JP2020521340A - 多層セラミック基板及びその製造方法 - Google Patents
多層セラミック基板及びその製造方法 Download PDFInfo
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- JP2020521340A JP2020521340A JP2020514483A JP2020514483A JP2020521340A JP 2020521340 A JP2020521340 A JP 2020521340A JP 2020514483 A JP2020514483 A JP 2020514483A JP 2020514483 A JP2020514483 A JP 2020514483A JP 2020521340 A JP2020521340 A JP 2020521340A
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- ceramic thin
- thin plates
- ceramic
- thin plate
- ceramic substrate
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- 239000000919 ceramic Substances 0.000 title claims abstract description 496
- 239000000758 substrate Substances 0.000 title claims abstract description 147
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 57
- 238000010304 firing Methods 0.000 claims abstract description 51
- 239000007767 bonding agent Substances 0.000 claims abstract description 34
- 238000011049 filling Methods 0.000 claims abstract description 13
- 238000007639 printing Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract description 18
- 239000000523 sample Substances 0.000 description 80
- 239000000463 material Substances 0.000 description 28
- 229910000679 solder Inorganic materials 0.000 description 17
- 230000007547 defect Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000002788 crimping Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910011255 B2O3 Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 235000020016 small beer Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4679—Aligning added circuit layers or via connections relative to previous circuit layers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62222—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
- C04B37/005—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of glass or ceramic material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2889—Interfaces, e.g. between probe and tester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4605—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated made from inorganic insulating material
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- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
- C04B2235/9623—Ceramic setters properties
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
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- C04B2237/04—Ceramic interlayers
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
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- H05K1/02—Details
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- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
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- H05K2201/09—Shape and layout
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- H05K3/46—Manufacturing multilayer circuits
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Abstract
Description
まず、本明細書で使用される用語は、以下のように定義される。
セラミック材料は、熱処理工程を経て得られる非金属無機材料を意味する。セラミックは、セラミックスと命名され得る。
熱処理は、物質の性質が変わらない範囲内で物質の本来の機能を付与するために加熱することをいう。
導電性ペーストは、流動性のある樹脂溶液に導体粉末、バインダーなどが分散された状態の複合材料を意味する。
エッチングは、化学薬品を使用して金属、セラミックス、半導体などの表面を腐食させることを意味する。
セラミック薄板及びその製造方法
図1を参照して、本発明の一実施例に係るセラミック薄板及びその製造方法について説明する。
図1は、本発明の一実施例に係るセラミック薄板の製造方法を示した図である。
多層セラミック基板及びその製造方法
図2を参照して、本発明の一実施例に係る多層セラミック基板及びその製造方法を説明する。
図2は、本発明の一実施例に係る多層セラミック基板の製造方法を示した図である。
図3及び図4を参照して、本発明の他の一実施例に係る多層セラミック基板及びその製造方法を説明する。
図3は、本発明の他の一実施例に係る多層セラミック基板の製造方法を示した図である。
図4は、図3の実施例により製造された多層セラミック基板の構成を示した図である。
図5を参照して、本発明の他の一実施例に係る多層セラミック基板及びその製造方法を説明する。
図5は、本発明の他の一実施例に係る多層セラミック基板の製造方法を示した図である。
前記(1)、(2)、(5)、(6)及び(7)段階についての説明は、図3に係る実施例の該当段階に対する説明で代替する。
図6を参照して、本発明の他の一実施例に係る多層セラミック基板及びその製造方法を説明する。
図6は、本発明の他の一実施例に係る多層セラミック基板の製造方法を示した図である。
本発明の一実施例に係る多層セラミック基板の製造方法は、以下の段階を含む。
図7は、図5または図6の実施例により製造された多層セラミック基板の構成を示した図である。
前記多層セラミック基板の製造方法についての詳細な説明は、図5及び図6で前述した。
層別素材が異なる多層セラミック基板及びその製造方法
図8及び図9を参照して、本発明の一実施例に係る多層セラミック基板及びその製造方法を説明する。
図8は、本発明の一実施例に係る多層セラミック基板の製造方法を示した図である。
前記(1)、(3)〜(8)段階についての説明は、図3による実施例の該当段階についての説明で代替する。
図9は、図8の実施例により製造された多層セラミック基板の構成を示した図である。
前記多層セラミック基板の製造方法についての詳細な説明は、図8で前述した。
プローブピンの耐久性強化のためのスペーストランスフォーマー及びその製造方法
図10、図11及び図12を参照して、本発明の一実施例に係るスペーストランスフォーマー及びその製造方法を説明する。
図10は、本発明の一実施例に係るスペーストランスフォーマーの製造方法を示した図である。
本発明の一実施例に係るスペーストランスフォーマーの製造方法は、以下の段階を含む。
前記(1)〜(7)段階についての説明は、図3による実施例の該当段階についての説明で代替する。
図11は、図10の実施例により製造されたスペーストランスフォーマーの正面図である。
前記スペーストランスフォーマーの製造方法についての詳細な説明は、図10で前述した。
図12は、図10の実施例により製造されたスペーストランスフォーマーの上面図である。
図12についての詳細な説明は、図10の説明部分で前述した。
Claims (5)
- 複数のセラミックグリーンシートを焼成して、複数のセラミック薄板を生成する段階と、
前記複数のセラミック薄板それぞれにビアホールを形成する段階と、
前記複数のセラミック薄板それぞれのビアホールに導電性ペーストを充填し、熱処理してビア電極を形成する段階と、
前記複数のセラミック薄板それぞれの端面に導電性ペーストでパターンを印刷し、熱処理して内部電極を形成する段階と、
前記複数のセラミック薄板のうち最上位セラミック薄板を除いた残りのセラミック薄板それぞれの端面にビアホールを避けてボンディング剤を塗布する段階と、
前記ビア電極と前記内部電極を介して前記複数のセラミック薄板それぞれが電気的に接続されるように前記複数のセラミック薄板それぞれを整列して積層する段階、及び
前記積層された複数のセラミック薄板を焼成または熱処理する段階を含む多層セラミック基板の製造方法。 - 前記導電性ペーストはガラス成分を含み、
前記積層された複数のセラミック薄板を前記ボンディング剤の融点より高く、前記セラミック薄板の融点及び前記導電性ペーストの融点より低い温度で熱処理する請求項1に記載の多層セラミック基板の製造方法。 - 前記ビア電極または前記内部電極の導電性を検査して、導電性に問題がある場合、前記ビアホールの導電性ペーストまたは前記パターンの導電性ペーストをエッチング溶液を用いてエッチングして前記ビアホールを再充填するか、前記パターンを再印刷する請求項1に記載の多層セラミック基板の製造方法。
- 前記複数のセラミック薄板それぞれの厚さは10〜500ミクロンであり、前記ボンディング剤が形成するボンディング層の厚さは2〜100ミクロンであり、前記複数のセラミック薄板それぞれの直径は12インチ以上である請求項1に記載の多層セラミック基板の製造方法。
- 複数のセラミック薄板が積層されて形成される多層セラミック基板であって、
前記複数のセラミック薄板は、複数のセラミックグリーンシートを焼成して生成され、
前記複数のセラミック薄板それぞれは、ビア電極及び内部電極を含み、前記ビア電極は、前記複数のセラミック薄板それぞれに形成されたビアホールに導電性ペーストを充填して熱処理することによって形成され、前記内部電極は、前記複数のセラミック薄板それぞれの端面に導電性ペーストでパターンを印刷して、熱処理することによって形成され、
前記多層セラミック基板は、前記複数のセラミック薄板のうち最上位セラミック薄板を除いた残りのセラミック薄板それぞれの端面にビアホールを避けてボンディング剤を塗布し、前記ビア電極と前記内部電極を介して前記複数のセラミック薄板それぞれが電気的に接続されるように前記複数のセラミック薄板を整列して積層し、前記積層された複数のセラミック薄板を焼成または熱処理することによって生成される多層セラミック基板。
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WO2019004609A1 (ko) | 2019-01-03 |
JP7008369B2 (ja) | 2022-01-25 |
KR102019794B1 (ko) | 2019-09-09 |
EP3647299A4 (en) | 2021-03-24 |
EP3647299A1 (en) | 2020-05-06 |
US20200084894A1 (en) | 2020-03-12 |
KR20190002292A (ko) | 2019-01-08 |
CN110678434B (zh) | 2022-06-14 |
KR102005274B1 (ko) | 2019-07-31 |
KR20190002291A (ko) | 2019-01-08 |
CN110678434A (zh) | 2020-01-10 |
KR102019790B1 (ko) | 2019-09-09 |
US11419218B2 (en) | 2022-08-16 |
KR20190002290A (ko) | 2019-01-08 |
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