JP2015501277A5 - - Google Patents
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- JP2015501277A5 JP2015501277A5 JP2014537240A JP2014537240A JP2015501277A5 JP 2015501277 A5 JP2015501277 A5 JP 2015501277A5 JP 2014537240 A JP2014537240 A JP 2014537240A JP 2014537240 A JP2014537240 A JP 2014537240A JP 2015501277 A5 JP2015501277 A5 JP 2015501277A5
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- semiconductor substrate
- nanometers
- layer
- front surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims description 143
- 239000002184 metal Substances 0.000 claims description 143
- 238000000034 method Methods 0.000 claims description 109
- 239000004065 semiconductor Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 91
- 239000010410 layer Substances 0.000 claims description 73
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 59
- 229910052799 carbon Inorganic materials 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 229910021389 graphene Inorganic materials 0.000 claims description 29
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 229920000642 polymer Polymers 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- -1 polyethylene Polymers 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000002094 self assembled monolayer Substances 0.000 claims description 4
- 239000013545 self-assembled monolayer Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 239000005062 Polybutadiene Substances 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001273 butane Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 229920002857 polybutadiene Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000001294 propane Substances 0.000 claims description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims description 2
- HEFNNWSXXWATRW-UHFFFAOYSA-N Ibuprofen Chemical compound CC(C)CC1=CC=C(C(C)C(O)=O)C=C1 HEFNNWSXXWATRW-UHFFFAOYSA-N 0.000 claims 3
- 150000001721 carbon Chemical group 0.000 claims 3
- 238000001816 cooling Methods 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161548899P | 2011-10-19 | 2011-10-19 | |
| US61/548,899 | 2011-10-19 | ||
| PCT/US2012/060810 WO2013059457A1 (en) | 2011-10-19 | 2012-10-18 | Direct formation of graphene on semiconductor substrates |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017251320A Division JP6615853B2 (ja) | 2011-10-19 | 2017-12-27 | 半導体基板上におけるグラフェンの直接形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015501277A JP2015501277A (ja) | 2015-01-15 |
| JP2015501277A5 true JP2015501277A5 (enExample) | 2015-12-03 |
| JP6291413B2 JP6291413B2 (ja) | 2018-03-14 |
Family
ID=47258065
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014537240A Active JP6291413B2 (ja) | 2011-10-19 | 2012-10-18 | 半導体基板上におけるグラフェンの直接形成方法 |
| JP2017251320A Active JP6615853B2 (ja) | 2011-10-19 | 2017-12-27 | 半導体基板上におけるグラフェンの直接形成方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017251320A Active JP6615853B2 (ja) | 2011-10-19 | 2017-12-27 | 半導体基板上におけるグラフェンの直接形成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US8884310B2 (enExample) |
| JP (2) | JP6291413B2 (enExample) |
| KR (1) | KR101899629B1 (enExample) |
| TW (1) | TWI544527B (enExample) |
| WO (1) | WO2013059457A1 (enExample) |
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| US8501531B2 (en) * | 2011-04-07 | 2013-08-06 | The United States Of America, As Represented By The Secretary Of The Navy | Method of forming graphene on a surface |
| US9029228B2 (en) * | 2011-10-19 | 2015-05-12 | SunEdision Semiconductor Limited (UEN201334164H) | Direct and sequential formation of monolayers of boron nitride and graphene on substrates |
| US8884310B2 (en) * | 2011-10-19 | 2014-11-11 | Sunedison Semiconductor Limited (Uen201334164H) | Direct formation of graphene on semiconductor substrates |
| TWI434949B (zh) * | 2012-03-14 | 2014-04-21 | Nat Univ Tsing Hua | 化學氣相沈積生成石墨烯之方法 |
| TWI526559B (zh) * | 2012-04-06 | 2016-03-21 | 中央研究院 | 藉由物理氣相沉積法在基板上成長碳薄膜或無機材料薄膜的方法 |
| TW201341310A (zh) * | 2012-04-12 | 2013-10-16 | Nat Univ Tsing Hua | 利用雷射誘發石墨烯之製備方法 |
| KR101427818B1 (ko) * | 2012-10-29 | 2014-08-08 | 한국과학기술연구원 | 열 증착을 이용한 유기나노필름 기반 탄소재료 및 그 제조방법 |
| KR101425376B1 (ko) | 2013-02-12 | 2014-08-01 | 한국과학기술연구원 | 고분자 기반의 대면적 탄소 나노그물 및 그 제조방법 |
| US20140272308A1 (en) * | 2013-03-15 | 2014-09-18 | Solan, LLC | Graphite-Based Devices Incorporating A Graphene Layer With A Bending Angle |
| US9593019B2 (en) * | 2013-03-15 | 2017-03-14 | Guardian Industries Corp. | Methods for low-temperature graphene precipitation onto glass, and associated articles/devices |
| US10431354B2 (en) | 2013-03-15 | 2019-10-01 | Guardian Glass, LLC | Methods for direct production of graphene on dielectric substrates, and associated articles/devices |
| EP4293707A3 (en) * | 2013-05-09 | 2024-03-27 | GlobalWafers Co., Ltd. | Direct and sequential formation of monolayers of boron nitride and graphene on substrates |
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| CN103482622A (zh) * | 2013-09-18 | 2014-01-01 | 武汉理工大学 | 一种稳定性强且电导率高的单层石墨烯薄膜的制备方法 |
| JP6241318B2 (ja) * | 2014-02-28 | 2017-12-06 | 富士通株式会社 | グラフェン膜の製造方法及び半導体装置の製造方法 |
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| JP6775804B2 (ja) | 2016-05-12 | 2020-10-28 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | シリコン系誘電体上の六方晶窒化ホウ素の直接形成 |
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| US10759157B2 (en) | 2016-06-15 | 2020-09-01 | Nanomedical Diagnostics, Inc. | Systems and methods for transferring graphene |
| US10903319B2 (en) | 2016-06-15 | 2021-01-26 | Nanomedical Diagnostics, Inc. | Patterning graphene with a hard mask coating |
| US11056343B2 (en) * | 2016-06-15 | 2021-07-06 | Cardea Bio, Inc. | Providing a temporary protective layer on a graphene sheet |
| US9761669B1 (en) | 2016-07-18 | 2017-09-12 | Wisconsin Alumni Research Foundation | Seed-mediated growth of patterned graphene nanoribbon arrays |
| TWI586849B (zh) | 2016-08-04 | 2017-06-11 | 國立中興大學 | A method of reducing the graphene layer of the oxidized graphene layer on the surface of the substrate and the hole wall of the aspect ratio hole and the adjusting liquid used in the method |
| JP7096816B2 (ja) | 2016-09-16 | 2022-07-06 | イーストマン ケミカル カンパニー | 物理蒸着によって製造されるバイオセンサー電極 |
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| CN108133885A (zh) * | 2017-11-07 | 2018-06-08 | 宁波大学 | 一种制备石墨烯肖特基结的方法 |
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| US10604844B2 (en) * | 2018-05-14 | 2020-03-31 | Purdue Research Foundation | Graphene production using plasma-enhanced chemical vapor deposition |
| CN110683532B (zh) * | 2018-07-04 | 2021-01-01 | 中国科学院宁波材料技术与工程研究所 | 一种提高cvd石墨烯薄膜耐蚀性的方法 |
| WO2020086841A1 (en) * | 2018-10-26 | 2020-04-30 | The University Of Tulsa | Vacuum-free, hydrogen-free catalytic synthesis of graphene from solid hydrocarbons |
| PL241895B1 (pl) * | 2019-09-23 | 2022-12-19 | Univ Jagiellonski | Sposób otrzymywania powierzchniowego kompozytu węglikowo- grafenowego o kontrolowanej morfologii powierzchni |
| CN110759334B (zh) * | 2019-12-06 | 2023-07-28 | 上海集成电路研发中心有限公司 | 一种石墨烯沟道结构及其制作方法 |
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| CA3208045A1 (en) * | 2021-02-17 | 2022-08-25 | Ashwini K. Sinha | Acetylene fluid supply package, system comprising the same and method of fabricating semiconductor device using the same |
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| CN102064189A (zh) | 2010-12-06 | 2011-05-18 | 苏州纳维科技有限公司 | 金属-半导体电极结构及其制备方法 |
| US20140120270A1 (en) * | 2011-04-25 | 2014-05-01 | James M. Tour | Direct growth of graphene films on non-catalyst surfaces |
| KR20130043063A (ko) * | 2011-10-19 | 2013-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US8884310B2 (en) * | 2011-10-19 | 2014-11-11 | Sunedison Semiconductor Limited (Uen201334164H) | Direct formation of graphene on semiconductor substrates |
| US9029228B2 (en) * | 2011-10-19 | 2015-05-12 | SunEdision Semiconductor Limited (UEN201334164H) | Direct and sequential formation of monolayers of boron nitride and graphene on substrates |
| US9059219B2 (en) * | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9029226B2 (en) * | 2013-03-13 | 2015-05-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices |
-
2012
- 2012-10-16 US US13/652,665 patent/US8884310B2/en active Active
- 2012-10-18 WO PCT/US2012/060810 patent/WO2013059457A1/en not_active Ceased
- 2012-10-18 KR KR1020147013105A patent/KR101899629B1/ko active Active
- 2012-10-18 JP JP2014537240A patent/JP6291413B2/ja active Active
- 2012-10-19 TW TW101138780A patent/TWI544527B/zh active
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2014
- 2014-10-08 US US14/509,209 patent/US9343533B2/en active Active
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2016
- 2016-04-19 US US15/132,666 patent/US20160233305A1/en not_active Abandoned
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2017
- 2017-12-27 JP JP2017251320A patent/JP6615853B2/ja active Active
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