JP2020025115A5 - - Google Patents
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- Publication number
- JP2020025115A5 JP2020025115A5 JP2019192752A JP2019192752A JP2020025115A5 JP 2020025115 A5 JP2020025115 A5 JP 2020025115A5 JP 2019192752 A JP2019192752 A JP 2019192752A JP 2019192752 A JP2019192752 A JP 2019192752A JP 2020025115 A5 JP2020025115 A5 JP 2020025115A5
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- semiconductor device
- metal layer
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 25
- 239000002184 metal Substances 0.000 claims 14
- 229910052751 metal Inorganic materials 0.000 claims 14
- 239000007769 metal material Substances 0.000 claims 9
- 230000005669 field effect Effects 0.000 claims 6
- 239000002131 composite material Substances 0.000 claims 3
- 230000002093 peripheral effect Effects 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000002457 bidirectional effect Effects 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862687051P | 2018-06-19 | 2018-06-19 | |
| US62/687051 | 2018-06-19 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019533664A Division JP6614470B1 (ja) | 2018-06-19 | 2019-01-17 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020025115A JP2020025115A (ja) | 2020-02-13 |
| JP2020025115A5 true JP2020025115A5 (enExample) | 2020-03-26 |
| JP6782828B2 JP6782828B2 (ja) | 2020-11-11 |
Family
ID=68983705
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019533664A Active JP6614470B1 (ja) | 2018-06-19 | 2019-01-17 | 半導体装置 |
| JP2019192752A Active JP6782828B2 (ja) | 2018-06-19 | 2019-10-23 | 半導体装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019533664A Active JP6614470B1 (ja) | 2018-06-19 | 2019-01-17 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10903359B2 (enExample) |
| JP (2) | JP6614470B1 (enExample) |
| KR (2) | KR102571505B1 (enExample) |
| CN (2) | CN112368845B (enExample) |
| TW (2) | TWI789481B (enExample) |
| WO (1) | WO2019244383A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598161B (zh) * | 2018-04-29 | 2021-03-09 | 杭州电子科技大学 | 一种利用全固态电池实现的增强型iii-v hemt器件 |
| KR102571505B1 (ko) * | 2018-06-19 | 2023-08-28 | 누보톤 테크놀로지 재팬 가부시키가이샤 | 반도체 장치 |
| CN111684608B (zh) | 2018-12-19 | 2021-05-04 | 新唐科技日本株式会社 | 半导体装置 |
| US12369381B2 (en) * | 2019-09-30 | 2025-07-22 | Rohm Co., Ltd. | Semiconductor device |
| JP7470070B2 (ja) * | 2021-02-18 | 2024-04-17 | 株式会社東芝 | 半導体装置 |
| JP7509711B2 (ja) * | 2021-03-23 | 2024-07-02 | 株式会社東芝 | 半導体装置 |
| KR102550988B1 (ko) * | 2021-03-29 | 2023-07-04 | 누보톤 테크놀로지 재팬 가부시키가이샤 | 반도체 장치, 전지 보호 회로, 및, 파워 매니지먼트 회로 |
| JP7551554B2 (ja) * | 2021-03-30 | 2024-09-17 | 株式会社東芝 | 半導体装置 |
| TW202301451A (zh) | 2021-06-25 | 2023-01-01 | 日商佳能股份有限公司 | 半導體裝置和製造半導體裝置的方法 |
| US12155245B2 (en) | 2022-01-18 | 2024-11-26 | Innoscience (suzhou) Semiconductor Co., Ltd. | Nitride-based bidirectional switching device for battery management and method for manufacturing the same |
| EP4244893A4 (en) * | 2022-01-18 | 2023-11-29 | Innoscience (Suzhou) Semiconductor Co., Ltd. | Nitride-based bidirectional switching device for battery management and method for manufacturing the same |
| US12322709B2 (en) * | 2022-01-19 | 2025-06-03 | Nuvoton Technology Corporation Japan | Semiconductor device and laser marking method |
| CN117441235B (zh) * | 2022-08-24 | 2024-05-10 | 新唐科技日本株式会社 | 半导体装置 |
| WO2024042809A1 (ja) * | 2022-08-24 | 2024-02-29 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置 |
| CN119096357B (zh) | 2023-01-23 | 2025-10-17 | 新唐科技日本株式会社 | 半导体装置 |
| US20250218940A1 (en) * | 2023-12-27 | 2025-07-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method of fabricating a semiconductor structure |
| JP7651085B1 (ja) * | 2024-03-21 | 2025-03-25 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100374204B1 (ko) * | 2000-05-03 | 2003-03-04 | 한국과학기술원 | 2차원 노즐배치를 갖는 잉크젯 프린트헤드 및 그 제조방법 |
| JP2006147700A (ja) * | 2004-11-17 | 2006-06-08 | Sanyo Electric Co Ltd | 半導体装置 |
| JP2007088030A (ja) * | 2005-09-20 | 2007-04-05 | Fuji Electric Holdings Co Ltd | 半導体装置 |
| JP5073992B2 (ja) * | 2006-08-28 | 2012-11-14 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
| KR100942555B1 (ko) * | 2008-02-29 | 2010-02-12 | 삼성모바일디스플레이주식회사 | 플렉서블 기판, 이의 제조 방법 및 이를 이용한 박막트랜지스터 |
| JP2008199037A (ja) * | 2008-03-10 | 2008-08-28 | Renesas Technology Corp | 電力用半導体装置および電源回路 |
| JP2010092895A (ja) * | 2008-10-03 | 2010-04-22 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP5649322B2 (ja) * | 2010-04-12 | 2015-01-07 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| US8513798B2 (en) * | 2010-09-09 | 2013-08-20 | Infineon Technologies Ag | Power semiconductor chip package |
| JP2012182238A (ja) | 2011-02-28 | 2012-09-20 | Panasonic Corp | 半導体装置 |
| JP2012182239A (ja) * | 2011-02-28 | 2012-09-20 | Panasonic Corp | 半導体装置の製造方法 |
| JP5995435B2 (ja) * | 2011-08-02 | 2016-09-21 | ローム株式会社 | 半導体装置およびその製造方法 |
| JP5481605B2 (ja) * | 2012-03-23 | 2014-04-23 | パナソニック株式会社 | 半導体素子 |
| JP5990401B2 (ja) * | 2012-05-29 | 2016-09-14 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2015231033A (ja) * | 2014-06-06 | 2015-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| US9793243B2 (en) * | 2014-08-13 | 2017-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Buffer layer(s) on a stacked structure having a via |
| JP2016086006A (ja) | 2014-10-23 | 2016-05-19 | パナソニックＩｐマネジメント株式会社 | 半導体装置及びその製造方法 |
| GB2535484B (en) * | 2015-02-17 | 2019-10-09 | Dynex Semiconductor Ltd | Wafer metallization of high power semiconductor devices |
| CN107710400A (zh) | 2015-07-01 | 2018-02-16 | 松下知识产权经营株式会社 | 半导体装置 |
| KR102382635B1 (ko) * | 2016-06-09 | 2022-04-05 | 매그나칩 반도체 유한회사 | 전력 반도체의 웨이퍼 레벨 칩 스케일 패키지 및 제조 방법 |
| WO2018025839A1 (ja) | 2016-08-02 | 2018-02-08 | パナソニックＩｐマネジメント株式会社 | 半導体装置、半導体モジュール、および半導体パッケージ装置 |
| JP2018049974A (ja) * | 2016-09-23 | 2018-03-29 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN114975302A (zh) | 2016-12-27 | 2022-08-30 | 新唐科技日本株式会社 | 半导体装置 |
| KR102571505B1 (ko) * | 2018-06-19 | 2023-08-28 | 누보톤 테크놀로지 재팬 가부시키가이샤 | 반도체 장치 |
-
2019
- 2019-01-17 KR KR1020207036456A patent/KR102571505B1/ko active Active
- 2019-01-17 TW TW108101837A patent/TWI789481B/zh active
- 2019-01-17 CN CN201980040521.0A patent/CN112368845B/zh active Active
- 2019-01-17 KR KR1020217006309A patent/KR102234945B1/ko active Active
- 2019-01-17 US US16/488,199 patent/US10903359B2/en active Active
- 2019-01-17 CN CN202110225613.5A patent/CN113035865B/zh active Active
- 2019-01-17 TW TW109146528A patent/TWI737559B/zh active
- 2019-01-17 JP JP2019533664A patent/JP6614470B1/ja active Active
- 2019-01-17 WO PCT/JP2019/001315 patent/WO2019244383A1/ja not_active Ceased
- 2019-10-23 JP JP2019192752A patent/JP6782828B2/ja active Active
-
2020
- 2020-12-17 US US17/125,635 patent/US11107915B2/en active Active
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