JP6291413B2 - 半導体基板上におけるグラフェンの直接形成方法 - Google Patents

半導体基板上におけるグラフェンの直接形成方法 Download PDF

Info

Publication number
JP6291413B2
JP6291413B2 JP2014537240A JP2014537240A JP6291413B2 JP 6291413 B2 JP6291413 B2 JP 6291413B2 JP 2014537240 A JP2014537240 A JP 2014537240A JP 2014537240 A JP2014537240 A JP 2014537240A JP 6291413 B2 JP6291413 B2 JP 6291413B2
Authority
JP
Japan
Prior art keywords
metal film
semiconductor substrate
layer
carbon
front surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014537240A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015501277A (ja
JP2015501277A5 (enExample
Inventor
マイケル・アール・シークリスト
ビーカス・ベリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
MEMC Electronic Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc, MEMC Electronic Materials Inc filed Critical SunEdison Inc
Publication of JP2015501277A publication Critical patent/JP2015501277A/ja
Publication of JP2015501277A5 publication Critical patent/JP2015501277A5/ja
Application granted granted Critical
Publication of JP6291413B2 publication Critical patent/JP6291413B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2014537240A 2011-10-19 2012-10-18 半導体基板上におけるグラフェンの直接形成方法 Active JP6291413B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161548899P 2011-10-19 2011-10-19
US61/548,899 2011-10-19
PCT/US2012/060810 WO2013059457A1 (en) 2011-10-19 2012-10-18 Direct formation of graphene on semiconductor substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017251320A Division JP6615853B2 (ja) 2011-10-19 2017-12-27 半導体基板上におけるグラフェンの直接形成方法

Publications (3)

Publication Number Publication Date
JP2015501277A JP2015501277A (ja) 2015-01-15
JP2015501277A5 JP2015501277A5 (enExample) 2015-12-03
JP6291413B2 true JP6291413B2 (ja) 2018-03-14

Family

ID=47258065

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014537240A Active JP6291413B2 (ja) 2011-10-19 2012-10-18 半導体基板上におけるグラフェンの直接形成方法
JP2017251320A Active JP6615853B2 (ja) 2011-10-19 2017-12-27 半導体基板上におけるグラフェンの直接形成方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017251320A Active JP6615853B2 (ja) 2011-10-19 2017-12-27 半導体基板上におけるグラフェンの直接形成方法

Country Status (5)

Country Link
US (3) US8884310B2 (enExample)
JP (2) JP6291413B2 (enExample)
KR (1) KR101899629B1 (enExample)
TW (1) TWI544527B (enExample)
WO (1) WO2013059457A1 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8501531B2 (en) * 2011-04-07 2013-08-06 The United States Of America, As Represented By The Secretary Of The Navy Method of forming graphene on a surface
US9029228B2 (en) * 2011-10-19 2015-05-12 SunEdision Semiconductor Limited (UEN201334164H) Direct and sequential formation of monolayers of boron nitride and graphene on substrates
US8884310B2 (en) * 2011-10-19 2014-11-11 Sunedison Semiconductor Limited (Uen201334164H) Direct formation of graphene on semiconductor substrates
TWI434949B (zh) * 2012-03-14 2014-04-21 Nat Univ Tsing Hua 化學氣相沈積生成石墨烯之方法
TWI526559B (zh) * 2012-04-06 2016-03-21 中央研究院 藉由物理氣相沉積法在基板上成長碳薄膜或無機材料薄膜的方法
TW201341310A (zh) * 2012-04-12 2013-10-16 Nat Univ Tsing Hua 利用雷射誘發石墨烯之製備方法
KR101427818B1 (ko) * 2012-10-29 2014-08-08 한국과학기술연구원 열 증착을 이용한 유기나노필름 기반 탄소재료 및 그 제조방법
KR101425376B1 (ko) 2013-02-12 2014-08-01 한국과학기술연구원 고분자 기반의 대면적 탄소 나노그물 및 그 제조방법
US20140272308A1 (en) * 2013-03-15 2014-09-18 Solan, LLC Graphite-Based Devices Incorporating A Graphene Layer With A Bending Angle
US9593019B2 (en) * 2013-03-15 2017-03-14 Guardian Industries Corp. Methods for low-temperature graphene precipitation onto glass, and associated articles/devices
US10431354B2 (en) 2013-03-15 2019-10-01 Guardian Glass, LLC Methods for direct production of graphene on dielectric substrates, and associated articles/devices
EP4293707A3 (en) * 2013-05-09 2024-03-27 GlobalWafers Co., Ltd. Direct and sequential formation of monolayers of boron nitride and graphene on substrates
SG11201600665XA (en) 2013-08-05 2016-02-26 Univ Singapore Method to transfer two dimensional film grown on metal-coated wafer to the wafer itself in a face-to-face manner
CN103482622A (zh) * 2013-09-18 2014-01-01 武汉理工大学 一种稳定性强且电导率高的单层石墨烯薄膜的制备方法
JP6241318B2 (ja) * 2014-02-28 2017-12-06 富士通株式会社 グラフェン膜の製造方法及び半導体装置の製造方法
JP6213328B2 (ja) * 2014-03-20 2017-10-18 Jsr株式会社 膜形成用組成物、レジスト下層膜及びその形成方法並びにパターン形成方法
US9324804B2 (en) 2014-03-21 2016-04-26 Wisconsin Alumni Research Foundation Graphene-on-semiconductor substrates for analog electronics
WO2015184473A1 (en) * 2014-05-30 2015-12-03 Advanced Green Innovations, LLC Hybrid graphene materials and methods of fabrication
US9287359B1 (en) 2014-09-15 2016-03-15 Wisconsin Alumni Research Foundation Oriented bottom-up growth of armchair graphene nanoribbons on germanium
ES2575711B2 (es) * 2014-12-31 2016-11-03 Universidade De Santiago De Compostela Método para la obtención de láminas de grafeno
CN105990091B (zh) * 2015-01-29 2019-01-01 中国科学院微电子研究所 石墨烯的生长方法
US10145005B2 (en) 2015-08-19 2018-12-04 Guardian Glass, LLC Techniques for low temperature direct graphene growth on glass
WO2017052572A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Graphene barrier for electrical interconnects
WO2017058928A1 (en) 2015-10-01 2017-04-06 Sunedison Semiconductor Limited Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt
US9679972B1 (en) * 2016-04-20 2017-06-13 Globalfoundries Inc. Thin strain relaxed buffers with multilayer film stacks
US10157338B2 (en) 2016-05-04 2018-12-18 International Business Machines Corporation Graphene-based micro-scale identification system
JP6775804B2 (ja) 2016-05-12 2020-10-28 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． シリコン系誘電体上の六方晶窒化ホウ素の直接形成
US9923142B2 (en) 2016-05-31 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of graphene growth and related structures
EP3472340B1 (en) 2016-06-15 2023-08-16 Eastman Chemical Company Physical vapor deposited biosensor components
US10759157B2 (en) 2016-06-15 2020-09-01 Nanomedical Diagnostics, Inc. Systems and methods for transferring graphene
US10903319B2 (en) 2016-06-15 2021-01-26 Nanomedical Diagnostics, Inc. Patterning graphene with a hard mask coating
US11056343B2 (en) * 2016-06-15 2021-07-06 Cardea Bio, Inc. Providing a temporary protective layer on a graphene sheet
US9761669B1 (en) 2016-07-18 2017-09-12 Wisconsin Alumni Research Foundation Seed-mediated growth of patterned graphene nanoribbon arrays
TWI586849B (zh) 2016-08-04 2017-06-11 國立中興大學 A method of reducing the graphene layer of the oxidized graphene layer on the surface of the substrate and the hole wall of the aspect ratio hole and the adjusting liquid used in the method
JP7096816B2 (ja) 2016-09-16 2022-07-06 イーストマン ケミカル カンパニー 物理蒸着によって製造されるバイオセンサー電極
WO2018052713A1 (en) 2016-09-16 2018-03-22 Eastman Chemical Company Biosensor electrodes prepared by physical vapor deposition
TWI642804B (zh) * 2016-10-04 2018-12-01 長庚大學 一種具有石墨烯層之半導體結構及其製造方法
CN110167876B (zh) 2017-01-06 2022-08-30 国立研究开发法人科学技术振兴机构 六方晶氮化硼薄膜及其制造方法
CN108396377B (zh) * 2017-02-06 2020-05-15 中国科学院金属研究所 一种高质量单层多晶石墨烯薄膜的制备方法
US20180254318A1 (en) * 2017-03-02 2018-09-06 William B Pohlman, III Graphene based in-plane micro-supercapacitors
US20180308696A1 (en) * 2017-04-25 2018-10-25 Texas Instruments Incorporated Low contact resistance graphene device integration
KR102646492B1 (ko) 2017-06-22 2024-03-12 이스트만 케미칼 컴파니 물리적으로 증착된 전기화학 센서용 전극
CN108133885A (zh) * 2017-11-07 2018-06-08 宁波大学 一种制备石墨烯肖特基结的方法
WO2019183044A1 (en) * 2018-03-19 2019-09-26 Nanotek Instruments, Inc. Graphene-mediated metallization of polymer films
US10604844B2 (en) * 2018-05-14 2020-03-31 Purdue Research Foundation Graphene production using plasma-enhanced chemical vapor deposition
CN110683532B (zh) * 2018-07-04 2021-01-01 中国科学院宁波材料技术与工程研究所 一种提高cvd石墨烯薄膜耐蚀性的方法
WO2020086841A1 (en) * 2018-10-26 2020-04-30 The University Of Tulsa Vacuum-free, hydrogen-free catalytic synthesis of graphene from solid hydrocarbons
PL241895B1 (pl) * 2019-09-23 2022-12-19 Univ Jagiellonski Sposób otrzymywania powierzchniowego kompozytu węglikowo- grafenowego o kontrolowanej morfologii powierzchni
CN110759334B (zh) * 2019-12-06 2023-07-28 上海集成电路研发中心有限公司 一种石墨烯沟道结构及其制作方法
US11854933B2 (en) * 2020-12-30 2023-12-26 Texas Instruments Incorporated Thermally conductive wafer layer
CA3208045A1 (en) * 2021-02-17 2022-08-25 Ashwini K. Sinha Acetylene fluid supply package, system comprising the same and method of fabricating semiconductor device using the same
GB2604377B (en) * 2021-03-04 2024-02-21 Paragraf Ltd A method for manufacturing graphene
US11618681B2 (en) 2021-06-28 2023-04-04 Wisconsin Alumni Research Foundation Graphene nanoribbons grown from aromatic molecular seeds
US20250022967A1 (en) * 2023-07-11 2025-01-16 Stmicroelectronics International N.V. A method for graphene layer growth and simultaneous molybdenum silicide formation on a semiconductor device
KR102732548B1 (ko) * 2023-07-12 2024-11-22 한국지질자원연구원 바이오매스를 줄 히팅 공정을 통해 그래핀을 제조하는 방법 및 이에 의해 제조된 그래핀

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100923304B1 (ko) * 2007-10-29 2009-10-23 삼성전자주식회사 그라펜 시트 및 그의 제조방법
KR101344493B1 (ko) * 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
CN102448879B (zh) 2009-06-16 2014-10-22 富士通株式会社 石墨结构体、电子部件及电子部件的制造方法
KR101622304B1 (ko) * 2009-08-05 2016-05-19 삼성전자주식회사 그라펜 기재 및 그의 제조방법
US8158200B2 (en) 2009-08-18 2012-04-17 University Of North Texas Methods of forming graphene/(multilayer) boron nitride for electronic device applications
US8187955B2 (en) * 2009-08-24 2012-05-29 International Business Machines Corporation Graphene growth on a carbon-containing semiconductor layer
KR101736462B1 (ko) * 2009-09-21 2017-05-16 한화테크윈 주식회사 그래핀의 제조 방법
US8808810B2 (en) * 2009-12-15 2014-08-19 Guardian Industries Corp. Large area deposition of graphene on substrates, and products including the same
US9096437B2 (en) 2010-03-08 2015-08-04 William Marsh Rice University Growth of graphene films from non-gaseous carbon sources
CN102064189A (zh) 2010-12-06 2011-05-18 苏州纳维科技有限公司 金属-半导体电极结构及其制备方法
US20140120270A1 (en) * 2011-04-25 2014-05-01 James M. Tour Direct growth of graphene films on non-catalyst surfaces
KR20130043063A (ko) * 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8884310B2 (en) * 2011-10-19 2014-11-11 Sunedison Semiconductor Limited (Uen201334164H) Direct formation of graphene on semiconductor substrates
US9029228B2 (en) * 2011-10-19 2015-05-12 SunEdision Semiconductor Limited (UEN201334164H) Direct and sequential formation of monolayers of boron nitride and graphene on substrates
US9059219B2 (en) * 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9029226B2 (en) * 2013-03-13 2015-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices

Also Published As

Publication number Publication date
JP2015501277A (ja) 2015-01-15
US8884310B2 (en) 2014-11-11
TW201320165A (zh) 2013-05-16
JP2018070445A (ja) 2018-05-10
US20160233305A1 (en) 2016-08-11
TWI544527B (zh) 2016-08-01
US20150021554A1 (en) 2015-01-22
US9343533B2 (en) 2016-05-17
WO2013059457A1 (en) 2013-04-25
JP6615853B2 (ja) 2019-12-04
US20130099195A1 (en) 2013-04-25
KR20140082811A (ko) 2014-07-02
KR101899629B1 (ko) 2018-09-17

Similar Documents

Publication Publication Date Title
JP6615853B2 (ja) 半導体基板上におけるグラフェンの直接形成方法
JP6567208B2 (ja) 基板上の窒化ホウ素およびグラフェンの直接および連続形成
US9029228B2 (en) Direct and sequential formation of monolayers of boron nitride and graphene on substrates
US9023220B2 (en) Method of manufacturing a graphene monolayer on insulating substrates
Oh et al. Fabrication of a MoS2/Graphene nanoribbon heterojunction network for improved thermoelectric properties
CN102933491B (zh) 石墨烯的生产方法
CN104919077B (zh) 用于石墨烯形成的方法和系统
JP6416189B2 (ja) 誘電体基板上でのグラフェンの直接製造方法、及びそれに関連する物品／装置
CN102936009B (zh) 一种在碳化硅衬底上制作低层数石墨烯薄膜的方法
JP2015501277A5 (enExample)
JP2016518300A (ja) ガラス上への低温グラフェン析出方法、及びそれに関連する物品／装置
KR20160044977A (ko) 비정질 탄소원자층의 형성방법 및 비정질 탄소원자층을 포함하는 전자소자
Wan et al. Interface engineering for CVD graphene: current status and progress
Tian et al. Growth dynamics of millimeter‐sized single‐crystal hexagonal boron nitride monolayers on secondary recrystallized Ni (100) substrates
KR101687619B1 (ko) 산화 그래핀을 이용한 그래핀 제조 방법
CN114171370A (zh) 一种相对封闭区域固相法制备石墨烯的方法
Barin et al. Pre-Patterned CVD Graphene: Insights on ALD deposition parameters and their influence on Al2O3 and graphene layers
Khodos et al. SINGLE-WALLED CARBON NANOTUBES: GROWTH OVER VARIOUS CATALYSTS AND ELECTRONIC PROPERTIES

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151009

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151009

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20160216

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170410

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171227

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180116

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180209

R150 Certificate of patent or registration of utility model

Ref document number: 6291413

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250