN114256251B (zh) 2020-09-21 2025-05-13 硅存储技术股份有限公司 形成具有存储器单元、高压器件和逻辑器件的设备的方法
CN114446972B (zh) * 2020-10-30 2025-09-05 硅存储技术股份有限公司 具有鳍式场效应晶体管结构的分裂栅非易失性存储器单元、hv和逻辑器件及其制造方法
TWI766609B (zh) 2021-03-10 2022-06-01 華邦電子股份有限公司 半導體記憶體結構
US12453136B2 (en) * 2022-03-08 2025-10-21 Silicon Storage Technology, Inc. Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate
WO2023172279A1 (en) * 2022-03-08 2023-09-14 Silicon Storage Technology, Inc. Method of forming a device with planar split gate non-volatile memory cells, planar hv devices, and finfet logic devices on a substrate
CN119451108A (zh) * 2023-07-28 2025-02-14 中芯国际集成电路制造(北京)有限公司 半导体结构及其形成方法
CN117596878B (zh) * 2024-01-15 2024-04-09 上海朔集半导体科技有限公司 一种u型的浮栅型分栅嵌入式非挥发存储器及其制造方法
WO2025155320A1 (en) 2024-01-16 2025-07-24 Silicon Storage Technology, Inc. Vertically oriented split gate non-volatile memory cells, and method of making same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201804604A (zh) * 2016-05-24 2018-02-01 超捷公司 集成鰭式場效電晶體(finfet) cmos裝置與嵌入式非揮發性記憶體單元之方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029130A (en) 1990-01-22 1991-07-02 Silicon Storage Technology, Inc. Single transistor non-valatile electrically alterable semiconductor memory device
US6747310B2 (en) 2002-10-07 2004-06-08 Actrans System Inc. Flash memory cells with separated self-aligned select and erase gates, and process of fabrication
US20050012137A1 (en) * 2003-07-18 2005-01-20 Amitay Levi Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing
US7315056B2 (en) 2004-06-07 2008-01-01 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with program/erase and select gates
US7423310B2 (en) 2004-09-29 2008-09-09 Infineon Technologies Ag Charge-trapping memory cell and charge-trapping memory device
KR100652384B1 (ko) * 2004-11-08 2006-12-06 삼성전자주식회사 2비트 형태의 불휘발성 메모리소자 및 그 제조방법
KR101100428B1 (ko) 2005-09-23 2011-12-30 삼성전자주식회사 ＳＲＯ(Ｓｉｌｉｃｏｎ Ｒｉｃｈ Ｏｘｉｄｅ) 및 이를적용한 반도체 소자의 제조방법
WO2007036874A1 (en) * 2005-09-28 2007-04-05 Nxp B.V. Finfet-based non-volatile memory device
KR100663366B1 (ko) * 2005-10-26 2007-01-02 삼성전자주식회사 자기 정렬된 부유게이트를 갖는 플래시메모리소자의제조방법 및 관련된 소자
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US20090039410A1 (en) 2007-08-06 2009-02-12 Xian Liu Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing
KR20090017041A (ko) 2007-08-13 2009-02-18 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US8068370B2 (en) * 2008-04-18 2011-11-29 Macronix International Co., Ltd. Floating gate memory device with interpoly charge trapping structure
WO2010082328A1 (ja) * 2009-01-15 2010-07-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2011003742A (ja) * 2009-06-18 2011-01-06 Toshiba Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法
US8461640B2 (en) 2009-09-08 2013-06-11 Silicon Storage Technology, Inc. FIN-FET non-volatile memory cell, and an array and method of manufacturing
US8785273B2 (en) * 2012-04-11 2014-07-22 International Business Machines Corporation FinFET non-volatile memory and method of fabrication
US9406689B2 (en) * 2013-07-31 2016-08-02 Qualcomm Incorporated Logic finFET high-K/conductive gate embedded multiple time programmable flash memory
US9305930B2 (en) * 2013-12-11 2016-04-05 Globalfoundries Inc. Finfet crosspoint flash memory
US9171855B2 (en) 2013-12-30 2015-10-27 Globalfoundries Singapore Pte. Ltd. Three-dimensional non-volatile memory
US9614048B2 (en) * 2014-06-17 2017-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. Split gate flash memory structure and method of making the split gate flash memory structure
US9312268B2 (en) * 2014-09-02 2016-04-12 Globalfoundries Singapore Pte. Ltd. Integrated circuits with FinFET nonvolatile memory
US9276005B1 (en) 2014-12-04 2016-03-01 Silicon Storage Technology, Inc. Non-volatile memory array with concurrently formed low and high voltage logic devices
US9276006B1 (en) 2015-01-05 2016-03-01 Silicon Storage Technology, Inc. Split gate non-volatile flash memory cell having metal-enhanced gates and method of making same
US9634018B2 (en) * 2015-03-17 2017-04-25 Silicon Storage Technology, Inc. Split gate non-volatile memory cell with 3D finFET structure, and method of making same
WO2016194211A1 (ja) * 2015-06-04 2016-12-08 株式会社 東芝 半導体記憶装置及びその製造方法
JP6578172B2 (ja) * 2015-09-18 2019-09-18 ルネサスエレクトロニクス株式会社 半導体装置
US10141321B2 (en) * 2015-10-21 2018-11-27 Silicon Storage Technology, Inc. Method of forming flash memory with separate wordline and erase gates
KR102056995B1 (ko) 2015-11-03 2019-12-17 실리콘 스토리지 테크놀로지 인크 금속 게이트들을 갖는 분리형 게이트 비휘발성 플래시 메모리 셀 및 이를 제조하는 방법
US9842848B2 (en) * 2015-12-14 2017-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded HKMG non-volatile memory
US9666589B1 (en) * 2016-03-21 2017-05-30 Globalfoundries Inc. FinFET based flash memory cell
US9837425B2 (en) * 2016-04-19 2017-12-05 United Microelectronics Corp. Semiconductor device with split gate flash memory cell structure and method of manufacturing the same
JP6652451B2 (ja) * 2016-06-14 2020-02-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9911867B2 (en) * 2016-07-01 2018-03-06 Globalfoundries Singapore Pte. Ltd. Fin-based nonvolatile memory structures, integrated circuits with such structures, and methods for fabricating same
CN107799471B (zh) * 2016-09-05 2020-04-10 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201804604A (zh) * 2016-05-24 2018-02-01 超捷公司 集成鰭式場效電晶體(finfet) cmos裝置與嵌入式非揮發性記憶體單元之方法

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JP7372932B2 (ja) 2023-11-01
TW202006927A (zh) 2020-02-01
WO2019182681A8 (en) 2020-10-01
WO2019182681A3 (en) 2020-04-30
TWI693698B (zh) 2020-05-11
US10312247B1 (en) 2019-06-04
KR20200111789A (ko) 2020-09-29
EP3769338A4 (en) 2021-12-22
EP3769338A2 (en) 2021-01-27
WO2019182681A2 (en) 2019-09-26
EP3769338B1 (en) 2023-03-29
JP2021518670A (ja) 2021-08-02
CN111868928A (zh) 2020-10-30
KR102350218B1 (ko) 2022-01-11

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