JP2020501373A5 - - Google Patents
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- JP2020501373A5 JP2020501373A5 JP2019530792A JP2019530792A JP2020501373A5 JP 2020501373 A5 JP2020501373 A5 JP 2020501373A5 JP 2019530792 A JP2019530792 A JP 2019530792A JP 2019530792 A JP2019530792 A JP 2019530792A JP 2020501373 A5 JP2020501373 A5 JP 2020501373A5
- Authority
- JP
- Japan
- Prior art keywords
- reactant
- halide
- substrate
- gas phase
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000376 reactant Substances 0.000 claims 78
- 238000000034 method Methods 0.000 claims 64
- 150000004820 halides Chemical class 0.000 claims 59
- 239000012071 phase Substances 0.000 claims 53
- 239000007789 gas Substances 0.000 claims 44
- 239000000758 substrate Substances 0.000 claims 43
- 238000005530 etching Methods 0.000 claims 30
- 238000006243 chemical reaction Methods 0.000 claims 11
- 239000010408 film Substances 0.000 claims 11
- 239000003446 ligand Substances 0.000 claims 8
- 239000012528 membrane Substances 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 239000007795 chemical reaction product Substances 0.000 claims 6
- -1 halogen Halide Chemical class 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- 239000012808 vapor phase Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052698 phosphorus Inorganic materials 0.000 claims 4
- 239000011574 phosphorus Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 229910052717 sulfur Inorganic materials 0.000 claims 4
- 229910052718 tin Inorganic materials 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 238000010574 gas phase reaction Methods 0.000 claims 3
- 150000005309 metal halides Chemical class 0.000 claims 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000011593 sulfur Substances 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910017090 AlO 2 Inorganic materials 0.000 claims 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910004166 TaN Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims 2
- 150000001266 acyl halides Chemical class 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 235000019253 formic acid Nutrition 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 229910001507 metal halide Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910052702 rhenium Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- KNAVTGAJQKHZAS-UHFFFAOYSA-N 2-chloroethoxy(pentafluoro)-$l^{6}-sulfane Chemical compound FS(F)(F)(F)(F)OCCCl KNAVTGAJQKHZAS-UHFFFAOYSA-N 0.000 claims 1
- 229910017083 AlN Inorganic materials 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229910018503 SF6 Inorganic materials 0.000 claims 1
- 229910004541 SiN Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 150000001350 alkyl halides Chemical class 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- WRJWRGBVPUUDLA-UHFFFAOYSA-N chlorosulfonyl isocyanate Chemical compound ClS(=O)(=O)N=C=O WRJWRGBVPUUDLA-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical group OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052752 metalloid Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- JFCHSQDLLFJHOA-UHFFFAOYSA-N n,n-dimethylsulfamoyl chloride Chemical compound CN(C)S(Cl)(=O)=O JFCHSQDLLFJHOA-UHFFFAOYSA-N 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 239000013110 organic ligand Substances 0.000 claims 1
- 150000003461 sulfonyl halides Chemical class 0.000 claims 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 1
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 claims 1
- GVZFDPPAJXHNGL-UHFFFAOYSA-N trifluoromethyl trifluoromethanesulfonate Chemical compound FC(F)(F)OS(=O)(=O)C(F)(F)F GVZFDPPAJXHNGL-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021214437A JP7161024B2 (ja) | 2016-12-09 | 2021-12-28 | 熱原子層エッチングプロセス |
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662432318P | 2016-12-09 | 2016-12-09 | |
| US62/432,318 | 2016-12-09 | ||
| US201762449945P | 2017-01-24 | 2017-01-24 | |
| US62/449,945 | 2017-01-24 | ||
| US201762455989P | 2017-02-07 | 2017-02-07 | |
| US62/455,989 | 2017-02-07 | ||
| US201762485330P | 2017-04-13 | 2017-04-13 | |
| US62/485,330 | 2017-04-13 | ||
| PCT/US2017/065170 WO2018106955A1 (en) | 2016-12-09 | 2017-12-07 | Thermal atomic layer etching processes |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021214437A Division JP7161024B2 (ja) | 2016-12-09 | 2021-12-28 | 熱原子層エッチングプロセス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020501373A JP2020501373A (ja) | 2020-01-16 |
| JP2020501373A5 true JP2020501373A5 (enExample) | 2021-01-21 |
| JP7062658B2 JP7062658B2 (ja) | 2022-05-06 |
Family
ID=62488576
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019530792A Active JP7062658B2 (ja) | 2016-12-09 | 2017-12-07 | 熱原子層エッチングプロセス |
| JP2021214437A Active JP7161024B2 (ja) | 2016-12-09 | 2021-12-28 | 熱原子層エッチングプロセス |
| JP2022163420A Active JP7470763B2 (ja) | 2016-12-09 | 2022-10-11 | 熱原子層エッチングプロセス |
| JP2023134806A Pending JP2023159315A (ja) | 2016-12-09 | 2023-08-22 | 熱原子層エッチングプロセス |
| JP2025061057A Pending JP2025106363A (ja) | 2016-12-09 | 2025-04-02 | 熱原子層エッチングプロセス |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021214437A Active JP7161024B2 (ja) | 2016-12-09 | 2021-12-28 | 熱原子層エッチングプロセス |
| JP2022163420A Active JP7470763B2 (ja) | 2016-12-09 | 2022-10-11 | 熱原子層エッチングプロセス |
| JP2023134806A Pending JP2023159315A (ja) | 2016-12-09 | 2023-08-22 | 熱原子層エッチングプロセス |
| JP2025061057A Pending JP2025106363A (ja) | 2016-12-09 | 2025-04-02 | 熱原子層エッチングプロセス |
Country Status (6)
| Country | Link |
|---|---|
| US (11) | US10273584B2 (enExample) |
| JP (5) | JP7062658B2 (enExample) |
| KR (7) | KR102410571B1 (enExample) |
| CN (2) | CN110050331B (enExample) |
| TW (7) | TWI751059B (enExample) |
| WO (1) | WO2018106955A1 (enExample) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10115601B2 (en) * | 2016-02-03 | 2018-10-30 | Tokyo Electron Limited | Selective film formation for raised and recessed features using deposition and etching processes |
| CN110050331B (zh) | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| JP6980406B2 (ja) * | 2017-04-25 | 2021-12-15 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
| WO2018204810A1 (en) | 2017-05-05 | 2018-11-08 | Quantum-Si Incorporated | Substrates having modified surface reactivity and antifouling properties in biological reactions |
| JP6936700B2 (ja) | 2017-10-31 | 2021-09-22 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
| KR102016927B1 (ko) * | 2017-11-01 | 2019-10-21 | 한국기초과학지원연구원 | 원자층 연마 방법 및 이를 위한 연마 장치 |
| KR102476262B1 (ko) * | 2017-12-14 | 2022-12-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 에칭 잔류물이 더 적게 금속 산화물들을 에칭하는 방법들 |
| US11205700B2 (en) * | 2018-07-16 | 2021-12-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Air gap spacer and related methods |
| KR102352038B1 (ko) * | 2018-09-13 | 2022-01-17 | 샌트랄 글래스 컴퍼니 리미티드 | 실리콘 산화물의 에칭 방법 및 에칭 장치 |
| US11387112B2 (en) * | 2018-10-04 | 2022-07-12 | Tokyo Electron Limited | Surface processing method and processing system |
| US20220084838A1 (en) * | 2019-01-15 | 2022-03-17 | Lam Research Corporation | Metal atomic layer etch and deposition apparatuses and processes with metal-free ligands |
| US11515167B2 (en) * | 2019-02-01 | 2022-11-29 | Hitachi High-Tech Corporation | Plasma etching method and plasma processing apparatus |
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| JP2020136602A (ja) * | 2019-02-25 | 2020-08-31 | 株式会社Adeka | エッチング方法 |
| JP7193731B2 (ja) * | 2019-03-29 | 2022-12-21 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7396355B2 (ja) * | 2019-05-15 | 2023-12-12 | 株式会社レゾナック | 金属除去方法、ドライエッチング方法、及び半導体素子の製造方法 |
| WO2020252097A1 (en) * | 2019-06-11 | 2020-12-17 | Applied Materials, Inc. | Etching of metal oxides using fluorine and metal halides |
| JP7548740B2 (ja) * | 2019-07-18 | 2024-09-10 | エーエスエム・アイピー・ホールディング・ベー・フェー | 中間チャンバーを備える半導体気相エッチング装置 |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| AU2020364058A1 (en) * | 2019-10-11 | 2022-05-26 | Quantum-Si Incorporated | Surface modification in the vapor phase |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| WO2021117534A1 (ja) * | 2019-12-12 | 2021-06-17 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| US12341005B2 (en) | 2020-01-17 | 2025-06-24 | Asm Ip Holding B.V. | Formation of SiCN thin films |
| US12142479B2 (en) * | 2020-01-17 | 2024-11-12 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| JP7096279B2 (ja) * | 2020-03-25 | 2022-07-05 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法 |
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| US11972955B2 (en) * | 2020-05-29 | 2024-04-30 | Resonac Corporation | Dry etching method, method for manufacturing semiconductor element, and cleaning method |
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| US11545397B2 (en) | 2020-07-15 | 2023-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spacer structure for semiconductor device and method for forming the same |
| JP7174016B2 (ja) * | 2020-07-16 | 2022-11-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| JP7683343B2 (ja) * | 2020-08-28 | 2025-05-27 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| WO2022050099A1 (ja) * | 2020-09-01 | 2022-03-10 | 株式会社Adeka | エッチング方法 |
| US11062921B1 (en) * | 2020-09-11 | 2021-07-13 | Applied Materials, Inc. | Systems and methods for aluminum-containing film removal |
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| WO2022072160A2 (en) * | 2020-09-18 | 2022-04-07 | Lam Research Corporation | Passivation chemistry for plasma etching |
| JP7613805B2 (ja) * | 2020-10-12 | 2025-01-15 | 東京エレクトロン株式会社 | 埋め込み方法及び成膜装置 |
| US11488835B2 (en) * | 2020-11-20 | 2022-11-01 | Applied Materials, Inc. | Systems and methods for tungsten-containing film removal |
| WO2022123725A1 (ja) * | 2020-12-10 | 2022-06-16 | 株式会社日立ハイテク | 半導体製造方法及び半導体製造装置 |
| US11728177B2 (en) * | 2021-02-11 | 2023-08-15 | Applied Materials, Inc. | Systems and methods for nitride-containing film removal |
| JP7617769B2 (ja) * | 2021-02-25 | 2025-01-20 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| EP4053879A1 (en) * | 2021-03-01 | 2022-09-07 | Imec VZW | Deposition of highly crystalline 2d materials |
| US11462414B2 (en) * | 2021-03-08 | 2022-10-04 | Tokyo Electron Limited | Atomic layer etching of metal oxides |
| CN112986482B (zh) * | 2021-03-11 | 2023-07-07 | 中国电子科技集团公司第四十六研究所 | 用于氮化铝单晶抛光片（0001）面的极性面区分方法 |
| WO2022259399A1 (ja) * | 2021-06-09 | 2022-12-15 | 株式会社日立ハイテク | 半導体製造方法及び半導体製造装置 |
| KR20230017738A (ko) | 2021-07-28 | 2023-02-06 | 에이에스엠 아이피 홀딩 비.브이. | 인시츄 생성 공정 및 시스템 |
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| CN118119734A (zh) * | 2021-10-19 | 2024-05-31 | 默克专利股份有限公司 | 选择性的热原子层蚀刻 |
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| TW202336223A (zh) * | 2021-11-24 | 2023-09-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於自表面選擇性地移除氧化物之方法 |
| KR20240115323A (ko) * | 2021-12-08 | 2024-07-25 | 램 리써치 코포레이션 | 열적 원자 층 에칭을 통한 고 종횡비 홀들에서 에칭 프로파일들의 제어 |
| KR102737905B1 (ko) * | 2021-12-13 | 2024-12-04 | 한양대학교 에리카산학협력단 | 촉매 반응 기반 원자층 식각 방법 |
| KR102737901B1 (ko) * | 2021-12-13 | 2024-12-04 | 한양대학교 에리카산학협력단 | 고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치 |
| US12295163B2 (en) | 2021-12-16 | 2025-05-06 | Asm Ip Holding B.V. | Formation of gate stacks comprising a threshold voltage tuning layer |
| KR20240154003A (ko) * | 2022-02-03 | 2024-10-24 | 메르크 파텐트 게엠베하 | 할로겐화제로서 공반응물을 이용하는 금속의 원자층 에칭 |
| US20250022719A1 (en) * | 2022-04-28 | 2025-01-16 | Hitachi High-Tech Corporation | Etching method |
| WO2024123579A1 (en) * | 2022-12-07 | 2024-06-13 | Lam Research Corporation | Semiconductor processing chamber with metal or metalloid fluoride process exposed coating |
| TWI895928B (zh) * | 2023-03-22 | 2025-09-01 | 日商國際電氣股份有限公司 | 蝕刻方法、半導體裝置之製造方法、程式及處理裝置 |
| WO2025021779A1 (en) | 2023-07-25 | 2025-01-30 | Merck Patent Gmbh | Vapor-phase thermal etch of metal oxides |
| US12494375B2 (en) * | 2023-08-30 | 2025-12-09 | Tokyo Electron Limited | Method to selectively etch silicon nitride to silicon oxide using surface alkylation |
| CN117384642A (zh) * | 2023-09-13 | 2024-01-12 | 湖北兴福电子材料股份有限公司 | 一种选择性蚀刻液 |
| WO2025074942A1 (ja) * | 2023-10-02 | 2025-04-10 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法、エッチング装置、表面処理ガス組成物、及び表面処理材料含有エッチングガス組成物 |
| US20250132165A1 (en) * | 2023-10-20 | 2025-04-24 | Applied Materials, Inc. | Chlorine-free removal of molybdenum oxides from substrates |
Family Cites Families (77)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4255230A (en) * | 1980-02-22 | 1981-03-10 | Eaton Corporation | Plasma etching process |
| JPH0387026A (ja) * | 1988-12-13 | 1991-04-11 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH05206088A (ja) * | 1992-01-29 | 1993-08-13 | Fujikura Ltd | 半導体の加工方法 |
| JP2682479B2 (ja) * | 1994-12-26 | 1997-11-26 | 日本電気株式会社 | ドライエッチング方法 |
| KR970009860A (ko) | 1995-08-07 | 1997-03-27 | 장수영 | 압축에 의한 습기 제거 방법 |
| US5626775A (en) * | 1996-05-13 | 1997-05-06 | Air Products And Chemicals, Inc. | Plasma etch with trifluoroacetic acid and derivatives |
| US5998297A (en) * | 1996-10-23 | 1999-12-07 | Texas Instruments Incorporated | Method of etching copper or copper-doped aluminum |
| JP3750231B2 (ja) * | 1996-11-20 | 2006-03-01 | ソニー株式会社 | 積層配線の形成方法 |
| KR100750420B1 (ko) | 1999-08-17 | 2007-08-21 | 동경 엘렉트론 주식회사 | 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터 |
| US20040014327A1 (en) | 2002-07-18 | 2004-01-22 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
| JP2004063633A (ja) | 2002-07-26 | 2004-02-26 | Fujitsu Ltd | 半導体レーザの製造方法 |
| US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
| US7537662B2 (en) | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
| US20050103265A1 (en) | 2003-11-19 | 2005-05-19 | Applied Materials, Inc., A Delaware Corporation | Gas distribution showerhead featuring exhaust apertures |
| JP4836112B2 (ja) * | 2004-12-24 | 2011-12-14 | 国立大学法人京都大学 | 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法 |
| KR20060098522A (ko) | 2005-03-03 | 2006-09-19 | 삼성전자주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP4506677B2 (ja) | 2005-03-11 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
| US7211477B2 (en) | 2005-05-06 | 2007-05-01 | Freescale Semiconductor, Inc. | High voltage field effect device and method |
| KR100707983B1 (ko) | 2005-11-28 | 2007-04-16 | 주식회사 에이이티 | 산화막의 원자층 에칭방법 |
| US8202367B2 (en) | 2006-03-30 | 2012-06-19 | Mitsui Engineering & Shipbuilding Co., Ltd. | Atomic layer growing apparatus |
| US7435484B2 (en) | 2006-09-01 | 2008-10-14 | Asm Japan K.K. | Ruthenium thin film-formed structure |
| US20090088547A1 (en) | 2006-10-17 | 2009-04-02 | Rpo Pty Limited | Process for producing polysiloxanes and use of the same |
| US7911001B2 (en) | 2007-07-15 | 2011-03-22 | Samsung Electronics Co., Ltd. | Methods for forming self-aligned dual stress liners for CMOS semiconductor devices |
| DE102008037951B4 (de) | 2008-08-14 | 2018-02-15 | Nawotec Gmbh | Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten |
| KR20110098355A (ko) * | 2010-02-26 | 2011-09-01 | 성균관대학교산학협력단 | 중성빔 식각 장치를 이용한 원자층 식각 방법 |
| GB2517099B (en) | 2010-03-08 | 2015-06-03 | Gskolen I Buskerud Og Vestfold H | Speckle reduction |
| US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
| US8869742B2 (en) | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
| US20130312663A1 (en) | 2012-05-22 | 2013-11-28 | Applied Microstructures, Inc. | Vapor Delivery Apparatus |
| JP6297269B2 (ja) | 2012-06-28 | 2018-03-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品 |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| WO2014070838A1 (en) | 2012-10-30 | 2014-05-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Fluorocarbon molecules for high aspect ratio oxide etch |
| WO2014094103A1 (en) | 2012-12-18 | 2014-06-26 | Seastar Chemicals Inc. | Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers |
| US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
| TWI591211B (zh) * | 2013-03-13 | 2017-07-11 | 應用材料股份有限公司 | 蝕刻包含過渡金屬的膜之方法 |
| US9447497B2 (en) | 2013-03-13 | 2016-09-20 | Applied Materials, Inc. | Processing chamber gas delivery system with hot-swappable ampoule |
| KR101465338B1 (ko) | 2013-06-07 | 2014-11-25 | 성균관대학교산학협력단 | 산화 알루미늄에 대한 저손상 원자층 식각 방법 |
| JP2015032597A (ja) | 2013-07-31 | 2015-02-16 | 日本ゼオン株式会社 | プラズマエッチング方法 |
| TWI642809B (zh) * | 2013-09-09 | 2018-12-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用蝕刻氣體蝕刻半導體結構的方法 |
| TW201525173A (zh) * | 2013-12-09 | 2015-07-01 | Applied Materials Inc | 選擇性層沉積之方法 |
| WO2015160412A2 (en) | 2014-01-24 | 2015-10-22 | The Regents Of The University Of Colorado | Novel methods of preparing nanodevices |
| WO2015142954A1 (en) | 2014-03-18 | 2015-09-24 | The Regents Of The University Of California | Metal-organic frameworks characterized by having a large number of adsorption sites per unit volume |
| US9257638B2 (en) | 2014-03-27 | 2016-02-09 | Lam Research Corporation | Method to etch non-volatile metal materials |
| US9637823B2 (en) | 2014-03-31 | 2017-05-02 | Asm Ip Holding B.V. | Plasma atomic layer deposition |
| US20170190983A1 (en) | 2014-04-01 | 2017-07-06 | Montana State University | Process of converting natural plant oils to biofuels |
| US9773683B2 (en) | 2014-06-09 | 2017-09-26 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
| US9540736B2 (en) | 2014-07-29 | 2017-01-10 | Applied Materials, Inc. | Methods of etching films with reduced surface roughness |
| CN105448635B (zh) * | 2014-08-28 | 2018-01-09 | 北京北方华创微电子装备有限公司 | 原子层刻蚀装置及采用其的原子层刻蚀方法 |
| US9624578B2 (en) | 2014-09-30 | 2017-04-18 | Lam Research Corporation | Method for RF compensation in plasma assisted atomic layer deposition |
| JP2018500767A (ja) | 2014-12-18 | 2018-01-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ コロラド，ア ボディー コーポレイトＴＨＥ ＲＥＧＥＮＴＳ ＯＦ ＴＨＥ ＵＮＩＶＥＲＳＩＴＹ ＯＦ ＣＯＬＯＲＡＤＯ，ａ ｂｏｄｙ ｃｏｒｐｏｒａｔｅ | 逐次的な自己制御熱反応を使用する原子層エッチング（ａｌｅ）の新規の方法 |
| US9425041B2 (en) | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
| US9396956B1 (en) | 2015-01-16 | 2016-07-19 | Asm Ip Holding B.V. | Method of plasma-enhanced atomic layer etching |
| JP2016134569A (ja) | 2015-01-21 | 2016-07-25 | 株式会社東芝 | 半導体製造装置 |
| KR102510737B1 (ko) | 2015-03-30 | 2023-03-15 | 도쿄엘렉트론가부시키가이샤 | 원자층 에칭 방법 |
| US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| US9806252B2 (en) * | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| SG10201604524PA (en) | 2015-06-05 | 2017-01-27 | Lam Res Corp | ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS |
| WO2016172740A2 (en) * | 2015-11-10 | 2016-10-27 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Etching reactants and plasma-free oxide etching processes using the same |
| WO2017099718A1 (en) | 2015-12-08 | 2017-06-15 | Intel Corporation | Atomic layer etching of transition metals by halogen surface oxidation |
| US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
| US10982336B2 (en) | 2016-04-01 | 2021-04-20 | Wayne State University | Method for etching a metal surface |
| WO2017200732A1 (en) | 2016-05-20 | 2017-11-23 | Brown University | Method for manufacturing perovskite solar cells and multijunction photovoltaics |
| WO2017213842A2 (en) | 2016-05-23 | 2017-12-14 | The Regents Of The University Of Colorado, A Body Corporate | Enhancement of thermal atomic layer etching |
| US11565936B2 (en) | 2016-05-25 | 2023-01-31 | The Regents Of The University Of Colorado | Atomic layer etching on microdevices and nanodevices |
| US20170345665A1 (en) | 2016-05-26 | 2017-11-30 | Tokyo Electron Limited | Atomic layer etching systems and methods |
| CN109463005B (zh) | 2016-06-03 | 2023-12-15 | 恩特格里斯公司 | 二氧化铪和二氧化锆的气相蚀刻 |
| US20180080124A1 (en) | 2016-09-19 | 2018-03-22 | Applied Materials, Inc. | Methods and systems for thermal ale and ald |
| US11149349B2 (en) | 2016-10-25 | 2021-10-19 | Basf Se | Process for the generation of thin silicon-containing films |
| CN110050331B (zh) | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| US9997371B1 (en) * | 2017-04-24 | 2018-06-12 | Lam Research Corporation | Atomic layer etch methods and hardware for patterning applications |
| WO2019034994A1 (en) | 2017-08-16 | 2019-02-21 | 3M Innovative Properties Company | POLYMER IONOMER SEPARATION MEMBRANES AND METHODS OF USE |
| TW202501680A (zh) | 2018-10-05 | 2025-01-01 | 美商蘭姆研究公司 | 從處理腔室表面之金屬汙染移除 |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| JP7548740B2 (ja) | 2019-07-18 | 2024-09-10 | エーエスエム・アイピー・ホールディング・ベー・フェー | 中間チャンバーを備える半導体気相エッチング装置 |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
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