JP2019522348A5 - - Google Patents
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- JP2019522348A5 JP2019522348A5 JP2018555266A JP2018555266A JP2019522348A5 JP 2019522348 A5 JP2019522348 A5 JP 2019522348A5 JP 2018555266 A JP2018555266 A JP 2018555266A JP 2018555266 A JP2018555266 A JP 2018555266A JP 2019522348 A5 JP2019522348 A5 JP 2019522348A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal film
- semiconductor wafer
- single crystal
- crystal semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims 41
- 239000002184 metal Substances 0.000 claims 41
- 238000000034 method Methods 0.000 claims 26
- 239000013078 crystal Substances 0.000 claims 23
- 239000004065 semiconductor Substances 0.000 claims 21
- 229910052582 BN Inorganic materials 0.000 claims 18
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 15
- 239000007789 gas Substances 0.000 claims 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 11
- 229910052796 boron Inorganic materials 0.000 claims 11
- 229910052799 carbon Inorganic materials 0.000 claims 8
- 229910021389 graphene Inorganic materials 0.000 claims 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 125000004432 carbon atom Chemical group C* 0.000 claims 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims 4
- 229920000642 polymer Polymers 0.000 claims 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- -1 H 3 B 3 CI 3 N 3) Chemical compound 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 229910017052 cobalt Inorganic materials 0.000 claims 3
- 239000010941 cobalt Substances 0.000 claims 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 3
- 239000012705 liquid precursor Substances 0.000 claims 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- JBANFLSTOJPTFW-UHFFFAOYSA-N azane;boron Chemical compound [B].N JBANFLSTOJPTFW-UHFFFAOYSA-N 0.000 claims 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims 2
- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 claims 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 claims 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000005240 physical vapour deposition Methods 0.000 claims 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims 2
- 230000001376 precipitating effect Effects 0.000 claims 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims 2
- IJXPQKHXJCOFGH-UHFFFAOYSA-N 2,4,6-trichloro-1,3,5,2,4,6-triazatriborinane Chemical compound ClB1NB(Cl)NB(Cl)N1 IJXPQKHXJCOFGH-UHFFFAOYSA-N 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910015900 BF3 Inorganic materials 0.000 claims 1
- VWHCRPOEYZPVCP-UHFFFAOYSA-N ClB1N(Cl)BNBN1Cl Chemical compound ClB1N(Cl)BNBN1Cl VWHCRPOEYZPVCP-UHFFFAOYSA-N 0.000 claims 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims 1
- 239000005977 Ethylene Substances 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 239000005062 Polybutadiene Substances 0.000 claims 1
- 239000004698 Polyethylene Substances 0.000 claims 1
- 239000004743 Polypropylene Substances 0.000 claims 1
- 239000004793 Polystyrene Substances 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- TVJORGWKNPGCDW-UHFFFAOYSA-N aminoboron Chemical compound N[B] TVJORGWKNPGCDW-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910000085 borane Inorganic materials 0.000 claims 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims 1
- 239000001273 butane Substances 0.000 claims 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000001282 iso-butane Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229920002857 polybutadiene Polymers 0.000 claims 1
- 229920000573 polyethylene Polymers 0.000 claims 1
- 229920001155 polypropylene Polymers 0.000 claims 1
- 229920002223 polystyrene Polymers 0.000 claims 1
- 239000001294 propane Substances 0.000 claims 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662335149P | 2016-05-12 | 2016-05-12 | |
| US62/335,149 | 2016-05-12 | ||
| PCT/US2017/030124 WO2017196559A1 (en) | 2016-05-12 | 2017-04-28 | Direct formation of hexagonal boron nitride on silicon based dielectrics |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020163797A Division JP7066127B2 (ja) | 2016-05-12 | 2020-09-29 | シリコン系誘電体上の六方晶窒化ホウ素の直接形成 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019522348A JP2019522348A (ja) | 2019-08-08 |
| JP2019522348A5 true JP2019522348A5 (enExample) | 2020-05-07 |
| JP6775804B2 JP6775804B2 (ja) | 2020-10-28 |
Family
ID=58692666
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018555266A Active JP6775804B2 (ja) | 2016-05-12 | 2017-04-28 | シリコン系誘電体上の六方晶窒化ホウ素の直接形成 |
| JP2020163797A Active JP7066127B2 (ja) | 2016-05-12 | 2020-09-29 | シリコン系誘電体上の六方晶窒化ホウ素の直接形成 |
| JP2022066022A Active JP7283707B2 (ja) | 2016-05-12 | 2022-04-13 | シリコン系誘電体上の六方晶窒化ホウ素の直接形成 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020163797A Active JP7066127B2 (ja) | 2016-05-12 | 2020-09-29 | シリコン系誘電体上の六方晶窒化ホウ素の直接形成 |
| JP2022066022A Active JP7283707B2 (ja) | 2016-05-12 | 2022-04-13 | シリコン系誘電体上の六方晶窒化ホウ素の直接形成 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10658472B2 (enExample) |
| EP (3) | EP4131338A3 (enExample) |
| JP (3) | JP6775804B2 (enExample) |
| KR (3) | KR102419924B1 (enExample) |
| CN (1) | CN109791876B (enExample) |
| ES (1) | ES2940083T3 (enExample) |
| WO (1) | WO2017196559A1 (enExample) |
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| CN107994078B (zh) * | 2017-12-14 | 2020-08-11 | 北京华碳科技有限责任公司 | 具有源极控制电极的场效应晶体管、制造方法和电子器件 |
| US10490673B2 (en) * | 2018-03-02 | 2019-11-26 | Texas Instruments Incorporated | Integration of graphene and boron nitride hetero-structure device |
| US11332369B2 (en) * | 2018-03-22 | 2022-05-17 | BNNano, Inc. | Compositions and aggregates comprising boron nitride nanotube structures, and methods of making |
| CN109180026A (zh) * | 2018-07-26 | 2019-01-11 | 吉林大学 | 利用化学气相沉积方法制备蓝宝石光纤包层的方法 |
| US11339499B2 (en) * | 2018-10-08 | 2022-05-24 | Korea Institute Of Science And Technology | Method for epitaxial growth of single crystalline heterogeneous 2D materials and stacked structure |
| JP7253943B2 (ja) * | 2019-03-15 | 2023-04-07 | 東京エレクトロン株式会社 | 六方晶窒化ホウ素膜を形成する方法および装置 |
| US11158807B2 (en) * | 2019-10-18 | 2021-10-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Field effect transistor and method of manufacturing the same |
| CN110676384B (zh) * | 2019-11-05 | 2024-11-26 | 南京理工大学 | 一种氮化硼封装的二维有机-无机异质结及其制备方法 |
| CN113023718B (zh) * | 2019-12-24 | 2022-11-01 | 北京大学 | 一种洁净转移制备高质量悬空二维材料支撑膜的方法 |
| CN111243942A (zh) * | 2020-01-19 | 2020-06-05 | 吉林大学 | 利用过渡金属或合金作为缓冲层提高六方氮化硼结晶质量的方法 |
| US11075273B1 (en) | 2020-03-04 | 2021-07-27 | International Business Machines Corporation | Nanosheet electrostatic discharge structure |
| KR102314020B1 (ko) * | 2020-05-06 | 2021-10-15 | 아주대학교산학협력단 | 육방정계 질화붕소/그래핀 2차원 복합 소재 제조방법 |
| CN115004343B (zh) * | 2020-06-28 | 2025-02-28 | 深圳清华大学研究院 | 带有微结构的原子级平整器件及其制备方法 |
| KR20220033997A (ko) * | 2020-09-10 | 2022-03-17 | 에이에스엠 아이피 홀딩 비.브이. | 갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치 |
| US11545565B2 (en) * | 2020-10-21 | 2023-01-03 | IceMos Technology Limited | Semiconductor device and method of forming low voltage power MOSFETs using graphene for metal layers and graphene nanoribbons for channel and drain enhancement regions of power vertical and lateral MOSFETs |
| JP7501312B2 (ja) * | 2020-11-05 | 2024-06-18 | 富士通株式会社 | 光センサ及びその製造方法 |
| CN112582542B (zh) * | 2020-12-06 | 2022-09-30 | 南开大学 | 一种基于二维范德华异质结构的单分子场效应晶体管及其制备方法 |
| US11830729B2 (en) * | 2021-01-08 | 2023-11-28 | Applied Materials, Inc. | Low-k boron carbonitride films |
| CN113136641B (zh) * | 2021-03-15 | 2022-05-31 | 杭州电子科技大学 | 一种氮、硼掺杂非晶碳中空纤维膜的制备方法 |
| KR102504324B1 (ko) * | 2021-06-28 | 2023-02-28 | 경희대학교 산학협력단 | 자외선 방출 광 소자 및 이의 동작 방법 |
| US20240295596A1 (en) * | 2021-09-08 | 2024-09-05 | Otowa Electric Co., Ltd. | A sensor device capable of measuring electric field strength of an external electric field and method for measuring external electric field |
| CN118077030A (zh) * | 2021-09-17 | 2024-05-24 | 应用材料公司 | 六方氮化硼沉积 |
| EP4500576A1 (en) * | 2022-03-31 | 2025-02-05 | Archer Materials Limited | FABRICATION AND PROCESSING OF GRAPHENE ELECTRONIC DEVICES ON SILICON WITH A SiO2 PASSIVATION LAYER |
| CN115064595B (zh) * | 2022-06-30 | 2025-11-07 | 中国科学院半导体研究所 | 一种mos器件及其制备方法 |
| KR20240092593A (ko) * | 2022-12-14 | 2024-06-24 | 에이에스엠 아이피 홀딩 비.브이. | 질화붕소 증착 방법 및 시스템 |
| EP4639634A1 (en) * | 2022-12-23 | 2025-10-29 | Archer Materials Limited | Methods for fabrication of graphene field-effect transistors with a liquid top-gate and associated componentry |
| WO2025085123A2 (en) * | 2023-06-20 | 2025-04-24 | Kansas State University Research Foundation | Crystalline hexagonal boron nitride with nitrogen-15 isotope enrichment |
| CN117512559B (zh) * | 2023-11-13 | 2025-10-31 | 吉林大学 | 一种原位c掺杂的p型六方氮化硼薄膜及其制备方法 |
| CN118374789A (zh) * | 2024-04-19 | 2024-07-23 | 南京大学 | 快速等厚生长高介电性能六方氮化硼薄膜的方法及薄膜 |
| CN118929587B (zh) * | 2024-08-27 | 2025-10-03 | 中国科学院兰州化学物理研究所 | 一种自组装球状氮化硼及其制备方法 |
| US12479730B1 (en) | 2024-12-02 | 2025-11-25 | Lyten, Inc. | Homogenous, partially oxidized carbon and microwave-assisted methods of making the same |
| CN119980151A (zh) * | 2025-01-13 | 2025-05-13 | 南京理工大学 | 一种可控合成金属-有机纳米带的方法 |
| CN119913478A (zh) * | 2025-01-24 | 2025-05-02 | 中山大学 | 高附着力的8英寸六方氮化硼厚膜生长方法 |
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